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1. 发明授权

US09455207B2 All-in-one power semiconductor module 有权
标题翻译：一体化功率半导体模块
公开(公告)号：US09455207B2
公开(公告)日：2016-09-27
申请号：US13830122
申请日：2013-03-14
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kwang Soo Kim , Si Joong Yang , Bum Seok Suh , Young Hoon Kwak , Job Ha
IPC分类号： H01L23/043 , H01L23/049 , H01L23/00 , H01L23/14 , H01L23/373
CPC分类号： H01L23/043 , H01L23/049 , H01L23/14 , H01L23/3735 , H01L24/36 , H01L24/37 , H01L24/40 , H01L2224/371 , H01L2224/37147 , H01L2224/37155 , H01L2224/3716 , H01L2224/37599 , H01L2224/40095 , H01L2224/40137 , H01L2224/40225 , H01L2224/48091 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/19105 , H01L2924/00014 , H01L2924/00
摘要： Disclosed herein is an all-in-one power semiconductor module including a plurality of first semiconductor devices formed on a substrate; a housing molded and formed to include bridges formed across upper portions of the plurality of first semiconductor devices; and a plurality of lead members integrally formed with the housing and electrically connecting the plurality of first semiconductor devices and the substrate.According to the present invention, reliability can be improved by increasing bonding areas and bonding strength of semiconductor devices as well as processibilty can be enhanced and failure is reduced by adjusting a step difference with respect to an arrangement and height of the semiconductor devices. Further, a processing time resulting from an omission of a wire bonding process is reduced.
摘要翻译：根据本发明，通过增加接合面积和半导体器件的接合强度可以提高可靠性，并且通过调节相对于半导体器件的布置和高度的台阶差，可以提高加工性并降低故障。此外，减少了由于省略引线键合处理而产生的处理时间。

2. 发明授权

US09312787B2 Inverter with series connected gate driving circuits and voltage divider 有权
标题翻译：变频器采用串联连接的栅极驱动电路和分压器
公开(公告)号：US09312787B2
公开(公告)日：2016-04-12
申请号：US13770882
申请日：2013-02-19
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Wha Jeong , Bum Seok Suh
IPC分类号： H02M1/08 , H02M7/537 , H02M7/538 , H03K17/10
CPC分类号： H02M7/537 , H02M1/08 , H02M7/538 , H03K17/102 , H03K2217/0063 , H03K2217/0081 , Y10T307/685
摘要： An inverter includes an inverter unit including at least one inverter arm having at least one high side switch and at least one low side switch connected to each other in series between a ground and an input power terminal providing input power having a preset voltage level, and switching the input power to output AC power; and a high voltage gate driving circuit unit including at least one high voltage gate driving unit having a plurality of high voltage gate drivers connected in series between an input terminal of an instruction signal requesting a switching control of the inverter unit and an output terminal of a control signal controlling switching of the inverter unit, such that switching of the high side switch is controlled, and voltage generated at the time of switching the high side switch is divided and applied to the plurality of high voltage gate drivers.
摘要翻译：逆变器包括逆变器单元，其包括至少一个逆变臂，所述至少一个逆变臂具有至少一个高侧开关和至少一个低压侧开关，该至少一个低压开关串联连接在接地和提供具有预设电压电平的输入功率的输入电源端子之间，以及切换输入电源输出交流电源; 以及高电压栅极驱动电路单元，其具有至少一个高电压栅极驱动单元，该高电压栅极驱动单元具有串联连接在请求逆变器单元的开关控制的指令信号的输入端子与所述逆变器单元的输出端子之间的多个高压栅极驱动器控制信号控制逆变器单元的切换，使得高侧开关的切换被控制，并且将切换高侧开关时产生的电压分压并施加到多个高压栅极驱动器。

3. 发明授权

US09226430B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US09226430B2
公开(公告)日：2015-12-29
申请号：US13789030
申请日：2013-03-07
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kwang Soo Kim , Tae Hyun Kim , Bum Seok Suh , In Wha Jeong , Young Ki Lee
IPC分类号： H05K7/20 , H01L23/367 , H01L23/498 , H01L25/07
CPC分类号： H05K7/209 , H01L23/367 , H01L23/49833 , H01L23/49861 , H01L24/73 , H01L25/072 , H01L2224/32245 , H01L2224/48229 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15159 , H01L2224/48227 , H01L2924/00012 , H01L2924/00
摘要： There is provided a power semiconductor module in which power semiconductor elements, integration of which may be difficult due to heating, are modularized. The power semiconductor module includes: a heat dissipation substrate electrically connected to a common connection terminal; and a plurality of electronic elements disposed on the heat dissipation substrate, wherein the electronic elements have varying spaces therebetween.
摘要翻译：提供了功率半导体模块，其中由于加热而可能难以集成的功率半导体元件被模块化。功率半导体模块包括：电连接到公共连接端子的散热基板; 以及设置在所述散热基板上的多个电子元件，其中，所述电子元件之间具有不同的间隔。

4. 发明授权

US09123683B2 Unit power module and power module package comprising the same 有权
标题翻译：单元电源模块和电源模块封装组成
公开(公告)号：US09123683B2
公开(公告)日：2015-09-01
申请号：US13782859
申请日：2013-03-01
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Tae Hyun Kim , Bum Seok Suh , Do Jae Yoo , Kwang Soo Kim
IPC分类号： H01L23/00
CPC分类号： H01L24/34 , H01L24/33 , H01L24/36 , H01L24/40 , H01L24/41 , H01L2224/40095 , H01L2224/40137 , H01L2224/83801 , H01L2224/84801 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： Disclosed herein is a unit power module including: a first semiconductor chip having one surface on which a 1-1-th electrode and a 1-2-th electrode spaced apart from the 1-1-th electrode are formed and the other surface on which a 1-3-th electrode is formed, a second semiconductor chip having one surface on which a 2-1-th electrode is formed and the other surface on which a 2-2-th electrode is formed, a first metal plate contacting the 1-1-th electrode of the first semiconductor chip and the 2-1-th electrode of the second semiconductor chip, a second metal plate contacting the 1-2-th electrode of the first semiconductor chip and spaced apart from the first metal plate, a third metal plate contacting the 1-3-th electrode of the first semiconductor chip and the 2-2-th electrode of the second semiconductor chip, and a sealing member formed to surround the first metal plate, the second metal plate, and the third metal plate.
摘要翻译：这里公开了一种单位功率模块，包括：第一半导体芯片，其具有一个表面，其上形成有与第1-1电极间隔开的第1-1电极和第1-2电极，另一个表面在形成有第1-3电极的第二半导体芯片，形成有第2-1电极的一个表面的第二半导体芯片和形成有第2-2电极的另一表面，第一金属板接触第一半导体芯片的第1-1电极和第二半导体芯片的第2-1电极，与第一半导体芯片的第1-2电极接触并与第一半导体芯片间隔开的第二金属板与第一半导体芯片的第1-3电极和第二半导体芯片的第2-2电极接触的第三金属板和形成为围绕第一金属板，第二金属板，和第三金属板。

5. 发明申请

US20140167239A1 POWER MODULE PACKAGE 有权
标题翻译：电源模块封装
公开(公告)号：US20140167239A1
公开(公告)日：2014-06-19
申请号：US14106107
申请日：2013-12-13
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Tae Hyun Kim , Do Jae Yoo , Bum Seok Suh
IPC分类号： H01L23/495
CPC分类号： H01L23/3735 , H01L23/053 , H01L23/3121 , H01L23/4334 , H01L23/49531 , H01L23/49575 , H01L23/49811 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed herein is a power module package including: a substrate including a metal layer, a first insulation layer formed on the metal layer, a first circuit pattern formed on the first insulation layer and including a first pad and a second pad spaced apart from the first pad, a second insulation layer formed on the first insulation layer to cover the first circuit pattern, and a second circuit pattern formed on the second insulation layer and including a third pad formed on a location corresponding to the first pad and a fourth pad spaced apart from the third pad; a semiconductor chip mounted on the second circuit pattern; one end being electrically connected to the semiconductor chip, and another end protruding from the outside, wherein the first pad and the third pad, and the second pad and the fourth pad have different polarities.
摘要翻译：本文公开了一种功率模块封装，包括：基板，包括金属层，形成在金属层上的第一绝缘层，形成在第一绝缘层上的第一电路图案，并且包括第一焊盘和与第一绝缘层间隔开的第二焊盘衬垫，形成在所述第一绝缘层上以覆盖所述第一电路图案的第二绝缘层，以及形成在所述第二绝缘层上并包括形成在与所述第一焊盘相对应的位置的第三焊盘和间隔开的第四焊盘的第二焊盘图案从第三垫; 安装在第二电路图案上的半导体芯片; 一端电连接到半导体芯片，另一端从外部突出，其中第一焊盘和第三焊盘以及第二焊盘和第四焊盘具有不同的极性。

6. 发明授权

US09484806B2 Driving apparatus for driving power factor correction circuit 有权
标题翻译：驱动功率因数校正电路的驱动装置
公开(公告)号：US09484806B2
公开(公告)日：2016-11-01
申请号：US13838333
申请日：2013-03-15
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Wha Jeong , Chang Jae Heo , Bum Seok Suh
IPC分类号： H02M1/42 , H02M3/158
CPC分类号： H02M1/4225 , H02M3/158 , Y02B70/126
摘要： There is provided a driving apparatus for driving an interleaved power factor correction circuit including a first main switch and a second main switch performing a switching operation with a predetermined phase difference and a first auxiliary switch and a second auxiliary switch forming a transformation path for surplus power existing before an ON operation of the first main switch and a second main switch, respectively, including: an input unit obtaining an input signal; a current sensing unit obtaining information regarding a current of the interleaved power factor correction circuit; and an output unit outputting a first control signal with respect to the first main switch, a third control signal with respect to the second main switch, a second control signal with respect to the first auxiliary switch, and a fourth control signal with respect to the second auxiliary switch, based on the input signal and the current information.
摘要翻译：提供了一种用于驱动交织的功率因数校正电路的驱动装置，该电路包括：第一主开关和第二主开关，其执行具有预定相位差的开关操作;以及第一辅助开关和第二辅助开关，其形成用于剩余电力的变换路径分别存在于第一主开关和第二主开关的导通操作之前，包括：输入单元，其获得输入信号; 电流检测单元，获得关于交错式功率因数校正电路的电流的信息; 以及输出单元，输出关于第一主开关的第一控制信号，相对于第二主开关的第三控制信号，相对于第一辅助开关的第二控制信号，以及相对于第二主开关的第四控制信号第二辅助开关，基于输入信号和当前信息。

7. 发明授权

US09294007B2 Gate driving circuit and inverter having the same 有权
标题翻译：栅极驱动电路和逆变器具有相同的功能
公开(公告)号：US09294007B2
公开(公告)日：2016-03-22
申请号：US13768909
申请日：2013-02-15
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Wha Jeong , Bum Seok Suh
IPC分类号： H02M7/537 , H02M1/08 , H02M7/5387 , H03K17/0814 , H03K17/10 , H03K17/74 , H02M7/487 , H02M1/00
CPC分类号： H02M7/537 , H02M1/08 , H02M7/487 , H02M7/5387 , H02M2001/0006 , H03K17/08148 , H03K17/107 , H03K17/74
摘要： There is provided an inverter including: an inverter unit including at least one inverter arm having a plurality of switches, and switching the input power according to control to output an alternating current power; at least one driving unit including at least one high voltage gate driving unit having a plurality high voltage gate drivers connected to one another in series between an input terminal of an instruction signal instructing a switching control of an inverter unit and an output terminal of a control signal controlling switching of the inverter unit to control switching driving of a high side switch and including at least one low voltage gate driver to control switching driving of a low side switch; and at least one bootstrap unit charging/discharging and dividing a voltage generated at the time of switching the plurality of switches according to switching control of the driving unit.
摘要翻译：提供一种逆变器，包括：逆变器单元，包括具有多个开关的至少一个逆变臂，并根据控制切换输入功率以输出交流电力; 至少一个驱动单元，其包括至少一个高电压栅极驱动单元，所述至少一个高电压栅极驱动单元具有多个高电压栅极驱动器，所述多个高压栅极驱动器串联连接在指示逆变器单元的开关控制的指令信号的输入端与控制器的输出端子之间信号控制逆变器单元的切换以控制高侧开关的开关驱动，并且包括至少一个低压栅极驱动器以控制低侧开关的开关驱动; 以及至少一个自举单元根据所述驱动单元的切换控制来对所述多个开关进行切换时产生的电压进行充放电。

8. 发明授权

US09123688B2 Semiconductor module package 有权
标题翻译：半导体模块封装
公开(公告)号：US09123688B2
公开(公告)日：2015-09-01
申请号：US14043549
申请日：2013-10-01
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Tae Hyun Kim , Bum Seok Suh , Joon Hyung Cho , Si Joong Yang
IPC分类号： H01L23/48 , H01L23/373 , H01L23/40
CPC分类号： H01L23/3735 , H01L23/3736 , H01L2023/4056 , H01L2224/0603 , H01L2224/48095 , H01L2224/48137 , H01L2224/48139 , H01L2224/49113 , H01L2224/49175 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00 , H01L2224/49111
摘要： Disclosed herein is a semiconductor module package, including: a first module including a first heat radiation substrate and one or more first semiconductor elements and having a first N terminal and a first P terminal formed at one end thereof; a second module including a second heat radiation substrate and one or more second semiconductor elements, having a second N terminal and a second P terminal formed at one end thereof, and disposed so as to face the first module; and a first output terminal formed by electrically connecting the first module to the second module.
摘要翻译：这里公开了一种半导体模块封装，包括：第一模块，包括第一散热基板和一个或多个第一半导体元件，并且具有在其一端形成的第一N端子和第一P端子; 第二模块，包括第二散热基板和一个或多个第二半导体元件，具有形成在其一端的第二N端子和第二P端子，并且被设置成面对第一模块; 以及通过将第一模块电连接到第二模块而形成的第一输出端子。

9. 发明授权

US08866455B2 Power factor correction circuit 有权
标题翻译：功率因数校正电路
公开(公告)号：US08866455B2
公开(公告)日：2014-10-21
申请号：US13781330
申请日：2013-02-28
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： In Wha Jeong , Bum Seok Suh , Hyo Jin Lee
IPC分类号： G05F1/445 , G05F1/70
CPC分类号： G05F1/70 , H02M1/34 , H02M1/4225 , H02M1/44 , H02M2001/0032 , H02M2001/342 , H02M2003/1586 , Y02B70/126 , Y02B70/1491 , Y02B70/16
摘要： There is provided a power factor correction circuit including: a main switching unit including a first main switch and a second main switch performing a switching operation to regulate a phase difference between a current and a voltage of input power, respectively; a main inductor unit including a first main inductor and a second main inductor accumulating or discharging energy according to a switching operation of each of the first main switch and the second main switch; a snubber switching unit including a first snubber switch and a second snubber switch providing zero-voltage turn-on conditions to the first main switch and the second main switch, respectively; and a controller controlling a switching operation of the main switching unit and the snubber switching unit.
摘要翻译：提供了一种功率因数校正电路，包括：主开关单元，包括第一主开关和第二主开关，分别执行开关操作以调节输入功率的电流和电压之间的相位差; 主电感器单元，其包括根据第一主开关和第二主开关中的每一个的开关操作而累积或放电的第一主电感器和第二主电感器; 缓冲开关单元，包括分别向所述第一主开关和所述第二主开关提供零电压接通状态的第一缓冲开关和第二缓冲开关; 以及控制主开关单元和缓冲器切换单元的切换动作的控制器。

10. 发明申请

US20140177288A1 FLYBACK CONVERTER 有权
标题翻译： FLYBACK转换器
公开(公告)号：US20140177288A1
公开(公告)日：2014-06-26
申请号：US13794036
申请日：2013-03-11
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Wha Jeong , Bum Seok Suh , Kwang Soo Kim
IPC分类号： H02M3/335
CPC分类号： H02M3/285 , H02M3/33507 , H02M3/33569
摘要： There is provided a flyback converter, including: a power supply unit supplying input power; a transformer unit including first and second transformers converting first and second primary current from the power supply unit into first and second secondary current, respectively; a main switch unit including first and second main switches respectively intermitting the first and second primary current flowing in respective primary windings of the first and second transformers; an auxiliary switch unit including first and second auxiliary switches forming respective transfer paths for dump power present before the first and second main switches are switched on; and an auxiliary inductor unit including first and second auxiliary inductors respectively adjusting the amount of current flowing in the first and second auxiliary switches during the switching operation thereof, wherein the first and second main switches perform a switching operation while having a predetermined phase difference therebetween.
摘要翻译：提供了一种反激转换器，包括：提供输入功率的电源单元; 变压器单元，包括分别将第一和第二初级电流从电源单元转换成第一和第二次级电流的第一和第二变压器; 主开关单元包括分别中断在第一和第二变压器的相应初级绕组中流动的第一和第二初级电流的第一和第二主开关; 辅助开关单元，包括第一和第二辅助开关，其形成用于在第一和第二主开关之前存在的倾卸电力的各个传送路径; 以及辅助电感器单元，其包括第一和第二辅助电感器，其分别在其开关操作期间调节在第一和第二辅助开关中流动的电流量，其中第一和第二主开关在它们之间具有预定的相位差的同时进行开关操作。

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