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1. 发明申请

US20120202944A1 POLYLACTIC ACID STEREOCOMPLEX, METHOD FOR PRODUCTION THEREOF, AND NUCLEATING AGENT FOR POLYLACTIC ACID RESIN 有权
标题翻译：聚酸酯立体异构体，其生产方法和聚氨酯树脂的核化剂
公开(公告)号：US20120202944A1
公开(公告)日：2012-08-09
申请号：US13390747
申请日：2010-08-19
申请人： Shinichiro Ochiai , Tatsuya Takamoto , Sadayuki Kobayashi
发明人： Shinichiro Ochiai , Tatsuya Takamoto , Sadayuki Kobayashi
IPC分类号： C08L67/04
CPC分类号： C08L67/04 , B29C47/0004 , B29C47/6056 , B29C47/6087 , B29C47/92 , B29C2947/92695 , B29C2947/92704 , B29C2947/92714 , C08J3/005 , C08J2367/04 , C08K5/0008 , C08K5/0016 , C08K5/0083 , C08L2205/02 , Y10T428/2982 , C08L2666/18
摘要： A polylactic acid stereocomplex has a crystal melting peak temperature of 215° C. or more, wherein the crystal melting peak is a single peak and has a peak half width of 12° C. or less, and a crystal melting enthalpy of 60 J/g or more as measured by differential scanning calorimetry. The polylactic acid stereocomplex has a high melting point, good heat resistance, and a high level of mechanical properties and chemical resistance. The method for producing a polylactic acid stereocomplex includes chaotic mixing of 30 to 70 parts by weight of (A) poly-L-lactic acid and 30 to 70 parts by weight of (B) poly-D-lactic acid based on 100 parts by weight of the total of (A) poly-L-lactic acid and (B) poly-D-lactic acid.
摘要翻译：聚乳酸立体络合物的结晶熔融峰温度为215℃以上，其中，结晶熔融峰为单峰，半峰宽为12℃以下，结晶熔融焓为60J / g或更高，通过差示扫描量热法测量。聚乳酸立体络合物具有高熔点，良好的耐热性和高水平的机械性能和耐化学性。聚乳酸立体络合物的制造方法包括：（A）聚-L-乳酸30〜70重量份，（B）聚-D-乳酸30〜70重量份混合混合，100重量份（A）聚-L-乳酸和（B）聚-D-乳酸的总重量。

2. 发明授权

US09045635B2 Polylactic acid stereocomplex, method for production thereof, and nucleating agent for polylactic acid resin 有权
标题翻译：聚乳酸立体络合物，其制造方法和聚乳酸树脂的成核剂
公开(公告)号：US09045635B2
公开(公告)日：2015-06-02
申请号：US13390747
申请日：2010-08-19
申请人： Shinichiro Ochiai , Tatsuya Takamoto , Sadayuki Kobayashi
发明人： Shinichiro Ochiai , Tatsuya Takamoto , Sadayuki Kobayashi
IPC分类号： C08L67/04 , C08J3/00 , B29C47/60 , B29C47/92 , C08K3/00 , C08K5/00 , B29C47/00
CPC分类号： C08L67/04 , B29C47/0004 , B29C47/6056 , B29C47/6087 , B29C47/92 , B29C2947/92695 , B29C2947/92704 , B29C2947/92714 , C08J3/005 , C08J2367/04 , C08K5/0008 , C08K5/0016 , C08K5/0083 , C08L2205/02 , Y10T428/2982 , C08L2666/18
摘要： A polylactic acid stereocomplex has a crystal melting peak temperature of 215° C. or more, wherein the crystal melting peak is a single peak and has a peak half width of 12° C. or less, and a crystal melting enthalpy of 60 J/g or more as measured by differential scanning calorimetry. The polylactic acid stereocomplex has a high melting point, good heat resistance, and a high level of mechanical properties and chemical resistance. The method for producing a polylactic acid stereocomplex includes chaotic mixing of 30 to 70 parts by weight of (A) poly-L-lactic acid and 30 to 70 parts by weight of (B) poly-D-lactic acid based on 100 parts by weight of the total of (A) poly-L-lactic acid and (B) poly-D-lactic acid.
摘要翻译：聚乳酸立体络合物的结晶熔融峰温度为215℃以上，其中，结晶熔融峰为单峰，半峰宽为12℃以下，结晶熔融焓为60J / g或更高，通过差示扫描量热法测量。聚乳酸立体络合物具有高熔点，良好的耐热性和高水平的机械性能和耐化学性。聚乳酸立体络合物的制造方法包括：（A）聚-L-乳酸30〜70重量份，（B）聚-D-乳酸30〜70重量份混合混合，100重量份（A）聚-L-乳酸和（B）聚-D-乳酸的总重量。

3. 发明申请

US20060180198A1 Solar cell, solar cell string and method of manufacturing solar cell string 审中-公开
标题翻译：太阳能电池，太阳能电池串和制造太阳能电池串的方法
公开(公告)号：US20060180198A1
公开(公告)日：2006-08-17
申请号：US11351253
申请日：2006-02-10
申请人： Tatsuya Takamoto , Takaaki Agui , Hidetoshi Washio , Naoki Takahashi
发明人： Tatsuya Takamoto , Takaaki Agui , Hidetoshi Washio , Naoki Takahashi
IPC分类号： H01L31/00
CPC分类号： H01L31/0687 , H01L31/02008 , H01L31/0504 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a first compound semiconductor stacked body with an n-type compound semiconductor layer and a p-type compound semiconductor layer in contact with each other, the first compound semiconductor stacked body has a first electrode of a first polarity and a second electrode of a second polarity, and surfaces of the first electrode and the second electrode are exposed to the same side. A solar cell string using the solar cells and a method of manufacturing the solar cell string are further provided.
摘要翻译：太阳能电池包括具有相互接触的n型化合物半导体层和p型化合物半导体层的第一化合物半导体层叠体，第一化合物半导体层叠体具有第一极性的第一电极和第二电极第二极性的第一电极和第二电极的表面暴露于同一侧。还提供了使用太阳能电池的太阳能电池串和制造太阳能电池串的方法。

4. 发明申请

US20060054900A1 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof 审中-公开
公开(公告)号：US20060054900A1
公开(公告)日：2006-03-16
申请号：US11220908
申请日：2005-09-08
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L33/00
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.

5. 发明授权

US07635638B2 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof 有权
标题翻译：复合半导体器件外延生长衬底，半导体器件及其制造方法
公开(公告)号：US07635638B2
公开(公告)日：2009-12-22
申请号：US11976863
申请日：2007-10-29
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L21/46
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.
摘要翻译：一种化合物半导体器件外延生长衬底，其中半导体衬底，由与衬底的材料不同的材料制成的衬底保护层，可能使半导体衬底分离的中间层和可能的化合物半导体器件层，以及通过外延生长形成的化合物半导体器件层依次层叠; 以及使用通过从该化合物半导体器件外延生长衬底分离半导体衬底，衬底保护层和中间层而获得的化合物半导体器件层的半导体器件; 以及这些的制造方法。

6. 发明授权

US09054254B2 Solar cell and method of manufacturing solar cell 有权
标题翻译：太阳能电池及制造太阳能电池的方法
公开(公告)号：US09054254B2
公开(公告)日：2015-06-09
申请号：US12918621
申请日：2009-02-16
申请人： Hiroyuki Juso , Tatsuya Takamoto
发明人： Hiroyuki Juso , Tatsuya Takamoto
IPC分类号： H01L31/0224 , H01L31/0468 , H01L31/0687
CPC分类号： H01L31/0687 , H01L31/022425 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a rear surface electrode layer a semiconductor layer formed on a surface of rear surface electrode layer a front surface electrode layer formed on a surface of semiconductor layer and a support layer on a surface of rear surface electrode layer at a side opposite the side where semiconductor layer is formed. Semiconductor layer includes at least one p-n junction. A plurality of through holes are provided, which through holes are cavities connecting support layer openings provided on a surface of support layer at a side opposite the side where rear surface electrode layer is formed with semiconductor layer openings provided on a surface of semiconductor layer at a side opposite the side where rear surface electrode layer is formed. Front surface electrode layer is formed in a region where semiconductor layer openings are not provided. A method of manufacturing the solar cell is also disclosed.
摘要翻译：太阳能电池包括后表面电极层，形成在背面电极层的表面上的半导体层，形成在半导体层的表面上的前表面电极层和与背面电极层相反侧的表面电极层的表面上的支撑层一侧形成半导体层。半导体层包括至少一个p-n结。提供多个通孔，该通孔是连接支撑层开口的空腔，支撑层开口设置在支撑层的与形成有背面电极层的一侧相反一侧的表面上，半导体层开口设置在半导体层的表面上在与形成背面电极层的一侧相反的一侧。前面电极层形成在不设置半导体层开口的区域中。还公开了一种制造太阳能电池的方法。

7. 发明授权

US07488890B2 Compound solar battery and manufacturing method thereof 有权
标题翻译：复合太阳能电池及其制造方法
公开(公告)号：US07488890B2
公开(公告)日：2009-02-10
申请号：US10805419
申请日：2004-03-22
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/1892 , H01L31/03046 , H01L31/0687 , H01L31/078 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： On a surface of a GaAs substrate, layers to be a top cell are formed by epitaxial growth. On the top cell, layers to be a bottom cell are formed. Thereafter, on a surface of the bottom cell, a back surface electrode is formed. Thereafter, a glass plate is adhered to the back surface electrode by wax. Then, the GaAs substrate supported by the glass plate is dipped in an alkali solution, whereby the GaAs substrate is removed. Thereafter, a surface electrode is formed on the top cell. Finally the glass plate is separated from the back surface electrode. In this manner, a compound solar battery that improves efficiency of conversion to electric energy can be obtained.
摘要翻译：在GaAs衬底的表面上，通过外延生长形成作为顶部电池的层。在顶部单元上，形成作为底部单元的层。此后，在底部电池的表面上形成背面电极。此后，通过蜡将玻璃板粘附到背面电极。然后，将由玻璃板支撑的GaAs衬底浸入碱溶液中，从而去除GaAs衬底。此后，在顶部电池上形成表面电极。最后，玻璃板与背面电极分离。以这种方式，可以获得提高转换成电能的效率的复合太阳能电池。

8. 发明申请

US20100279456A1 Compound solar and manufacturing method thereof 审中-公开
标题翻译：复合太阳能及其制造方法
公开(公告)号：US20100279456A1
公开(公告)日：2010-11-04
申请号：US12232294
申请日：2008-09-15
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L31/0248
CPC分类号： H01L31/1892 , H01L31/03046 , H01L31/0687 , H01L31/078 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： On a surface of a GaAs substrate, layers to be a top cell are formed by epitaxial growth. On the top cell, layers to be a bottom cell are formed. Thereafter, on a surface of the bottom cell, a back surface electrode is formed. Thereafter, a glass plate is adhered to the back surface electrode by wax. Then, the GaAs substrate supported by the glass plate is dipped in an alkali solution, whereby the GaAs substrate is removed. Thereafter, a surface electrode is formed on the top cell. Finally the glass plate is separated from the back surface electrode. In this manner, a compound solar battery that improves efficiency of conversion to electric energy can be obtained.
摘要翻译：在GaAs衬底的表面上，通过外延生长形成作为顶部电池的层。在顶部单元上，形成作为底部单元的层。此后，在底部电池的表面上形成背面电极。此后，通过蜡将玻璃板粘附到背面电极。然后，将由玻璃板支撑的GaAs衬底浸入碱溶液中，从而去除GaAs衬底。此后，在顶部电池上形成表面电极。最后，玻璃板与背面电极分离。以这种方式，可以获得提高转换成电能的效率的复合太阳能电池。

9. 发明申请

US20080070388A1 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof 有权
标题翻译：复合半导体器件外延生长衬底，半导体器件及其制造方法
公开(公告)号：US20080070388A1
公开(公告)日：2008-03-20
申请号：US11976863
申请日：2007-10-29
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L21/20
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.
摘要翻译：一种化合物半导体器件外延生长衬底，其中半导体衬底，由与衬底的材料不同的材料制成的衬底保护层，可能使半导体衬底分离的中间层和可能的化合物半导体器件层，以及通过外延生长形成的化合物半导体器件层依次层叠; 以及使用通过从该化合物半导体器件外延生长衬底分离半导体衬底，衬底保护层和中间层而获得的化合物半导体器件层的半导体器件; 以及这些的制造方法。

10. 发明授权

US06300558B1 Lattice matched solar cell and method for manufacturing the same 有权
标题翻译：晶格匹配的太阳能电池及其制造方法
公开(公告)号：US06300558B1
公开(公告)日：2001-10-09
申请号：US09553495
申请日：2000-04-20
申请人： Tatsuya Takamoto , Hiroshi Kurita , Takaaki Agui , Eiji Ikeda
发明人： Tatsuya Takamoto , Hiroshi Kurita , Takaaki Agui , Eiji Ikeda
IPC分类号： H01L31068
CPC分类号： H01L31/0735 , Y02E10/544 , Y02P70/521
摘要： A solar cell comprises at least a germanium (Ge) substrate, buffer layers formed on the germanium substrate, a first InxGa1-xAs layer of first conductivity type formed on the buffer layers, and a second InxGa1-xAs layer of second conductivity type formed on the first InxGa1-xAs layer to form pn junction. Because the composition x of In contained in the first InxGa1-xAs layer and the second InxGa1-xAs layer is in a range of 0.005≦x≦0.015, the inexpensive and high conversion efficiency solar cell can be achieved.
摘要翻译：太阳能电池至少包括锗（Ge）衬底，形成在锗衬底上的缓冲层，形成在缓冲层上的第一导电类型的第一In x Ga 1-x As层和形成在第二导电类型上的第二导电类型的第二In x Ga 1-x As层第一个In x Ga 1-x As层形成pn结。因为包含在第一In x Ga 1-x As层和第二In x Ga 1-x As层中的In的组成x在0.005 <= x <= 0.015的范围内，所以可以实现廉价且高转换效率的太阳能电池。

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