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1. 发明授权

US07728710B2 Electronic parts board and method of producing the same 失效
标题翻译：电子零件板及其制造方法
公开(公告)号：US07728710B2
公开(公告)日：2010-06-01
申请号：US10541459
申请日：2004-02-05
申请人： Shinji Mizuno , Koji Mitsui , Katsutoshi Yanoshita , Shinichi Suzuki , Takashi Shinoki , Kazutaka Nakagome , Naoki Fukuda , Kozo Morita , Daisuke Makino
发明人： Shinji Mizuno , Koji Mitsui , Katsutoshi Yanoshita , Shinichi Suzuki , Takashi Shinoki , Kazutaka Nakagome , Naoki Fukuda , Kozo Morita , Daisuke Makino
IPC分类号： H01C10/32
CPC分类号： B29C45/1418 , B29C45/14467 , B29C45/14639 , B29L2031/3406 , H01C10/32 , H01C10/48 , H05K1/0393 , H05K1/167 , H05K3/0014 , H05K3/0058 , Y10T29/49082 , Y10T428/24917
摘要： An electronic component substrate (1-1) includes an insulating base (10) and a flexible circuit board (20) mounted on the insulating base (10). The flexible circuit board (20) is a synthetic resin film provided thereon with terminal patterns (29) and a conductor pattern (25) whose surface is slidingly contacted with a slider. The insulating base (10) is a synthetic resin molded piece. The flexible circuit board (20) is insert-molded to the insulating base (10). The electronic component substrate (1-1) is produced by preparing the flexible circuit board (20) and first and second mold members (41, 45) having a cavity (C1) with a shape that corresponds to the external shape of the electronic component substrate (1-1). Then, the flexible circuit board (20) is accommodated in the cavity (C1) between the first and second mold members (41,45), and the cavity (C1) is filled with a molten molding resin. After the molding resin has solidified, the first and second mold members (41, 45) are removed.
摘要翻译：电子部件基板（1-1）具有安装在绝缘基体（10）上的绝缘基体（10）和柔性电路基板（20）。柔性电路板（20）是其上设置有端子图案（29）的合成树脂膜和表面与滑块滑动接触的导体图案（25）。绝缘基座（10）是合成树脂模制件。柔性电路板（20）被嵌入成型到绝缘基座（10）。电子部件基板（1-1）通过制备柔性电路板（20）和具有空腔（C1）的第一和第二模具部件（41,45）制成，其形状对应于电子部件的外部形状基板（1-1）。然后，柔性电路板（20）容纳在第一和第二模具构件（41,45）之间的空腔（C1）中，并且空腔（C1）填充有熔融模制树脂。在模制树脂固化之后，移除第一和第二模具构件（41,45）。

2. 发明申请

US20060040094A1 Electronic parts board and method of producing the same 失效
标题翻译：电子零件板及其制造方法
公开(公告)号：US20060040094A1
公开(公告)日：2006-02-23
申请号：US10541459
申请日：2004-02-05
申请人： Shinji Mizuno , Koji Mitsui , Katsutoshi Yanoshita , Shinichi Suzuki , Takashi Shinoki , Kazutaka Nakagawa , Naoki Fukuda , Kozo Morita , Daisuke Makino
发明人： Shinji Mizuno , Koji Mitsui , Katsutoshi Yanoshita , Shinichi Suzuki , Takashi Shinoki , Kazutaka Nakagawa , Naoki Fukuda , Kozo Morita , Daisuke Makino
IPC分类号： B29C70/88 , B32B3/00 , B29C45/14 , H01G13/00
CPC分类号： B29C45/1418 , B29C45/14467 , B29C45/14639 , B29L2031/3406 , H01C10/32 , H01C10/48 , H05K1/0393 , H05K1/167 , H05K3/0014 , H05K3/0058 , Y10T29/49082 , Y10T428/24917
摘要： An electronic component substrate 1-1 includes an insulating base 10 and a flexible circuit board 20 mounted on the insulating base 10. The flexible circuit board 20 is a synthetic resin film provided thereon with terminal patterns 29 and a conductor pattern 25 whose surface is slidingly contacted with a slider. The insulating base 10 is a synthetic resin molded piece. The flexible circuit board 20 is insert-molded to the insulating base 10. The electronic component substrate 1-1 is produced by preparing the flexible circuit board 20 and first and second mold members 41 and 45 having a cavity C1 with a shape that corresponds to the external shape of the electronic component substrate 1-1. Then, the flexible circuit board 20 is accommodated in the cavity C1 between the first and second mold members 41 and 45, and a molten molding resin is filled into the cavity C1. After the filled molding resin has been solidified, the first and second mold members 41 and 45 are removed.
摘要翻译：电子元件基板1-1包括绝缘基座10和安装在绝缘基座10上的柔性电路板20.柔性电路板20是其上设置有端子图案29的合成树脂膜和表面滑动的导体图案25 与滑块联系。绝缘基座10是合成树脂模制件。柔性电路板20被插入模制到绝缘基座10.电子部件基板1通过制备柔性电路板20和具有空腔C 1的第一和第二模具构件41和45来制造，该腔体具有对应于然后，将柔性电路板20容纳在第一和第二模具构件41和45之间的空腔C 1中，并将熔融的模制树脂填充到空腔C 1中在填充模塑树脂已经固化之后，第一和第二模具构件41和45被去除。

3. 发明授权

US08248629B2 Image forming apparatus with a power mode control section for allocating a printout for a reserved low-key print setting job 失效
标题翻译：图像形成装置，具有功率模式控制部分，用于为保留的低调打印设置作业分配打印输出
公开(公告)号：US08248629B2
公开(公告)日：2012-08-21
申请号：US12215020
申请日：2008-06-23
申请人： Naoki Fukuda
发明人： Naoki Fukuda
IPC分类号： G06K15/00
CPC分类号： G06F3/1285 , G03G15/5004 , G03G15/5087 , G03G2215/00126 , G06F3/1204 , G06F3/1208 , G06F3/1263
摘要： A job managing section acquires an operational status of a standby print job when a determination that a job having been accepted by a job accepting section is a reserved low-key print setting job is made, as a result of a determination by a reserved setting determining section, and also allocates a printout for the reserved low-key print setting job to an available time slot based on the acquired operational status. As a result, the printout for the reserved low-key print setting job can be executed in an available time slot which is different from a time slot for the standby print job. Accordingly, mixing of printed sheets related to a plurality of print jobs can be prevented as much as possible, and a contribution to an improvement in convenience at the user-side can be made.
摘要翻译：作为通过预约设定决定的判断结果，当作业接收部接受的作业是保留低音打印设定作业时，作业管理部取得待机打印作业的动作状态部分，并且还根据获取的操作状态将保留的低调打印设置作业的打印输出分配给可用的时隙。结果，可以在与待机打印作业的时隙不同的可用时隙中执行用于保留的低调打印设置作业的打印输出。因此，可以尽可能地防止与多个打印作业相关的打印纸的混合，并且可以对用户侧的便利性的改善作出贡献。

4. 发明申请

US20050040452A1 Method for fabricating semiconductor integrated circuit 有权
公开(公告)号：US20050040452A1
公开(公告)日：2005-02-24
申请号：US10959634
申请日：2004-10-07
申请人： Yoshitaka Nakamura , Tsuyoshi Tamaru , Naoki Fukuda , Hidekazu Goto , Isamu Asano , Hideo Aoki , Keizo Kawakita , Satoru Yamada , Katsuhiko Tanaka , Hiroshi Sakuma , Masayoshi Hirasawa
发明人： Yoshitaka Nakamura , Tsuyoshi Tamaru , Naoki Fukuda , Hidekazu Goto , Isamu Asano , Hideo Aoki , Keizo Kawakita , Satoru Yamada , Katsuhiko Tanaka , Hiroshi Sakuma , Masayoshi Hirasawa
IPC分类号： H01L21/8242 , H01L23/522 , H01L29/76
CPC分类号： H01L27/10852 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

5. 发明授权

US06492730B1 Method for fabricating semiconductor integrated circuit 有权
标题翻译：制造半导体集成电路的方法
公开(公告)号：US06492730B1
公开(公告)日：2002-12-10
申请号：US09480480
申请日：2000-01-11
申请人： Yoshitaka Nakamura , Tsuyoshi Tamaru , Naoki Fukuda , Hidekazu Goto , Isamu Asano , Hideo Aoki , Keizo Kawakita , Satoru Yamada , Katsuhiko Tanaka , Hiroshi Sakuma , Masayoshi Hirasawa
发明人： Yoshitaka Nakamura , Tsuyoshi Tamaru , Naoki Fukuda , Hidekazu Goto , Isamu Asano , Hideo Aoki , Keizo Kawakita , Satoru Yamada , Katsuhiko Tanaka , Hiroshi Sakuma , Masayoshi Hirasawa
IPC分类号： H01L2348
CPC分类号： H01L27/10852 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.
摘要翻译：根据以下步骤形成半导体器件。通过CVD法将TiN膜71和W膜72沉积在包括通孔66内部的氧化硅膜64上，然后将氧化硅膜64上的W膜72和TiN膜71回蚀仅留下通孔66的内部并形成插头73.然后，将TiN膜74，Al合金膜75和Ti膜76沉积在包括插塞73的表面的氧化硅膜64上，通过溅射法，然后对Ti膜76，Al合金膜75和TiN膜74进行图案化以形成第二层布线77和78。

6. 发明授权

US06399438B2 Method of manufacturing semiconductor integrated circuit device having a capacitor 有权
标题翻译：具有电容器的半导体集成电路器件的制造方法
公开(公告)号：US06399438B2
公开(公告)日：2002-06-04
申请号：US09828201
申请日：2001-04-09
申请人： Masayoshi Saito , Yoshitaka Nakamura , Hidekazu Goto , Keizo Kawakita , Satoru Yamada , Toshihiro Sekiguchi , Isamu Asano , Yoshitaka Tadaki , Takuya Fukuda , Masayuki Suzuki , Tsuyoshi Tamaru , Naoki Fukuda , Hideo Aoki , Masayoshi Hirasawa
发明人： Masayoshi Saito , Yoshitaka Nakamura , Hidekazu Goto , Keizo Kawakita , Satoru Yamada , Toshihiro Sekiguchi , Isamu Asano , Yoshitaka Tadaki , Takuya Fukuda , Masayuki Suzuki , Tsuyoshi Tamaru , Naoki Fukuda , Hideo Aoki , Masayoshi Hirasawa
IPC分类号： H01L218242
CPC分类号： H01L21/76855 , H01L21/28518 , H01L21/31604 , H01L21/76801 , H01L21/76828 , H01L21/76837 , H01L21/76843 , H01L21/76856 , H01L21/7687 , H01L27/10814 , H01L27/10885 , H01L27/10894 , H01L28/40
摘要： In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta2O5 (tantalum oxide) film 46, the portions of bit lines BL and first-layer interconnect lines 23 to 26 of a peripheral circuit which are in contact with at least an underlying silicon oxide film 28 are formed of a W film, the bit lines BL and the interconnect lines 23 to 26 being arranged below the information storing capacitive element C, whereby the adhesion at the interface between the bit lines BL and the interconnect lines 23 to 26 and the silicon oxide film is improved in terms of high-temperature heat treatment to be performed when the capacitive insulating film is being formed.
摘要翻译：在具有电容器的位线结构的DRAM中，信息存储电容元件C的电容绝缘膜由诸如Ta 2 O 5（氧化钽）膜46的高电介质材料形成，位线BL和第一 - 与W膜形成的与外部电路至少底层的氧化硅膜28接触的层间布线23〜26，位线BL和布线23〜26配置在信息存储电容元件C的下方从而在形成电容绝缘膜时进行的高温热处理方面提高了位线BL与布线23〜26之间界面处的粘附性和氧化硅膜。

7. 发明授权

US6028360A Semiconductor integrated circuit device in which a conductive film is formed over a trap film which in turn is formed over a titanium film 失效
标题翻译：半导体集成电路器件，其中导电膜形成在捕获膜上，其又形成在钛膜上
公开(公告)号：US6028360A
公开(公告)日：2000-02-22
申请号：US106074
申请日：1998-06-29
申请人： Yoshitaka Nakamura , Tsuyoshi Tamaru , Naoki Fukuda , Hidekazu Goto , Isamu Asano , Hideo Aoki , Keizo Kawakita , Satoru Yamada , Katsuhiko Tanaka , Hiroshi Sakuma , Masayoshi Hirasawa
发明人： Yoshitaka Nakamura , Tsuyoshi Tamaru , Naoki Fukuda , Hidekazu Goto , Isamu Asano , Hideo Aoki , Keizo Kawakita , Satoru Yamada , Katsuhiko Tanaka , Hiroshi Sakuma , Masayoshi Hirasawa
IPC分类号： H01L21/8242 , H01L23/522 , H01L23/48 , H01L27/108
CPC分类号： H01L27/10852 , H01L23/5226 , H01L2924/0002
摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.
摘要翻译：根据以下步骤形成半导体器件。通过CVD法将TiN膜71和W膜72沉积在包括通孔66内部的氧化硅膜64上，然后将氧化硅膜64上的W膜72和TiN膜71回蚀仅留下通孔66的内部并形成插头73.然后，将TiN膜74，Al合金膜75和Ti膜76沉积在包括插塞73的表面的氧化硅膜64上，通过溅射法，然后对Ti膜76，Al合金膜75和TiN膜74进行图案化以形成第二层布线77和78。

8. 发明授权

US5773449A Thioquinolone compounds which have useful pharmaceutical activity 失效
标题翻译：具有有用的药物活性的硫醌类化合物
公开(公告)号：US5773449A
公开(公告)日：1998-06-30
申请号：US809722
申请日：1997-04-07
申请人： Masataka Konishi , Naoki Fukuda , Yukio Oku , Hiroaki Yamazaki , Kazuhiro Imaizumi , Hideshi Kobayashi
发明人： Masataka Konishi , Naoki Fukuda , Yukio Oku , Hiroaki Yamazaki , Kazuhiro Imaizumi , Hideshi Kobayashi
IPC分类号： C07D215/36 , C07D215/38 , C07D221/08 , C07D401/12 , C07D471/04 , C07D491/04 , C07D491/048 , A61K31/47
CPC分类号： C07D401/12 , C07D215/36 , C07D215/38 , C07D221/08 , C07D471/04 , C07D491/04
摘要： Disclosed is a thioquinolone derivative which exhibits highly selective antibacterial activity against Helicobacter pylori.
摘要翻译： PCT No.PCT / JP95 / 02052 Sec。 371日期1997年4月7日 102（e）日期1997年4月7日PCT提交1995年10月6日PCT公布。公开号WO96 / 11187 日期1996年4月18日公开是对幽门螺杆菌表现出高选择性抗菌活性的硫喹酮酮衍生物。

9. 发明申请

US20080256277A1 Processing apparatus and processing module 失效
标题翻译：处理装置和处理模块
公开(公告)号：US20080256277A1
公开(公告)日：2008-10-16
申请号：US11979270
申请日：2007-10-31
申请人： Fuyuta Sato , Naoki Fukuda
发明人： Fuyuta Sato , Naoki Fukuda
IPC分类号： G06F13/18
CPC分类号： G06F12/084 , G06F15/167 , G06F2212/1056
摘要： A processing apparatus has a master processing module and a plurality of slave processing modules. The master processing module has a master recording unit and a slave recording unit recording part of the data recorded in the master recording unit. The slave processing modules access the master processing module when it is necessary to access the data recorded in the master recording unit. When the data to be accessed from one slave processing module is recorded in the slave recording unit, the master processing module transmits the data to be accessed, from the slave recording unit to the one slave processing module. In the processing apparatus such as a base transceiver station communicating with transceivers such as mobile telephones, a reduction in the overall cost of the apparatus and an efficient internal communication are realized, and the overall processing time is reduced.
摘要翻译：处理装置具有主处理模块和多个从属处理模块。主处理模块具有记录主记录单元中记录的数据的一部分的主记录单元和从属记录单元。当需要访问主记录单元中记录的数据时，从属处理模块访问主处理模块。当从一个从属处理模块要访问的数据被记录在从属记录单元中时，主处理模块将从从属记录单元向一个从属处理模块发送要访问的数据。在与诸如移动电话的收发器进行通信的基站收发台等处理装置中，实现了设备的整体成本的降低和有效的内部通信，并且整体处理时间减少。

10. 发明申请

US20060205742A1 Heterocyclic compounds and cerebral function improvers containing the same as the active ingredient 有权
标题翻译：含有与活性成分相同的杂环化合物和脑功能改善剂
公开(公告)号：US20060205742A1
公开(公告)日：2006-09-14
申请号：US11433416
申请日：2006-05-15
申请人： Seiichiro Kawashima , Toshiyuki Matsuno , Naoki Fukuda , Kenichi Saitoh , Yoshimasa Yamaguchi , Masaya Higashi
发明人： Seiichiro Kawashima , Toshiyuki Matsuno , Naoki Fukuda , Kenichi Saitoh , Yoshimasa Yamaguchi , Masaya Higashi
IPC分类号： A61K31/519 , C07D498/02 , C07D487/04 , C07D471/04 , A61K31/4745 , A61K31/43
CPC分类号： C07D471/04 , C07D487/04 , C07D513/04
摘要： Heterocyclic compound represented by the formula I wherein represents or the like; R1 represents hydrogen atom, C1-C6 alkyl or benzyloxy; R2 represents methyl or nil; R3 represents hydrogen atom, C1-C6 alkyl, C2-C6 alkenyl, C3-C8 cycloalkyl or —CH2R5 [wherein R5 represents phenyl (which may be substituted with C1-C6 alkyl, halogen atom or cyano)] or thienyl; R4 represents C1-C6 alkyl, C2-C6 alkenyl, C3-C8 cycloalkyl or —CH2R6 [wherein R6 represents phenyl (which may be substituted with C1-C6alkyl, halogen atom or cyano), naphtyl or thienyl]; or R3 is coupled with R4.
摘要翻译：由式I表示的杂环化合物，其中表示等; R 1表示氢原子，C 1 -C 6烷基或苄氧基; R 2表示甲基或无; R 3表示氢原子，C 1 -C 6烷基，C 2 -C 6烷基，C 1 -C 6烷基，C 1 -C 6烷基， / SUB-烯基，C 3 -C 8环烷基或-CH 2 R 5 [其中R _{5代表苯基（其可以被C 1 -C 6烷基，卤素原子或氰基）]或噻吩基取代; R 4代表C 1 -C 6烷基，C 2 -C 6烷基，C 2 -C 6烷基，C 2 -C 6烷基，C 2 -C 6烷基，烯基，C 3 -C 8环烷基或-CH 2 R 6 [其中R 6' / SUB表示苯基（其可以被C 1 -C 6烷基，卤素原子或氰基取代），萘基或噻吩基]; 或R 3与R 4连接。}

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