专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09007736B2 Power module 有权
标题翻译：电源模块
公开(公告)号：US09007736B2
公开(公告)日：2015-04-14
申请号：US13267224
申请日：2011-10-06
申请人： Shiori Uota , Takahiro Inoue , Koji Tamaki , Shoichi Orita
发明人： Shiori Uota , Takahiro Inoue , Koji Tamaki , Shoichi Orita
IPC分类号： H02H3/00 , H03K17/18 , H03K17/082
CPC分类号： H03K17/18 , H03K17/0828 , H03K2217/0027
摘要： A power module includes a current sensing circuit in which a transistor includes an emitter connected to a sense emitter of a current sense element of an IGBT and a base connected to ground, a current sensing resistor including one end thereof connected to a collector of the transistor and the other end thereof connected to a common connection portion. The power module detects, as a current sensing voltage, a potential difference generated by the current sensing resistor based on the common connection portion as a reference, compares the current sensing voltage with a predetermined threshold voltage, and determines whether or not an overcurrent flows through the IGBT according to a magnitude relation therebetween.
摘要翻译：电源模块包括电流检测电路，其中晶体管包括连接到IGBT的电流感测元件的感测发射极和连接到地的基极的发射极，电流感测电阻器的一端连接到晶体管的集电极并且其另一端连接到公共连接部分。功率模块以公共连接部作为基准，将电流检测电阻产生的电位差作为电流检测电压进行检测，将电流检测电压与规定的阈值电压进行比较，判断过电流是否流过 IGBT根据它们之间的大小关系。

2. 发明授权

US09182772B2 Power device control circuit and power device circuit 有权
标题翻译：电力设备控制电路和电源设备电路
公开(公告)号：US09182772B2
公开(公告)日：2015-11-10
申请号：US13691811
申请日：2012-12-02
申请人： Shiori Uota , Takahiro Inoue , Koji Tamaki , Shoichi Orita
发明人： Shiori Uota , Takahiro Inoue , Koji Tamaki , Shoichi Orita
IPC分类号： H03B1/00 , H03K3/00 , G05F1/66 , H03K3/012
CPC分类号： G05F1/66 , H02M1/08 , H02M1/44 , H02M2001/0054 , H03K3/012 , H03K17/0406 , H03K17/162 , H03K17/168 , H03K2217/0036 , Y02B70/1491
摘要： A power device control circuit enters a gate driving signal into a gate terminal of a power device. The power device control circuit includes: a control signal input circuit that receives a power device control signal for control of the power device; a driving system control circuit connected to the control signal input circuit; a driving circuit with a plurality of driving systems, the driving circuit driving the power device in response to a driving circuit control signal received from the driving system control circuit; and a timer circuit that makes switching between the driving systems in response to the driving circuit control signal after elapse of a given period of time from receipt of a predetermined signal, specifically the power device control signal, thereby changing the driving power of the driving system control circuit to drive the power device.
摘要翻译：功率器件控制电路将栅极驱动信号输入到功率器件的栅极端子。功率器件控制电路包括：控制信号输入电路，其接收用于控制功率器件的功率器件控制信号; 连接到所述控制信号输入电路的驱动系统控制电路; 具有多个驱动系统的驱动电路，所述驱动电路响应于从所述驱动系统控制电路接收的驱动电路控制信号来驱动所述功率器件; 以及定时器电路，其在从接收到预定信号（特别是功率器件控制信号）经过给定时间段之后响应于驱动电路控制信号在驱动系统之间切换，由此改变驱动系统的驱动功率控制电路驱动电源设备。

3. 发明授权

US07755168B2 Semiconductor device provided with floating electrode 有权
标题翻译：具有浮置电极的半导体器件
公开(公告)号：US07755168B2
公开(公告)日：2010-07-13
申请号：US11738039
申请日：2007-04-20
申请人： Tomohide Terashima , Shiori Uota
发明人： Tomohide Terashima , Shiori Uota
IPC分类号： H01L29/70
CPC分类号： H01L29/735 , H01L29/0692 , H01L29/0821
摘要： A semiconductor device has a first conductivity-type first semiconductor region, a second conductivity-type second semiconductor region and a second conductivity-type third semiconductor region both located on or above the first semiconductor region, a second conductivity-type fourth semiconductor region between the second semiconductor region and the third semiconductor region, and a first conductivity-type fifth semiconductor region between the third semiconductor region and the fourth semiconductor region. The fourth semiconductor region and the fifth semiconductor region are electrically connected by a conductive member. A distance between the fourth semiconductor region and the third semiconductor region is larger than a width of the fourth semiconductor region.
摘要翻译：半导体器件具有位于第一半导体区域上方或上方的第一导电型第一半导体区域，第二导电型第二半导体区域和第二导电型第三半导体区域，位于第一半导体区域之间的第二导电型第四半导体区域第二半导体区域和第三半导体区域，以及在第三半导体区域和第四半导体区域之间的第一导电类型的第五半导体区域。第四半导体区域和第五半导体区域通过导电构件电连接。第四半导体区域和第三半导体区域之间的距离大于第四半导体区域的宽度。

4. 发明申请

US20080093707A1 SEMICONDUCTOR DEVICE PROVIDED WITH FLOATING ELECTRODE 有权
标题翻译：具有浮动电极的半导体器件
公开(公告)号：US20080093707A1
公开(公告)日：2008-04-24
申请号：US11738039
申请日：2007-04-20
申请人： Tomohide Terashima , Shiori Uota
发明人： Tomohide Terashima , Shiori Uota
IPC分类号： H01L29/70
CPC分类号： H01L29/735 , H01L29/0692 , H01L29/0821
摘要： A semiconductor device has a first conductivity-type first semiconductor region, a second conductivity-type second semiconductor region and a second conductivity-type third semiconductor region both located on or above the first semiconductor region, a second conductivity-type fourth semiconductor region between the second semiconductor region and the third semiconductor region, and a first conductivity-type fifth semiconductor region between the third semiconductor region and the fourth semiconductor region. The fourth semiconductor region and the fifth semiconductor region are electrically connected by a conductive member. A distance between the fourth semiconductor region and the third semiconductor region is larger than a width of the fourth semiconductor region.
摘要翻译：半导体器件具有位于第一半导体区域上方或上方的第一导电型第一半导体区域，第二导电型第二半导体区域和第二导电型第三半导体区域，位于第一半导体区域之间的第二导电型第四半导体区域第二半导体区域和第三半导体区域，以及在第三半导体区域和第四半导体区域之间的第一导电类型的第五半导体区域。第四半导体区域和第五半导体区域通过导电构件电连接。第四半导体区域和第三半导体区域之间的距离大于第四半导体区域的宽度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式