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1. 发明授权

US08168519B2 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces 有权
标题翻译：等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
公开(公告)号：US08168519B2
公开(公告)日：2012-05-01
申请号：US13101843
申请日：2011-05-05
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

2. 发明申请

US20110207307A1 PLASMA IMMERSION ION IMPLANTATION METHOD USING A PURE OR NEARLY PURE SILICON SEASONING LAYER ON THE CHAMBER INTERIOR SURFACES 有权
标题翻译：等离子体沉淀离子植入方法在室内表面上使用纯的或近乎纯的硅的季铵盐
公开(公告)号：US20110207307A1
公开(公告)日：2011-08-25
申请号：US13101843
申请日：2011-05-05
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/265
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

3. 发明授权

US07968439B2 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces 有权
标题翻译：等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
公开(公告)号：US07968439B2
公开(公告)日：2011-06-28
申请号：US12069424
申请日：2008-02-06
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

4. 发明申请

US20090197401A1 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces 有权
标题翻译：等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
公开(公告)号：US20090197401A1
公开(公告)日：2009-08-06
申请号：US12069424
申请日：2008-02-06
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/26
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

5. 发明申请

US20090162996A1 REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 有权
标题翻译：从基板上去除表面掺杂物
公开(公告)号：US20090162996A1
公开(公告)日：2009-06-25
申请号：US11963034
申请日：2007-12-21
申请人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
发明人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
IPC分类号： H01L21/263
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

6. 发明申请

US20110256691A1 REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 审中-公开
标题翻译：从基板上去除表面掺杂物
公开(公告)号：US20110256691A1
公开(公告)日：2011-10-20
申请号：US13168738
申请日：2011-06-24
申请人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
发明人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
IPC分类号： H01L21/322
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

7. 发明授权

US08900405B2 Plasma immersion ion implantation reactor with extended cathode process ring 有权
标题翻译：具有扩展阴极工艺环的等离子体浸没离子注入反应器
公开(公告)号：US08900405B2
公开(公告)日：2014-12-02
申请号：US11985579
申请日：2007-11-14
申请人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
发明人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32412
摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
摘要翻译：本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

8. 发明授权

US07989329B2 Removal of surface dopants from a substrate 有权
标题翻译：从基底去除表面掺杂物
公开(公告)号：US07989329B2
公开(公告)日：2011-08-02
申请号：US11963034
申请日：2007-12-21
申请人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
发明人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
IPC分类号： H01L21/38
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

9. 发明申请

US20090120367A1 Plasma immersion ion implantation reactor with extended cathode process ring 有权
标题翻译：具有扩展阴极工艺环的等离子体浸没离子注入反应器
公开(公告)号：US20090120367A1
公开(公告)日：2009-05-14
申请号：US11985579
申请日：2007-11-14
申请人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
发明人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
IPC分类号： C23C16/513
CPC分类号： H01J37/32642 , H01J37/32412
摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
摘要翻译：本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

10. 发明授权

US08709924B2 Method for conformal plasma immersed ion implantation assisted by atomic layer deposition 有权
标题翻译：通过原子层沉积辅助等离子体沉积离子注入的方法
公开(公告)号：US08709924B2
公开(公告)日：2014-04-29
申请号：US13038199
申请日：2011-03-01
申请人： Hiroji Hanawa , Seon-Mee Cho , Majeed A. Foad
发明人： Hiroji Hanawa , Seon-Mee Cho , Majeed A. Foad
IPC分类号： H01L21/205 , H01L21/22
CPC分类号： H01L21/2236 , C23C16/45536 , C23C16/505 , C23C16/56
摘要： Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.
摘要翻译：本发明的实施例提供了一种用于在衬底的表面上形成共形掺杂层的新型设备和方法。将衬底提供到处理室，并且通过等离子体沉积，原子层沉积或等离子体辅助原子层沉积沉积掺杂剂源材料层。然后对衬底进行热处理以激活并将掺杂剂扩散到衬底表面中。

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