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1. 发明申请

US20130170285A1 Drive Method for Memory Element and Storage Device Using Memory Element 有权
标题翻译：使用内存元素的内存元素和存储设备的驱动方法
公开(公告)号：US20130170285A1
公开(公告)日：2013-07-04
申请号：US13819247
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2213/79 , H01L27/101
摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.
摘要翻译：在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

2. 发明授权

US09130159B2 Method of fabricating element including nanogap electrodes 有权
标题翻译：制造纳米胶片电极元件的方法
公开(公告)号：US09130159B2
公开(公告)日：2015-09-08
申请号：US12756522
申请日：2010-04-08
申请人： Shigeo Furuta , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
发明人： Shigeo Furuta , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
IPC分类号： H01H11/00 , H01H65/00 , H01L45/00
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/16 , Y10T29/49082 , Y10T29/49105
摘要： Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.
摘要翻译：公开了一种具有纳米隙电极的元件的制造方法，其包括第一电极，设置在第一电极上方的第二电极和设置在第一电极和第二电极之间的间隙，间隙为纳米级，以允许电阻状态通过在第一电极和第二电极之间施加预定电压进行切换，该方法包括：形成第一电极; 在所述第一电极的上表面上形成间隔物; 形成与间隔物的上表面接触的第二电极; 并移除间隔物以形成间隙。

3. 发明申请

US20130155757A1 Drive Method for Memory Element, and Storage Device Using Memory Element 有权
标题翻译：内存元素的驱动方法和使用内存元素的存储设备
公开(公告)号：US20130155757A1
公开(公告)日：2013-06-20
申请号：US13819217
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C13/00
CPC分类号： G11C13/0002 , G11C13/003 , G11C13/0069 , G11C17/16 , G11C2013/009 , G11C2213/33 , G11C2213/52 , G11C2213/74 , G11C2213/79
摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.
摘要翻译：存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

4. 发明授权

US09190145B2 Drive method for memory element and storage device using memory element 有权
标题翻译：使用存储元件的存储元件和存储设备的驱动方法
公开(公告)号：US09190145B2
公开(公告)日：2015-11-17
申请号：US13819247
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C11/00 , G11C13/00 , H01L27/10
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2213/79 , H01L27/101
摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.
摘要翻译：在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

5. 发明授权

US09135990B2 Drive method for memory element, and storage device using memory element 有权
标题翻译：存储器元件的驱动方法，以及使用存储元件的存储器件
公开(公告)号：US09135990B2
公开(公告)日：2015-09-15
申请号：US13819217
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C11/00 , G11C13/00 , G11C17/16
CPC分类号： G11C13/0002 , G11C13/003 , G11C13/0069 , G11C17/16 , G11C2013/009 , G11C2213/33 , G11C2213/52 , G11C2213/74 , G11C2213/79
摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.
摘要翻译：存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

6. 发明申请

US20100257726A1 Method of Fabricating Element Including Nanogap Electrodes 有权
标题翻译：包括纳米石墨电极的元件制造方法
公开(公告)号：US20100257726A1
公开(公告)日：2010-10-14
申请号：US12756522
申请日：2010-04-08
申请人： Shigeo FURUTA , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
发明人： Shigeo FURUTA , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
IPC分类号： H01C17/00
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/16 , Y10T29/49082 , Y10T29/49105
摘要： Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.
摘要翻译：公开了一种具有纳米隙电极的元件的制造方法，其包括第一电极，设置在第一电极上方的第二电极和设置在第一电极和第二电极之间的间隙，间隙为纳米级，以允许电阻状态通过在第一电极和第二电极之间施加预定电压进行切换，该方法包括：形成第一电极; 在所述第一电极的上表面上形成间隔物; 形成与间隔物的上表面接触的第二电极; 并移除间隔物以形成间隙。

7. 发明申请

US20100175991A1 Enzyme Electrode and Enzyme Sensor 审中-公开
标题翻译：酶电极和酶传感器
公开(公告)号：US20100175991A1
公开(公告)日：2010-07-15
申请号：US12602738
申请日：2008-06-13
申请人： Takeshi Shimomura , Touru Sumiya , Yuichiro Masuda , Masatoshi Ono , Tetsuji Itoh , Fujio Mizukami
发明人： Takeshi Shimomura , Touru Sumiya , Yuichiro Masuda , Masatoshi Ono , Tetsuji Itoh , Fujio Mizukami
IPC分类号： G01N27/26
CPC分类号： C12Q1/002 , C12Q1/001
摘要： An enzyme electrode having excellent sensitivity, excellent stability, and a longer operating life, and an enzyme sensor using the enzyme electrode are provided. The enzyme electrode includes an electrode 2, a mesoporous silica material 3 formed on the electrode 2, and enzyme 4 immobilized in a small cavity of the mesoporous silica material 3. The size of the small cavity of the mesoporous silica material 3 is set to be 0.5 to 2.0 times the size of the enzyme 4.
摘要翻译：提供具有优异的灵敏度，优异的稳定性和更长的使用寿命的酶电极和使用酶电极的酶传感器。酶电极包括电极2，形成在电极2上的介孔二氧化硅材料3和固定在介孔二氧化硅材料3的小腔中的酶4.将介孔二氧化硅材料3的小空腔的尺寸设定为酶的大小的0.5〜2.0倍。

8. 发明申请

US20090008248A1 Enzyme Electrode and Enzyme Sensor 审中-公开
标题翻译：酶电极和酶传感器
公开(公告)号：US20090008248A1
公开(公告)日：2009-01-08
申请号：US12167758
申请日：2008-07-03
申请人： Takeshi SHIMOMURA , Touru Sumiya , Yuichiro Masuda , Masatoshi Ono
发明人： Takeshi SHIMOMURA , Touru Sumiya , Yuichiro Masuda , Masatoshi Ono
IPC分类号： C12Q1/00
CPC分类号： C12Q1/001 , B82Y5/00 , G01N27/3272
摘要： Disclosed is an enzyme electrode comprising: an electrode; a carbon nanotube layer including a plurality of carbon nanotubes extending directly from the electrode and/or a metallic catalyst immobilized on the electrode; and an enzyme immobilized in the carbon nanotube layer by being sandwiched between the carbon nanotubes.
摘要翻译：公开了一种酶电极，包括：电极; 包括直接从电极延伸的多个碳纳米管和/或固定在电极上的金属催化剂的碳纳米管层; 以及通过夹在碳纳米管之间而固定在碳纳米管层中的酶。

9. 发明授权

US06452244B1 Film-like composite structure and method of manufacture thereof 失效
标题翻译：薄膜状复合结构体及其制造方法
公开(公告)号：US06452244B1
公开(公告)日：2002-09-17
申请号：US09319210
申请日：1999-08-10
申请人： Tadao Miura , Touru Sumiya , Shun-ichiro Tanaka
发明人： Tadao Miura , Touru Sumiya , Shun-ichiro Tanaka
IPC分类号： H01L27095
CPC分类号： H01L29/872 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/47 , H01L29/475
摘要： On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor layer 1, and a second area B that is interposed by an intermediate layer 3 consisting of an insulator, a metal different from the metallic layer 2 or a semiconductor different from the semiconductor layer 1 between the semiconductor 1 and the metallic layer 2, and of a thickness of 10 nm or less. The first area and the second area are different in their Schottky currents, further in their Schottky barrier heights. Any one of the respective areas A and B has an area of nanometer level, and the respective interfaces in each of the areas A and B have an essentially uniform potential barrier, respectively. Such a film-like composite structure contributes to a minute semiconductor device of nanometer level and realization of a new functional device.
摘要翻译：在由半导体单晶等的基板构成的半导体层1上形成厚度为20nm以下的金属层2。金属层2包括与半导体层1直接接触的第一区域A和由绝缘体，不同于金属层2的金属或不同于半导体的半导体的中间层3插入的第二区域B 层1在半导体1和金属层2之间，厚度为10nm以下。第一个区域和第二个区域的肖特基电流在其肖特基势垒高度方面是不同的。各区域A和B中的任一个具有纳米级的面积，并且各区域A和B中的各个界面分别具有基本均匀的势垒。这种膜状复合结构有助于纳米级的微小半导体器件和新功能器件的实现。

10. 发明授权

US07300712B2 Magnetic sensor and position detector 有权
标题翻译：磁传感器和位置检测器
公开(公告)号：US07300712B2
公开(公告)日：2007-11-27
申请号：US10689754
申请日：2003-10-20
申请人： Masaaki Kusumi , Mitsuru Ohno , Michio Okano , Hideki Nakamori , Touru Sumiya , Akitaka Tsunogae , Tomoyuki Nakada , Teruyuki Miura , Yoshihiko Ohkawara
发明人： Masaaki Kusumi , Mitsuru Ohno , Michio Okano , Hideki Nakamori , Touru Sumiya , Akitaka Tsunogae , Tomoyuki Nakada , Teruyuki Miura , Yoshihiko Ohkawara
IPC分类号： G11B5/127
CPC分类号： G01R33/09 , G01R33/02 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171 , Y10T428/1193 , Y10T428/31721
摘要： In a magnetic sensor (1) including a substrate (10) having a magnetism-sensitive element (11) formed thereon, a hard membrane (14) is formed on the outermost surface, an organic film (13) to relieve the stress caused by the hard membrane (14) is formed under the hard membrane (14), and an inorganic film (12) to relieve the stress caused by the organic film (13) is formed between the organic film (13) and magnetism-sensitive element (11). Also, an intermediate film formed from an element having a large force of bonding to carbon may be formed between the organic film (13) and hard membrane (14). Thus, the magnetic sensor (MR sensor, for example) can be protected against an external shock.
摘要翻译：在包括其上形成有磁敏元件（11）的基板（10）的磁传感器（1）中，在最外表面上形成有硬膜（14），以有效的薄膜（13）来减轻由在所述硬膜（14）的下方形成有所述硬膜（14），在所述有机膜（13）和所述感磁元件（13）之间形成有机膜（13）产生的应力的无机膜（12） 11）。此外，可以在有机膜（13）和硬膜（14）之间形成由具有大的结合力的元素形成的中间膜。因此，可以保护磁传感器（例如MR传感器）免受外部冲击。

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