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1. 发明申请

US20070141815A1 PROCESSING METHOD, PROCESSING APPARATUS, CRYSTALLIZATION METHOD AND CRYSTALLIZATION APPARATUS USING PULSED LASER BEAM 失效
标题翻译：处理方法，处理装置，结晶方法和使用脉冲激光束的结晶装置
公开(公告)号：US20070141815A1
公开(公告)日：2007-06-21
申请号：US11679724
申请日：2007-02-27
申请人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masato Hiramatsu , Noritaka Akita , Tomoya Kato
发明人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masato Hiramatsu , Noritaka Akita , Tomoya Kato
IPC分类号： H01L21/268
CPC分类号： B23K26/0853 , B23K26/03 , B23K26/032 , B23K26/0622 , B23K2101/40
摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.
摘要翻译：在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制检测到错误的激光照射的时刻，进行激光加工。此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测，并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

2. 发明申请

US20080289573A1 CRYSTALLIZATION METHOD, CRYSTALLIZATION APPARATUS, PROCESSED SUBSTRATE, THIN FILM TRANSISTOR AND DISPLAY APPARATUS 失效
标题翻译：结晶方法，结晶装置，处理基板，薄膜晶体管和显示装置
公开(公告)号：US20080289573A1
公开(公告)日：2008-11-27
申请号：US12166997
申请日：2008-07-02
申请人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： B05B5/00
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

3. 发明申请

US20090223941A1 PHASE SHIFTER FOR LASER ANNEALING 有权
标题翻译：用于激光退火的相变器
公开(公告)号：US20090223941A1
公开(公告)日：2009-09-10
申请号：US12469345
申请日：2009-05-20
申请人： Masayuki JYUMONJI
发明人： Masayuki JYUMONJI
IPC分类号： B23K26/00 , B23K26/06
CPC分类号： B23K26/066 , H01L21/02678 , H01L27/1285 , H01L27/1296 , Y10T117/1004
摘要： An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of the layers. The first layer and the third layer are arranged so that a second layer is sandwiched between the layers in a state in which the surfaces provided with the grooves face each other. A peripheral edge portion of the first layer is laminated on that of the third layer by a spacer. The second layer is made of an inactive gas introduced between the first layer and the third layer.
摘要翻译：本发明的目的是提供一种能够有效防止颗粒粘附的激光退火用移相器。第一层和第三层由石英玻璃制成，并且在这些层的表面中形成微细凹槽的二维图案。第一层和第三层被布置成使得在设置有沟槽的表面彼此面对的状态下，第二层被夹在层之间。第一层的外围边缘部分通过间隔件层压在第三层的边缘部分上。第二层由在第一层和第三层之间引入的惰性气体制成。

4. 发明申请

US20060275673A1 PHASE SHIFTER FOR LASER ANNEALING 失效
公开(公告)号：US20060275673A1
公开(公告)日：2006-12-07
申请号：US11276992
申请日：2006-03-20
申请人： Masayuki JYUMONJI
发明人： Masayuki JYUMONJI
IPC分类号： G03F1/00 , H01L21/00 , H01L21/84
CPC分类号： B23K26/066 , H01L21/02678 , H01L27/1285 , H01L27/1296 , Y10T117/1004
摘要： An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of the layers. The first layer and the third layer are arranged so that a second layer is sandwiched between the layers in a state in which the surfaces provided with the grooves face each other. A peripheral edge portion of the first layer is laminated on that of the third layer by a spacer. The second layer is made of an inactive gas introduced between the first layer and the third layer.

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