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1. 发明授权

US08330193B2 Silicon oxide film, production method therefor and semiconductor device having gate insulation film using the same 有权
标题翻译：氧化硅膜及其制造方法以及使用其的具有栅极绝缘膜的半导体器件
公开(公告)号：US08330193B2
公开(公告)日：2012-12-11
申请号：US12131249
申请日：2008-06-02
申请人： Shigeru Mori , Hiroshi Tanabe , Jun Tanaka
发明人： Shigeru Mori , Hiroshi Tanabe , Jun Tanaka
IPC分类号： H01L29/76
CPC分类号： H01L29/4908
摘要： The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes CO2 in the film, wherein, when an integrated intensity of a peak is expressed by (peak width at half height)×(peak height) in an infrared absorption spectrum, the integrated intensity of a CO2-attributed peak which appears in the vicinity of a wave number of 2,340 cm−1 is 8E-4 times or more with respect to the integrated intensity of an SiO2-attributed peak which appears in the vicinity of a wave number of 1,060 cm−1.
摘要翻译：本发明提供一种作为栅绝缘膜的高性能氧化硅膜和具有优异电特性的半导体器件。根据本发明的氧化硅膜包括膜中的CO 2，其中当红外吸收光谱中的峰值的积分强度（半高峰宽度）×（峰高））表示的积分强度时，出现在2,340cm-1波数附近的二氧化碳归属峰相对于在1,060cm -1的波数附近出现的SiO 2归属峰的积分强度为8E-4倍以上， 1。

2. 发明申请

US20070012924A1 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070012924A1
公开(公告)日：2007-01-18
申请号：US11483561
申请日：2006-07-11
申请人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
发明人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
IPC分类号： H01L29/76
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
摘要翻译：在绝缘基板上形成基底层，以局部方式形成半导体层。然后形成栅极绝缘膜以覆盖半导体层，并且栅极电极形成在栅极绝缘膜的一部分上。然后通过栅极绝缘膜将杂质注入到半导体层中，形成源极区，漏极区和LDD区。用稀氢氟酸蚀刻栅极绝缘膜。然后形成电极保护绝缘膜以覆盖栅电极，并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。因此，引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。

3. 发明授权

US08570455B2 Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus 有权
标题翻译：半导体器件，半导体器件制造方法，液晶显示器件和电子设备
公开(公告)号：US08570455B2
公开(公告)日：2013-10-29
申请号：US12934659
申请日：2009-03-30
申请人： Shigeru Mori , Isao Shouji , Hiroshi Tanabe
发明人： Shigeru Mori , Isao Shouji , Hiroshi Tanabe
IPC分类号： G02F1/136 , H01L21/336 , H01L21/62 , H01L29/66
CPC分类号： H01L29/78621 , G02F2001/13685 , H01L21/26506 , H01L21/26513
摘要： A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20 nm to 40 nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side.
摘要翻译：半导体器件包括支撑衬底; 支撑基板上的半导体膜; 半导体膜上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 以及通过将杂质元素引入半导体膜形成的源区和漏区。半导体膜的厚度在20nm〜40nm的范围内。在源极区域和沟道形成区域之间以及漏极区域和沟道形成区域之间分别设置有低浓度区域。低浓度区域的杂质浓度比源极区域和漏极区域的杂质浓度小，并且在支撑衬底侧的下表面侧区域中的杂质浓度小于上表面侧的杂质浓度对面的区域

4. 发明申请

US20110013107A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：半导体器件，半导体器件制造方法，液晶显示器件和电子设备
公开(公告)号：US20110013107A1
公开(公告)日：2011-01-20
申请号：US12934659
申请日：2009-03-30
申请人： Shigeru Mori , Isao Shouji , Hiroshi Tanabe
发明人： Shigeru Mori , Isao Shouji , Hiroshi Tanabe
IPC分类号： H01L29/786 , H01L31/112 , H01L21/336 , G02F1/015
CPC分类号： H01L29/78621 , G02F2001/13685 , H01L21/26506 , H01L21/26513
摘要： A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20 nm to 40 nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side.
摘要翻译：半导体器件包括支撑衬底; 支撑基板上的半导体膜; 半导体膜上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 以及通过将杂质元素引入半导体膜形成的源区和漏区。半导体膜的厚度在20nm〜40nm的范围内。在源极区域和沟道形成区域之间以及漏极区域和沟道形成区域之间分别设置有低浓度区域。低浓度区域的杂质浓度比源极区域和漏极区域的杂质浓度小，并且在支撑衬底侧的下表面侧区域中的杂质浓度小于上表面侧的杂质浓度对面的区域

5. 发明授权

US07582933B2 Transistor with electrode-protecting insulating film 有权
标题翻译：具有电极保护绝缘膜的晶体管
公开(公告)号：US07582933B2
公开(公告)日：2009-09-01
申请号：US11483561
申请日：2006-07-11
申请人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
发明人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
IPC分类号： H01L29/772
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
摘要翻译：在绝缘基板上形成基底层，以局部方式形成半导体层。然后形成栅极绝缘膜以覆盖半导体层，并且栅极电极形成在栅极绝缘膜的一部分上。然后通过栅极绝缘膜将杂质注入到半导体层中，形成源极区，漏极区和LDD区。用稀氢氟酸蚀刻栅极绝缘膜。然后形成电极保护绝缘膜以覆盖栅电极，并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。因此，引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。

6. 发明授权

US08334553B2 Top gate thin-film transistor, display device, and electronic apparatus 有权
标题翻译：顶栅薄膜晶体管，显示器件和电子设备
公开(公告)号：US08334553B2
公开(公告)日：2012-12-18
申请号：US13026683
申请日：2011-02-14
申请人： Shigeru Mori , Takahiro Korenari , Hiroshi Tanabe
发明人： Shigeru Mori , Takahiro Korenari , Hiroshi Tanabe
IPC分类号： H01L31/062
CPC分类号： H01L33/58 , H01L29/7833 , H01L29/78621 , H01L29/78633
摘要： A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current.
摘要翻译：制造在透明基板上的薄膜晶体管具有顶栅型晶体硅薄膜晶体管的结构，其中遮光膜，基底层，晶体硅膜，栅极绝缘膜和栅极电极膜排列成不重叠的至少一个沟道区域依次形成在透明基板上。沟道区具有沟道长度L，在晶体硅膜中形成在沟道区两侧具有LDD长度d的LDD区，源区和漏区。遮光膜在通道区域上分开。分割的遮光膜之间的间隔x等于或大于沟道长度L，并且等于或小于沟道长度L的和和LDD长度d（L + 2d）的两倍，从而允许低的制造成本和抑制的照片泄漏电流。

7. 发明授权

US07981811B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07981811B2
公开(公告)日：2011-07-19
申请号：US12508888
申请日：2009-07-24
申请人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
发明人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
IPC分类号： H01L21/31
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
摘要翻译：在绝缘基板上形成基底层，以局部方式形成半导体层。然后形成栅极绝缘膜以覆盖半导体层，并且栅极电极形成在栅极绝缘膜的一部分上。然后通过栅极绝缘膜将杂质注入到半导体层中，形成源极区，漏极区和LDD区。用稀氢氟酸蚀刻栅极绝缘膜。然后形成电极保护绝缘膜以覆盖栅电极，并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。因此，引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。

8. 发明授权

US08772067B2 Silicon substrate having textured surface, solar cell having same, and method for producing same 有权
标题翻译：具有纹理表面的硅衬底，具有其的太阳能电池及其制造方法
公开(公告)号：US08772067B2
公开(公告)日：2014-07-08
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/18 , H01L31/0236 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

9. 发明授权

US08628863B2 Indenopyrene compound and organic light-emitting device using the compound 有权
标题翻译：茚并芘化合物和使用该化合物的有机发光装置
公开(公告)号：US08628863B2
公开(公告)日：2014-01-14
申请号：US13127637
申请日：2009-11-06
申请人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
发明人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
IPC分类号： H01L51/54 , C07C25/22 , C07C13/62 , C07C211/61 , C07D213/16 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04
CPC分类号： C07C25/22 , C07C13/62 , C07C211/61 , C07C2603/18 , C07C2603/24 , C07C2603/26 , C07C2603/40 , C07C2603/48 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D213/06 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1044 , H01L51/0054 , H01L51/0058 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/5092 , H05B33/10
摘要： Provided is an organic light-emitting device having an optical output with high luminance and high color purity with extremely high efficiency. The organic light-emitting device includes an organic layer between the anode and the cathode, in which one of the anode and the cathode is a transparent electrode or a semi-transparent electrode and at least one layer of the organic layer contains at least one kind of indenopyrene compound having a specific structure.
摘要翻译：本发明提供一种具有高亮度，高纯度，高效率的光输出的有机发光装置。有机发光器件包括在阳极和阴极之间的有机层，其中阳极和阴极中的一个是透明电极或半透明电极，并且至少一层有机层包含至少一种具有特定结构的茚并芘化合物。

10. 发明申请

US20120186263A1 POWER GENERATION PLANT 有权
标题翻译：发电厂
公开(公告)号：US20120186263A1
公开(公告)日：2012-07-26
申请号：US13354698
申请日：2012-01-20
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： F02C7/22
CPC分类号： F02C3/22 , F02C3/20 , F02C3/30 , F02C7/14 , F02C7/22
摘要： A power-generation plant 10 including a gas turbine 11; a fuel-gas cooler 13; and an extraction line 24 that guides the fuel gas extracted from an intermediate stage of a fuel-gas compressor 12 to the fuel-gas cooler 13; a first level detector 61 that detects whether a level of the coolant accumulated at a bottom portion of the fuel-gas cooler 13 has reached a predetermined level; and a controller that stops the gas turbine 11 on the basis of a detection signal sent from the first level detector 61 and that outputs a command signal for stopping a coolant pump 53 that supplies the coolant to the spray nozzles 44 and 45.
摘要翻译：包括燃气轮机11的发电厂10; 燃料气体冷却器13; 以及将从燃料气体压缩机12的中间阶段抽出的燃料气体引导到燃料气体冷却器13的抽出管线24; 第一电平检测器61，其检测在燃料气体冷却器13的底部积聚的冷却水位是否达到预定水平; 以及控制器，其基于从第一电平检测器61发送的检测信号停止燃气轮机11，并且输出用于停止向喷嘴44和45供应冷却剂的冷却剂泵53的命令信号。

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