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    • 8. 发明申请
    • Light-emitting devices and displays with improved performance
    • 具有改进性能的发光装置和显示器
    • US20090278141A1
    • 2009-11-12
    • US12313779
    • 2008-11-24
    • Seth Coe-SullivanDorai RamprasadIoannis KymissisVladimir BulovicMarshall CoxCaroline J. RoushPeter T. KazlasJonathan S. Steckel
    • Seth Coe-SullivanDorai RamprasadIoannis KymissisVladimir BulovicMarshall CoxCaroline J. RoushPeter T. KazlasJonathan S. Steckel
    • H01L33/00
    • H01L33/06B82Y20/00B82Y30/00C09K11/02C09K11/565C09K11/883H01L27/156H01L33/0029H01L33/28H01L51/5012H01L51/502H05B33/145
    • Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.
    • 公开了具有改进性能的发光装置和显示器。 发光装置包括设置在第一电极和第二电极之间的发光材料。 各种实施方案包括具有至少约2.2%的峰值外部量子效率的器件; 发射具有x大于0.63的CIE色坐标的光的装置; 当以5mA / cm 2的电流密度测量时,具有至少约2.2%的外部量子效率的器件。 还公开了包括能够在激发时发射红光的多个半导体纳米晶体的发光器件,其中该器件具有至少约1.5流明/瓦特的峰值发光效率。 还公开了一种发光器件,其包括能够在激发时发射红光的多个半导体纳米晶体,其中当以5毫安/平方厘米的电流密度测量时,该器件具有至少约1.5流明/瓦特的发光效率。 还公开了一种发光器件,其包括在激发时能够发射绿光的多个半导体纳米晶体,其中该器件具有至少约1.1%的峰值外部量子效率。 还公开了包括多个半导体纳米晶体的发光器件,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约3流明/瓦的发光效率。 进一步公开的是一种发光器件,其包括能够在激发时发出绿光的多个半导体纳米晶体,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约2%的外部量子效率。 公开了其他具有改进性能的发光装置和显示器。 还公开了制备和纯化半导体纳米晶体的方法。
    • 9. 发明授权
    • Flexible devices including semiconductor nanocrystals, arrays, and methods
    • 柔性器件包括半导体纳米晶体,阵列和方法
    • US09431623B2
    • 2016-08-30
    • US12851336
    • 2010-08-05
    • Peter T. KazlasMarshall CoxSeth Coe-SullivanIoannis Kymissis
    • Peter T. KazlasMarshall CoxSeth Coe-SullivanIoannis Kymissis
    • H01L51/50B82Y20/00H01L27/32H01L51/00H01L51/52
    • H01L51/502B82Y20/00H01L27/3293H01L51/0037H01L51/5203H01L51/5237H01L51/5246H01L51/5253H01L51/5259H01L2251/5338
    • The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals. In certain preferred embodiments, at least one charge transport layer is disposed between one of the electrodes and the layer comprising semiconductor nanocrystals.
    • 本发明涉及包括半导体纳米晶体的柔性器件,包括这种器件的阵列,包括前述的系统以及相关方法。 在一个实施例中,柔性发光器件包括柔性衬底,其包括第一电极,包含设置在衬底上的半导体纳米晶体的发射层和设置在包含半导体纳米晶体的发射层上的第二电极,其中当器件弯曲时, 包括半导体纳米晶体的发射层基本上位于器件的中性平面中。 在另一个实施例中,发光器件包括发射层,发射层包括设置在两个柔性衬底之间的半导体纳米晶体,设置在包含半导体纳米晶体的发射层上的第一电极以及设置在包含半导体纳米晶体的发射层下方的第二电极。 在某些优选实施例中,至少一个电荷传输层设置在电极之一和包含半导体纳米晶体的层之间。
    • 10. 发明申请
    • FLEXIBLE DEVICES INCLUDING SEMICONDUCTOR NANOCRYSTALS, ARRAYS, AND METHODS
    • 包括半导体纳米晶体的柔性器件,阵列和方法
    • US20110095261A1
    • 2011-04-28
    • US12851336
    • 2010-08-05
    • Peter T. KazlasMarshall CoxSeth Coe-SullivanIoannis Kymissis
    • Peter T. KazlasMarshall CoxSeth Coe-SullivanIoannis Kymissis
    • H01L33/06B82Y20/00B82Y99/00
    • H01L51/502B82Y20/00H01L27/3293H01L51/0037H01L51/5203H01L51/5237H01L51/5246H01L51/5253H01L51/5259H01L2251/5338
    • The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals. In certain preferred embodiments, at least one charge transport layer is disposed between one of the electrodes and the layer comprising semiconductor nanocrystals.
    • 本发明涉及包括半导体纳米晶体的柔性器件,包括这种器件的阵列,包括前述的系统以及相关方法。 在一个实施例中,柔性发光器件包括柔性衬底,其包括第一电极,包含设置在衬底上的半导体纳米晶体的发射层和设置在包含半导体纳米晶体的发射层上的第二电极,其中当器件弯曲时, 包括半导体纳米晶体的发射层基本上位于器件的中性平面中。 在另一个实施例中,发光器件包括发射层,发射层包括设置在两个柔性衬底之间的半导体纳米晶体,设置在包含半导体纳米晶体的发射层上的第一电极以及设置在包含半导体纳米晶体的发射层下方的第二电极。 在某些优选实施例中,至少一个电荷传输层设置在电极之一和包含半导体纳米晶体的层之间。