会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Method and structure of photovoltaic grid stacks by solution based processes
    • 基于解决方案的光伏电网堆栈的方法和结构
    • US08426236B2
    • 2013-04-23
    • US12775939
    • 2010-05-07
    • Cyril Cabral, Jr.Harold J. HovelXiaoyan Shao
    • Cyril Cabral, Jr.Harold J. HovelXiaoyan Shao
    • H01L21/00
    • H01L31/18H01L31/022425Y02E10/50
    • A grid stack structure of a solar cell, which includes a silicon substrate, wherein a front side of the silicon is doped with phosphorus to form a n-emitter and a back side of the silicon is screen printed with aluminum (Al) metallization; a dielectric layer, which acts as an antireflection coating (ARC), applied on the silicon; a mask layer applied on the front side to define a grid opening of the dielectric layer, wherein an etching method is applied to open an unmasked grid area; a light-induced plated nickel or cobalt layer applied to the front side with electrical contact to the back side Al metallization; a silicide layer formed by rapid thermal annealing of the plated nickel (Ni) or cobalt (Co); an optional barrier layer electrodeposited on the silicide; a copper (Cu) layer electrodeposited on the silicide/barrier film layer; and a thin protective layer is chemically applied or electrodeposited on top of the Cu layer.
    • 包括硅衬底的太阳能电池的栅格堆叠结构,其中硅的正面被磷掺杂以形成n发射极,硅的背面用铝(Al)金属化丝网印刷; 作为抗反射涂层(ARC)的介电层,施加在硅上; 施加在前侧的掩模层以限定电介质层的栅格开口,其中施加蚀刻方法以打开未屏蔽的栅格区域; 施加到前侧的光诱导的镀镍或钴层与后侧Al金属化电接触; 通过镀镍(Ni)或钴(Co)的快速热退火形成的硅化物层; 电沉积在硅化物上的可选阻挡层; 电沉积在硅化物/阻挡膜层上的铜(Cu)层; 并且将薄的保护层化学施加或电沉积在Cu层的顶部上。