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1. 发明申请

US20120269020A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20120269020A1
公开(公告)日：2012-10-25
申请号：US13232304
申请日：2011-09-14
申请人： Seong-Je PARK , Jung-Hwan Lee , Ji-Hwan Kim , Myung Cho , Beom-Seok Hah
发明人： Seong-Je PARK , Jung-Hwan Lee , Ji-Hwan Kim , Myung Cho , Beom-Seok Hah
IPC分类号： G11C7/00
CPC分类号： G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16
摘要： A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.
摘要翻译：用于操作非易失性存储器件的方法包括响应于程序命令和接收到的地址选择多个字线的字线，确定所选择的字线是否是字线中的字线，执行响应于所述确定的结果对所述字线的第二字线组进行擦除操作，以及对所选择的字线执行编程操作。

2. 发明授权

US08750048B2 Memory device and method for operating the same 有权
标题翻译：存储器件及其操作方法
公开(公告)号：US08750048B2
公开(公告)日：2014-06-10
申请号：US13238435
申请日：2011-09-21
申请人： Myung Cho , Seong-Je Park , Jung-Hwan Lee , Ji-Hwan Kim , Beom-Seok Hah
发明人： Myung Cho , Seong-Je Park , Jung-Hwan Lee , Ji-Hwan Kim , Beom-Seok Hah
IPC分类号： G11C16/34 , G11C16/28 , G11C16/06 , G11C16/26
CPC分类号： G11C11/5642 , G11C16/0483 , G11C2211/5646
摘要： A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.
摘要翻译：存储器包括被配置为存储第一标志数据的至少一个第一标志单元，被配置为存储第二标志数据的至少一个第二标志单元，具有由第一标志单元的第一标志数据确定的电压电平的至少一个第一感测节点至少一个第二感测具有由第二标志单元的第二标志数据确定的电压电平，选择电路被配置为响应于标志地址选择第一感测节点或第二感测节点; 以及确定电路，其具有内部节点，通过所述内部节点流过与所选择的感测节点的电压电平相对应的电流，并且被配置为通过使用一定数量的第一和第二标志数据来确定与所选择的感测节点对应的标志数据的逻辑值电流流过内部节点。

3. 发明授权

US08451665B2 Non-volatile memory device and method for operating the same 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US08451665B2
公开(公告)日：2013-05-28
申请号：US13232304
申请日：2011-09-14
申请人： Seong-Je Park , Jung-Hwan Lee , Ji-Hwan Kim , Myung Cho , Beom-Seok Hah
发明人： Seong-Je Park , Jung-Hwan Lee , Ji-Hwan Kim , Myung Cho , Beom-Seok Hah
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16
摘要： A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.
摘要翻译：用于操作非易失性存储器件的方法包括响应于程序命令和接收到的地址选择多个字线的字线，确定所选择的字线是否是字线中的字线，执行响应于所述确定的结果对所述字线的第二字线组进行擦除操作，以及对所选择的字线执行编程操作。

4. 发明授权

US08576600B2 Semiconductor memory device and operating method thereof 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08576600B2
公开(公告)日：2013-11-05
申请号：US13420038
申请日：2012-03-14
申请人： Jung Hwan Lee , Seong Je Park , Ji Hwan Kim , Myung Cho , Beom Seok Hah
发明人： Jung Hwan Lee , Seong Je Park , Ji Hwan Kim , Myung Cho , Beom Seok Hah
IPC分类号： G11C15/00
CPC分类号： G11C15/046 , G11C16/10
摘要： A semiconductor memory device includes a memory array configured to include memory cells for storing input data and Code Address Memory (CAM) cells for storing setting data used to set an operation condition; an operation circuit configured to perform a CAM read operation by supplying a read voltage to the CAM cells, perform a test operation for detecting unstable CAM cells in each of which a difference between a threshold voltage and the read voltage is smaller than a permitted limit, from among the CAM cells, and perform an erase operation or a program operation for the unstable CAM cells; and a controller configured to control the operation circuit so that the program operation for storing the setting data in the unstable CAM cells is performed if the number of unstable CAM cells detected in the test operation is greater than a permitted value.
摘要翻译：半导体存储器件包括：存储器阵列，被配置为包括用于存储输入数据的存储器单元和用于存储用于设置操作条件的设置数据的代码地址存储器（CAM）单元; 配置为通过向CAM单元提供读取电压来执行CAM读取操作的操作电路，执行用于检测阈值电压和读取电压之间的差小于允许极限的不稳定的CAM单元的测试操作，从CAM单元中进行擦除操作或对不稳定的CAM单元的编程动作; 以及控制器，其被配置为如果在测试操作中检测到的不稳定的CAM单元的数量大于允许值，则执行用于将设置数据存储在不稳定的CAM单元中的程序操作。

5. 发明授权

US08456907B2 Semiconductor memory device and method of operating the same 失效
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08456907B2
公开(公告)日：2013-06-04
申请号：US13337196
申请日：2011-12-26
申请人： Ji Hwan Kim , Seong Je Park , Jung Hwan Lee , Myung Cho , Beom Seok Hah
发明人： Ji Hwan Kim , Seong Je Park , Jung Hwan Lee , Myung Cho , Beom Seok Hah
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16 , G11C16/3459 , G11C2211/5621 , G11C2211/565
摘要： A method of operating a semiconductor memory device includes performing a first program loop including a first program operation and a first verification operation in order to store a lower bit data of n-bit data in memory cells coupled to a page, performing a subprogram loop for memory cells of an erase state, having threshold voltages lower than a target voltage of a negative potential, so that the threshold voltages of the memory cells of the erase state become higher than the target voltage, and performing a second program loop including a second program operation and a second verification operation in order to store an upper bit data of the n-bit data in the memory cells.
摘要翻译：一种操作半导体存储器件的方法包括执行包括第一程序操作和第一验证操作的第一程序循环，以便将n位数据的低位数据存储在耦合到页面的存储单元中，执行子程序循环具有低于负电位的目标电压的阈值电压的擦除状态的存储单元，使得擦除状态的存储单元的阈值电压变得高于目标电压，并且执行包括第二程序的第二程序循环操作和第二验证操作，以便将n位数据的高位数据存储在存储单元中。

6. 发明授权

US08743623B2 Apparatus and methods of bit line setup 有权
标题翻译：位线设置的装置和方法
公开(公告)号：US08743623B2
公开(公告)日：2014-06-03
申请号：US13195548
申请日：2011-08-01
申请人： Myung Cho , Seong Je Park , Jung Hwan Lee
发明人： Myung Cho , Seong Je Park , Jung Hwan Lee
IPC分类号： G11C16/10 , G11C16/06
CPC分类号： G11C16/06 , G11C11/5628 , G11C16/26
摘要： Methods and apparatus are disclosed, including an apparatus that has a memory cell array with a memory cell selectively coupled to a bit line. A control circuit is configured to provide a control signal. A voltage generator is configured to provide a sense signal and a precharge signal in response to the control signal. The apparatus further includes a page buffer configured to provide a bit line voltage to the bit line based on the sense signal and the precharge signal, to thereby control a programming of the memory cell.
摘要翻译：公开了方法和装置，包括具有存储单元阵列的装置，存储单元阵列选择性地耦合到位线。控制电路被配置为提供控制信号。电压发生器被配置为响应于控制信号提供感测信号和预充电信号。该装置还包括一个页面缓冲器，其配置为基于感测信号和预充电信号向位线提供位线电压，从而控制存储单元的编程。

7. 发明申请

US20130033940A1 APPARATUS AND METHODS OF BIT LINE SETUP 有权
标题翻译：位线设置的装置和方法
公开(公告)号：US20130033940A1
公开(公告)日：2013-02-07
申请号：US13195548
申请日：2011-08-01
申请人： Myung Cho , Seong Je Park , Jung Hwan Lee
发明人： Myung Cho , Seong Je Park , Jung Hwan Lee
IPC分类号： G11C16/10 , G11C16/06
CPC分类号： G11C16/06 , G11C11/5628 , G11C16/26
摘要： Methods and apparatus are disclosed, including an apparatus that has a memory cell array with a memory cell selectively coupled to a bit line. A control circuit is configured to provide a control signal. A voltage generator is configured to provide a sense signal and a precharge signal in response to the control signal. The apparatus further includes a page buffer configured to provide a bit line voltage to the bit line based on the sense signal and the precharge signal, to thereby control a programming of the memory cell.
摘要翻译：公开了方法和装置，包括具有存储单元阵列的装置，存储单元阵列选择性地耦合到位线。控制电路被配置为提供控制信号。电压发生器被配置为响应于控制信号提供感测信号和预充电信号。该装置还包括一个页面缓冲器，其配置为基于感测信号和预充电信号向位线提供位线电压，从而控制存储单元的编程。

8. 发明授权

US08582367B2 Semiconductor memory device and method of operating the same 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US08582367B2
公开(公告)日：2013-11-12
申请号：US13177764
申请日：2011-07-07
申请人： Myung Cho , Hwang Huh , Jung Hwan Lee , Ji Hwan Kim
发明人： Myung Cho , Hwang Huh , Jung Hwan Lee , Ji Hwan Kim
IPC分类号： G11C16/06 , G11C16/04 , G11C7/10 , G11C7/22 , G11C29/00
CPC分类号： G11C16/26 , G11C16/10 , G11C29/1201 , G11C29/50 , G11C2029/5006 , G11C2216/14
摘要： A semiconductor memory device includes a memory cell array comprising a plurality of cell strings and a page buffer group comprising a plurality of page buffers coupled to the respective cell string through bit lines. Each of the page buffers includes a latch unit for storing data to be programmed into memory cells included in the cell string or for storing data read from the memory cells. Each of the page buffers is coupled to a pad for the test operation of the memory cells according to data stored in the latch unit in the test operation.
摘要翻译：半导体存储器件包括包括多个单元串的存储单元阵列和包括通过位线耦合到各个单元串的多个页缓冲器的页缓冲器组。每个页面缓冲器包括用于存储要被编程到包括在单元串中的存储器单元中的数据或用于存储从存储器单元读取的数据的锁存单元。根据在测试操作中存储在锁存单元中的数据，每个页缓冲器被耦合到用于存储器单元的测试操作的焊盘。

9. 发明申请

US20070213480A1 Concrete reinforcing material for improving durability of concrete structure and process for preparing the same 审中-公开
标题翻译：用于提高混凝土结构耐久性的混凝土增强材料及其制备方法
公开(公告)号：US20070213480A1
公开(公告)日：2007-09-13
申请号：US11519703
申请日：2006-09-11
申请人： Myung Cho , Young Song , Jong Kim , Jae Lim
发明人： Myung Cho , Young Song , Jong Kim , Jae Lim
IPC分类号： C08F2/00 , C08F4/00 , C08F4/16 , C08F120/18
CPC分类号： C08F220/18 , C04B41/009 , C04B41/4922 , C04B41/64 , C08F220/14 , C08F220/26 , C04B41/483 , C04B28/02
摘要： Disclosed herein is a concrete reinforcing material for improving the durability of a concrete structure. The concrete reinforcing material quickly penetrates deep into a concrete structure by simply applying the material onto the surface of a concrete structure in use and fills fine pores of the concrete structure through a sol-gel process by hydrolysis to reinforce the concrete structure and form a blocking layer, so that the concrete structure is protected from harmful substances, and at the same time, cracks are repaired, thus achieving integration of the concrete structure. Further disclosed is a process for preparing the concrete reinforcing material.
摘要翻译：本文公开了一种用于提高混凝土结构的耐久性的混凝土增强材料。混凝土增强材料通过简单地将材料施加到使用中的混凝土结构的表面上，迅速渗透到混凝土结构中，并通过溶胶 - 凝胶法水解填充混凝土结构的细孔，以增强混凝土结构并形成阻塞使混凝土结构受到有害物质的保护，同时修复裂缝，从而实现混凝土结构的一体化。还公开了一种制备混凝土增强材料的方法。

10. 发明申请

US20070251287A1 Hot rolled strip cooling device with coolant header 有权
标题翻译：带冷却液头的热轧带钢冷却装置
公开(公告)号：US20070251287A1
公开(公告)日：2007-11-01
申请号：US11648841
申请日：2006-12-28
申请人： Pil Lee , Joo Lee , Myung Cho , Hui Kwon , Sung Eom
发明人： Pil Lee , Joo Lee , Myung Cho , Hui Kwon , Sung Eom
IPC分类号： B21B27/06
CPC分类号： C21D1/667 , B21B45/0233 , C21D9/573 , C21D9/5735
摘要： The present invention discloses a coolant header for hot rolled strip cooling devices, which cools a hot rolled strip fed from a finish rolling mill. The header includes a body provided with a plurality of discharging holes formed through the lower surface of the body such that the discharging holes are arranged along the width of the hot rolled strip and at least three rows of discharging holes are arranged along the length of the hot rolled strip; a coolant pipe provided in the coolant header, with an outlet hole formed on a side surface of the coolant pipe to discharge coolant; an inclined plate placed in front of the outlet hole of the coolant pipe such that the plate is inclined downwards, thus evenly distributing the coolant discharged from the outlet hole over the entire surface of the coolant header; a perforated plate placed above the discharging holes and causing the coolant to flow uniformly; and a flow stabilizing filter placed between the discharging holes and the perforated plate and causing the coolant to flow in a stabilized laminar manner. The present invention discharges a great amount of stabilized flow coolant onto the hot rolled strip, thus maximizing the strip cooling efficiency.
摘要翻译：本发明公开了一种用于热轧带钢冷却装置的冷却液集管，其冷却从精轧机进料的热轧钢带。集管包括主体，该主体设置有穿过主体的下表面形成的多个排放孔，使得排放孔沿着热轧带的宽度布置，并且至少三排排放孔沿着热轧带材设置在所述冷却剂集管内的冷却剂管，具有形成在所述冷却剂管的侧表面上以排出冷却剂的出口孔; 倾斜板放置在冷却剂管的出口孔的前方，使得板向下倾斜，从而将从出口孔排出的冷却剂均匀地分布在冷却剂集管的整个表面上; 放置在排放孔上方并使冷却剂均匀流动的多孔板; 以及放置在排放孔和多孔板之间并使冷却剂以稳定的层流方式流动的流动稳定过滤器。本发明将大量稳定化的流动冷却剂排放到热轧带材上，从而使带钢冷却效率最大化。

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