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1. 发明授权

US07858509B2 High-dielectric film substrate processing method 有权
标题翻译：高介电膜基板加工方法
公开(公告)号：US07858509B2
公开(公告)日：2010-12-28
申请号：US12088940
申请日：2007-04-25
申请人： Miki Aruga , Kazuyoshi Yamazaki , Shintaro Aoyama , Kouji Shimomura
发明人： Miki Aruga , Kazuyoshi Yamazaki , Shintaro Aoyama , Kouji Shimomura
IPC分类号： H01L21/3205
CPC分类号： H01L21/3144 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/31612 , H01L21/31641 , H01L29/518
摘要： A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.
摘要翻译：在包括将氮原子引入高电介质膜的第一处理位置和用于对高电介质膜进行热处理的第二处理位置的单晶片基板处理装置中公开的基板处理方法包括：将多个基板依次传送为一个一个地处理到第一处理位置和第二处理位置; 依次对待处理的基板上的高电介质膜进行氮原子的引入和热处理，其中在第一处理后的第二处理位置的待处理基板上的处理在30秒内开始位置。

2. 发明申请

US20080254644A1 Method of Substrate Treatment, Computer-Readable Recording Medium, Substrate Treating Apparatus and Substrate Treating System 有权
标题翻译：基板处理方法，计算机可读记录介质，基板处理装置和基板处理系统
公开(公告)号：US20080254644A1
公开(公告)日：2008-10-16
申请号：US12088940
申请日：2007-04-25
申请人： Miki Aruga , Kazuyoshi Yamazaki , Shintaro Aoyama , Kouji Shimomura
发明人： Miki Aruga , Kazuyoshi Yamazaki , Shintaro Aoyama , Kouji Shimomura
IPC分类号： H01L21/31 , C23C16/52 , G06F19/00
CPC分类号： H01L21/3144 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/31604 , H01L21/31612 , H01L21/31641 , H01L29/518
摘要： A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.
摘要翻译：在包括将氮原子引入高电介质膜的第一处理位置和用于对高电介质膜进行热处理的第二处理位置的单晶片基板处理装置中公开的基板处理方法包括：依次将多个基板输送为一个一个地处理到第一处理位置和第二处理位置; 依次对待处理的基板上的高电介质膜进行氮原子的引入和热处理，其中在第一处理后的第二处理位置的待处理基板上的处理在30秒内开始位置。

3. 发明申请

US20080233764A1 Formation of Gate Insulation Film 审中-公开
标题翻译：门绝缘膜的形成
公开(公告)号：US20080233764A1
公开(公告)日：2008-09-25
申请号：US11547671
申请日：2005-04-11
申请人： Tsuyoshi Takahashi , Kouji Shimomura , Genji Nakamura , Shintaro Aoyama , Kazuyoshi Yamazaki
发明人： Tsuyoshi Takahashi , Kouji Shimomura , Genji Nakamura , Shintaro Aoyama , Kazuyoshi Yamazaki
IPC分类号： H01L21/283 , C23G1/02
CPC分类号： H01L21/28202 , C23C16/401 , C23C16/56 , H01L21/28194 , H01L21/3143 , H01L21/316 , H01L21/31608 , H01L21/31645 , H01L29/518
摘要： A method of forming a gate insulation film 4 comprising a hafnium silicate material with a SiO2 equivalent oxide thickness of 1.45 nm or less on a silicon substrate 1 is disclosed. The method includes the steps of: cleaning a surface of the silicon substrate 1 to establish thereon a clean surface on which substantially no oxygen is present; forming a hafnium silicate film 2 on the clean surface of the silicon substrate 1 by a CVD process using an amide type organic hafnium compound and a silicon-containing raw material; applying an oxidation treatment to the hafnium silicate film 2, and applying a nitriding treatment to the hafnium silicate film 2 after applying the oxidation treatment. According to the method, a gate insulation film with favorable surface roughness can be obtained even if the film thickness is thin.
摘要翻译：公开了一种在硅衬底1上形成厚度为1.45nm或更小的SiO 2 2当量氧化物厚度的硅酸铪材料的栅极绝缘膜4的方法。该方法包括以下步骤：清洁硅衬底1的表面以在其上建立基本上不存在氧的清洁表面; 通过使用酰胺型有机铪化合物和含硅原料的CVD法在硅衬底1的清洁表面上形成硅酸铪膜2; 对硅酸铪膜2进行氧化处理，在进行氧化处理后对硅酸铪膜2进行氮化处理。根据该方法，即使膜厚较薄，也可获得具有良好表面粗糙度的栅极绝缘膜。

4. 发明申请

US20060205188A1 Plasma igniting method and substrate processing method 有权
标题翻译：等离子点火方法和基板处理方法
公开(公告)号：US20060205188A1
公开(公告)日：2006-09-14
申请号：US11432332
申请日：2006-05-12
申请人： Masanobu Igeta , Kazuyoshi Yamazaki , Shintaro Aoyama , Hiroshi Shinriki
发明人： Masanobu Igeta , Kazuyoshi Yamazaki , Shintaro Aoyama , Hiroshi Shinriki
IPC分类号： C23F1/00 , H01L21/20
CPC分类号： H01J37/32009 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02332 , H01L21/0234 , H01L21/31662
摘要： A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container 21, and ultraviolet light is irradiated to the gas while gas inside the processing container 21 is being discharged. After that, a remote plasma source 26 is driven to ignite plasma.
摘要翻译：一种解决在没有被内部保持抽吸到真空中的处理容器的重新启动操作中等离子体不会点燃的问题的方法。含有氧的气体通过处理容器21，在排出处理容器21内的气体的同时对该气体照射紫外线。之后，驱动远程等离子体源26以点燃等离子体。

5. 发明申请

US20060174833A1 Substrate treating apparatus and method of substrate treatment 审中-公开
标题翻译：基板处理装置及基板处理方法
公开(公告)号：US20060174833A1
公开(公告)日：2006-08-10
申请号：US10549285
申请日：2003-12-08
申请人： Kazuyoshi Yamazaki , Shintaro Aoyama , Masanobu Igeta , Hiroshi Shinriki
发明人： Kazuyoshi Yamazaki , Shintaro Aoyama , Masanobu Igeta , Hiroshi Shinriki
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/3144 , H01L21/0214 , H01L21/02326
摘要： It is intended to efficiently nitride an extremely thin oxide film or oxynitride film of 0.4 nm or less thickness while minimizing a film increase. In particular, oxygen radicals are generated through oxygen radical generating unit so as to oxidize a silicon substrate with the generated oxygen radicals, thereby forming an oxide film on the silicon substrate, and further nitrogen radicals are generated through nitrogen radical generating unit so as to nitride the surface of the oxide film, thereby forming an oxynitride film.
摘要翻译：旨在有效地氮化极薄的氧化膜或氮氧化物膜，其厚度为0.4nm或更小，同时使膜增加最小化。特别地，通过氧自由基产生单元产生氧自由基，以便利用所产生的氧自由基氧化硅衬底，从而在硅衬底上形成氧化膜，并且通过氮自由基产生单元产生另外的氮自由基，从而氮化物氧化膜的表面，从而形成氮氧化物膜。

6. 发明授权

US07867920B2 Method for modifying high-k dielectric thin film and semiconductor device 有权
标题翻译：用于修改高k电介质薄膜和半导体器件的方法
公开(公告)号：US07867920B2
公开(公告)日：2011-01-11
申请号：US12097888
申请日：2006-11-22
申请人： Kazuyoshi Yamazaki , Shintaro Aoyama , Koji Akiyama
发明人： Kazuyoshi Yamazaki , Shintaro Aoyama , Koji Akiyama
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/67207 , H01L21/268 , H01L21/28211 , H01L21/31645 , H01L21/318
摘要： There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the surface thereof, and a modification process for applying UV rays to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the high-k dielectric thin film. According to the above constitution, the carbon component can be eliminated from the high-k dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.
摘要翻译：提供了一种使用金属有机化合物材料修饰在物体表面上设置的高k电介质薄膜的方法。该方法包括用于向物体提供形成在其表面上的高k电介质薄膜的制备方法，以及在惰性气体气氛中向高电介质薄膜施加紫外线的改进方法，同时将物体保持在预定的温度修改高k电介质薄膜。根据上述结构，可以从高k电介质薄膜中除去碳成分，并且整个材料可以热收缩以提高密度，从而可以防止缺陷的发生，并且可以提高膜密度提高比电容率，从而提供高水平的电性能。

7. 发明授权

US07754293B2 Film forming method 有权
标题翻译：成膜方法
公开(公告)号：US07754293B2
公开(公告)日：2010-07-13
申请号：US11454095
申请日：2006-06-16
申请人： Shintaro Aoyama , Masanobu Igeta , Kazuyoshi Yamazaki
发明人： Shintaro Aoyama , Masanobu Igeta , Kazuyoshi Yamazaki
IPC分类号： B05D3/00 , C08J7/18 , G21H5/00 , G21H1/00 , B01J19/08 , B29C71/02 , B29C71/04 , C04B41/00 , H01F41/00
CPC分类号： H01L21/67109 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/0234 , H01L21/31662 , H01L21/67155
摘要： A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450° C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.
摘要翻译：一种用于在预定处理温度下在处理容器中在待处理基板的表面上形成氧化膜的成膜方法，其中所述方法包括将所述基板的温度升高到预定处理温度的升温步骤，提高温度的步骤，包括在基板达到450℃的温度之前将基板保持在含氧气氛中的步骤。成膜方法还包括在提升温度的步骤之后，形成通过用能够激发氧气的能量照射衬底表面的自由基氧化物膜。

8. 发明授权

US07497964B2 Plasma igniting method and substrate processing method 有权
标题翻译：等离子点火方法和基板处理方法
公开(公告)号：US07497964B2
公开(公告)日：2009-03-03
申请号：US11432332
申请日：2006-05-12
申请人： Masanobu Igeta , Kazuyoshi Yamazaki , Shintaro Aoyama , Hiroshi Shinriki
发明人： Masanobu Igeta , Kazuyoshi Yamazaki , Shintaro Aoyama , Hiroshi Shinriki
IPC分类号： B44C1/22 , C03C15/00
CPC分类号： H01J37/32009 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02332 , H01L21/0234 , H01L21/31662
摘要： A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container 21, and ultraviolet light is irradiated to the gas while gas inside the processing container 21 is being discharged. After that, a remote plasma source 26 is driven to ignite plasma.
摘要翻译：一种解决在没有被内部保持抽吸到真空中的处理容器的重新启动操作中等离子体不会点燃的问题的方法。含有氧的气体通过处理容器21，在排出处理容器21内的气体的同时照射气体。之后，驱动远程等离子体源26以点燃等离子体。

9. 发明申请

US20090302433A1 METHOD FOR MODIFYING HIGH-K DIELECTRIC THIN FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于修改高K介电薄膜和半导体器件的方法
公开(公告)号：US20090302433A1
公开(公告)日：2009-12-10
申请号：US12097888
申请日：2006-11-22
申请人： Kazuyoshi Yamazaki , Shintaro Aoyama , Koji Akiyama
发明人： Kazuyoshi Yamazaki , Shintaro Aoyama , Koji Akiyama
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/268 , H01L29/78
CPC分类号： H01L21/67207 , H01L21/268 , H01L21/28211 , H01L21/31645 , H01L21/318
摘要： There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the surface thereof, and a modification process for applying UV rays to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the high-k dielectric thin film. According to the above constitution, the carbon component can be eliminated from the high-k dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.
摘要翻译：提供了一种使用金属有机化合物材料修饰在物体表面上设置的高k电介质薄膜的方法。该方法包括用于向物体提供形成在其表面上的高k电介质薄膜的制备方法，以及在惰性气体气氛中向高电介质薄膜施加紫外线的改进方法，同时将物体保持在预定的温度修改高k电介质薄膜。根据上述结构，可以从高k电介质薄膜中除去碳成分，并且整个材料可以热收缩以提高密度，从而可以防止缺陷的发生，并且可以提高膜密度提高比电容率，从而提供高水平的电性能。

10. 发明申请

US20060234515A1 Film forming method 有权
标题翻译：成膜方法
公开(公告)号：US20060234515A1
公开(公告)日：2006-10-19
申请号：US11454095
申请日：2006-06-16
申请人： Shintaro Aoyama , Masanobu Igeta , Kazuyoshi Yamazaki
发明人： Shintaro Aoyama , Masanobu Igeta , Kazuyoshi Yamazaki
IPC分类号： H01L21/31
CPC分类号： H01L21/67109 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/0234 , H01L21/31662 , H01L21/67155
摘要： A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450° C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.
摘要翻译：一种用于在预定处理温度下在处理容器中在待处理基板的表面上形成氧化膜的成膜方法，其中所述方法包括将所述基板的温度升高到预定处理温度的升温步骤，提高温度的步骤，包括在基板达到450℃的温度之前将基板保持在含氧气氛中的步骤。成膜方法还包括在提升温度的步骤之后，形成通过用能够激发氧气的能量照射衬底表面的自由基氧化物膜。

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