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1. 发明申请

US20210039393A1 LIQUID DISCHARGE HEAD, LIQUID DISCHARGE DEVICE, LIQUID DISCHARGE APPARATUS 有权
公开(公告)号：US20210039393A1
公开(公告)日：2021-02-11
申请号：US16938678
申请日：2020-07-24
申请人： Satoshi MIZUKAMI , Masahiro HAYASHI , Toshiaki MASUDA
发明人： Satoshi MIZUKAMI , Masahiro HAYASHI , Toshiaki MASUDA
IPC分类号： B41J2/14
摘要： A piezoelectric element includes an upper electrode, a lower electrode, and a piezoelectric body disposed between the upper electrode and the lower electrode. The piezoelectic body contains lead zirconate titanate. The piezoelectric element also includes a seed layer containing lead disposed between the lower electrode and the piezoelectric body. The seed layer has an amorphous structure at least over an entire surface layer portion on the piezoelectric body side.

2. 发明申请

US20180163323A1 METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL 审中-公开
公开(公告)号：US20180163323A1
公开(公告)日：2018-06-14
申请号：US15891764
申请日：2018-02-08
申请人： Takashi Satoh , Naoya Miyoshi , Junichi Wada , Masahiro Hayashi , Seiji Sarayama , Haruo Sunakawa , Yujirou Ishihara , Akira Usui
发明人： Takashi Satoh , Naoya Miyoshi , Junichi Wada , Masahiro Hayashi , Seiji Sarayama , Haruo Sunakawa , Yujirou Ishihara , Akira Usui
IPC分类号： C30B29/40 , C30B19/04 , C30B19/06 , C30B19/10 , C30B17/00 , C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , C30B9/12 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/06 , C30B19/106 , C30B29/406 , C30B35/007
摘要： A method for producing a group 13 nitride single crystal includes dissolving and crystal growing. The dissolving includes dissolving nitrogen in a mixed melt in a reaction vessel that contains the mixed melt, a seed crystal, and a surrounding member. The mixed melt contains an alkali metal and a group 13 metal. The seed crystal is a seed crystal that is placed in the mixed melt and includes a group 13 nitride crystal in which a principal face is a c-plane. The surrounding member is arranged so as to surround the entire area of a side face of the seed crystal. The crystal growing includes growing a group 13 nitride crystal on the seed crystal.

3. 发明授权

US09863058B2 Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing method 有权
公开(公告)号：US09863058B2
公开(公告)日：2018-01-09
申请号：US14708583
申请日：2015-05-11
申请人： Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
发明人： Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
IPC分类号： C30B29/38 , C30B9/12 , C30B29/40
CPC分类号： C30B9/12 , C30B29/406 , Y10T428/239 , Y10T428/26
摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

4. 发明申请

US20170345694A1 METHOD FOR PRODUCING CRYSTAL SUBSTRATE 审中-公开
公开(公告)号：US20170345694A1
公开(公告)日：2017-11-30
申请号：US15600937
申请日：2017-05-22
申请人： Masahiro HAYASHI , Chiharu KIMURA
发明人： Masahiro HAYASHI , Chiharu KIMURA
IPC分类号： H01L21/673 , H01L21/683 , H01L21/67 , H01L33/16 , C30B29/64 , H01L33/00 , C30B29/38
CPC分类号： H01L21/67309 , C30B29/38 , C30B29/64 , H01L21/67011 , H01L21/67242 , H01L21/67353 , H01L21/6835 , H01L21/6836 , H01L21/68735 , H01L33/0095 , H01L33/16 , H01L2221/68327
摘要： A method for producing a crystal substrate includes preparing, measuring, holding, and machining. The preparing prepares a crystal substrate body including a curved crystal lattice plane. The measuring measures a shape feature of the crystal lattice plane. The holding holds the crystal substrate body in a warped state in accordance with the shape feature measured by the measuring, to more flatten the crystal lattice plane than the crystal lattice plane at the preparing. The machining machines a surface of the crystal substrate body held in the warped state, to flatten the surface.

5. 发明申请

US20170204534A1 GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL, AND GALLIUM NITRIDE CRYSTAL 审中-公开
公开(公告)号：US20170204534A1
公开(公告)日：2017-07-20
申请号：US15455339
申请日：2017-03-10
申请人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Hiroshi NAMBU , Chiharu KIMURA , Naoya MIYOSHI
发明人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Hiroshi NAMBU , Chiharu KIMURA , Naoya MIYOSHI
IPC分类号： C30B29/40 , H01L33/32 , H01L33/16 , C30B9/12
CPC分类号： C30B29/406 , C30B9/12 , H01L33/16 , H01L33/32
摘要： A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.

6. 发明申请

US20170022629A1 METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL 审中-公开
标题翻译：硝酸钾晶体生产方法
公开(公告)号：US20170022629A1
公开(公告)日：2017-01-26
申请号：US15124794
申请日：2014-11-27
申请人： Takashi SATOH , Seiji SARAYAMA , Masahiro HAYASHI , Naoya MIYOSHI , Chiharu KIMURA , Junichi WADA
发明人： Takashi SATOH , Seiji SARAYAMA , Masahiro HAYASHI , Naoya MIYOSHI , Chiharu KIMURA , Junichi WADA
IPC分类号： C30B9/10 , C30B29/40
CPC分类号： C30B9/10 , C30B9/12 , C30B29/406 , C30B35/007
摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.
摘要翻译：制造氮化镓晶体的方法包括通过将氮溶解在包含镓和钠的混合熔体中来生长氮化镓晶体5，并且通过使合金51和合金51反应而收集从包含镓和钠的合金51中分离的镓55 使钠离子并从合金中分离钠离子和镓55的液体52。

7. 发明申请

US20150247257A1 GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD 有权
标题翻译：氮化钠晶体，13号硝酸盐晶体，13号硝酸盐晶体基板和制造方法
公开(公告)号：US20150247257A1
公开(公告)日：2015-09-03
申请号：US14708583
申请日：2015-05-11
申请人： Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
发明人： Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
IPC分类号： C30B9/12 , C30B29/40
CPC分类号： C30B9/12 , C30B29/406 , Y10T428/239 , Y10T428/26
摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.
摘要翻译：具有六方晶系结构的氮化镓晶体包括位于与六方晶体结构的c轴交叉的截面的内侧的第一区域，以及包围第一区域的外周的至少一部分的第二区域横截面。具有电子束或紫外光激发的第一区域和第二区域中的每一个的发射光谱具有包括氮化镓的带边发射和位于比第一峰的更长波长区域的第二峰的第一峰。第一峰的峰值强度小于第一区域中的第二峰值的峰值强度，并且第一峰值的峰值强度大于第二区域中的第二峰值的峰值强度。

8. 发明申请

US20130157397A1 MANUFACTURING METHOD, SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, AND IMAGE FORMING APPARATUS 有权
标题翻译：制造方法，表面发射激光器件，表面发射激光阵列，光学扫描仪和图像形成装置
公开(公告)号：US20130157397A1
公开(公告)日：2013-06-20
申请号：US13766189
申请日：2013-02-13
申请人： Hiroyoshi Shouji , Shunichi Sato , Toshihiro Ishii , Kengo Makita , Masahiro Hayashi , Toshihide Sasaki , Akihiro Itoh
发明人： Hiroyoshi Shouji , Shunichi Sato , Toshihiro Ishii , Kengo Makita , Masahiro Hayashi , Toshihide Sasaki , Akihiro Itoh
IPC分类号： H01S5/183
CPC分类号： H01S5/18361 , H01S5/0202 , H01S5/18311 , H01S5/3202 , H01S5/423 , H01S2301/173 , H01S2301/176
摘要： A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.
摘要翻译：一种制造表面发射激光器件的制造方法包括以下步骤：在基板上层压下反射镜，包括有源层的谐振器结构和具有选择性氧化层的上反射层的层叠体; 蚀刻层叠体以形成在其侧表面露出的选择性氧化层的台面结构; 从台面结构的侧面选择性地氧化选择氧化层，形成电流通过区被氧化物包围的收缩结构; 在远离台面结构的位置处形成分隔槽; 钝化形成分离槽时暴露的层叠体的至少一部分的最外表面; 并用绝缘体涂覆钝化部分。

9. 发明申请

US20120147404A1 Printing Control Apparatus, Printing Apparatus, And Computer Program Product 审中-公开
标题翻译：印刷控制装置，印刷装置和计算机程序产品
公开(公告)号：US20120147404A1
公开(公告)日：2012-06-14
申请号：US13309895
申请日：2011-12-02
申请人： Hajime Kubota , Noboru Tamura , Hideaki Matsui , Yuto Shibata , Daisuke Okada , Takeo Momose , Masahiro Hayashi
发明人： Hajime Kubota , Noboru Tamura , Hideaki Matsui , Yuto Shibata , Daisuke Okada , Takeo Momose , Masahiro Hayashi
IPC分类号： G06F3/12
CPC分类号： G03G15/6508 , G03G15/5087 , G03G15/553 , G06F3/1208 , G06F3/121 , G06F3/1234 , G06F3/1256 , G06F3/1285
摘要： A printing control apparatus includes a print commanding unit that sends a notice of printing data and printing start command to a printing unit on sheets supplied from a normal tray or a bypass tray. The print commanding unit includes a condition determining unit that determines whether a sheet supplying condition set with respect to the printing data and a status of the printing unit satisfy a condition for the bypass tray; a checkup screen display unit that displays a checkup screen relating to the sheet supply from the bypass tray in a case where it is determined that the condition is satisfied; and a notice permitting unit that permits a notice of a printing start command in a case where a notice indicating agreement for printing is received.
摘要翻译：打印控制装置包括打印命令单元，该打印命令单元将打印数据和打印开始命令的通知发送到从普通托盘或旁路托盘提供的纸张上的打印单元。所述打印指令单元包括条件确定单元，其确定相对于所述打印数据设置的纸张供给条件和所述打印单元的状态是否满足所述旁路纸盘的条件; 检查画面显示单元，在确定满足条件的情况下，显示与旁路纸盘的纸张供给相关的检查画面; 以及在接收到指示打印协议的通知的情况下允许通知打印开始命令的通知许可单元。

10. 发明授权

US07906821B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07906821B2
公开(公告)日：2011-03-15
申请号：US12129191
申请日：2008-05-29
申请人： Masahiro Hayashi , Takahisa Akiba , Kunio Watanabe , Tomo Takaso , Susumu Kenmochi
发明人： Masahiro Hayashi , Takahisa Akiba , Kunio Watanabe , Tomo Takaso , Susumu Kenmochi
IPC分类号： H01L29/76 , H01L29/94 , H01L29/788 , H01L27/148 , H01L29/768
CPC分类号： H01L29/7834 , H01L23/5225 , H01L23/585 , H01L29/0638 , H01L29/0653 , H01L29/0692 , H01L29/1083 , H01L29/402 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
摘要翻译：一种半导体器件，包括：半导体层; 栅极绝缘层; 栅电极; 一个通道区; 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层，其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层，其中当从所述顶侧观察时，所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中，所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上，所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域在从顶侧观察的通道宽度方向上。

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