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    • 6. 发明授权
    • Voltage regulation and latch-up protection circuits
    • 电压调节和闭锁保护电路
    • US5212616A
    • 1993-05-18
    • US781446
    • 1991-10-23
    • Sang H. DhongRobert L. Franch
    • Sang H. DhongRobert L. Franch
    • G05F1/56H01L27/08H01L27/092H03K19/00
    • H01L27/0921
    • An improved latch-up protection circuit is disclosed which prevents damage to a CMOS integrated circuit chip due to transient surges or internal-circuitry initiated latch-ups and which clears any latch-up condition or SCR mode. In each embodiment, the latch-up protection circuit is integrated with an on-chip voltage regulation circuit which provides on-chip power to the internal chip circuitry. A first approach to implementing the latch-up protection circuit is to detect an average current through the power transistor of the voltage regulation circuit over a few microseconds. Should the average current exceed a preset value, then the power transistor is turned off and the power (V.sub.DDI) supplied to the internal chip circuitry is reduced to zero, thereby removing the latch-up condition. In a second approach, the on-chip voltage (V.sub.DDI) supplied to internal chip circuitry is compared with a reference voltage signal representative of the occurrence of a latch-up condition, i.e., with the nominal external power supply. When the on-chip power supply voltage V.sub.DDI becomes lower than the trigger voltage, then the power transistor and voltage regulation circuit is disabled, thereby reducing the latch-up condition. Both CMOS and NMOS implementations of the combination voltage regulation and latch-up protection circuit are disclosed.
    • 公开了一种改进的闭锁保护电路,其防止由于瞬态浪涌或内部电路启动的闭锁而损坏CMOS集成电路芯片,并且其清除任何闩锁状态或SCR模式。 在每个实施例中,闩锁保护电路与片上电压调节电路集成,片上电压调节电路为内部芯片电路提供片上电源。 实现闩锁保护电路的第一种方法是在几微秒内检测通过电压调节电路的功率晶体管的平均电流。 如果平均电流超过预设值,则功率晶体管关闭,提供给内部芯片电路的功率(VDDI)减小到零,从而消除闩锁状态。 在第二种方法中,将提供给内部芯片电路的片上电压(VDDI)与表示闩锁状态的出现的参考电压信号进行比较,即使用额定外部电源。 当片上电源电压VDDI变得低于触发电压时,功率晶体管和电压调节电路被禁止,从而减少闭锁状态。 公开了组合电压调节和闭锁保护电路的CMOS和NMOS实现。