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    • 1. 发明授权
    • Smart verify for programming non-volatile memory
    • 智能验证用于编程非易失性存储器
    • US09564226B1
    • 2017-02-07
    • US14928436
    • 2015-10-30
    • SanDisk Technologies Inc.
    • Mohan DungaGerrit Jan HeminkZhenming ZhouMasaaki Higashitani
    • G11C11/34G11C16/10G11C16/34
    • G11C16/10G11C16/3459
    • Techniques are provided for reducing current consumption while programming non-volatile storage. A smart verify is performed using a subset of memory cells. By applying the smart verify to just a subset of the memory cells current is saved. The smart verify may be used to characterize programming speed. Results of the smart verify may be used to determine a magnitude of a dummy program pulse to be applied later in the programming process. The dummy program pulse is not followed by a program verify, which reduces current. If the dummy program pulse pushes threshold voltages high enough, then those memory cells will not conduct a current when verifying later in programming. Thus, current is saved during the program verify. Also, bit lines of memory cells that received the dummy pulses do not need to be pre-charged prior to a program pulse, which can save more current.
    • 提供了在编程非易失性存储时减少电流消耗的技术。 使用存储器单元的子集执行智能验证。 通过将智能验证应用到存储器单元的一个子集,保存当前的电流。 智能验证可用于表征编程速度。 可以使用智能验证的结果来确定在编程过程中稍后应用的虚拟编程脉冲的幅度。 虚拟程序脉冲不在程序验证后面,这样可以减少电流。 如果虚拟程序脉冲将阈值电压推到足够高的位置,那么当编程稍后验证时,这些存储单元将不会导通电流。 因此,在程序验证期间保存电流。 此外,接收到伪脉冲的存储单元的位线在编程脉冲之前不需要被预充电,这可以节省更多的电流。
    • 3. 发明申请
    • NON-VOLATILE STORAGE WITH TEMPERATURE COMPENSATION BASED ON NEIGHBOR STATE INFORMATION
    • 基于邻国状态信息的温度补偿非挥发性储存
    • US20150043281A1
    • 2015-02-12
    • US14524238
    • 2014-10-27
    • SANDISK TECHNOLOGIES INC.
    • Gerrit Jan HeminkShinji Sato
    • G11C16/26
    • G11C16/26G11C7/04G11C11/5642
    • Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.
    • 数据被编程到一组目标存储器单元中并从其读取。 读取数据时,提供温度补偿。 温度补偿基于温度信息和一个或多个相邻存储单元的状态。 在一个实施例中,当从目标存储器单元的集合读取数据时,系统感测当前温度并确定当前温度与数据编程时的温度之间的温度差。 如果温度差大于阈值,则读取数据的过程包括基于温度信息和邻近状态信息提供温度补偿。 在一个替代方案中,提供温度补偿的决定可以由温差以外的条件触发。
    • 7. 再颁专利
    • Selected word line dependent select gate voltage during program
    • 程序中所选字线相关选择栅极电压
    • USRE45871E1
    • 2016-01-26
    • US14284163
    • 2014-05-21
    • SanDisk Technologies Inc.
    • Chun-Hung LaiDeepanshu DuttaShinji SatoGerrit Jan Hemink
    • G11C11/34G11C11/56G11C16/10G11C16/04
    • G11C11/5628G11C16/0483G11C16/10
    • Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.
    • 公开了用于操作非易失性存储器的方法和装置。 一个或多个编程条件取决于选择用于编程的字线的位置,这可以减少或消除程序干扰。 施加到NAND串的选择晶体管的栅极的电压可以取决于所选字线的位置。 这可以是源极侧或漏极侧选择晶体管。 这可能会阻止或减少由于DIBL而导致的程序干扰。 这也可以防止或减少由于GIDL可能导致的程序干扰。 当编程至少一些字线时,负偏压可以施加到源极侧选择晶体管的栅极。 在一个实施例中,当编程逐渐增加的字线时,逐渐降低的电压用于漏极侧选择晶体管的栅极。
    • 9. 发明授权
    • Ramping pass voltage to enhance channel boost in memory device
    • 缓存通过电压以增强存储器件中的通道升压
    • US08644075B2
    • 2014-02-04
    • US13955597
    • 2013-07-31
    • SanDisk Technologies Inc.
    • Gerrit Jan HeminkShih-Chung LeeAnubhav KhandelwalHenry ChinGuirong LiangDana Lee
    • G11C11/34
    • G11C16/3427G11C16/10
    • In a non-volatile storage system, first and second substrate channel regions for an unselected NAND string are boosted during programming to inhibit program disturb. The first and second substrate channel regions are created on either side of an isolation word line. During a program pulse time period in which a program pulse is applied to a selected word line, a voltage applied to an unselected word line which extends directly over the second channel region is stepped up to a respective pre-program pulse voltage, at a faster rate at which a voltage applied to an unselected word line which extends directly over the first channel region is stepped up to a respective pre-program pulse voltage. This helps improve the isolation between the channel regions.
    • 在非易失性存储系统中,用于未选择的NAND串的第一和第二衬底沟道区在编程期间被增强以抑制编程干扰。 第一和第二衬底沟道区域在隔离字线的任一侧上产生。 在将编程脉冲施加到所选字线的编程脉冲时间段期间,施加到直接在第二通道区域上延伸的未选择字线的电压以更快的速度升高到相应的预编程脉冲电压 施加到直接在第一通道区域上延伸的未选择字线的电压的速率被升高到相应的预编程脉冲电压。 这有助于改善通道区域之间的隔离。