专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09530610B2 Blanking aperture array device for multi-beams, and fabrication method of blanking aperture array device for multi-beams 有权
标题翻译：用于多光束的消隐孔径阵列器件，以及用于多光束的孔径阵列器件的制作方法
公开(公告)号：US09530610B2
公开(公告)日：2016-12-27
申请号：US14953959
申请日：2015-11-30
申请人： NuFlare Technology, Inc. , NTT Advanced Technology Corporation
发明人： Kazuhiro Chiba , Hiroshi Matsumoto , Munehiro Ogasawara , Ryoichi Yoshikawa , Hirofumi Morita , Hirokazu Yamada , Teruaki Safu , Toshifumi Konishi , Takaaki Matsushima , Kazuhisa Kudo , Masaki Yano , Katsuyuki Machida
IPC分类号： H01J37/04 , H01J37/09 , G03F1/20
CPC分类号： H01J37/045 , H01J2237/043 , H01J2237/0432 , H01J2237/0437 , H01J2237/303 , H01J2237/3175 , H01J2237/31774
摘要： A method for fabricating a blanking aperture array device for multi-beams includes forming, using a substrate over which a first insulating film, a first metal film, a second insulating film, and a second metal film are laminated in order, electrodes and pads on the second metal film, removing a part of the second metal film, removing the second insulating film using, as a mask, the electrodes, the pads, and a remaining part of the second metal film, and forming openings each being between a pair of electrodes, wherein, a part of the second metal film is etched such that some part of it remains in regions each connecting one of the electrodes and one of the pads, and a region in which entire openings are formed except the openings themselves is configured by the electrodes, pads, and first and second metal films such that the insulating film is not exposed.
摘要翻译：一种用于制造用于多光束的消隐孔阵列器件的方法包括使用基板依次形成第一绝缘膜，第一金属膜，第二绝缘膜和第二金属膜，基板上依次层叠电极和焊盘第二金属膜，去除第二金属膜的一部分，使用作为掩模的电极，焊盘和第二金属膜的剩余部分去除第二绝缘膜，并且形成开口，每个开口分别位于一对电极，其中，第二金属膜的一部分被蚀刻，使得其中的一部分保留在每个连接电极中的一个和一个焊盘的区域中，并且除了开口本身之外还形成有开口本身的整个开口的区域电极，焊盘以及第一和第二金属膜，使得绝缘膜不被暴露。

2. 发明授权

US10607908B2 Semiconductor device 有权
公开(公告)号：US10607908B2
公开(公告)日：2020-03-31
申请号：US16009753
申请日：2018-06-15
申请人： NuFlare Technology, Inc.
发明人： Kazuhiro Chiba , Yoshikuni Goshima , Shinsuke Nabeya , Shiro Okada , Kentaro Mori
IPC分类号： H01L23/16 , H01L23/00 , H01L23/15 , H01J37/147 , H01L23/14 , H01L29/06 , H01L23/13
摘要： A semiconductor device according to an embodiment includes a semiconductor chip including a region having through holes; a substrate having a first opening larger than the region, the substrate containing a resin or a ceramic; a spacer provided between the semiconductor chip and the substrate, the spacer having a second opening larger than the region; a first bond provided between the semiconductor chip and the spacer; and a second bond provided between the spacer and the substrate.

3. 发明授权

US09530616B2 Blanking aperture array and charged particle beam writing apparatus 有权
标题翻译：消隐孔径阵列和带电粒子束写入装置
公开(公告)号：US09530616B2
公开(公告)日：2016-12-27
申请号：US14857095
申请日：2015-09-17
申请人： NuFlare Technology, Inc.
发明人： Hiroshi Yamashita , Hiroshi Matsumoto , Kazuhiro Chiba
IPC分类号： G21K5/04 , H01J37/317
CPC分类号： H01J37/3174 , H01J37/045 , H01J37/3177 , H01J2237/0435 , H01J2237/31774
摘要： In one embodiment, a blanking aperture array includes a substrate including an upper surface on which an insulating film is provided, a plurality of blanking aperture portions provided in the substrate, each of the plurality of blanking aperture portions including one of penetration holes, through which a predetermined beam passes, and one of blanking electrodes and one of ground electrodes which are provided on the insulating film, and the blanking electrodes and the ground electrodes configured to perform blanking deflection of the predetermined beam, and a high-resistivity film provided so as to cover the insulating film and at least part of the ground electrodes, the high-resistivity film having an electric resistance that is higher than an electric resistance of the ground electrodes and lower than an electric resistance of the insulating film.
摘要翻译：在一个实施例中，消隐孔阵列包括：衬底，其包括设置绝缘膜的上表面;设置在衬底中的多个消隐孔部，多个消隐孔部分中的每一个包括一个穿透孔，预定的光束通过，并且设置在绝缘膜上的消隐电极和接地电极之一以及被配置为执行预定光束的消隐偏转的消隐电极和接地电极以及设置为如下的高电阻膜覆盖绝缘膜和至少一部分接地电极，高电阻膜具有高于接地电极的电阻并低于绝缘膜的电阻的电阻。

4. 发明授权

US09805905B2 Blanking device for multi-beam of charged particle writing apparatus using multi-beam of charged particle and defective beam blocking method for multi-beam of charged particle 有权
公开(公告)号：US09805905B2
公开(公告)日：2017-10-31
申请号：US14838907
申请日：2015-08-28
申请人： NuFlare Technology, Inc.
发明人： Hiroshi Yamashita , Ryoichi Yoshikawa , Kazuhiro Chiba , Hiroshi Matsumoto
IPC分类号： H01J37/04
CPC分类号： H01J37/045 , H01J37/1471 , H01J37/20 , H01J37/3026 , H01J37/3177 , H01J2237/043 , H01J2237/0435 , H01J2237/20292 , H01J2237/30483 , H01J2237/3175
摘要： A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式