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1. 发明申请

US20080296561A1 Memory Device and Semiconductor Device 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US20080296561A1
公开(公告)日：2008-12-04
申请号：US11791826
申请日：2005-12-01
申请人： Ryoji Nomura , Yasuko Watanabe , Yoshitaka Moriya
发明人： Ryoji Nomura , Yasuko Watanabe , Yoshitaka Moriya
IPC分类号： H01L51/00 , H01L27/10 , H01L21/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/04 , H01L27/101 , H01L27/285
摘要： The present invention provides a memory device which has a memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers. With this characteristic, a memory device which is involatile, easily manufactured, and additionally recordable can be provided. A memory device of the present invention has plural memory cells, plural bit lines extending in a first direction, and plural word lines extending in a second direction which is perpendicular to the first direction. Each of the plural memory cells has a memory element. The memory element comprises a first conductive layer forming the bit line, a second conductive layer forming the word line, and a composition layer to be hardened by an optical action. The composition layer is formed between a first conductive layer and a second conductive layer.
摘要翻译：本发明提供了一种存储器件，其具有其中组合物层夹在一对导电层之间的简单结构的存储元件。利用该特征，可以提供非易失性，易于制造和附加记录的存储装置。本发明的存储装置具有多个存储单元，沿第一方向延伸的多个位线，以及沿与第一方向垂直的第二方向延伸的多个字线。多个存储单元中的每一个具有存储元件。存储元件包括形成位线的第一导电层，形成字线的第二导电层和通过光学作用而被硬化的组合物层。组合物层形成在第一导电层和第二导电层之间。

2. 发明授权

US08314417B2 Memory device and semiconductor device 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US08314417B2
公开(公告)日：2012-11-20
申请号：US11791826
申请日：2005-12-01
申请人： Ryoji Nomura , Yasuko Watanabe , Yoshitaka Moriya
发明人： Ryoji Nomura , Yasuko Watanabe , Yoshitaka Moriya
IPC分类号： H01L29/08
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/04 , H01L27/101 , H01L27/285
摘要： The present invention provides a memory device which has a memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers. With this characteristic, a memory device which is involatile, easily manufactured, and additionally recordable can be provided. A memory device of the present invention has plural memory cells, plural bit lines extending in a first direction, and plural word lines extending in a second direction which is perpendicular to the first direction. Each of the plural memory cells has a memory element. The memory element comprises a first conductive layer forming the bit line, a second conductive layer forming the word line, and a composition layer to be hardened by an optical action. The composition layer is formed between a first conductive layer and a second conductive layer.
摘要翻译：本发明提供了一种存储器件，其具有其中组合物层夹在一对导电层之间的简单结构的存储元件。利用该特征，可以提供非易失性，易于制造和附加记录的存储装置。本发明的存储装置具有多个存储单元，沿第一方向延伸的多个位线，以及沿与第一方向垂直的第二方向延伸的多个字线。多个存储单元中的每一个具有存储元件。存储元件包括形成位线的第一导电层，形成字线的第二导电层和通过光学作用而被硬化的组合物层。组合物层形成在第一导电层和第二导电层之间。

3. 发明授权

US08227802B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08227802B2
公开(公告)日：2012-07-24
申请号：US12847352
申请日：2010-07-30
申请人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
发明人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
IPC分类号： H01L35/24
CPC分类号： H01L51/0579 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/112 , H01L27/115 , H01L51/0051 , H01L51/0059
摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.
摘要翻译：本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层，并且存储元件包括第一导电层，有机化合物和第二导电层。根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

4. 发明申请

US20080121874A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080121874A1
公开(公告)日：2008-05-29
申请号：US11793810
申请日：2006-01-20
申请人： Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
发明人： Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
IPC分类号： H01L51/10
CPC分类号： H01L27/1255 , H01L21/56 , H01L21/6835 , H01L21/6836 , H01L21/84 , H01L23/5227 , H01L24/83 , H01L27/105 , H01L27/12 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/68318 , H01L2221/68327 , H01L2221/68363 , H01L2224/73204 , H01L2224/81903 , H01L2224/8385 , H01L2224/83851 , H01L2224/9211 , H01L2924/00011 , H01L2924/01012 , H01L2924/01055 , H01L2924/01068 , H01L2924/01079 , H01L2924/12036 , H01L2924/12044 , H01L2924/14 , H01L2924/19041 , H01L2224/29075 , H01L2924/00
摘要： The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.
摘要翻译：本发明提供一种可以简化步骤的半导体器件，可以抑制制造成本，并且可以抑制产量的降低。本发明的半导体器件包括天线，存储元件和晶体管，其中用作天线的导电层设置在与晶体管或存储元件的导电层相同的层中。该特性使得可以省略形成用作天线的导电层的独立步骤，并且与形成另一元件的导电层的步骤同时进行形成用作天线的导电层的步骤。因此，能够简化制造工序，能够抑制制造成本，能够抑制成品率的降低。

5. 发明授权

US08295104B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08295104B2
公开(公告)日：2012-10-23
申请号：US12618161
申请日：2009-11-13
申请人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
发明人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
IPC分类号： G11C7/00
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

6. 发明授权

US07622736B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07622736B2
公开(公告)日：2009-11-24
申请号：US11579145
申请日：2005-12-01
申请人： Yoshitaka Moriya , Hiroko Abe , Mikio Yukawa , Ryoji Nomura
发明人： Yoshitaka Moriya , Hiroko Abe , Mikio Yukawa , Ryoji Nomura
IPC分类号： H01L23/58
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/22
摘要： It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
摘要翻译：本发明的目的是提供一种易于制造数据的易失性半导体器件及其制造方法。本发明的特征在于，半导体器件包括：元件形成层，其包括设置在基板上的第一晶体管和第二晶体管; 设置在所述元件形成层上的存储元件; 以及设置在所述存储元件上方的传感器部分，其中所述存储元件具有包括第一导电层和有机化合物层的层状结构以及第二导电层，所述第一导电层与所述第一晶体管电连接，传感器部分电连接到第二晶体管。

7. 发明授权

US07688624B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07688624B2
公开(公告)日：2010-03-30
申请号：US11547905
申请日：2005-11-22
申请人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
发明人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
IPC分类号： G11C11/34
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

8. 发明申请

US20070215869A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070215869A1
公开(公告)日：2007-09-20
申请号：US11579145
申请日：2005-12-01
申请人： Yoshitaka Moriya , Hiroko Abe , Mikio Yukawa , Ryoji Nomura
发明人： Yoshitaka Moriya , Hiroko Abe , Mikio Yukawa , Ryoji Nomura
IPC分类号： H01L29/08
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/22
摘要： It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
摘要翻译：本发明的目的是提供一种易于制造数据的易失性半导体器件及其制造方法。本发明的特征在于，半导体器件包括：元件形成层，其包括设置在基板上的第一晶体管和第二晶体管; 设置在所述元件形成层上的存储元件; 以及设置在所述存储元件上方的传感器部分，其中所述存储元件具有包括第一导电层和有机化合物层的层状结构以及第二导电层，所述第一导电层与所述第一晶体管电连接，传感器部分电连接到第二晶体管。

9. 发明授权

US08546790B2 Memory device and semiconductor device 有权
公开(公告)号：US08546790B2
公开(公告)日：2013-10-01
申请号：US11793810
申请日：2006-01-20
申请人： Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
发明人： Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
IPC分类号： H01L29/08
摘要： The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.

10. 发明授权

US07935958B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07935958B2
公开(公告)日：2011-05-03
申请号：US11547632
申请日：2005-10-18
申请人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
发明人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
IPC分类号： H01L29/08
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/00 , G11C17/14 , G11C17/143 , G11C17/16 , H01L27/285 , H01L51/0051 , H01L51/0059
摘要： The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.
摘要翻译：本发明提供一种半导体器件，其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。利用该特征，提供了具有非易失性，可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分，并且多个存储元件中的每一个是其中堆叠第一导电层，有机化合物层和第二导电层的元件为了。

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