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1. 发明授权

US07658623B2 Electronic apparatus with a pin mount 有权
标题翻译：电子设备带有针脚安装
公开(公告)号：US07658623B2
公开(公告)日：2010-02-09
申请号：US12254329
申请日：2008-10-20
申请人： Po-Sheng Lee
发明人： Po-Sheng Lee
IPC分类号： H01R12/00
CPC分类号： H05K3/301 , H05K2201/10015 , H05K2201/10424 , H05K2201/10462 , H05K2201/10583 , H05K2201/10606
摘要： An electronic apparatus has an electronic component and a pin mount. The electronic component has a working surface and two pins protruding from the working surface and each pin being bent to form an L-shape with a proximal part and a distal part. The pin mount has a flat bottom, a rear, two through holes and two communicating recesses. The through holes are defined through the pin mount in parallel, are formed from the front to the rear and receiving the proximal parts of the pins. The communicating recesses are formed in parallel in the front from the through holes toward the bottom of the pin mount, communicate respectively with the through holes and receiving the distal parts of the pins. The pin mount immobilizes the electronic component to prevent the pins from being detached from the electronic component or the PCB to retain the lifetime of the pins.
摘要翻译：电子设备具有电子部件和销安装件。电子部件具有工作面和从工作面突出的两个销，每个销弯曲形成具有近端部分和远端部分的L形。销安装座有一个平底，一个后部，两个通孔和两个连通的凹槽。通孔平行地通过销安装件形成，从前到后形成并容纳销的近端部分。连通凹部从前面的通孔朝向销安装座的底部平行地形成，分别与通孔连通并且接收销的远端部分。引脚安装件固定电子部件，以防止引脚与电子部件或PCB分离，以保持引脚的寿命。

2. 发明授权

US07733647B2 Waterproof casing for a power supply 有权
标题翻译：电源防水套管
公开(公告)号：US07733647B2
公开(公告)日：2010-06-08
申请号：US12047009
申请日：2008-03-12
申请人： Po-Sheng Lee
发明人： Po-Sheng Lee
IPC分类号： H05K7/20
CPC分类号： H05K7/20909 , H05K5/0213 , H05K7/1432
摘要： A waterproof casing for a power supply has a lower casing, an upper casing, an inlet cover and an outlet cover. The lower cover contains electronic components. The upper casing is mounted on the opening of the lower casing and has an inlet cavity, at least one inlet, an outlet cavity and at least one outlet. The at least one inlet and outlet are formed through the upper casing and respectively communicate with the inlet cavity and outlet cavity. The inlet cover and outlet cover respectively seal the inlet cavity and the outlet cavity, communicate the inlet cavity and the outlet cavity with the lower casing to allow the air to flow inside the casing and to keep the water from flowing in the inlet cavity and the outlet cavity. Structure of the waterproof casing is simplified, so benefits manufacturing.
摘要翻译：用于电源的防水壳体具有下壳体，上壳体，入口盖和出口盖。下盖包含电子元件。上壳体安装在下壳体的开口上，并且具有入口腔，至少一个入口，出口腔和至少一个出口。至少一个入口和出口通过上壳体形成并分别与入口腔和出口腔连通。入口盖和出口盖分别密封入口腔和出口腔，将入口腔和出口腔与下壳体连通，以允许空气在壳体内流动并保持水不在入口腔中流动，出口腔。防水外壳的结构简化，使制造有利。

3. 发明申请

US20090194455A1 WATERPROOF CASING FOR A POWER SUPPLY 有权
标题翻译：防水防水电源
公开(公告)号：US20090194455A1
公开(公告)日：2009-08-06
申请号：US12047009
申请日：2008-03-12
申请人： Po-Sheng Lee
发明人： Po-Sheng Lee
IPC分类号： B65D85/00
CPC分类号： H05K7/20909 , H05K5/0213 , H05K7/1432
摘要： A waterproof casing for a power supply has a lower casing, an upper casing, an inlet cover and an outlet cover. The lower cover contains electronic components. The upper casing is mounted on the opening of the lower casing and has an inlet cavity, at least one inlet, an outlet cavity and at least one outlet. The at least one inlet and outlet are formed through the upper casing and respectively communicate with the inlet cavity and outlet cavity. The inlet cover and outlet cover respectively seal the inlet cavity and the outlet cavity, communicate the inlet cavity and the outlet cavity with the lower casing to allow the air to flow inside the casing and to keep the water from flowing in the inlet cavity and the outlet cavity. Structure of the waterproof casing is simplified, so benefits manufacturing.
摘要翻译：用于电源的防水壳体具有下壳体，上壳体，入口盖和出口盖。下盖包含电子元件。上壳体安装在下壳体的开口上，并且具有入口腔，至少一个入口，出口腔和至少一个出口。至少一个入口和出口通过上壳体形成并分别与入口腔和出口腔连通。入口盖和出口盖分别密封入口腔和出口腔，将入口腔和出口腔与下壳体连通，以允许空气在壳体内流动并保持水不在入口腔中流动，出口腔。防水外壳的结构简化，使制造有利。

4. 发明授权

US07494350B1 Electrical device with a retractable plug 失效
标题翻译：带可伸缩插头的电器
公开(公告)号：US07494350B1
公开(公告)日：2009-02-24
申请号：US12018625
申请日：2008-01-23
申请人： Po-Sheng Lee
发明人： Po-Sheng Lee
IPC分类号： H01R13/44
CPC分类号： H01R24/68 , H01R2103/00
摘要： An electrical device with a retractable plug has a body and a plug-moving assembly. The body has a chamber, a partition and a plug. The partition is formed in the chamber, separates the chamber into a plug chamber and an electronics chamber. The plug chamber has a longitudinal sidewall, a slot and an opening. The longitudinal sidewall is disposed parallelly with the partition and has an inner surface. The slot is formed through the longitudinal sidewall. The opening is formed through the end wall. The plug-moving assembly is mounted in the plug chamber and connects to the plug to selectively retract the plug into the plug chamber. Therefore, the plug of the electrical device may be selectively retracted to prevent prong damage, improve safety and aesthetics of design.
摘要翻译：具有可伸缩插头的电气装置具有主体和插头移动组件。身体有一个房间，一个隔板和一个插头。分隔件形成在腔室中，将腔室分离成塞子室和电子室。插塞室具有纵向侧壁，槽和开口。纵向侧壁与隔板平行设置并具有内表面。槽通过纵向侧壁形成。开口通过端壁形成。插头移动组件安装在插塞室中并连接到插头以选择性地将插头缩回到插塞室中。因此，电气设备的插头可以选择性地缩回以防止插脚损坏，提高设计的安全性和美观性。

5. 发明申请

US20080203057A1 WET CLEANING PROCESS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：湿式清洗方法和使用该方法制造半导体器件的方法
公开(公告)号：US20080203057A1
公开(公告)日：2008-08-28
申请号：US11679677
申请日：2007-02-27
申请人： Chien-En Hsu , Chih-Nan Liang , Po-Sheng Lee
发明人： Chien-En Hsu , Chih-Nan Liang , Po-Sheng Lee
IPC分类号： B44C1/22
CPC分类号： H01L21/67057 , H01L21/02063 , H01L21/02071 , H01L21/76807
摘要： A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO2, and then draining the water containing CO2 to expose the substrate in an atmosphere of CO2. The second rinse step includes rinsing the substrate using deionized water containing CO2.
摘要翻译：提供湿式清洗方法。湿式清洗方法包括至少一个第一漂洗过程和第二冲洗步骤。第一冲洗步骤包括使用含有CO 2的去离子水冲洗底物，然后排出含有CO 2的水，以在CO 2气氛中曝光底物。第二冲洗步骤包括使用含有CO 2的去离子水漂洗底物。

6. 发明授权

US08772655B2 Receptacle structure and power adapter with the same 有权
标题翻译：插座结构和电源适配器相同
公开(公告)号：US08772655B2
公开(公告)日：2014-07-08
申请号：US13592551
申请日：2012-08-23
申请人： Po-Sheng Lee
发明人： Po-Sheng Lee
IPC分类号： H01R33/96
CPC分类号： H01R13/7032 , H01R2103/00
摘要： The receptacle includes an insulated body, a pair of pins and a micro switch. The insulated body has a recess. The pair of pins is fixed in the insulated body and located in the recess. The pair of pins includes a first pin and a second pin. The second pin electrically connects a wire. Each of the first and second pins has a free end. The recess is divided into an inner region and an outer region by the two free ends. The micro switch is movably connected in the insulated body and disposed correspondingly to the wire. The micro switch has a contact sheet which can selectively be in contact with the wire. The micro switch is located in the inner region of the recess.
摘要翻译：插座包括绝缘体，一对针和微动开关。绝缘体具有凹部。一对销固定在绝缘体中并位于凹槽中。该对引脚包括第一引脚和第二引脚。第二个引脚将电线电连接。第一和第二销中的每一个具有自由端。凹部通过两个自由端分成内部区域和外部区域。微型开关在绝缘体中可移动地连接并相对于导线布置。微型开关具有能够选择性地与导线接触的接触片。微型开关位于凹槽的内部区域。

7. 发明授权

US07732346B2 Wet cleaning process and method for fabricating semiconductor device using the same 有权
标题翻译：湿式清洗方法及使用其制造半导体器件的方法
公开(公告)号：US07732346B2
公开(公告)日：2010-06-08
申请号：US11679677
申请日：2007-02-27
申请人： Chien-En Hsu , Chih-Nan Liang , Po-Sheng Lee
发明人： Chien-En Hsu , Chih-Nan Liang , Po-Sheng Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/67057 , H01L21/02063 , H01L21/02071 , H01L21/76807
摘要： A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO2, and then draining the water containing CO2 to expose the substrate in an atmosphere of CO2. The second rinse step includes rinsing the substrate using deionized water containing CO2.
摘要翻译：提供湿式清洗方法。湿式清洗方法包括至少一个第一漂洗过程和第二冲洗步骤。第一冲洗步骤包括使用含有CO 2的去离子水漂洗底物，然后排出含CO 2的水以在CO 2气氛中暴露底物。第二冲洗步骤包括使用含有CO 2的去离子水冲洗底物。

8. 发明授权

US08071440B2 Method of fabricating a dynamic random access memory 有权
标题翻译：制造动态随机存取存储器的方法
公开(公告)号：US08071440B2
公开(公告)日：2011-12-06
申请号：US12325847
申请日：2008-12-01
申请人： Po-Sheng Lee , Yu-Hsien Lin , Wen-Fang Lee
发明人： Po-Sheng Lee , Yu-Hsien Lin , Wen-Fang Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/105 , H01L27/10808 , H01L27/10894 , H01L27/10897
摘要： A method of fabricating a dynamic random access memory is provided. First, a substrate at least having a memory device area and a peripheral device area is provided, wherein an isolation structure and a capacitor are formed in the substrate of the memory device area, and an isolation structure and a well are formed in the substrate of the peripheral device area. A first oxide layer is formed on the substrate of the peripheral device area, and a passing gate isolation structure is formed on the substrate of the memory device area at the same time. A second oxide layer is formed on the substrate of the memory device area. And a first transistor is formed on the substrate of the memory device area, a passing gate is formed on the passing gate isolation structure, and a second transistor is formed on the substrate of the peripheral device area.
摘要翻译：提供一种制造动态随机存取存储器的方法。首先，提供至少具有存储器件区域和外围器件区域的衬底，其中在存储器件区域的衬底中形成隔离结构和电容器，并且在衬底中形成隔离结构和阱外围设备区域。在外围设备区域的基板上形成第一氧化物层，同时在存储器件区域的基板上形成通过栅极隔离结构。在存储器件区域的衬底上形成第二氧化物层。并且在存储器件区域的衬底上形成第一晶体管，在通过栅极隔离结构上形成通过栅极，并且在外围器件区域的衬底上形成第二晶体管。

9. 发明申请

US20100136759A1 METHOD OF FABRICATING A DYNAMIC RANDOM ACCESS MEMORY 有权
标题翻译：制造动态随机存取存储器的方法
公开(公告)号：US20100136759A1
公开(公告)日：2010-06-03
申请号：US12325847
申请日：2008-12-01
申请人： Po-Sheng Lee , Yu-Hsien Lin , Wen-Fang Lee
发明人： Po-Sheng Lee , Yu-Hsien Lin , Wen-Fang Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/105 , H01L27/10808 , H01L27/10894 , H01L27/10897
摘要： A method of fabricating a dynamic random access memory is provided. First, a substrate at least having a memory device area and a peripheral device area is provided, wherein an isolation structure and a capacitor are formed in the substrate of the memory device area, and an isolation structure and a well are formed in the substrate of the peripheral device area. A first oxide layer is formed on the substrate of the peripheral device area, and a passing gate isolation structure is formed on the substrate of the memory device area at the same time. A second oxide layer is formed on the substrate of the memory device area. And a first transistor is formed on the substrate of the memory device area, a passing gate is formed on the passing gate isolation structure, and a second transistor is formed on the substrate of the peripheral device area.
摘要翻译：提供一种制造动态随机存取存储器的方法。首先，提供至少具有存储器件区域和外围器件区域的衬底，其中在存储器件区域的衬底中形成隔离结构和电容器，并且在衬底中形成隔离结构和阱外围设备区域。在外围设备区域的基板上形成第一氧化物层，同时在存储器件区域的基板上形成通过栅极隔离结构。在存储器件区域的衬底上形成第二氧化物层。并且在存储器件区域的衬底上形成第一晶体管，在通过栅极隔离结构上形成通过栅极，并且在外围器件区域的衬底上形成第二晶体管。

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