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1. 发明授权

US08509314B2 Method and apparatus for spatial error concealment of image 有权
标题翻译：图像空间误差隐藏的方法和装置
公开(公告)号：US08509314B2
公开(公告)日：2013-08-13
申请号：US12050305
申请日：2008-03-18
申请人： Seung-Woo Shin , Se-an Kwon
发明人： Seung-Woo Shin , Se-an Kwon
IPC分类号： H04N7/26
CPC分类号： H04N19/895 , H04N19/105 , H04N19/14 , H04N19/176 , H04N19/593 , H04N19/89
摘要： A method and apparatus for error concealment in image data including a block having an error, the method including: dividing a region that surrounds the block into a plurality of neighboring regions; separately calculating edge angles of the neighboring regions; and selectively performing directional interpolation based on the calculated edge angles.
摘要翻译：一种用于在包括具有错误的块的图像数据中的错误隐藏的方法和装置，所述方法包括：将包围所述块的区域划分为多个相邻区域; 分别计算相邻区域的边缘角度; 并且基于所计算的边缘角度选择性地执行方向插值。

2. 外观设计

USD587277S1 Transitional video image display for portable phone 有权
标题翻译：便携式手机的过渡视频图像显示
公开(公告)号：USD587277S1
公开(公告)日：2009-02-24
申请号：US29300409
申请日：2008-03-24
申请人： Kyung-Dae Park , Seung-Woo Shin , Hyung-Joo Jin
设计人： Kyung-Dae Park , Seung-Woo Shin , Hyung-Joo Jin

3. 发明申请

US20090003461A1 ERROR CONCEALING METHOD AND APPARATUS ADAPTIVE TO CHARACTERISTICS OF BLOCKS ADJACENT TO LOST BLOCK 审中-公开
标题翻译：错误的隐蔽方法和装置适用于相邻块的特征块
公开(公告)号：US20090003461A1
公开(公告)日：2009-01-01
申请号：US12105306
申请日：2008-04-18
申请人： Se-an KWON , Min-jae Lee , Seung-Woo Shin
发明人： Se-an KWON , Min-jae Lee , Seung-Woo Shin
IPC分类号： H04N7/26
CPC分类号： H04N19/117 , H04N19/137 , H04N19/14 , H04N19/176 , H04N19/895
摘要： An error concealment method and apparatus that are adaptive to characteristics of blocks adjacent to a lost block, the adaptive error concealment method including: determining one or more thresholds for selecting an error concealment method, from a plurality of error concealment methods, based on one or more of characteristics of blocks adjacent to a current block having an error; generating a temporal activity and a spatial activity of pixels adjacent to the current block; and selecting an error concealment method, from the plurality of error concealment methods, for the current block according to a result obtained by comparing the temporal activity, the one or more thresholds, and the spatial activity.
摘要翻译：一种适应于与丢失块相邻的块的特性的错误隐藏方法和装置，所述自适应错误隐藏方法包括：基于一个或多个错误隐藏方法，从多个错误隐藏方法中确定用于选择错误隐藏方法的一个或多个阈值，更多与具有错误的当前块相邻的块的特征; 产生与当前块相邻的像素的时间活动和空间活动; 以及根据通过比较所述时间活动，所述一个或多个阈值和所述空间活动而获得的结果，从所述多个错误隐藏方法中选择针对所述当前块的错误隐藏方法。

4. 发明授权

US06184077B2 Method for fabricating crown-type capacitor of semiconductor device 有权
标题翻译：制造半导体器件的冠型电容器的方法
公开(公告)号：US06184077B2
公开(公告)日：2001-02-06
申请号：US09441845
申请日：1999-11-17
申请人： Seung-Woo Shin , Yong-Sun Sohn
发明人： Seung-Woo Shin , Yong-Sun Sohn
IPC分类号： H01L218242
CPC分类号： H01L27/10844 , H01L27/10852
摘要： A method for fabricating a crown-type capacitor of a semiconductor device includes the steps of: forming a plurality of bit lines on the interlevel dielectric layer in a cell region and a periphery region of a substrate; forming a third oxide layer to fill gaps existing between the plurality of bit lines in the cell region; forming an etch-blocking layer and a first oxide layer over the entire structure obtained by forming the third oxide layer; forming a plurality of via-holes by anisotropically etching the first oxide layer, etch-blocking layer and third oxide layer, to expose the interlevel dielectric layer in the cell region; forming a silicon conductive layer, for forming a lower electrode of the crown-type capacitor, over the cell region of the structure having the plurality of via-holes to make electrical contact with the interlevel dielectric layer, and then forming a second oxide layer; completing the lower electrode by anisotropically etching the second oxide layer and the silicon conductive layer, to expose the first oxide layer; and removing the first and second oxide layers.
摘要翻译：一种用于制造半导体器件的冠型电容器的方法包括以下步骤：在衬底的单元区域和外围区域中的层间电介质层上形成多个位线; 形成第三氧化物层以填充存在于所述单元区域中的所述多个位线之间的间隙; 在通过形成所述第三氧化物层获得的整个结构上形成蚀刻阻挡层和第一氧化物层; 通过各向异性蚀刻第一氧化物层，蚀刻阻挡层和第三氧化物层来形成多个通孔，以暴露电池区域中的层间电介质层; 在具有多个通孔的结构的单元区域上形成用于形成冠型电容器的下电极的硅导电层，以与层间电介质层电接触，然后形成第二氧化物层; 通过各向异性蚀刻第二氧化物层和硅导电层来完成下电极，以露出第一氧化物层; 以及去除所述第一和第二氧化物层。

5. 发明授权

US08517845B2 Torsional vibration damper 有权
标题翻译：扭转振动阻尼器
公开(公告)号：US08517845B2
公开(公告)日：2013-08-27
申请号：US13345815
申请日：2012-01-09
申请人： Seung-Woo Shin
发明人： Seung-Woo Shin
IPC分类号： F16D3/76
CPC分类号： F16F15/126 , Y10T403/1608
摘要： A torsional vibration damper which comprises of a hub 12 having a central hole 3 to be inserted on the crankshaft and being formed to have a recess opened on one side, a disc 4 extending from the hub 2, a rim 5 being bent and extending from the periphery of the disc 4, a rubber layer 6 attached on the outer surface of the rim 5, and a ring member 8 or pulley inserted on the outer surface of the rubber layer 6, wherein a polygonal recess 10 is formed on the connecting area between the hub 2 and the disc 4 so that the polygonal recess 10 surrounds the hub 2.
摘要翻译：一种扭转振动阻尼器，包括具有中心孔3的轮毂12，该中心孔3插入在曲轴上并形成为具有在一侧开口的凹部，从轮毂2延伸的盘4，弯曲并从盘4的周边，安装在轮辋5的外表面上的橡胶层6和插入橡胶层6的外表面的环形构件8或滑轮，其中在连接区域上形成多边形凹部10 在轮毂2和盘4之间，使得多边形凹部10围绕轮毂2。

6. 发明授权

US08207606B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08207606B2
公开(公告)日：2012-06-26
申请号：US12485965
申请日：2009-06-17
申请人： Seung-Woo Shin
发明人： Seung-Woo Shin
IPC分类号： H01L23/053 , H01L23/12
CPC分类号： H01L23/3192 , H01L23/3114 , H01L23/525 , H01L23/562 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05169 , H01L2224/05569 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/16225 , H01L2224/94 , H01L2224/11 , H01L2924/00014 , H01L2924/013
摘要： A semiconductor device includes a semiconductor chip having a top surface on which a first conductive pad is disposed, a bottom surface opposite to the top surface, and a side surface connecting the top and bottom surfaces to each other, a first reinforcement layer on the top surface of the semiconductor chip, a first absorption layer between the top surface of the semiconductor chip and the first reinforcement layer to absorb a stress resulting from a difference in thermal expansion coefficient between the first reinforcement layer and the semiconductor chip, and a connection terminal disposed on the first reinforcement layer and electrically connected to the first conductive pad.
摘要翻译：一种半导体器件包括具有顶表面的半导体芯片，第一导电焊盘设置在该顶表面上，与顶表面相对的底表面和将顶表面和底表面彼此连接的侧表面，顶部上的第一加强层半导体芯片的表面，在半导体芯片的顶表面和第一加强层之间的第一吸收层，以吸收由第一加强层和半导体芯片之间的热膨胀系数的差异引起的应力，以及布置的连接端子在第一加强层上并电连接到第一导电焊盘。

7. 发明申请

US20110045666A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110045666A1
公开(公告)日：2011-02-24
申请号：US12614991
申请日：2009-11-09
申请人： Sung-Jin WHANG , Moon-Sig Joo , Yong-Seok Eun , Kwon Hong , Bo-Min Seo , Kyoung-Eun Chang , Seung-Woo Shin
发明人： Sung-Jin WHANG , Moon-Sig Joo , Yong-Seok Eun , Kwon Hong , Bo-Min Seo , Kyoung-Eun Chang , Seung-Woo Shin
IPC分类号： H01L21/8234
CPC分类号： H01L21/823443 , H01L21/28052 , H01L21/28114 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/31051 , H01L21/31111 , H01L21/32139 , H01L27/10873 , H01L27/11521 , H01L27/11568 , H01L29/42376 , H01L29/4933
摘要： A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成栅极图案，形成覆盖每个栅极图案的顶部和侧壁的导电层，在导电层上形成用于硅化工艺的金属层，以及硅化导电层和栅极图案使用金属层。

8. 发明申请

US20100195565A1 Apparatus and method for timing synchronization in a communication system 有权
标题翻译：在通信系统中定时同步的装置和方法
公开(公告)号：US20100195565A1
公开(公告)日：2010-08-05
申请号：US12658038
申请日：2010-02-01
申请人： Seung-Woo Shin , Ki-Hyun Kim
发明人： Seung-Woo Shin , Ki-Hyun Kim
IPC分类号： H04J3/08
CPC分类号： H04J3/0644 , H04J3/0682 , H04L43/0852
摘要： An apparatus is capable of restoring a clock of a second node in a communication system with a symmetric network construction of a first node that is capable of receiving a Global Positioning System (GPS) signal, and the second node that is not capable of receiving a GPS signal. The method includes identifying synchronization information received from the first node, determining a delay with the first node, generating a clock using the synchronization information and delay, removing a clock phase being out of a reference range in a phase identification interval, dividing the phase identification interval into at least two subdivision intervals, and removing a clock phase being out of a normal operation range of a phase in each subdivision interval.
摘要翻译：一种装置能够恢复具有能够接收全球定位系统（GPS）信号的第一节点的对称网络结构的通信系统中的第二节点的时钟，以及不能够接收 GPS信号。该方法包括：识别从第一节点接收的同步信息，确定与第一节点的延迟，使用同步信息和延迟生成时钟，在相位识别间隔中移除时钟相位超出参考范围，将相位识别间隔到至少两个细分间隔，并且去除在每个细分间隔中的相位的正常操作范围之外的时钟相位。

9. 外观设计

USD595302S1 Video image display for portable phone 有权
公开(公告)号：USD595302S1
公开(公告)日：2009-06-30
申请号：US29300411
申请日：2008-03-24
申请人： Kyung-Dae Park , Seung-Woo Shin , Tae-Won Um , Hyung-Joo Jin
设计人： Kyung-Dae Park , Seung-Woo Shin , Tae-Won Um , Hyung-Joo Jin

10. 发明申请

US20120047457A1 METHOD AND APPARATUS FOR SEARCHING CONTENTS 审中-公开
标题翻译：搜索目录的方法和装置
公开(公告)号：US20120047457A1
公开(公告)日：2012-02-23
申请号：US13211784
申请日：2011-08-17
申请人： Jeong-Hun Park , Seung-Woo Shin , Young-Joon Ahn
发明人： Jeong-Hun Park , Seung-Woo Shin , Young-Joon Ahn
IPC分类号： G06F3/048
CPC分类号： G09B29/106
摘要： A contents searching apparatus that includes a level setting unit configured to group contents according to specified regional standards and set an expansion level to at least one group based on contents distribution, and an interface unit configured to select one of the at least one group to which the expansion level is set. The contents searching apparatus also includes a control unit providing contents of the selected group according to the expansion level of the selected group by enlarging a map.
摘要翻译：一种内容搜索装置，包括：级别设置单元，被配置为根据指定的区域标准对内容进行分组，并且基于内容分发将扩展级别设置为至少一个组;以及接口单元，被配置为选择至少一个组中的一个，扩展级别设置。内容搜索装置还包括控制单元，其通过放大地图来根据所选择的组的扩展级别提供所选择的组的内容。

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