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1. 发明授权

US09368426B2 Piezoelectric fan and air cooling apparatus using the piezoelectric fan 有权
标题翻译：使用压电风扇的压电风扇和空气冷却装置
公开(公告)号：US09368426B2
公开(公告)日：2016-06-14
申请号：US13370341
申请日：2012-02-10
申请人： Masayoshi Tanida , Midori Sunaga , Hiroaki Wada
发明人： Masayoshi Tanida , Midori Sunaga , Hiroaki Wada
IPC分类号： H01L23/467 , F04D33/00 , H05K7/20
CPC分类号： H01L23/467 , F04D33/00 , H01L2924/0002 , H01L2924/3011 , H05K7/20172 , H01L2924/00
摘要： A piezoelectric fan includes a vibration plate one end of which in a length direction is supported in a fixed manner and the other end of which in the length direction is a free end; and piezoelectric elements, attached on at least one of front and back surfaces of the vibration plate. In an intermediate portion of the vibration plate in the length direction, a right-angle bent portion is provided, and a plurality of divided blades are defined by slits in an area of the vibration plate extending from the free end to a position located a predetermined distance from the bent portion toward the free end. The piezoelectric element is attached on the portion of the vibration plate between the fixed end and the bent portion. Hence, variations in resonant frequency among the blades are reduced and the blades are efficiently excited using a common piezoelectric element.
摘要翻译：压电风扇包括振动板，其一端在长度方向上以固定方式支撑，另一端在长度方向上为自由端; 以及安装在振动板的前表面和后表面中的至少一个上的压电元件。在振动板的长度方向的中间部分，设置有直角弯曲部，并且在振动板的从自由端延伸到位于规定的位置的位置的狭缝中形成有多个分割叶片从弯曲部分向自由端的距离。压电元件安装在固定端和弯曲部分之间的振动板的部分上。因此，叶片之间的谐振频率的变化减小，并且使用公共的压电元件有效地激励叶片。

2. 发明授权

US08678787B2 Piezoelectric micro-blower 有权
标题翻译：压电式微型鼓风机
公开(公告)号：US08678787B2
公开(公告)日：2014-03-25
申请号：US12472833
申请日：2009-05-27
申请人： Atsuhiko Hirata , Gaku Kamitani , Hiroaki Wada , Midori Sunaga , Shungo Kanai
发明人： Atsuhiko Hirata , Gaku Kamitani , Hiroaki Wada , Midori Sunaga , Shungo Kanai
IPC分类号： F04B45/04
CPC分类号： F04B45/04 , F04B43/046 , F04B45/047 , F04B53/1077
摘要： A piezoelectric micro-blower capable of efficiently conveying compressive fluid without use of a check valve and ensuring a sufficient flow rate. The micro-blower has a blower body with a first wall and a second wall. Openings are formed in the respective walls and face a center of a diaphragm. An inflow path allowing the openings to communicate with the outside is formed between the walls. By applying a voltage to a piezoelectric element to cause the diaphragm to vibrate, a part of the first wall close to the first opening vibrates. Thus, gas can be drawn from the inflow path and discharged from the opening in the second wall.
摘要翻译：一种能够有效地输送压缩流体而不使用止回阀并确保足够的流量的压电微型鼓风机。微型鼓风机具有带有第一壁和第二壁的鼓风机主体。开口形成在相应的壁中并面向隔膜的中心。在壁之间形成允许开口与外部连通的流入路径。通过向压电元件施加电压以使隔膜振动，靠近第一开口的第一壁的一部分振动。因此，气体可以从流入路径抽出并从第二壁的开口排出。

3. 发明申请

US20090232683A1 PIEZOELECTRIC MICRO-BLOWER 有权
标题翻译：压电微型鼓风机
公开(公告)号：US20090232683A1
公开(公告)日：2009-09-17
申请号：US12472833
申请日：2009-05-27
申请人： ATSUHIKO HIRATA , Gaku Kamitani , Hiroaki Wada , Midori Sunaga , Shungo Kanai
发明人： ATSUHIKO HIRATA , Gaku Kamitani , Hiroaki Wada , Midori Sunaga , Shungo Kanai
IPC分类号： F04B43/04
CPC分类号： F04B45/04 , F04B43/046 , F04B45/047 , F04B53/1077
摘要： A piezoelectric micro-blower capable of efficiently conveying compressive fluid without use of a check valve and ensuring a sufficient flow rate. The micro-blower has a blower body with a first wall and a second wall. Openings are formed in the respective walls and face a center of a diaphragm. An inflow path allowing the openings to communicate with the outside is formed between the walls. By applying a voltage to a piezoelectric element to cause the diaphragm to vibrate, a part of the first wall close to the first opening vibrates. Thus, gas can be drawn from the inflow path and discharged from the opening in the second wall.
摘要翻译：一种能够有效地输送压缩流体而不使用止回阀并确保足够的流量的压电微型鼓风机。微型鼓风机具有带有第一壁和第二壁的鼓风机主体。开口形成在相应的壁中并面向隔膜的中心。在壁之间形成允许开口与外部连通的流入路径。通过向压电元件施加电压以使隔膜振动，靠近第一开口的第一壁的一部分振动。因此，气体可以从流入路径抽出并从第二壁的开口排出。

4. 发明申请

US20090232682A1 PIEZOELECTRIC MICRO-BLOWER 审中-公开
公开(公告)号：US20090232682A1
公开(公告)日：2009-09-17
申请号：US12472798
申请日：2009-05-27
申请人： Atsuhiko Hirata , Gaku Kamitani , Hiroaki Wada , Midori Sunaga , Shungo Kanai
发明人： Atsuhiko Hirata , Gaku Kamitani , Hiroaki Wada , Midori Sunaga , Shungo Kanai
IPC分类号： F04B43/04
CPC分类号： F04B45/04 , F04B43/046 , F04B45/047 , F04B53/1077
摘要： A piezoelectric micro-blower capable of efficiently conveying compressive fluid without use of a check valve and ensuring a sufficient flow rate. The micro-blower has a blower body with a first wall and a second wall. Openings are formed in the respective walls and face a center of a diaphragm. An inflow path allowing the openings to communicate with the outside is formed between the walls. By applying a voltage to a piezoelectric element to cause the diaphragm to vibrate, a part of the first wall close to the first opening vibrates. Thus, gas can be drawn from the inflow path and discharged from the opening in the second wall.

5. 发明授权

US07957205B2 Semiconductor device and control method of the same 有权
公开(公告)号：US07957205B2
公开(公告)日：2011-06-07
申请号：US12574413
申请日：2009-10-06
申请人： Hiroaki Wada , Kazuhiro Kurihara
发明人： Hiroaki Wada , Kazuhiro Kurihara
IPC分类号： G11C5/14
CPC分类号： G11C16/30 , G11C5/147 , H04N5/23241
摘要： The present invention is a semiconductor device including: a resistor R11 (first resistor part) and an FET 15 (second resistor part) connected in series between a power supply Vcc (first power supply) and ground (second power supply); an output node N11 provided between the resistor R11 and FET 15 and used for outputting a reference voltage; a feedback node N12 provided between the power supply Vcc and the ground; and a voltage control circuit (19) that maintains a voltage of the feedback node N12 at a constant level by using the reference voltage of the output node N11 and the voltage of the feedback node N12. The present invention can provide a semiconductor device having a reference voltage generating circuit capable of generating the reference voltage that does not greatly depend on a power supply voltage and its control method.

6. 发明申请

US20100142269A1 MEMORY EMPLOYING REDUNDANT CELL ARRAY OF MULTI-BIT CELLS 有权
标题翻译：使用多个细胞的冗余细胞阵列的记忆
公开(公告)号：US20100142269A1
公开(公告)日：2010-06-10
申请号：US12329475
申请日：2008-12-05
申请人： Keiichiro Kikuchi , Norihiko Yamaki , Hiroaki Wada
发明人： Keiichiro Kikuchi , Norihiko Yamaki , Hiroaki Wada
IPC分类号： G11C16/00 , G11C16/04 , G11C29/00 , G11C16/06
CPC分类号： G11C11/5621 , G11C11/5671 , G11C16/0475 , G11C29/808
摘要： A memory that employs a redundant cell array for recovery of one or more failed core cell arrays of multi-bit memory cells is described. The memory includes a plurality of core cell arrays, at least one redundant cell array, and a memory controller. The memory controller is configured to dynamically assign the redundant cell array to a failed core cell array when erasing at least a portion of the plurality of core cell arrays. The memory controller is further configured to provide read/write access to the redundant cell array when the failed core cell array is selected for read/write access.
摘要翻译：描述了采用冗余单元阵列来恢复多比特存储器单元的一个或多个失败的核心单元阵列的存储器。存储器包括多个核心单元阵列，至少一个冗余单元阵列和存储器控制器。存储器控制器被配置为当擦除多个核心单元阵列的至少一部分时，将冗余单元阵列动态地分配给故障核心单元阵列。存储器控制器还被配置为当选择故障核心单元阵列进行读/写访问时，向冗余单元阵列提供读/写访问。

7. 发明授权

US07606085B2 Semiconductor device and control method of the same 有权
标题翻译：半导体器件及其控制方法相同
公开(公告)号：US07606085B2
公开(公告)日：2009-10-20
申请号：US11501449
申请日：2006-08-08
申请人： Hiroaki Wada , Kazuhiro Kurihara
发明人： Hiroaki Wada , Kazuhiro Kurihara
IPC分类号： G11C5/14
CPC分类号： G11C16/30 , G11C5/147 , H04N5/23241
摘要： The present invention is a semiconductor device including: a resistor R11 (first resistor part) and an FET 15 (second resistor part) connected in series between a power supply Vcc (first power supply) and ground (second power supply); an output node N11 provided between the resistor R11 and FET 15 and used for outputting a reference voltage; a feedback node N12 provided between the power supply Vcc and the ground; and a voltage control circuit (19) that maintains a voltage of the feedback node N12 at a constant level by using the reference voltage of the output node N11 and the voltage of the feedback node N12. The present invention can provide a semiconductor device having a reference voltage generating circuit capable of generating the reference voltage that does not greatly depend on a power supply voltage and its control method.
摘要翻译：本发明是一种半导体器件，包括：串联连接在电源Vcc（第一电源）和地（第二电源）之间的电阻器R11（第一电阻器部分）和FET 15（第二电阻器部件）; 输出节点N11，设置在电阻器R11和FET15之间，用于输出参考电压; 设置在电源Vcc和地之间的反馈节点N12; 以及通过使用输出节点N11的参考电压和反馈节点N12的电压将反馈节点N12的电压维持在恒定电平的电压控制电路（19）。本发明可以提供一种具有能够产生不依赖于电源电压的参考电压的参考电压产生电路及其控制方法的半导体器件。

8. 发明申请

US20070030740A1 Semiconductor device and control method of the same 有权
标题翻译：半导体器件及其控制方法相同
公开(公告)号：US20070030740A1
公开(公告)日：2007-02-08
申请号：US11501449
申请日：2006-08-08
申请人： Hiroaki Wada , Kazuhiro Kurihara
发明人： Hiroaki Wada , Kazuhiro Kurihara
IPC分类号： G11C5/14
CPC分类号： G11C16/30 , G11C5/147 , H04N5/23241
摘要： The present invention is a semiconductor device including: a resistor R11 (first resistor part) and an FET 15 (second resistor part) connected in series between a power supply Vcc (first power supply) and ground (second power supply); an output node N11 provided between the resistor R11 and FET 15 and used for outputting a reference voltage; a feedback node N12 provided between the power supply Vcc and the ground; and a voltage control circuit (19) that maintains a voltage of the feedback node N12 at a constant level by using the reference voltage of the output node N11 and the voltage of the feedback node N12. The present invention can provide a semiconductor device having a reference voltage generating circuit capable of generating the reference voltage that does not greatly depend on a power supply voltage and its control method.
摘要翻译：本发明是一种半导体器件，包括：串联连接在电源Vcc（第一电源）和地（第二电源）之间的电阻器R11（第一电阻器部分）和FET 15（第二电阻器部件）; 输出节点N11，设置在电阻器R11和FET15之间，用于输出参考电压; 设置在电源Vcc和地之间的反馈节点N12; 以及通过使用输出节点N11的参考电压和反馈节点N12的电压将反馈节点N12的电压维持在恒定电平的电压控制电路（19）。本发明可以提供一种具有能够产生不依赖于电源电压的参考电压的参考电压产生电路及其控制方法的半导体器件。

9. 发明授权

US6001756A Process for making a silicon carbide sintered body 失效
标题翻译：制造碳化硅烧结体的方法
公开(公告)号：US6001756A
公开(公告)日：1999-12-14
申请号：US853719
申请日：1997-05-09
申请人： Yoshitomo Takahashi , Hiroaki Wada , Taro Miyamoto
发明人： Yoshitomo Takahashi , Hiroaki Wada , Taro Miyamoto
IPC分类号： C04B35/575 , C04B35/569
CPC分类号： C04B35/575
摘要： A silicon carbide sintered body according to the present invention is a silicon carbide sintered body having a density of 2.9 g/cm.sup.3 or higher, obtained by means of hot pressing a mixture of silicon carbide powder and a non-metal-based sintering additive such as an organic compound which produces carbon upon heating at a temperature of 2,000.degree. C. to 2,400.degree. C. and under a pressure of 300 to 700 kgf/cm.sup.2 in a non-oxidizing atmosphere. It is preferable that the silicon carbide powder have an average particle diameter of from 0.01 to 10 .mu.m and that the non-metal sintering additive be a resol type phenol resin. The present invention is to provide a silicon carbide sintered body of high quality which has a high density, a high purity, and a high electrical conductivity and which is useful for semiconductor manufacturing industry.
摘要翻译：根据本发明的碳化硅烧结体是通过热压碳化硅粉末和非金属类烧结添加剂的混合物得到的密度为2.9g / cm 3以上的碳化硅烧结体，例如在非氧化性气氛中，在2,000〜2400℃，300〜700kgf / cm2的压力下加热生成碳的有机化合物。碳化硅粉末的平均粒径优选为0.01〜10μm，非金属烧结添加剂为甲阶型酚醛树脂。本发明提供一种高密度，高纯度，高导电性的高品质碳化硅烧结体，可用于半导体制造业。

10. 发明授权

US4702900A Method of producing silicon carbide 失效
标题翻译：生产碳化硅的方法
公开(公告)号：US4702900A
公开(公告)日：1987-10-27
申请号：US849281
申请日：1986-04-08
申请人： Yasuo Kurachi , Katsuhiko Arai , Hiroaki Wada , Yoji Watabe , Sanae Irako
发明人： Yasuo Kurachi , Katsuhiko Arai , Hiroaki Wada , Yoji Watabe , Sanae Irako
IPC分类号： C01B31/36
CPC分类号： B82Y30/00 , C01B31/36 , C01P2002/60 , C01P2002/72 , C01P2004/64 , C01P2006/10 , C01P2006/80
摘要： In a method of producing silicon carbide by heating starting materials comprising siliceous material and carbonaceous material in a non-oxidizing atmosphere, those ingredients contained in gases evolved upon heating and solidified at a low temperature into impurities for silicon carbide are eliminated from the atmosphere during heating.
摘要翻译：在通过在非氧化性气氛中加热含有硅质材料和含碳材料的原料来生产碳化硅的方法中，在加热期间放出的气体中含有的成分在低温下固化成碳化硅的杂质在加热期间从大气中除去。

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