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1. 发明授权

US09755172B2 Device including quantum dots 有权
公开(公告)号：US09755172B2
公开(公告)日：2017-09-05
申请号：US15356563
申请日：2016-11-19
申请人： QD VISION, INC.
发明人： Peter T. Kazlas , Zhaoqun Zhou , Yuhua Niu , Sang-Jin Kim , Benjamin S. Mashford
IPC分类号： H01L51/50 , H01L51/52 , H01L51/56
CPC分类号： H01L51/502 , B82Y20/00 , H01L51/50 , H01L51/5004 , H01L51/5048 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5221 , H01L51/56 , H01L2251/301 , H01L2251/303 , H01L2251/5369 , H01L2251/552 , H01L2251/556
摘要： A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.

2. 发明申请

US20140054540A1 DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS & METHOD 审中-公开
标题翻译：包括半导体纳米晶体和方法的器件
公开(公告)号：US20140054540A1
公开(公告)日：2014-02-27
申请号：US13900272
申请日：2013-05-22
申请人： QD Vision, Inc.
发明人： Zhaoqun Zhou , Peter T. Kazlas , Marshall Cox
IPC分类号： H01L29/06 , H01L33/06 , H01L33/00 , H01L31/0352 , H01L21/02 , H01L31/18
CPC分类号： H01L29/0665 , H01L21/02601 , H01L31/035209 , H01L31/035218 , H01L31/18 , H01L33/005 , H01L33/06 , H01L51/0036 , H01L51/0037 , H01L51/426 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode to form a metal oxide, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrystals. A device comprises a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode, and a first layer capable of transporting charge disposed between the layer comprising semiconductor nanocrystals one of the electrodes, wherein the first layer capable of transporting charge comprises a metal layer wherein at least the surface of the metal layer facing the layer comprising semiconductor nanocrystals is oxidized prior to disposing semiconductor nanocrystals thereover.
摘要翻译：制造包含半导体纳米晶体的器件的方法包括形成能够在第一电极上传输电荷的第一层，其中形成第一层包括在第一电极上设置金属层，并至少将金属层的表面氧化成与第一电极相对的第一层电极以形成金属氧化物，在氧化的金属表面上设置包含半导体纳米晶体的层，以及在包含半导体纳米晶体的层上设置第二电极。一种器件包括设置在第一电极和第二电极之间的包含半导体纳米晶体的层，以及能够传输设置在包括半导体纳米晶体的层之间的电荷的第一层，其中电极的一个电极包括金属层其中至少在面向包含半导体纳米晶体的层的金属层的表面在其上设置半导体纳米晶体之前被氧化。

3. 发明申请

US20140027713A1 DEVICE INCLUDING QUANTUM DOTS 审中-公开
标题翻译：包括量子的设备
公开(公告)号：US20140027713A1
公开(公告)日：2014-01-30
申请号：US14042074
申请日：2013-09-30
申请人： QD Vision, Inc.
发明人： Marshall Cox , Craig Breen , Zhaoqun Zhou , Jonathan S. Steckel
IPC分类号： H01L33/04 , H01L33/00
CPC分类号： H01L33/04 , H01L21/02439 , H01L21/02491 , H01L21/02502 , H01L21/02521 , H01L21/0256 , H01L21/02601 , H01L33/005 , H01L33/0087 , H01L33/06 , H01L33/28 , H01L33/30 , H01L51/502
摘要： A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).
摘要翻译：一种制造器件的方法，所述方法包括：在第一电极上沉积包含量子点的层，所述量子点包括附着于其外表面的配体; 处理包含量子点的沉积层的表面以除去暴露的配体; 并在其上形成器件层。还公开了根据所公开的方法制造的装置。本发明的另一方面涉及一种包括第一电极和第二电极的装置，以及在两个电极之间包含量子点的层，该层包括从分散体沉积的量子点，所述分散体在形成之后已被处理以除去暴露的配体设备中的层。本发明的另一方面涉及一种包括第一电极和第二电极的装置，包括设置在第一和第二电极之间的第一无机半导体材料的层和设置在第一和第二电极之间的多个量子点，外部包括第二无机半导体材料的量子点的表面，其中第一无机半导体材料和第二无机半导体材料的组成相同（不考虑量子点的外表面上的任何配体）。

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