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1. 发明申请

US20150340197A1 ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入装置
公开(公告)号：US20150340197A1
公开(公告)日：2015-11-26
申请号：US14721752
申请日：2015-05-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Takanori Yagita
IPC分类号： H01J37/147 , H01J37/08 , H01J37/317
CPC分类号： H01J37/1477 , H01J37/08 , H01J37/3171 , H01J2237/30483
摘要： An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.
摘要翻译：离子注入装置包括：扫描单元，沿垂直于参考轨迹的水平方向扫描离子束;以及下游电极装置，设置在扫描电极装置的下游。扫描电极装置包括一对沿水平方向彼此相对设置的扫描电极，其间插入有基准轨迹。下游电极装置包括：电极体，其构成为：相对于垂直于基准轨迹和水平方向的垂直方向的开口宽度和/或沿着基准轨迹的方向的开口厚度，开口宽度和配置基准轨迹的中央部的开口厚度与扫描电极的下游端的位置附近的开口宽度和/或开口厚度不同。

2. 发明授权

US09520265B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09520265B2
公开(公告)日：2016-12-13
申请号：US14558187
申请日：2014-12-02
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita
IPC分类号： H01J37/12 , H01J37/317 , H01J37/21
CPC分类号： H01J37/21 , H01J37/12 , H01J37/3171 , H01J2237/1415 , H01J2237/303 , H01J2237/30477
摘要： A multistage quadrupole lens system in an ion implantation apparatus includes a first quadrupole lens and a third quadrupole lens. A first bore radius of the first quadrupole lens may be smaller than a third bore radius of the third quadrupole lens. The multistage quadrupole lens system may further include a second quadrupole lens placed between the first quadrupole lens and the third quadrupole lens. A second bore radius of the second quadrupole lens may take a value lying between the first bore radius of the first quadrupole lens and the third bore radius of the third quadrupole lens (i.e., an intermediate value between them).
摘要翻译：离子注入装置中的多级四极透镜系统包括第一四极透镜和第四四极透镜。第一四极透镜的第一孔半径可以小于第三四极透镜的第三孔半径。多级四极透镜系统还可以包括放置在第一四极透镜和第三四极透镜之间的第二四极透镜。第二四极透镜的第二孔半径可以取位于第一四极透镜的第一孔半径和第三四极透镜的第三孔半径之间的值（即它们之间的中间值）。

3. 发明授权

US09236222B2 Ion implantation apparatus and ion implantation method 有权
标题翻译：离子注入装置和离子注入方法
公开(公告)号：US09236222B2
公开(公告)日：2016-01-12
申请号：US14732239
申请日：2015-06-05
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita , Mitsuaki Kabasawa
IPC分类号： H01J37/317 , H01J37/147 , H01J37/10
CPC分类号： H01J37/3171 , H01J37/147 , H01J37/1474
摘要： An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated.
摘要翻译：离子注入装置包括光束扫描单元和布置在其下游的光束并行化单元。光束扫描单元在入射离子束的中心轴上的扫描单元的中心部分具有扫描原点。光束平行化单元具有在扫描原点处的平行化透镜的焦点。离子注入装置被构造成使得入射到扫描单元中的入射光束的焦点位置沿着入射光束的中心轴线位于扫描原点的上游。将入射光束到扫描单元中的焦点位置被调整为沿着入射光束的中心轴的扫描原点的上游位置，使得由离开的离子束中的空间电荷效应引起的发散现象来自并联单位得到补偿。

4. 发明授权

US09208991B1 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09208991B1
公开(公告)日：2015-12-08
申请号：US14721752
申请日：2015-05-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Takanori Yagita
IPC分类号： H01J3/18 , H01J37/147 , H01J37/317 , H01J37/08
CPC分类号： H01J37/1477 , H01J37/08 , H01J37/3171 , H01J2237/30483
摘要： An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.
摘要翻译：离子注入装置包括：扫描单元，沿垂直于参考轨迹的水平方向扫描离子束;以及下游电极装置，设置在扫描电极装置的下游。扫描电极装置包括一对沿水平方向彼此相对设置的扫描电极，其间插入有基准轨迹。下游电极装置包括：电极体，其构成为：相对于垂直于基准轨迹和水平方向的垂直方向的开口宽度和/或沿着基准轨迹的方向的开口厚度，开口宽度和配置基准轨迹的中央部的开口厚度与扫描电极的下游端的位置附近的开口宽度和/或开口厚度不同。

5. 发明申请

US20150340202A1 ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入装置
公开(公告)号：US20150340202A1
公开(公告)日：2015-11-26
申请号：US14721688
申请日：2015-05-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Takanori Yagita
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： H01J37/3171 , H01J37/1477 , H01J37/30 , H01J37/3007 , H01J37/317 , H01J2237/15 , H01J2237/1534 , H01J2237/303 , H01J2237/31701
摘要： An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.
摘要翻译：离子注入装置包括扫描单元，扫描单元包括扫描电极装置，其允许偏转电场作用在沿着参考轨迹入射的离子束并沿水平方向扫描离子束，并且提供上游电极装置扫描电极装置的上游。扫描电极装置包括一对沿水平方向相对设置的扫描电极，其间插入有基准轨迹，并且一对光束传输校正电极被设置为在垂直于水平方向的垂直方向上彼此面对，具有参考插入其间的轨迹。一对光束传输校正电极中的每一个包括在扫描电极器件的入口附近沿垂直方向向基准轨迹突出的光束传输校正入口电极体。

6. 发明申请

US20200152409A1 ION IMPLANTER AND BEAM PARK DEVICE 审中-公开
公开(公告)号：US20200152409A1
公开(公告)日：2020-05-14
申请号：US16681080
申请日：2019-11-12
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Takanori Yagita
IPC分类号： H01J37/04 , H01J37/317
摘要： An ion implanter having a beam park device on the way of a beamline through which an ion beam is transported toward a wafer is provided. The beam park device includes a pair of park electrodes which faces each other across the beamline, and a beam dump which is provided away from the beamline in a facing direction of the pair of park electrodes and on a downstream side of the pair of park electrodes in a beamline direction. At least one of the pair of park electrodes includes a plurality of electrode bodies which are disposed to be spaced apart from each other in a predetermined direction perpendicular to both a direction in which the beamline extends and the facing direction, and each of the plurality of electrode bodies extends from an upstream side toward the downstream side in the beamline direction.

7. 发明申请

US20150357160A1 ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD 有权
标题翻译：离子植入装置和离子植入方法
公开(公告)号：US20150357160A1
公开(公告)日：2015-12-10
申请号：US14732239
申请日：2015-06-05
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita , Mitsuaki Kabasawa
IPC分类号： H01J37/317 , H01J37/10 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/147 , H01J37/1474
摘要： An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated.
摘要翻译：离子注入装置包括光束扫描单元和布置在其下游的光束并行化单元。光束扫描单元在入射离子束的中心轴上的扫描单元的中心部分具有扫描原点。光束平行化单元具有在扫描原点处的平行化透镜的焦点。离子注入装置被构造成使得入射到扫描单元中的入射光束的焦点位置沿着入射光束的中心轴线位于扫描原点的上游。将入射光束到扫描单元中的焦点位置被调整为沿着入射光束的中心轴的扫描原点的上游位置，使得由离开的离子束中的空间电荷效应引起的发散现象来自并联单位得到补偿。

8. 发明授权

US11017978B2 Ion implanter and beam park device 有权
公开(公告)号：US11017978B2
公开(公告)日：2021-05-25
申请号：US16681080
申请日：2019-11-12
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Takanori Yagita
IPC分类号： H01J37/04 , H01J37/317
摘要： An ion implanter having a beam park device on the way of a beamline through which an ion beam is transported toward a wafer is provided. The beam park device includes a pair of park electrodes which faces each other across the beamline, and a beam dump which is provided away from the beamline in a facing direction of the pair of park electrodes and on a downstream side of the pair of park electrodes in a beamline direction. At least one of the pair of park electrodes includes a plurality of electrode bodies which are disposed to be spaced apart from each other in a predetermined direction perpendicular to both a direction in which the beamline extends and the facing direction, and each of the plurality of electrode bodies extends from an upstream side toward the downstream side in the beamline direction.

9. 发明授权

US09431214B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09431214B2
公开(公告)日：2016-08-30
申请号：US14721688
申请日：2015-05-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Takanori Yagita
IPC分类号： H01J37/00 , H01J37/317 , H01J37/30 , H01J37/147
CPC分类号： H01J37/3171 , H01J37/1477 , H01J37/30 , H01J37/3007 , H01J37/317 , H01J2237/15 , H01J2237/1534 , H01J2237/303 , H01J2237/31701
摘要： An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.
摘要翻译：离子注入装置包括扫描单元，扫描单元包括扫描电极装置，其允许偏转电场作用在沿着参考轨迹入射的离子束并沿水平方向扫描离子束，并且提供上游电极装置扫描电极装置的上游。扫描电极装置包括一对沿水平方向相对设置的扫描电极，其间插入有基准轨迹，并且一对光束传输校正电极被设置为在垂直于水平方向的垂直方向上彼此面对，具有参考插入其间的轨迹。一对光束传输校正电极中的每一个包括在扫描电极器件的入口附近沿垂直方向向基准轨迹突出的光束传输校正入口电极体。

10. 发明授权

US09343262B2 Ion implantation apparatus, beam parallelizing apparatus, and ion implantation method 有权
标题翻译：离子注入装置，光束并行化装置和离子注入方法
公开(公告)号：US09343262B2
公开(公告)日：2016-05-17
申请号：US14468844
申请日：2014-08-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita , Mitsuaki Kabasawa , Haruka Sasaki
IPC分类号： H01J37/00 , H01J37/24 , H01J37/317
CPC分类号： H01J37/243 , H01J37/3171 , H01J2237/047 , H01J2237/10 , H01J2237/30472
摘要： An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens.
摘要翻译：离子注入装置包括光束并联单元和第三电源单元。光束并行化单元包括加速透镜和在离子束输送方向上与加速透镜相邻设置的减速透镜。第三电源单元在多个能量设置之一下操作光束并联单元。多个能量设置包括适于运输低能量离子的第一能量设定和适于运输高能离子束的第二能量设定。第三电源单元被配置为在第二能量设定下至少在加速透镜中产生电位差，并且在第一能量设定下产生至少减速透镜的电位差。减速透镜的曲率小于加速度透镜的曲率。

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