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1. 发明授权

US08946737B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08946737B2
公开(公告)日：2015-02-03
申请号：US13570214
申请日：2012-08-08
申请人： Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang , Chia-Hung Huang , Shun-Kuei Yang
发明人： Ya-Wen Lin , Po-Min Tu , Shih-Cheng Huang , Chia-Hung Huang , Shun-Kuei Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007
摘要： A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm.
摘要翻译：发光二极管（LED）包括衬底，缓冲层和外延结构。衬底具有形成在其上的图案化结构的第一表面。图案形成结构包括多个突起。缓冲层布置在基板的第一表面上。外延结构布置在缓冲层上。外延结构包括顺序地布置在缓冲层上的第一半导体层，有源层和第二半导体层。第一半导体层具有附着到有源层的第二表面。每个突起的峰值与第一半导体层的第二表面之间的距离为0.5μm至2.5μm。

2. 发明授权

US08735919B2 Group III-nitride based semiconductor LED 有权
标题翻译： III族氮化物基半导体LED
公开(公告)号：US08735919B2
公开(公告)日：2014-05-27
申请号：US13304414
申请日：2011-11-25
申请人： Po-Min Tu , Shih-Cheng Huang
发明人： Po-Min Tu , Shih-Cheng Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/32
摘要： A group III-nitride based semiconductor LED includes a sapphire substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer grown sequentially on the sapphire substrate. An n-type strain lattice structure is arranged between the n-type semiconductor layer and the active layer. A lattice constant of the n-type strain lattice structure exceeds that of the active layer, and is less than that of the n-type semiconductor layer.
摘要翻译： III族氮化物基半导体LED包括在蓝宝石衬底上顺序生长的蓝宝石衬底，n型半导体层，有源层和p型半导体层。在n型半导体层和有源层之间配置n型应变格子结构。 n型应变格子结构的晶格常数超过有源层的晶格常数，并且小于n型半导体层的晶格常数。

3. 发明授权

US08581283B2 Photoelectric device having group III nitride semiconductor 有权
标题翻译：具有III族氮化物半导体的光电器件
公开(公告)号：US08581283B2
公开(公告)日：2013-11-12
申请号：US13015590
申请日：2011-01-28
申请人： Po-Min Tu , Shih-Cheng Huang , Wen-Yu Lin , Chih-Peng Hsu , Shih-Hsiung Chan
发明人： Po-Min Tu , Shih-Cheng Huang , Wen-Yu Lin , Chih-Peng Hsu , Shih-Hsiung Chan
IPC分类号： H01L33/10
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.
摘要翻译：具有III族氮化物半导体的光电器件包括导电层，位于导电层上的金属镜层和位于金属镜面层上的III族氮化物半导体层。 III族氮化物半导体层在其上限定了许多微结构。每个微结构包括至少一个成角度的面，并且每个微结构的倾斜面是III族氮化物半导体层的晶体面。

4. 发明授权

US08349742B2 Gallium nitride-based semiconductor device and method for manufacturing the same 失效
标题翻译：氮化镓基半导体器件及其制造方法
公开(公告)号：US08349742B2
公开(公告)日：2013-01-08
申请号：US13013825
申请日：2011-01-26
申请人： Po-Min Tu , Shih-Cheng Huang , Shun-Kuei Yang , Chia-Hung Huang
发明人： Po-Min Tu , Shih-Cheng Huang , Shun-Kuei Yang , Chia-Hung Huang
IPC分类号： H01L21/00
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/0243 , H01L21/0254 , H01L21/02658 , H01L29/16
摘要： A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.
摘要翻译：氮化镓系半导体器件包括复合衬底和氮化镓层。复合衬底包括硅衬底和填料。硅衬底包括第一表面和与第一表面相对的第二表面，并且第一表面在其中限定多个凹槽。将填料填充到硅衬底的第一表面上的槽数中。填料的热膨胀系数大于硅衬底的热膨胀系数。氮化镓层形成在硅衬底的第二表面上。

5. 发明授权

US08866161B2 Light-emitting semiconductor device having sub-structures for reducing defects of dislocation therein 有权
标题翻译：具有用于减少其位错缺陷的子结构的发光半导体器件
公开(公告)号：US08866161B2
公开(公告)日：2014-10-21
申请号：US13314186
申请日：2011-12-08
申请人： Shih-Cheng Huang , Po-Min Tu , Ying-Chao Yeh , Wen-Yu Lin , Peng-Yi Wu , Shih-Hsiung Chan
发明人： Shih-Cheng Huang , Po-Min Tu , Ying-Chao Yeh , Wen-Yu Lin , Peng-Yi Wu , Shih-Hsiung Chan
IPC分类号： H01L29/06 , H01L27/15 , H01L21/02 , H01L33/00 , H01S5/323
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02505 , H01L21/02656 , H01L33/007 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.
摘要翻译：半导体器件的结构包括第一半导体层; 在所述第一半导体层的表面上的中间层; 在所述中间层上的第二半导体层，其中所述中间层和所述第二半导体层被集成到一组子结构中; 以及在所述第二半导体层上的半导体发光器件。

6. 发明授权

US08754438B2 Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US08754438B2
公开(公告)日：2014-06-17
申请号：US13400097
申请日：2012-02-19
申请人： Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
发明人： Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
IPC分类号： H01L33/62
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/145 , H01L33/38 , H01L33/382
摘要： An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.
摘要翻译： LED包括衬底，缓冲层，外延层和导电层。外延层包括第一N型外延层，第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。第一和第二N型外延层经由图案化的沟槽彼此接触。因此，LED具有均匀的电流分布和更大的发光面积。还提供了一种用于LED的制造方法。

7. 发明授权

US08604503B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08604503B2
公开(公告)日：2013-12-10
申请号：US13600137
申请日：2012-08-30
申请人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Ya-Wen Lin , Shun-Kuei Yang
发明人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Ya-Wen Lin , Shun-Kuei Yang
IPC分类号： H01L33/22
CPC分类号： H01L33/58 , H01L33/10 , H01L33/22 , H01L33/32
摘要： A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.
摘要翻译：发光二极管包括衬底，衬底上的过渡层和过渡层上的外延层。过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

8. 发明授权

US08232122B2 Method for fabricating light emitting diode chip 失效
标题翻译：制造发光二极管芯片的方法
公开(公告)号：US08232122B2
公开(公告)日：2012-07-31
申请号：US13207439
申请日：2011-08-11
申请人： Po-Min Tu , Shih-Cheng Huang
发明人： Po-Min Tu , Shih-Cheng Huang
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0095 , Y10S438/945
摘要： A method for fabricating an LED chip is provided. Firstly, a SiO2 pattern layer is formed on a top surface of a substrate. Then, lighting structures are grown on a portion of the top surface of substrate without the SiO2 pattern layer thereon. Thereafter, the SiO2 pattern layer is removed by wet etching to form spaces between bottoms of the lighting structures and substrate. An etching solution is used to permeate into the spaces and etch the lighting structures from the bottoms thereof, whereby the lighting structures each with a trapezoid shape is formed. Sidewalls of each of the lighting structures are inclined inwardly along a top-to-bottom direction.
摘要翻译：提供一种制造LED芯片的方法。首先，在基板的上表面上形成SiO 2图形层。然后，在衬底的顶表面的一部分上生长照明结构，而不在其上形成SiO 2图案层。此后，通过湿蚀刻去除SiO 2图案层，以在照明结构和基板的底部之间形成空间。使用蚀刻溶液渗透到空间中并从其底部蚀刻照明结构，由此形成各自具有梯形形状的照明结构。每个照明结构的侧壁沿着顶部到底部的方向向内倾斜。

9. 发明授权

US08536590B2 Light emitting element package 失效
标题翻译：发光元件封装
公开(公告)号：US08536590B2
公开(公告)日：2013-09-17
申请号：US13113082
申请日：2011-05-23
申请人： Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Chia-Hung Huang
发明人： Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Chia-Hung Huang
IPC分类号： H01L29/18
CPC分类号： H01L25/0753 , H01L33/62 , H01L2224/16
摘要： A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate.
摘要翻译：发光元件封装包括衬底，至少两个发光元件模块和封装构件。基板包括电路层。电路层包括多个焊盘。至少两个发光元件模块安装在基板上。所述至少两个发光元件模块中的每一个包括多个发光元件。所述至少两个发光元件模块的每个发光元件通过所述焊盘电连接到相邻的发光元件。至少两个发光元件模块相反地布置。封装构件被构造成将至少两个发光元件模块封装在基板上。

10. 发明授权

US08519419B2 Semiconductor light-emitting structure having low thermal stress 失效
标题翻译：具有低热应力的半导体发光结构
公开(公告)号：US08519419B2
公开(公告)日：2013-08-27
申请号：US13171472
申请日：2011-06-29
申请人： Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Chia-Hung Huang
发明人： Shih-Cheng Huang , Po-Min Tu , Shun-Kuei Yang , Chia-Hung Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/12 , H01L33/382 , H01L33/46
摘要： A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.
摘要翻译：半导体发光结构包括硅衬底，分布式布拉格反射器，半导体结构层和外延连接层。硅衬底具有顶表面。分布式布拉格反射器形成在硅衬底的顶表面上。半导体结构层被配置为发光。外延连接层放置在分布式布拉格反射器和半导体结构层之间。沟槽从半导体结构层延伸穿过外延连接层和分布式布拉格反射器到达半导体结构层。

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