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1. 发明授权

US09431377B2 Light emitting device and method of fabricating the same 有权
公开(公告)号：US09431377B2
公开(公告)日：2016-08-30
申请号：US14138917
申请日：2013-12-23
申请人： Seoul Viosys Co., Ltd.
发明人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheol Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC分类号： H01L33/62 , H01L25/075 , H01L27/15 , H01L33/00 , H01L33/46
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

2. 发明授权

US10283675B2 Vertical light emitting diode having electrode configuration and light emitting diode package having the same 有权
公开(公告)号：US10283675B2
公开(公告)日：2019-05-07
申请号：US15623375
申请日：2017-06-14
申请人： Seoul Viosys Co., Ltd.
发明人： Jong Kyun You , Byoung Kyu Park , Chang Yeon Kim , Chae Hon Kim
IPC分类号： H01L33/38 , H01L33/22 , H01L33/44 , H01L33/48 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/08
摘要： A light emitting diode including a semiconductor stack including a lower semiconductor layer, an active layer, and an upper semiconductor layer; an upper electrode connected to the upper semiconductor layer and including an electrode pad and extensions extending from the electrode pad; and a lower electrode connected to the lower semiconductor layer. The electrode pad includes a first electrode pad having an elongated shape, disposed along a first side of the upper semiconductor layer, and covering the upper semiconductor layer near the first side of the upper semiconductor layer, and the extensions include an edge extension extending along an edge of the upper semiconductor layer in the electrode pad and surrounding a luminous region and middle extensions extending from the edge extension or the electrode pad and dividing the luminous region into a plurality of luminous regions.

3. 发明授权

US10249797B2 High efficiency light emitting diode and method of fabricating the same 有权
公开(公告)号：US10249797B2
公开(公告)日：2019-04-02
申请号：US14694651
申请日：2015-04-23
申请人： Seoul Viosys Co., Ltd.
发明人： Chang Yeon Kim , Da Hye Kim , Hong Chul Lim , Joon Hee Lee , Jong Kyun You
IPC分类号： H01L33/38 , H01L33/46 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/00 , H01L33/22
摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

4. 发明申请

US20140209952A1 HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：高效发光二极管及其制造方法
公开(公告)号：US20140209952A1
公开(公告)日：2014-07-31
申请号：US14229713
申请日：2014-03-28
申请人： Seoul Viosys Co., Ltd.
发明人： Kyung Hee YE , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
IPC分类号： H01L33/46 , H01L33/24 , H01L33/42
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
摘要翻译：一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

5. 发明授权

US10326050B2 Light-emitting device with improved light extraction efficiency 有权
公开(公告)号：US10326050B2
公开(公告)日：2019-06-18
申请号：US15551575
申请日：2016-01-28
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jong Min Jang , Jong Kyun You , Da Hye Kim , Chae Hon Kim , Seon Min Bae , Jae Hee Lim
IPC分类号： H01L33/10 , H01L33/22 , H01L33/38 , H01L33/32 , H01L33/40 , H01L33/16 , H01L33/42 , H01L33/00 , H01L33/20
摘要： Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

6. 发明申请

US20190044027A1 VERTICAL TYPE LIGHT EMITTING DIODE 审中-公开
公开(公告)号：US20190044027A1
公开(公告)日：2019-02-07
申请号：US15872900
申请日：2018-01-16
申请人： SEOUL VIOSYS CO., LTD.
发明人： Mi Hee Lee , Chang Yeon Kim , Ju Yong Park , Jong Kyun You , Joon Hee Lee
IPC分类号： H01L33/20 , H01L33/10 , H01L33/32
摘要： Disclosed herein is a vertical type light emitting diode having a mesa including a groove. The light emitting diode includes: a support substrate; a first conductivity type semiconductor layer disposed on the support substrate; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer through the second conductivity type semiconductor layer and the active layer; a first electrode disposed between the second conductivity type semiconductor layer and the support substrate and including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

7. 发明授权

US10134956B2 Light emitting diode and manufacturing method thereof 有权
公开(公告)号：US10134956B2
公开(公告)日：2018-11-20
申请号：US15503963
申请日：2015-08-24
申请人： Seoul Viosys Co., Ltd.
发明人： Jong Kyun You , Da Hye Kim , Chang Ik Kim
IPC分类号： H01L33/60 , H01L33/62 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/00 , H01L33/16 , H01L33/44 , H01L33/48 , H01L33/54 , H01L33/22
摘要： A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first semiconductor layer; at least one groove formed on the lower surface of the light emitting structure; a second electrode located on at least the lower surface of the second semiconductor layer, and electrically connected with the second semiconductor layer; an insulating layer partially covering the second electrode and the lower surface of the light emitting structure, and including at least one opening corresponding to the at least one groove; and a first electrode electrically connected to the first semiconductor layer exposed to the at least one groove, and at least partially covering the insulating layer, wherein the second electrode includes a second contact layer including an ohmic contact layer, and the ohmic contact layer is disposed in the shape of a plurality of islands.

8. 发明授权

US09337175B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US09337175B2
公开(公告)日：2016-05-10
申请号：US14229773
申请日：2014-03-28
申请人： Seoul Viosys Co., Ltd.
发明人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC分类号： H01L25/075 , H01L27/15 , H01L33/62 , H01L33/00 , H01L33/46
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

9. 发明申请

US20150243847A1 HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：高效发光二极管及其制造方法
公开(公告)号：US20150243847A1
公开(公告)日：2015-08-27
申请号：US14694651
申请日：2015-04-23
申请人： Seoul Viosys Co., Ltd.
发明人： Chang Yeon KIM , Da Hye Kim , Hong Chul Lim , Joon Hee Lee , Jong Kyun You
IPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L33/32
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/46 , H01L2224/48463 , H01L2224/73265
摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.
摘要翻译：本发明的示例性实施例涉及一种高效率发光二极管（LED）。根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层电极焊盘和半导体堆叠。

10. 发明授权

US10290769B2 Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer 有权
公开(公告)号：US10290769B2
公开(公告)日：2019-05-14
申请号：US15872900
申请日：2018-01-16
申请人： SEOUL VIOSYS CO., LTD.
发明人： Mi Hee Lee , Chang Yeon Kim , Ju Yong Park , Jong Kyun You , Joon Hee Lee
IPC分类号： H01L27/32 , H01L33/20 , H01L33/32 , H01L33/10
摘要： A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

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