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1. 发明申请

US20090101924A1 Gallium nitride semiconductor device on SOI and process for making same 失效
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：US20090101924A1
公开(公告)日：2009-04-23
申请号：US11975289
申请日：2007-10-18
申请人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
发明人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

2. 发明申请

US20120252191A1 GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME 审中-公开
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：US20120252191A1
公开(公告)日：2012-10-04
申请号：US13494110
申请日：2012-06-12
申请人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
发明人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

3. 发明授权

US08217498B2 Gallium nitride semiconductor device on SOI and process for making same 失效
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：US08217498B2
公开(公告)日：2012-07-10
申请号：US11975289
申请日：2007-10-18
申请人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
发明人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
IPC分类号： H01L21/36
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

4. 发明授权

US07983317B2 MQW laser structure comprising plural MQW regions 有权
标题翻译： MQW激光器结构包括多个MQW区域
公开(公告)号：US07983317B2
公开(公告)日：2011-07-19
申请号：US12336050
申请日：2008-12-16
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01S5/00
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/041 , H01S5/20 , H01S5/2004 , H01S5/34333
摘要： Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
摘要翻译：提供了包括有源和/或无源MQW区域的多量子阱激光器结构。每个MQW区域包括多个量子阱和中间势垒层。相邻的MQW区域被间隔层隔开，该隔离层比中间的阻挡层厚。量子阱的带隙低于中间势垒层和间隔层的带隙。有源区可以包括有源和无源MQW，并且被配置用于电泵浦受激发射的光子，或者其可以包括配置用于光泵浦激发的光子发射的有源MQW区域。

5. 发明授权

US07965752B1 Native green laser semiconductor devices 有权
标题翻译：原生绿色激光半导体器件
公开(公告)号：US07965752B1
公开(公告)日：2011-06-21
申请号：US12627814
申请日：2009-11-30
申请人： Rajaram Bhat , Chad Stephen Gallinat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Chad Stephen Gallinat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/041 , H01S5/2201 , H01S5/305 , H01S5/3202
摘要： A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range.
摘要翻译：一种半导体激光器件，其可操作以发射具有所需波长的光在绿色光谱范围内。半导体激光器件可以包括泵浦源和包括衬底，第一覆层和一个或多个有源区域层的激光器结构。一个或多个有源区层包括多个量子阱，其具有在参考泵浦功率密度下大于约520nm的自发发射峰值波长。泵浦源被配置为以泵浦功率密度泵送每个量子阱，使得每个量子阱的受激发射峰值在绿色光谱范围内，并且一个或多个有源区域层内的量子阱的数量使得量子阱的净光学增益大于在绿色光谱范围内所需波长的净光学损耗系数。

6. 发明申请

US20110049469A1 Enhanced P-Contacts For Light Emitting Devices 审中-公开
标题翻译：用于发光设备的增强型P触点
公开(公告)号：US20110049469A1
公开(公告)日：2011-03-03
申请号：US12553288
申请日：2009-09-03
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Jingqun Xi , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Jingqun Xi , Chung-En Zah
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/32 , H01L33/40
摘要： An optoelectronic light emitting semiconductor device is provided comprising an active region, a p-type Group III nitride layer, an n-type Group III nitride layer, a p-side metal contact layer, an n-side metal contact layer, and an undoped tunneling enhancement layer. The p-side metal contact layer is characterized by a work function W satisfying the following relation: W≦e−AFF±0.025 eV where e−AFF is the electron affinity of the undoped tunneling enhancement layer. The undoped tunneling enhancement layer and the p-type Group III nitride layer comprise conduction and valence energy bands. The top of the valence band V1 of the undoped tunneling enhancement layer is above the top of the valence band V2 of the p-type Group III nitride layer at the band offset interface to generate a capacity for a relatively high concentration of holes in the undoped tunneling enhancement layer at the band offset interface. Additional embodiments are disclosed and claimed.
摘要翻译：提供了一种光电子发光半导体器件，其包括有源区，p型III族氮化物层，n型III族氮化物层，p侧金属接触层，n侧金属接触层和未掺杂的隧道增强层。 p侧金属接触层的特征在于满足以下关系的功函数W：W＆nlE; e-AFF±0.025eV其中e-AFF是未掺杂的隧道增强层的电子亲和力。未掺杂的隧道增强层和p型III族氮化物层包括导电和价态能带。未掺杂的隧道增强层的价带V1的顶部在带偏移界面处高于p型III族氮化物层的价带V2的顶部，以产生未掺杂的较高浓度的孔的能力隧道增强层在带偏移接口。公开并要求保护附加实施例。

7. 发明申请

US20100150193A1 MQW Laser Structure Comprising Plural MQW Regions 有权
标题翻译：包括多个MQW区域的MQW激光结构
公开(公告)号：US20100150193A1
公开(公告)日：2010-06-17
申请号：US12336050
申请日：2008-12-16
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01S5/30
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/041 , H01S5/20 , H01S5/2004 , H01S5/34333
摘要： Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
摘要翻译：提供了包括有源和/或无源MQW区域的多量子阱激光器结构。每个MQW区域包括多个量子阱和中间势垒层。相邻的MQW区域被间隔层隔开，该隔离层比中间的阻挡层厚。量子阱的带隙低于中间势垒层和间隔层的带隙。有源区可以包括有源和无源MQW，并且被配置用于电泵浦受激发射的光子，或者其可以包括配置用于光泵浦激发的光子发射的有源MQW区域。

8. 发明授权

US08121165B2 MQW laser structure comprising plural MQW regions 有权
标题翻译： MQW激光器结构包括多个MQW区域
公开(公告)号：US08121165B2
公开(公告)日：2012-02-21
申请号：US13161962
申请日：2011-06-16
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01S5/00
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/041 , H01S5/20 , H01S5/2004 , H01S5/34333
摘要： Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
摘要翻译：提供了包括有源和/或无源MQW区域的多量子阱激光器结构。每个MQW区域包括多个量子阱和中间势垒层。相邻的MQW区域被间隔层隔开，该隔离层比中间的阻挡层厚。量子阱的带隙低于中间势垒层和间隔层的带隙。有源区可以包括有源和无源MQW，并且被配置用于电泵浦受激发射的光子，或者其可以包括配置用于光泵浦激发的光子发射的有源MQW区域。

9. 发明申请

US20110128984A1 NATIVE GREEN LASER SEMICONDUCTOR DEVICES 有权
标题翻译：本色绿色激光半导体器件
公开(公告)号：US20110128984A1
公开(公告)日：2011-06-02
申请号：US12627814
申请日：2009-11-30
申请人： Rajaram Bhat , Chad Stephen Gallinat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Chad Stephen Gallinat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/041 , H01S5/2201 , H01S5/305 , H01S5/3202
摘要： A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range.
摘要翻译：一种半导体激光器件，其可操作以发射具有所需波长的光在绿色光谱范围内。半导体激光器件可以包括泵浦源和包括衬底，第一覆层和一个或多个有源区域层的激光器结构。一个或多个有源区层包括多个量子阱，其具有在参考泵浦功率密度下大于约520nm的自发发射峰值波长。泵浦源被配置为以泵浦功率密度泵送每个量子阱，使得每个量子阱的受激发射峰值在绿色光谱范围内，并且一个或多个有源区域层内的量子阱的数量使得量子阱的净光学增益大于在绿色光谱范围内所需波长的净光学损耗系数。

10. 发明申请

US20080299691A1 GaN lasers on ALN substrates and methods of fabrication 失效
标题翻译： ALN衬底上的GaN激光器和制造方法
公开(公告)号：US20080299691A1
公开(公告)日：2008-12-04
申请号：US11893188
申请日：2007-08-15
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01L21/02 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/183 , H01S5/3201 , H01S5/3216 , H01S2301/173
摘要： Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga(In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer where the substrate, the lattice adjustment layer, the lower cladding region, the active waveguiding region, the upper cladding region, and the N and P type contact regions of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.
摘要翻译：提出了Ga（In）N基激光器结构及相关的制造方法，其中以Al（N）或GaN衬底形成Ga（In）N基半导体激光器结构，以满足在半导体结构中避免不适当拉伸应变的需要。根据本发明的一个实施例，在设置有AlGaN晶格调整层的AlN或GaN衬底上设置Ga（In）N基半导体激光器，其中衬底，晶格调整层，下包层区域，有源波导区域，上覆层区域和激光器的N和P型接触区域形成半导体激光器中的组成连续体。公开并要求保护附加实施例。

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