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1. 发明授权

US10872743B2 Sample holding mechanism, manufacturing method for same, and charged particle beam device 有权
公开(公告)号：US10872743B2
公开(公告)日：2020-12-22
申请号：US16029751
申请日：2018-07-09
申请人： HITACHI, LTD.
发明人： Akira Sugawara , Yoshio Takahashi , Tetsuya Akashi , Toshiaki Tanigaki
IPC分类号： H01J37/20 , H01J37/244 , H01J37/22 , G03H5/00 , H01J37/04
CPC分类号： H01J37/20 , G03H5/00 , H01J37/045 , H01J37/22 , H01J37/244 , G03H2224/04 , H01J2237/043 , H01J2237/20
摘要： Continuous and automatic acquisition of electron beam holograms is made possible by using a sample holding mechanism that includes a sample end region that has a linear shape that is suited for electron beam holography, separates a thin-film rectangular window with an extreme-thin support film that supports a sample being disposed and a rectangular hole that has a linear-shaped edge and through which a reference wave is transmitted from each other, and configures a part of a layer that is thicker than the support film.

2. 发明申请

US20170243715A1 INSPECTION APPARATUS AND INSPECTION METHOD 审中-公开
公开(公告)号：US20170243715A1
公开(公告)日：2017-08-24
申请号：US15434618
申请日：2017-02-16
申请人： NuFlare Technology, Inc.
发明人： Munehiro OGASAWARA
IPC分类号： H01J37/244 , H01J37/26 , H01J37/20 , H01J37/29
CPC分类号： H01J37/244 , H01J37/20 , H01J37/263 , H01J37/28 , H01J37/29 , H01J2237/043 , H01J2237/2449 , H01J2237/24495 , H01J2237/24592 , H01J2237/2804 , H01J2237/2806 , H01J2237/2817
摘要： According to one embodiment, an inspection apparatus includes an irradiation device irradiating an inspection target substrate with multiple beams, a detector detecting each of a plurality of charged particle beams formed by charged particles emitted from the inspection target substrate as an electrical signal, and a comparison processing circuitry performing pattern inspection by comparing image data of a pattern formed on the inspection target substrate, the pattern being reconstructed in accordance with the detected electrical signals, and reference image data. The detector includes a plurality of detection elements that accumulate charges, and a detection circuit that reads out the accumulated charges. The plurality of detection elements are grouped into a plurality of groups. The detection circuit operates in a manner of, during a period in which the charged particle beams are applied to the detection elements included in one group, reading out the charges accumulated in the detection elements included in one or more other groups.

3. 发明授权

US09673018B2 Charged particle beam writing apparatus and charged particle beam writing method 有权
公开(公告)号：US09673018B2
公开(公告)日：2017-06-06
申请号：US15145398
申请日：2016-05-03
申请人： NuFlare Technology, Inc.
发明人： Haruyuki Nomura
IPC分类号： H01J37/10 , H01J37/14 , H01J37/317 , H01J37/063 , H01J37/09
CPC分类号： H01J37/14 , H01J37/063 , H01J37/09 , H01J37/3174 , H01J2237/043 , H01J2237/0451 , H01J2237/0458 , H01J2237/0653
摘要： A charged particle beam writing apparatus includes a limiting aperture member at the downstream side of the emission source, arranged such that its height position can be selectively adjusted, according to condition, to be one of the n-th height position (n being an integer of 1 or more) based on the n-th condition depending on at least one of the height position of the emission source and an emission current value, and the (n+m)th height position (m being an integer of 1 or more) based on the (n+m)th condition depending on at least one of the height position of the emission source and the emission current value, and a shaping aperture member at the downstream side of the electron lens and the limiting aperture member to shape the charged particle beam by letting a part of the charged particle beam pass through a second opening.

4. 发明申请

US20160155600A1 BLANKING APERTURE ARRAY DEVICE FOR MULTI-BEAMS, AND FABRICATION METHOD OF BLANKING APERTURE ARRAY DEVICE FOR MULTI-BEAMS 有权
标题翻译：用于多层的空白阵列设备以及用于多层的孔径阵列设备的制造方法
公开(公告)号：US20160155600A1
公开(公告)日：2016-06-02
申请号：US14953959
申请日：2015-11-30
申请人： NuFlare Technology, Inc. , NTT Advanced Technology Corporation
发明人： Kazuhiro CHIBA , Hiroshi Matsumoto , Munehiro Ogasawara , Ryoichi Yoshikawa , Hirofumi Morita , Hirokazu Yamada , Teruaki Safu , Toshifumi Konishi , Takaaki Matsushima , Kazuhisa Kudo , Masaki Yano , Katsuyuki Machida
IPC分类号： H01J37/04
CPC分类号： H01J37/045 , H01J2237/043 , H01J2237/0432 , H01J2237/0437 , H01J2237/303 , H01J2237/3175 , H01J2237/31774
摘要： A method for fabricating a blanking aperture array device for multi-beams includes forming, using a substrate over which a first insulating film, a first metal film, a second insulating film, and a second metal film are laminated in order, electrodes and pads on the second metal film, removing a part of the second metal film, removing the second insulating film using, as a mask, the electrodes, the pads, and a remaining part of the second metal film, and forming openings each being between a pair of electrodes, wherein, a part of the second metal film is etched such that some part of it remains in regions each connecting one of the electrodes and one of the pads, and a region in which entire openings are formed except the openings themselves is configured by the electrodes, pads, and first and second metal films such that the insulating film is not exposed.
摘要翻译：一种用于制造用于多光束的消隐孔阵列器件的方法包括使用基板依次形成第一绝缘膜，第一金属膜，第二绝缘膜和第二金属膜，基板上依次层叠电极和焊盘第二金属膜，去除第二金属膜的一部分，使用作为掩模的电极，焊盘和第二金属膜的剩余部分去除第二绝缘膜，并且形成开口，每个开口分别位于一对电极，其中，第二金属膜的一部分被蚀刻，使得其中的一部分保留在每个连接电极中的一个和一个焊盘的区域中，并且除了开口本身之外还形成有开口本身的整个开口的区域电极，焊盘以及第一和第二金属膜，使得绝缘膜不被暴露。

5. 发明授权

US09123500B2 Automated ion beam idle 有权
标题翻译：自动离子束空闲
公开(公告)号：US09123500B2
公开(公告)日：2015-09-01
申请号：US13436916
申请日：2012-03-31
申请人： Tom Miller , Sean Kellogg , Jiri Zbranek
发明人： Tom Miller , Sean Kellogg , Jiri Zbranek
IPC分类号： H01J37/08 , H01J37/302 , H01J37/24 , H01J37/04
CPC分类号： H01J37/08 , H01J37/045 , H01J37/243 , H01J37/302 , H01J2237/043 , H01J2237/0805 , H01J2237/0817 , H01J2237/30472 , H01J2237/31749
摘要： An improved method and apparatus for shutting down and restoring an ion beam in an ion beam system. Preferred embodiments provide a system for improved power control of a focused ion beam source, which utilizes an automatic detection of when a charged particle beam system is idle (the beam itself is not in use) and then automatically reducing the beam current to a degree where little or no ion milling occurs at any aperture plane in the ion column. Preferred embodiments include a controller operable to modify voltage to an extractor electrode and/or to reduce voltage to a source electrode when idle state of an ion source of the charged particle beam system is detected.
摘要翻译：一种用于在离子束系统中关闭和还原离子束的改进的方法和装置。优选实施例提供了一种用于改进聚焦离子束源的功率控制的系统，其利用对带电粒子束系统何时空闲（束本身不使用）的自动检测，然后自动将束电流减小至在离子柱中的任何孔径平面处都发生很少或没有离子研磨。优选的实施例包括可操作以在检测到带电粒子束系统的离子源的空闲状态时，将电压修改为提取器电极和/或降低对源电极的电压的控制器。

6. 发明授权

US08759760B2 Inspection system 有权
标题翻译：检验系统
公开(公告)号：US08759760B2
公开(公告)日：2014-06-24
申请号：US13050035
申请日：2011-03-17
申请人： Dirk Zeidler , Ulrike Zeile
发明人： Dirk Zeidler , Ulrike Zeile
IPC分类号： G01N23/00
CPC分类号： H01J37/28 , H01J37/09 , H01J37/228 , H01J2237/043 , H01J2237/06333 , H01J2237/206 , H01J2237/24585
摘要： A combined inspection system for inspecting an object disposable in an object plane 19, comprises a particle-optical system, which provides a particle-optical beam path 3, and a light-optical system, which provides a light-optical beam path 5; and a controller 60, wherein the light-optical system comprises at least one light-optical lens 30 arranged in the light-optical beam, which comprises a first lens surface facing the object plane which has two lens surfaces 34, 35 and a through hole 32, wherein the particle-optical system comprises a beam deflection device 23, in order to scan a primary particle beam 15 over a part of the sample plane 19, and wherein the controller is configured to control the beam deflection device 23 in such a manner that a deflected primary particle beam 15 intersects an optical axis 3 of the particle-optical beam path in a plane which is arranged inside the through hole.
摘要翻译：用于检查物体平面19中的一次性物品的组合检查系统包括提供粒子光束路径3的粒子光学系统和提供光束光路5的光学系统; 以及控制器60，其中所述光学系统包括布置在所述光 - 光束中的至少一个光 - 透镜30，所述至少一个光 - 透镜30包括面对所述物平面的第一透镜表面，所述第一透镜表面具有两个透镜表面34,35和通孔 32，其中所述粒子光学系统包括光束偏转装置23，以便在样本平面19的一部分上扫描初级粒子束15，并且其中控制器被配置为以这种方式控制束偏转装置23 偏转的一次粒子束15在布置在通孔内的平面中与粒子光束路径的光轴3相交。

7. 发明申请

US20140147998A1 Ion Implantation at High Temperature Surface Equilibrium Conditions 有权
标题翻译：离子注入在高温表面平衡条件下
公开(公告)号：US20140147998A1
公开(公告)日：2014-05-29
申请号：US14170293
申请日：2014-01-31
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L21/265 , H01L21/67
CPC分类号： H01L21/67011 , C30B29/403 , C30B31/20 , C30B33/04 , H01J37/3171 , H01J2237/043 , H01J2237/188 , H01J2237/304 , H01J2237/31711 , H01J2237/31713 , H01L21/02381 , H01L21/0254 , H01L21/02573 , H01L21/26546 , H01L21/3245 , H01L29/2003
摘要： There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method may include situating a III-Nitride semiconductor body in a surface equilibrium chamber, establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of the III-Nitride semiconductor body, and heating the III-Nitride semiconductor body to an elevated implantation temperature in the surface equilibrium chamber while substantially maintaining the gas pressure. The method also includes implanting the III-Nitride semiconductor body in the surface equilibrium at the elevated implantation temperature chamber while substantially maintaining the gas pressure, the implanting being performed using an ion implanter interfacing with the surface equilibrium chamber.
摘要翻译：在此公开了在高温表面平衡条件下用于离子注入的方法和系统的各种实施方式。该方法可以包括将III-氮化物半导体体置于表面平衡室中，建立大于或等于III-氮化物半导体体的表面平衡压力的气体压力，并将III-氮化物半导体体加热到升高的注入温度在表面平衡室中，同时基本保持气体压力。该方法还包括将III-氮化物半导体体植入升高的植入温度室的表面平衡状态，同时基本上保持气体压力，使用与表面平衡室接合的离子注入机执行注入。

8. 发明申请

US20130256553A1 Automated Ion Beam Idle 有权
标题翻译：自动离子束空闲
公开(公告)号：US20130256553A1
公开(公告)日：2013-10-03
申请号：US13436916
申请日：2012-03-31
申请人： Tom Miller , Sean Kellogg , Jiri Zbranek
发明人： Tom Miller , Sean Kellogg , Jiri Zbranek
IPC分类号： H01J3/18 , H05H1/03
CPC分类号： H01J37/08 , H01J37/045 , H01J37/243 , H01J37/302 , H01J2237/043 , H01J2237/0805 , H01J2237/0817 , H01J2237/30472 , H01J2237/31749
摘要： An improved method and apparatus for shutting down and restoring an ion beam in an ion beam system. Preferred embodiments provide a system for improved power control of a focused ion beam source, which utilizes an automatic detection of when a charged particle beam system is idle (the beam itself is not in use) and then automatically reducing the beam current to a degree where little or no ion milling occurs at any aperture plane in the ion column. Preferred embodiments include a controller operable to modify voltage to an extractor electrode and/or to reduce voltage to a source electrode when idle state of an ion source of the charged particle beam system is detected.
摘要翻译：一种用于在离子束系统中关闭和还原离子束的改进的方法和装置。优选实施例提供了一种用于改进聚焦离子束源的功率控制的系统，其利用对带电粒子束系统何时空闲（束本身不使用）的自动检测，然后自动将束电流减小至在离子柱中的任何孔径平面处都发生很少或没有离子研磨。优选的实施例包括可操作以在检测到带电粒子束系统的离子源的空闲状态时，将电压修改为提取器电极和/或降低对源电极的电压的控制器。

9. 发明授权

US08536526B2 Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit 失效
标题翻译：操作纳米光栅以电探测集成电路的器件结构的方法
公开(公告)号：US08536526B2
公开(公告)日：2013-09-17
申请号：US12344651
申请日：2008-12-29
申请人： Paul D. Bell , Mark E. Masters , David S. Patrick
发明人： Paul D. Bell , Mark E. Masters , David S. Patrick
IPC分类号： G01N23/00
CPC分类号： H01J37/268 , G01R31/307 , H01J37/265 , H01J2237/043 , H01J2237/24564 , H01J2237/24592
摘要： Methods for nanoprobing a device structure of an integrated circuit. The method may include scanning a primary charged particle beam across a first region of the device structure with at least one probe proximate to the first region and a second region of the device structure is masked from the primary charged particle beam. The method may further include collecting secondary electrons emitted from the first region of the device structure and the at least one probe to form a secondary electron image. The secondary electron image includes the first region and the at least one probe as imaged portions and the second region as a non-imaged portion. Alternatively, the second region may be scanned by the charged particle beam at a faster scan rate than the first region so that the second region is also an imaged portion of the secondary electron image.
摘要翻译：用于纳米结构的集成电路的器件结构的方法。该方法可以包括利用靠近第一区域的至少一个探针扫描穿过器件结构的第一区域的初级带电粒子束，并且器件结构的第二区域被从初级带电粒子束掩蔽。该方法还可以包括收集从器件结构的第一区域发射的二次电子和至少一个探针以形成二次电子图像。二次电子图像包括作为成像部分的第一区域和至少一个探针，以及作为非成像部分的第二区域。或者，第二区域可以以比第一区域更快的扫描速率被带电粒子束扫描，使得第二区域也是二次电子图像的成像部分。

10. 发明授权

US08492715B2 Method of protecting a radiation detector in a charged particle instrument 有权
标题翻译：保护带电粒子仪器中的辐射探测器的方法
公开(公告)号：US08492715B2
公开(公告)日：2013-07-23
申请号：US13441344
申请日：2012-04-06
申请人： Maximus Theodorus Otten , Gerrit Cornelis Van Hoften , Joeri Lof
发明人： Maximus Theodorus Otten , Gerrit Cornelis Van Hoften , Joeri Lof
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/26 , H01J37/244 , H01J37/302 , H01J2237/0203 , H01J2237/043 , H01J2237/065 , H01J2237/22 , H01J2237/2441 , H01J2237/24455 , H01J2237/24507 , H01J2237/26 , H01J2237/262 , H01J2237/2802
摘要： The invention relates to a Method of protecting a direct electron detector (151) in a TEM. The invention involves predicting the current density on the detector before setting new beam parameters, such as changes to the excitation of condenser lenses (104), projector lenses (106) and/or beam energy. The prediction is made using an optical model or a Look-Up-Table. When the predicted exposure of the detector is less than a predetermined value, the desired changes are made, otherwise a warning message is generated and changes to the settings are postponed.
摘要翻译：本发明涉及一种在TEM中保护直接电子检测器（151）的方法。本发明涉及在设置新的光束参数之前预测检测器上的电流密度，例如对聚光透镜（104），投影透镜（106）和/或光束能量的激发的改变。使用光学模型或查找表进行预测。当检测器的预测曝光小于预定值时，进行所需的改变，否则产生警告消息并延迟对设置的改变。

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