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    • 3. 发明申请
    • DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS & METHOD
    • 包括半导体纳米晶体和方法的器件
    • US20140054540A1
    • 2014-02-27
    • US13900272
    • 2013-05-22
    • QD Vision, Inc.
    • Zhaoqun ZhouPeter T. KazlasMarshall Cox
    • H01L29/06H01L33/06H01L33/00H01L31/0352H01L21/02H01L31/18
    • H01L29/0665H01L21/02601H01L31/035209H01L31/035218H01L31/18H01L33/005H01L33/06H01L51/0036H01L51/0037H01L51/426H01L2251/308Y02E10/549Y02P70/521
    • A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode to form a metal oxide, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrystals. A device comprises a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode, and a first layer capable of transporting charge disposed between the layer comprising semiconductor nanocrystals one of the electrodes, wherein the first layer capable of transporting charge comprises a metal layer wherein at least the surface of the metal layer facing the layer comprising semiconductor nanocrystals is oxidized prior to disposing semiconductor nanocrystals thereover.
    • 制造包含半导体纳米晶体的器件的方法包括形成能够在第一电极上传输电荷的第一层,其中形成第一层包括在第一电极上设置金属层,并至少将金属层的表面氧化成与第一电极相对的第一层 电极以形成金属氧化物,在氧化的金属表面上设置包含半导体纳米晶体的层,以及在包含半导体纳米晶体的层上设置第二电极。 一种器件包括设置在第一电极和第二电极之间的包含半导体纳米晶体的层,以及能够传输设置在包括半导体纳米晶体的层之间的电荷的第一层,其中电极的一个电极包括金属层 其中至少在面向包含半导体纳米晶体的层的金属层的表面在其上设置半导体纳米晶体之前被氧化。
    • 8. 发明授权
    • Quantum dot light enhancement substrate
    • 量子点光增强基板
    • US08759850B2
    • 2014-06-24
    • US13849700
    • 2013-03-25
    • QD Vision, Inc.
    • Seth Coe-SullivanPeter T. Kazlas
    • H01L29/20H01L33/00H01L31/00
    • H01L33/06H01L27/322H01L31/035218H01L33/04H01L33/42H01L33/50H01L33/507H01L33/58H01L33/60H01L51/5036H01L51/5088H01L51/5268H01L51/56H01L2251/5369H05B33/145Y10S977/774
    • A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein.
    • 包括衬底的组件,包括包括设置在衬底上的量子点的颜色转换材料的至少一个层以及包括设置在所述至少一层上的导电材料(例如,氧化铟锡)的层。 (这种组件的实施例在本文中也称为QD光增强基板(QD-LES)。)在某些优选实施例中,基板对光是透明的,例如可见光,紫外光和/或红外辐射 。 在某些实施方案中,基底是柔性的。 在某些实施例中,衬底包括外耦合元件(例如,微透镜阵列)。 还提供了包括包括量子点和导电材料的颜色转换材料的膜。 在某些实施方案中,组分包括本文所述的膜。 还提供照明设备。 在某些实施例中,照明装置包括本文所述的膜。 在某些实施例中,照明装置包括本文所述的部件。
    • 9. 发明申请
    • Quantum Dot Light Enhancement Substrate And Lighting Device Including Same
    • 量子点光增强基板和包括其的照明设备
    • US20150014625A1
    • 2015-01-15
    • US14311542
    • 2014-06-23
    • QD Vision, Inc.
    • Seth Coe-SullivanPeter T. Kazlas
    • H01L33/04H01L33/58H01L33/42H01L33/60H01L33/50
    • H01L33/06H01L27/322H01L31/035218H01L33/04H01L33/42H01L33/50H01L33/507H01L33/58H01L33/60H01L51/5036H01L51/5088H01L51/5268H01L51/56H01L2251/5369H05B33/145Y10S977/774
    • A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein.
    • 包括衬底的组件,包括设置在衬底上的包括量子点的颜色转换材料的至少一个层以及设置在至少一个层上的导电材料(例如,氧化铟锡)的层。 (这种组件的实施例在本文中也称为QD光增强基板(QD-LES)。)在某些优选实施例中,基板对光是透明的,例如可见光,紫外光和/或红外辐射 。 在某些实施方案中,基底是柔性的。 在某些实施例中,衬底包括外耦合元件(例如,微透镜阵列)。 还提供了包括包括量子点和导电材料的颜色转换材料的膜。 在某些实施方案中,组分包括本文所述的膜。 还提供照明设备。 在某些实施例中,照明装置包括本文所述的膜。 在某些实施例中,照明装置包括本文所述的部件。