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1. 发明申请

US20180277599A1 MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL 审中-公开
公开(公告)号：US20180277599A1
公开(公告)日：2018-09-27
申请号：US15918770
申请日：2018-03-12
申请人： Micron Technology, Inc.
发明人： Andrea Redaelli , Agostino Pirovano
IPC分类号： H01L27/24 , H01L45/00 , G11C13/00 , H01L27/28
CPC分类号： H01L27/2409 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C2213/72 , H01L27/2481 , H01L27/285 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/14 , H01L45/141 , H01L45/144 , H01L45/146 , H01L45/1608
摘要： Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

2. 发明授权

US09985076B2 Diode/superionic conductor/polymer memory structure 有权
公开(公告)号：US09985076B2
公开(公告)日：2018-05-29
申请号：US15478072
申请日：2017-04-03
申请人： Micron Technology, Inc.
发明人： Kristy A. Campbell
IPC分类号： H01L27/28 , H01L51/05 , H01L51/10
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0011 , G11C13/0014 , G11C13/0016 , G11C2213/72 , H01L27/2409 , H01L27/28 , H01L27/286 , H01L29/8615 , H01L45/1608 , H01L45/1683 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0041 , H01L51/0078 , H01L51/0591 , H01L51/102
摘要： A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.

3. 发明授权

US09559320B2 Ferro-electric device and modulatable injection barrier 有权
标题翻译：铁电设备和可调节注入屏障
公开(公告)号：US09559320B2
公开(公告)日：2017-01-31
申请号：US13232731
申请日：2011-09-14
申请人： Paulus Wilhelmus Maria Blom , Bert De Boer , Kamal Asadi
发明人： Paulus Wilhelmus Maria Blom , Bert De Boer , Kamal Asadi
IPC分类号： H01L51/10 , H01L51/05 , B82Y10/00 , G11C11/22 , H01L27/28
CPC分类号： H01L51/0575 , B82Y10/00 , G11C11/22 , H01L27/285 , H01L51/052 , H01L51/0591
摘要： Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.
摘要翻译：描述了可调节的注入阻挡层和包含该阻挡层的半导体元件。更具体地说，本发明涉及一种两端非易失性可编程电阻器。这种电阻器可以应用在非易失性存储器件中，并且作为有源开关，例如，在显示器。该装置包括在电极层之间的包含铁电材料和半导体材料的共混物的储存层。混合物中优选的两种材料都是聚合物。

4. 发明申请

US20160284869A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20160284869A1
公开(公告)日：2016-09-29
申请号：US15064760
申请日：2016-03-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： SHIGEKI HATTORI , MASAYA TERAI , HIDEYUKI NISHIZAWA , KOJI ASAKAWA
IPC分类号： H01L29/792 , H01L27/115 , H01L29/51
CPC分类号： H01L27/11582 , H01L27/281 , H01L27/285 , H01L51/0091 , H01L51/0092 , H01L51/052
摘要： A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1):
摘要翻译：要解决的问题：提供一种实现优异的电荷保持特性的半导体存储器件。解决方案：半导体存储器件包括半导体层，控制栅电极和有机分子层，其设置在半导体层和控制栅极之间并且包括由分子式（1）描述的分子结构。选定的图：无

5. 发明授权

US09437777B2 Semiconductor device with antenna and light-emitting element 有权
标题翻译：具有天线和发光元件的半导体器件
公开(公告)号：US09437777B2
公开(公告)日：2016-09-06
申请号：US14306559
申请日：2014-06-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tamae Takano , Nobuharu Ohsawa , Kiyoshi Kato
IPC分类号： H01L33/00 , H01L35/24 , H01L29/00 , H01L33/36 , H01L51/50 , H01L51/52 , H01L23/522 , H01L27/06 , H01L27/12 , H01L27/13 , H01Q1/22 , H01Q9/27 , H01L51/05 , H01L23/498 , H01L23/66 , H01F5/00
CPC分类号： H01L27/13 , G06K19/07784 , G11C7/062 , G11C7/22 , H01F5/003 , H01L23/49838 , H01L23/5227 , H01L23/66 , H01L27/0688 , H01L27/1203 , H01L27/1214 , H01L27/1255 , H01L27/285 , H01L33/36 , H01L51/05 , H01L51/0591 , H01L51/5012 , H01L51/5203 , H01L2223/6672 , H01L2223/6677 , H01L2251/5338 , H01L2924/0002 , H01L2924/12044 , H01Q1/2283 , H01Q1/36 , H01Q9/27 , Y10S257/922 , H01L2924/00
摘要： When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion and a coiled antenna portion are disposed by being stacked together; therefore, it is possible to prevent a current from flowing through a conductive layer occupying a large area included in the memory circuit portion, and thus, power saving can be achieved. In addition, the memory circuit portion and the coiled antenna portion are disposed by being stacked together, and thus, it is possible to use a space efficiently. Therefore, downsizing can be realized.
摘要翻译：当在螺旋天线部分中设置占据大面积的导电层时，难以稳定地供电。存储电路部分和螺旋天线部分通过堆叠在一起设置; 因此，可以防止电流流过占据存储电路部分中的大面积的导电层，从而可以实现省电。此外，存储电路部分和盘绕天线部分通过堆叠在一起设置，因此可以有效地使用空间。因此，可以实现小型化。

6. 发明授权

US09035289B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US09035289B2
公开(公告)日：2015-05-19
申请号：US13930832
申请日：2013-06-28
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Katsuyuki Naito , Shinya Aoki
IPC分类号： H01L35/24 , H01L45/00 , H01L51/05 , H01L27/28
CPC分类号： H01L45/12 , H01L27/285 , H01L51/0591
摘要： A nonvolatile memory device includes a first conductive unit, a second conductive unit, and a storage layer. The first conductive unit has a first work function. The second conductive unit has a second work function smaller than the first work function. The storage layer is provided between the first conductive unit and the second conductive unit. The storage layer is made using a source material including an aromatic diamine molecule and an aromatic tetracarboxylic dianhydride molecule. An ionization potential of the aromatic diamine molecule is greater than the first work function. An electron affinity of the aromatic tetracarboxylic dianhydride molecule is less than the second work function.
摘要翻译：非易失性存储器件包括第一导电单元，第二导电单元和存储层。第一导电单元具有第一功函数。第二导电单元具有小于第一功函数的第二功函数。存储层设置在第一导电单元和第二导电单元之间。存储层由包含芳族二胺分子和芳香族四羧酸二酐分子的原料制成。芳族二胺分子的电离电位大于第一功函数。芳族四羧酸二酐分子的电子亲和力小于第二功能。

7. 发明授权

US08649201B2 Memory device, semiconductor device, and driving method therof 有权
标题翻译：存储器件，半导体器件和驱动方法
公开(公告)号：US08649201B2
公开(公告)日：2014-02-11
申请号：US11883027
申请日：2006-01-24
申请人： Kiyoshi Kato , Konami Izumi , Shunpei Yamazaki
发明人： Kiyoshi Kato , Konami Izumi , Shunpei Yamazaki
IPC分类号： G11C17/00
CPC分类号： H01L27/1255 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/53 , G11C2213/72 , G11C2213/79 , H01L27/1214 , H01L27/1266 , H01L27/285 , H01L51/0059
摘要： To provide a memory device which operates with low power consumption, has high reliability of the stored data, and is small-size, light-weight and inexpensive, and a driving method thereof. In addition, to provide a semiconductor device which operates with low power consumption, has high reliability of the stored data and a long distance of radio frequency communication, and is small-size, light-weight and inexpensive, and a driving method thereof. The memory device includes a memory cell array in which at least memory elements are arranged in matrix, and a writing circuit. The memory element has a first conductive layer, a second conductive layer, and an organic compound layer formed therebetween, and the writing circuit includes a voltage generating circuit for generating a voltage in order to apply at plural times, and a timing controlling circuit for controlling output time of the voltage.
摘要翻译：为了提供以低功耗工作的存储器件，具有高可靠性的存储数据，并且体积小，重量轻且便宜，并且其驱动方法。此外，为了提供以低功耗工作的半导体装置，具有高可靠性的存储数据和长距离的射频通信，并且体积小，重量轻且便宜，以及其驱动方法。存储器件包括至少存储器元件排列成矩阵的存储单元阵列和写入电路。存储元件具有形成在其间的第一导电层，第二导电层和有机化合物层，并且写入电路包括用于产生电压以便多次施加的电压产生电路，以及用于控制的定时控制电路电压的输出时间。

8. 发明授权

US08558220B2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same 有权
标题翻译：使用在底部导体上形成的选择性制造的碳纳米管可逆电阻切换元件的记忆单元及其形成方法
公开(公告)号：US08558220B2
公开(公告)日：2013-10-15
申请号：US11968156
申请日：2007-12-31
申请人： April Schricker , Mark Clark , Brad Herner
发明人： April Schricker , Mark Clark , Brad Herner
IPC分类号： H01L29/08
CPC分类号： H01L51/0575 , B82Y10/00 , G11C13/025 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L27/285 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L51/0048 , H01L51/0591 , H01L51/0595
摘要： In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
摘要翻译：在一些方面，提供一种制造存储单元的方法，其包括：（1）在衬底上方制造第一导体; （2）选择性地在第一导体上方制造碳纳米管（CNT）材料; （3）在CNT材料之上制造二极管; 和（4）在二极管上方制造第二导体。提供了许多其他方面。

9. 发明授权

US08471298B2 Nanoscopic wire-based devices and arrays 有权
标题翻译：纳米线性基于线的器件和阵列
公开(公告)号：US08471298B2
公开(公告)日：2013-06-25
申请号：US13444334
申请日：2012-04-11
申请人： Charles M. Lieber , Thomas Rueckes , Ernesto Joselevich , Kevin Kim
发明人： Charles M. Lieber , Thomas Rueckes , Ernesto Joselevich , Kevin Kim
IPC分类号： H01L27/10 , G11C11/00 , G11C13/00
CPC分类号： G11C23/00 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , G11C13/025 , G11C2213/16 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L27/10 , H01L27/285 , H01L51/0048 , H01L51/0052 , H01L51/0595 , Y10S977/75 , Y10S977/762 , Y10S977/843 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
摘要翻译：描述由纳米线组成的电气装置及其制造和使用的方法。纳米线可以是纳米管，优选单壁碳纳米管。它们可以使用化学图案化的表面，通过化学气相沉积方向布置在横杆阵列中。化学气相沉积也可以用于在引导电场的情况下在阵列中形成纳米管，任选地与自组装单层图案组合。描述双稳态设备。

10. 发明授权

US08394666B2 Organic memory devices and methods of fabricating such devices 失效
标题翻译：有机存储器件及其制造方法
公开(公告)号：US08394666B2
公开(公告)日：2013-03-12
申请号：US12923529
申请日：2010-09-27
申请人： Won Jae Joo , Tae Lim Choi , Jae Ho Lee
发明人： Won Jae Joo , Tae Lim Choi , Jae Ho Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0579 , B82Y10/00 , G11C11/5614 , G11C11/5664 , G11C13/0011 , G11C13/0014 , G11C13/0016 , G11C2213/77 , H01L27/285 , H01L51/002 , H01L51/0036
摘要： Disclosed herein are organic memory devices and methods for fabricating such devices. The organic memory devices comprise a first electrode, a second electrode and an organic active layer extending between the first and second electrodes wherein the organic active layer is formed from one or more electrically conductive organic materials that contain heteroatoms and which are configured in such a manner as that the heteroatoms are available for linking or complexing metal atoms within the organic active layer. The metal ions may then be reduced to form metal filaments within the organic active layer to form a low resistance state and the metal filaments may, in turn, be oxidized to form a high resistance state and thereby function as memory devices.
摘要翻译：本文公开了用于制造这种装置的有机存储器件和方法。有机存储器件包括第一电极，第二电极和在第一和第二电极之间延伸的有机活性层，其中有机活性层由一种或多种含有杂原子的导电有机材料形成，并且以这种方式配置因为杂原子可用于在有机活性层内连接或络合金属原子。然后可以将金属离子还原成在有机活性层内形成金属丝，以形成低电阻状态，并且金属丝又可被氧化以形成高电阻状态，从而用作存储器件。

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