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    • 9. 发明授权
    • Method of making circuitized substrate with internal optical pathway using photolithography
    • 使用光刻法制造具有内部光学路径的电路化衬底的方法
    • US07713767B2
    • 2010-05-11
    • US11907004
    • 2007-10-09
    • Benson ChanHow T. LinRoy H. MagnusonVoya R. MarkovichMark D. Poliks
    • Benson ChanHow T. LinRoy H. MagnusonVoya R. MarkovichMark D. Poliks
    • H01L21/77H01L21/00G02B6/02G02B6/12G03G15/00
    • G02B6/43G02B6/132G02B6/136H05K1/0274
    • A method of making a circuitized substrate (e.g., PCB) including at least one and possibly several internal optical pathways as part thereof such that the resulting substrate will be capable of transmitting and/or receiving both electrical and optical signals. The method involves forming at least one opening between a side of the optical core and an adjacent upstanding member such that the opening is defined by at least one angular sidewall. Light passing through the optical core material (or into the core from above) is reflected off this angular sidewall. The medium (e.g., air) within the opening thus also serves as a reflecting medium due to its own reflective index in comparison to that of the adjacent optical core material. The method utilizes many processes used in conventional PCB manufacturing, thereby keeping costs to a minimum. The formed substrate is capable of being both optically and electrically coupled to one or more other substrates possessing similar capabilities, thereby forming an electro-optical assembly of such substrates.
    • 一种制造电路化衬底(例如PCB)的方法,其包括至少一个可能的几个内部光学路径作为其一部分,使得所得到的衬底将能够传输和/或接收电信号和光信号。 该方法包括在光学核心的一侧和相邻的直立构件之间形成至少一个开口,使得开口由至少一个角形侧壁限定。 通过光学芯材料(或从上方进入芯体)的光从该角形侧壁反射。 因此,开口内的介质(例如空气)由于其相对于相邻的光学芯材料的反射率而与反射介质一样起作用。 该方法利用了常规PCB制造中使用的许多工艺,从而将成本降至最低。 所形成的基底能够光学和电耦合到具有相似能力的一个或多个其它基底,从而形成这种基底的电光学组件。
    • 10. 发明授权
    • Conducting paste for device level interconnects
    • 用于器件级互连的导电膏
    • US08685284B2
    • 2014-04-01
    • US12884657
    • 2010-09-17
    • Rabindra N. DasRoy H. MagnusonMark D. PoliksVoya R. Markovich
    • Rabindra N. DasRoy H. MagnusonMark D. PoliksVoya R. Markovich
    • H01B1/00H01B1/22H01B1/02
    • H01B1/22H01L2224/81Y10T29/49117
    • A conducting paste and method of forming the paste for device level interconnection. The conducting paste contains metal loading in the range 80-95% that is useful for making five micron device level interconnects. The conducting paste is made by mixing two different conducting pastes, each paste maintaining its micro level individual rich region in the mixed paste even after final curing. One paste contains at least one low melting point alloy and the other paste contains noble metal fillers such as gold or silver flakes. In general, average flake size below five micron is suitable for five micron interconnects. However, 1 micron or smaller silver flakes and an LMP mixture is preferred for five micron interconnects. The amount of LMP based paste in the final mixture is preferably 20-50% by weight. The nano micro paste embodiment shows good electrical yield (81%) and low contact resistance.
    • 导电糊和形成用于器件级互连的糊的方法。 导电浆料含有80-95%范围内的金属负载,可用于制造五微米器件级互连。 通过混合两种不同的导电浆料制成导电糊料,即使在最终固化后,每个糊料仍将其微量级独立富含区域保持在混合糊料中。 一种糊状物含有至少一种低熔点合金,另一种糊状物含有贵金属填料如金或银薄片。 通常,小于5微米的平均片尺寸适用于五微米互连。 然而,对于5微米互连,优选1微米或更小的银薄片和LMP混合物。 最终混合物中基于LMP的糊剂的量优选为20-50重量%。 纳米微膏实施例显示良好的电收率(81%)和低接触电阻。