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1. 发明授权

US09362301B2 Method for fabricating pipe gate nonvolatile memory device 有权
标题翻译：制造管闸非易失性存储装置的方法
公开(公告)号：US09362301B2
公开(公告)日：2016-06-07
申请号：US14563733
申请日：2014-12-08
申请人： SK hynix Inc.
发明人： Ki-Hong Lee , Kwon Hong , Dae-Gyu Shin
IPC分类号： H01L21/335 , H01L21/339 , H01L21/8239 , H01L27/115 , H01L21/822 , H01L21/28 , H01L29/66 , H01L29/792 , H01L21/311 , H01L21/768
CPC分类号： H01L27/11582 , H01L21/28282 , H01L21/31111 , H01L21/768 , H01L21/8221 , H01L27/11578 , H01L29/66833 , H01L29/7926
摘要： A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.
摘要翻译：非易失性存储器件包括具有管道通道孔的管道绝缘层，设置在管道绝缘层上方的管道栅极，一对具有柱状电池沟道的电池串，以及连接柱状电池槽和围绕内侧壁的管道和管道通孔的底部。

2. 发明授权

US09520459B2 Surface treatment method for semiconductor device 有权
标题翻译：半导体器件的表面处理方法
公开(公告)号：US09520459B2
公开(公告)日：2016-12-13
申请号：US15048620
申请日：2016-02-19
申请人： SK hynix Inc.
发明人： Sung-Hyuk Cho , Hyo-Sang Kang , Sung-Ki Park , Kwon Hong , Hyung-Soon Park , Hyung-Hwan Kim , Young-Bang Lee , Ji-Hye Han , Tae-Yeon Jung , Hyeong-Jin Nor
IPC分类号： H01L21/02 , H01L21/311 , H01L49/02 , H01L21/321 , H01L27/108
CPC分类号： H01L28/60 , H01L21/0206 , H01L21/02068 , H01L21/31111 , H01L21/321 , H01L27/1085 , H01L27/10852 , H01L28/90
摘要： A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.
摘要翻译：用于半导体器件的表面处理方法包括提供形成多个突出图案的基板，在多个突出图案的每一个的表面上形成疏水涂层，用去离子水冲洗基板，并干燥基板，其中所述疏水涂层使用包括具有多于一个烃基的磷酸酯，具有多于一个烃基的膦酸酯或其混合物的包衣剂形成。

3. 发明授权

US09373788B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09373788B2
公开(公告)日：2016-06-21
申请号：US14185427
申请日：2014-02-20
申请人： SK hynix Inc.
发明人： Young Seok Kwon , Kwon Hong
IPC分类号： H01L21/06 , H01L45/00 , C23C16/30 , C23C16/455
CPC分类号： H01L45/1616 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.
摘要翻译：一种制造半导体器件的方法包括：将包含锗（Ge）前体的第一源气体在第一时间段内提供到半导体衬底上，并且周期性地中断第一时间段内的第一源气体的供应以形成Ge元素半导体衬底。

4. 发明授权

US09293337B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09293337B2
公开(公告)日：2016-03-22
申请号：US14475076
申请日：2014-09-02
申请人： SK hynix Inc.
发明人： Sung-Jin Whang , Moon-Sig Joo , Kwon Hong , Jung-Yeon Lim , Won-Kyu Kim , Bo-Min Seo , Kyoung-Eun Chang
IPC分类号： H01L21/285 , H01L21/28 , H01L21/321 , H01L23/00 , H01L27/108 , H01L29/423 , H01L29/51 , H01L29/788 , H01L29/41 , H01L21/768
CPC分类号： H01L21/28518 , H01L21/28273 , H01L21/28282 , H01L21/321 , H01L21/7685 , H01L24/02 , H01L27/10873 , H01L29/413 , H01L29/42324 , H01L29/513 , H01L29/7881 , H01L2224/0401 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01027 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/04941 , H01L2924/12032 , H01L2924/00
摘要： A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.
摘要翻译：一种半导体器件，包括导电层，形成在导电层上的扩散阻挡层，包括难熔金属化合物，并在表面处理之后获得，以及形成在扩散阻挡层上的金属硅化物层。通过表面处理增加扩散阻挡层的表面能，可以改善扩散阻挡层和金属硅化物层之间的粘合性。因此，尽管金属硅化物层在高温工艺中熔合，但是可以防止在扩散阻挡层和金属硅化物层之间的界面处产生空隙。此外，通过表面处理增加导电层的表面能，可以增加导电层与扩散阻挡层之间的粘合性。

5. 发明授权

US09058984B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09058984B2
公开(公告)日：2015-06-16
申请号：US14268576
申请日：2014-05-02
申请人： SK hynix Inc.
发明人： Kee-Jeung Lee , Kwon Hong , Kyung-Woong Park , Ji-Hoon Ahn
IPC分类号： H01L29/72 , H01L21/02 , C23C16/04 , C23C16/455 , C23C16/56 , H01L49/02 , H01L27/108
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/45529 , C23C16/45531 , C23C16/56 , H01L21/02148 , H01L21/02159 , H01L21/02161 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/02356 , H01L27/1085 , H01L28/40
摘要： A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.
摘要翻译：半导体器件包括其中混合有锆，铪和IV族元素的电介质层。制造电容器的方法包括形成底电极，形成电介质层并在电介质层上形成顶电极。

6. 发明授权

US09029273B2 Method for forming silicon oxide film of semiconductor device 有权
标题翻译：形成半导体器件的氧化硅膜的方法
公开(公告)号：US09029273B2
公开(公告)日：2015-05-12
申请号：US13840551
申请日：2013-03-15
申请人： SK Hynix Inc.
发明人： Hyung Soon Park , Kwon Hong , Jong Min Lee , Hyung Hwan Kim , Ji Hye Han , Geun Su Lee
IPC分类号： H01L21/316 , H01L21/02
CPC分类号： H01L21/02164 , H01L21/02219 , H01L21/02222 , H01L21/02282 , H01L21/02307 , H01L21/02326 , H01L21/02343
摘要： A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.
摘要翻译：公开了一种用于形成半导体器件的氧化硅膜的方法。形成半导体器件的氧化硅膜的方法包括使用胺类化合物进行表面处理，从而可以提高氧化硅膜的均匀性和密度。

7. 发明授权

US08982604B2 Resistive memory device and memory apparatus and data processing system having the same 有权
标题翻译：电阻式存储器件和具有相同的存储器件和数据处理系统
公开(公告)号：US08982604B2
公开(公告)日：2015-03-17
申请号：US13746625
申请日：2013-01-22
申请人： SK Hynix Inc.
发明人： Keun Lee , Se Hun Kang , Ja Chun Ku , Kwon Hong
IPC分类号： G11C11/00 , H01L45/00 , G11C13/00
CPC分类号： H01L45/1253 , G11C13/0002 , G11C13/0004 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/1246 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A resistive memory device operable with low power consumption and a memory apparatus and data processing system including the same are provided. The resistive memory includes a chalcogenide compound containing 10 to 60 wt % (atomic weight) of selenium (Se) or tellurium (Te).
摘要翻译：提供了一种低功耗可操作的电阻式存储装置和包括该电阻式存储装置的存储装置和数据处理系统。电阻式存储器包括含有硒（Se）或碲（Te）的10至60重量％（原子量）的硫族化合物。

8. 发明授权

US08821752B2 Etching composition and method for fabricating semiconductor device using the same 有权
标题翻译：蚀刻组合物及其制造方法
公开(公告)号：US08821752B2
公开(公告)日：2014-09-02
申请号：US13708362
申请日：2012-12-07
申请人： SK hynix Inc. , Soulbrain Co., Ltd.
发明人： Sung-Hyuk Cho , Kwon Hong , Hyung-Soon Park , Gyu-Hyun Kim , Ji-Hye Han , Jung-Hun Lim , Jin-Uk Lee , Jae-Wan Park , Chan-Keun Jung
IPC分类号： C09K13/00
CPC分类号： H01L21/30604 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66136 , H01L29/66666 , H01L29/861
摘要： The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching composition. The etching composition of the invention shows a high etching selectivity for a nitride film with respect to an oxide film. Thus, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EEH) may be easily controlled by controlling the etch rate of the oxide film. In addition, the deterioration in electrical characteristics caused by damage to an oxide film or etching of the oxide film may be prevented, and particle generation may be prevented, thereby ensuring the stability and reliability of the etching process.
摘要翻译：本发明提供一种蚀刻组合物，其包含磷酸甲硅烷基化合物，磷酸和去离子水，以及包括使用该蚀刻组合物的蚀刻工艺的半导体制造方法。本发明的蚀刻组合物显示出相对于氧化膜对氮化膜的高蚀刻选择性。因此，当使用本发明的蚀刻组合物去除氮化物膜时，可以通过控制氧化膜的蚀刻速率容易地控制有效场氧化物高度（EEH）。此外，可以防止由氧化膜的损坏引起的电特性的恶化或氧化膜的蚀刻，并且可以防止颗粒的产生，从而确保蚀刻工艺的稳定性和可靠性。

9. 发明授权

US08816424B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08816424B2
公开(公告)日：2014-08-26
申请号：US14075901
申请日：2013-11-08
申请人： SK hynix Inc.
发明人： Ki-Hong Lee , Kwon Hong
IPC分类号： H01L29/792 , H01L29/788 , H01L29/423
CPC分类号： H01L29/792 , H01L21/28273 , H01L27/11556 , H01L27/11582 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/7889 , H01L29/7926
摘要： A non-volatile memory includes a channel layer to extend from a substrate in a vertical direction; a plurality of interlayer dielectric layers and a plurality of gate electrodes to be alternately stacked along the channel layer; and a memory layer to be interposed between the channel layer and each of the gate electrodes, wherein the memory layer comprises a tunnel dielectric layer to contact the channel layer, a first charge trap layer to contact the tunnel dielectric layer and formed of an insulating material, a charge storage layer to contact the first charge trap layer and formed of a semiconducting material or a conductive material, a second charge trap layer to contact the charge storage layer and formed of an insulating material, and a charge blocking layer to contact the second charge trap layer.
摘要翻译：非易失性存储器包括在垂直方向上从衬底延伸的沟道层; 多个层间电介质层和多个栅电极沿沟道层交替层叠; 以及存储层，其被插入在所述沟道层和每个所述栅电极之间，其中所述存储层包括与所述沟道层接触的隧道介电层，用于接触所述隧道介电层并由绝缘材料形成的第一电荷陷阱层与第一电荷陷阱层接触并由半导体材料或导电材料形成的电荷存储层，与电荷存储层接触并由绝缘材料形成的第二电荷陷阱层，以及与第二电荷接触层接触的电荷阻挡层电荷陷阱层。

10. 发明授权

US08692314B2 Non-volatile memory device and method for fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08692314B2
公开(公告)日：2014-04-08
申请号：US13725299
申请日：2012-12-21
申请人： SK hynix Inc.
发明人： Ki-Hong Lee , Moon-Sig Joo , Kwon Hong
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： A non-volatile memory device includes a pair of columnar cell channels vertically extending from a substrate, a doped pipe channel arranged to couple lower ends of the pair of columnar cell channels, insulation layers over the substrate in which the doped pipe channel is buried, memory layers arranged to surround side surfaces of the columnar cell channels, and control gate electrodes arranged to surround the memory layers.
摘要翻译：非易失性存储器件包括从衬底垂直延伸的一对柱状单元通道，布置成耦合该对柱状单元通道的下端的掺杂管道，在其上埋入掺杂管道的衬底上的绝缘层，布置成围绕柱状单元通道的侧表面的存储层以及布置成围绕存储层的控制栅电极。

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