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1. 发明申请

US20120007113A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120007113A1
公开(公告)日：2012-01-12
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。第一部分的带隙能量小于第二部分的带隙能量。

2. 发明申请

US20120032215A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120032215A1
公开(公告)日：2012-02-09
申请号：US13034329
申请日：2011-02-24
申请人： Shinji SAITO , Jongil Hwang , Shinya Nunoue
发明人： Shinji SAITO , Jongil Hwang , Shinya Nunoue
IPC分类号： H01L33/60 , H01L33/32
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.
摘要翻译：一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。端面垂直于脊条形状的延伸方向。端面层具有比有源层宽的带隙。端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

3. 发明申请

US20100148203A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100148203A1
公开(公告)日：2010-06-17
申请号：US12638354
申请日：2009-12-15
申请人： Rei HASHIMOTO , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
发明人： Rei HASHIMOTO , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/644 , H01S5/02292 , H01S5/32341
摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.
摘要翻译：提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件荧光体层的。

4. 发明申请

US20090185589A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20090185589A1
公开(公告)日：2009-07-23
申请号：US12408810
申请日：2009-03-23
申请人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
发明人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
IPC分类号： H01S3/10 , F21V9/16 , G02F1/35
CPC分类号： H01L33/507 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/021 , H01S5/0213 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/327 , H01S5/34333 , H01S5/42 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
摘要翻译：一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与激发光的波长不同的光的荧光材料，并且板状波长转换构件为整个发射可见光。

5. 发明授权

US08649408B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08649408B2
公开(公告)日：2014-02-11
申请号：US12874440
申请日：2010-09-02
申请人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/02461
摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
摘要翻译：根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及一对由绝缘体制成的掩埋层，以埋置凹槽。沟槽的底面随着条纹的距离增加而变浅。

6. 发明授权

US08457167B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US08457167B2
公开(公告)日：2013-06-04
申请号：US12873821
申请日：2010-09-01
申请人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Jongil Hwang , Masaki Tohyama , Shinya Nunoue
发明人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Jongil Hwang , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.
摘要翻译：实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。凹槽的深度小于GaN衬底的厚度。该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。在半导体激光器件中，GaN衬底和半导体层的总厚度为100μm以上，并且，突起的顶面与凹部的底面之间的距离为5μm以上且50μm以下。。

7. 发明授权

US08130803B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08130803B2
公开(公告)日：2012-03-06
申请号：US12299186
申请日：2008-09-04
申请人： Jongil Hwang , Shinji Saito , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Shinya Nunoue
IPC分类号： H01S3/04 , G02B6/00 , H01L33/00
CPC分类号： H01S5/0228 , F21K9/61 , F21Y2115/10 , H01S5/005 , H01S5/22 , H01S5/4056
摘要： A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light.
摘要翻译：一种发光器件包括：具有用于发射激光的第一发射面的半导体激光元件; 导光体，其被埋置在所述支撑基部的凹部中，引导从所述半导体激光元件发射的激光，并且具有入射面入射到所述入射面;以及第二射出面，导光体发射，导光体的入射面为激光的入射角在由激光的行进方向形成的平面内的布鲁斯特角度的预定范围内的曲面，激光发光点的短轴; 以及散射在导光体中的荧光体，吸收激光，并且发射具有与激光波长不同的波长的光。

8. 发明申请

US20110216799A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20110216799A1
公开(公告)日：2011-09-08
申请号：US12874440
申请日：2010-09-02
申请人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/02461
摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
摘要翻译：根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及一对由绝缘体制成的掩埋层，以埋置凹槽。沟槽的底面随着条纹的距离增加而变浅。

9. 发明申请

US20110216554A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110216554A1
公开(公告)日：2011-09-08
申请号：US12876675
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
IPC分类号： F21V7/22
CPC分类号： F21V7/22
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。发光器件具有发射激光束的半导体激光二极管。该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射，导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

10. 发明授权

US08526477B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08526477B2
公开(公告)日：2013-09-03
申请号：US13034329
申请日：2011-02-24
申请人： Shinji Saito , Jongil Hwang , Shinya Nunoue
发明人： Shinji Saito , Jongil Hwang , Shinya Nunoue
IPC分类号： H01S5/028 , H01S5/22 , H01S5/00
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.
摘要翻译：一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。端面垂直于脊条形状的延伸方向。端面层具有比有源层宽的带隙。端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

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