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1. 发明授权

US09991424B2 Light-emitting diode and method for manufacturing same 有权
公开(公告)号：US09991424B2
公开(公告)日：2018-06-05
申请号：US15355219
申请日：2016-11-18
申请人： Seoul Viosys Co., Ltd.
发明人： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC分类号： H01L31/12 , H01L33/44 , H01L33/22 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/06 , H01L33/60 , H01L33/40
CPC分类号： H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

2. 发明授权

US10249797B2 High efficiency light emitting diode and method of fabricating the same 有权
公开(公告)号：US10249797B2
公开(公告)日：2019-04-02
申请号：US14694651
申请日：2015-04-23
申请人： Seoul Viosys Co., Ltd.
发明人： Chang Yeon Kim , Da Hye Kim , Hong Chul Lim , Joon Hee Lee , Jong Kyun You
IPC分类号： H01L33/38 , H01L33/46 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/00 , H01L33/22
摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

3. 发明授权

US09508909B2 Light-emitting diode and method for manufacturing same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US09508909B2
公开(公告)日：2016-11-29
申请号：US14980937
申请日：2015-12-28
申请人： Seoul Viosys Co., Ltd.
发明人： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC分类号： H01L27/15 , H01L33/60 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/44 , H01L33/06 , H01L33/00
CPC分类号： H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
摘要翻译：发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。电极延伸部包括接触n型化合物半导体层的Ni层和设置在Ni层上的两个Au层。

4. 发明申请

US20160111613A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20160111613A1
公开(公告)日：2016-04-21
申请号：US14980937
申请日：2015-12-28
申请人： Seoul Viosys Co., Ltd.
发明人： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC分类号： H01L33/60 , H01L33/06 , H01L33/38 , H01L33/00 , H01L33/32
CPC分类号： H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
摘要翻译：发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。电极延伸部包括与n型化合物半导体层接触的Ni层和设置在Ni层上的2层Au层。

5. 发明申请

US20170069799A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20170069799A1
公开(公告)日：2017-03-09
申请号：US15355219
申请日：2016-11-18
申请人： Seoul Viosys Co., Ltd.
发明人： Tae Hyuk IM , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC分类号： H01L33/44 , H01L33/38 , H01L33/00 , H01L33/06 , H01L33/32 , H01L33/40 , H01L33/22
CPC分类号： H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
摘要翻译：一种发光二极管，包括支撑衬底，设置在支撑衬底上并包括p型化合物半导体层的半导体堆叠，有源层和n型化合物半导体层，设置在支撑衬底之间的反射金属层所述反射金属层与所述半导体叠层的p型化合物半导体层欧姆接触，并且包括暴露所述半导体叠层的一部分的凹槽，设置在所述支撑基板和所述半导体叠层之间的绝缘层，以及设置在所述槽中，以及第一电极，所述第一电极包括第一电极焊盘和第一电极延伸部，并且与所述第一电极延伸部连接到所述第一电极焊盘的所述半导体堆叠的所述n型化合物半导体层接触，电极延伸沿着发光二极管的外边界形成。

6. 发明授权

US09236533B2 Light emitting diode and method for manufacturing same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US09236533B2
公开(公告)日：2016-01-12
申请号：US14368268
申请日：2012-12-21
申请人： Seoul Viosys Co., Ltd.
发明人： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC分类号： H01L29/16 , H01L33/44 , H01L33/22 , H01L33/38 , H01L33/32 , H01L33/00 , H01L33/20
CPC分类号： H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
摘要： Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
摘要翻译：公开了一种发光二极管及其制造方法。根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。光散射图可以提高光提取效率。

7. 发明申请

US20180040767A1 LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 审中-公开
公开(公告)号：US20180040767A1
公开(公告)日：2018-02-08
申请号：US15551575
申请日：2016-01-28
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jong Min Jang , Jong Kyun You , Da Hye Kim , Chae Hon Kim , Seon Min Bae , Jae Hee Lim
IPC分类号： H01L33/10 , H01L33/22 , H01L33/38 , H01L33/32 , H01L33/40 , H01L33/16
CPC分类号： H01L33/10 , H01L33/0075 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/42
摘要： Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

8. 发明授权

US09306120B2 High efficiency light emitting diode 有权
标题翻译：高效率发光二极管
公开(公告)号：US09306120B2
公开(公告)日：2016-04-05
申请号：US14085092
申请日：2013-11-20
申请人： SEOUL VIOSYS CO., LTD.
发明人： Da Hye Kim , Jong Kyun You , Chang Yeon Kim , Tae Hyuk Im
IPC分类号： H01L33/02 , H01L33/22 , H01L33/00 , H01L33/20 , H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0025
摘要： A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
摘要翻译：根据本发明的示例性实施例的制造方法的发光二极管的方法包括在第一衬底上形成第一导电类型半导体层，有源层和第二导电类型半导体层，形成第二衬底所述第二导电型半导体层将所述第一基板与所述第一导电型半导体层分离，在分离所述基板之后在所述第一导电型半导体层上形成包括多个开口的掩模图案，蚀刻所述第一导电型具有设置在其上的掩模图案的半导体层以形成彼此分离的多个凹槽，去除掩模图案，以及蚀刻第一导电型半导体层的表面以形成亚微观纹理。

9. 发明授权

US10326050B2 Light-emitting device with improved light extraction efficiency 有权
公开(公告)号：US10326050B2
公开(公告)日：2019-06-18
申请号：US15551575
申请日：2016-01-28
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jong Min Jang , Jong Kyun You , Da Hye Kim , Chae Hon Kim , Seon Min Bae , Jae Hee Lim
IPC分类号： H01L33/10 , H01L33/22 , H01L33/38 , H01L33/32 , H01L33/40 , H01L33/16 , H01L33/42 , H01L33/00 , H01L33/20
摘要： Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

10. 发明授权

US10134956B2 Light emitting diode and manufacturing method thereof 有权
公开(公告)号：US10134956B2
公开(公告)日：2018-11-20
申请号：US15503963
申请日：2015-08-24
申请人： Seoul Viosys Co., Ltd.
发明人： Jong Kyun You , Da Hye Kim , Chang Ik Kim
IPC分类号： H01L33/60 , H01L33/62 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/00 , H01L33/16 , H01L33/44 , H01L33/48 , H01L33/54 , H01L33/22
摘要： A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first semiconductor layer; at least one groove formed on the lower surface of the light emitting structure; a second electrode located on at least the lower surface of the second semiconductor layer, and electrically connected with the second semiconductor layer; an insulating layer partially covering the second electrode and the lower surface of the light emitting structure, and including at least one opening corresponding to the at least one groove; and a first electrode electrically connected to the first semiconductor layer exposed to the at least one groove, and at least partially covering the insulating layer, wherein the second electrode includes a second contact layer including an ohmic contact layer, and the ohmic contact layer is disposed in the shape of a plurality of islands.

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