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1. 发明申请

US20080217752A1 Functional Device Package 有权
标题翻译：功能器件封装
公开(公告)号：US20080217752A1
公开(公告)日：2008-09-11
申请号：US12028108
申请日：2008-02-08
申请人： Shohei Hata , Naoki Matsushima , Eiji Sakamoto , Ryoji Okada , Takanori Aono , Atsushi Kazama , Toshiki Kida
发明人： Shohei Hata , Naoki Matsushima , Eiji Sakamoto , Ryoji Okada , Takanori Aono , Atsushi Kazama , Toshiki Kida
IPC分类号： H01L23/02
CPC分类号： B81C1/00269 , B81C2203/019 , H01L2924/0002 , H01L2924/00
摘要： A packaging structure for hermitically sealing a functional device by solder connection at a wafer level in which a first Si substrate having a concave portion metallized on its internal surface and a second Si substrate metallized at a position opposed to said concave portion are used, the metallization applied to the internal surface of the concave portion of the first Si substrate and the metallization applied to the second Si substrate at the position opposed to the concave portion are connected by molten solder to hermetically seal the functional device between the first Si substrate and the second Si substrate, whereby the wettability of the solder for the two Si substrates is improved, the bondability between the Si substrates is enhanced, and the yield at which the package is manufactured is improved.
摘要翻译：一种用于通过在晶片级焊接连接来密封功能器件的封装结构，其中使用在其内表面上具有金属化的凹部的第一Si衬底和在与所述凹部相对的位置上金属化的第二Si衬底，所述金属化施加到第一Si衬底的凹部的内表面，并且在与凹部相对的位置处施加到第二Si衬底的金属化通过熔融焊料连接，以将功能器件密封在第一Si衬底和第二Si衬底之间 Si衬底，由此提高了用于两个Si衬底的焊料的润湿性，提高了Si衬底之间的粘合性，并提高了制造封装的成品率。

2. 发明授权

US07939938B2 Functional device package with metallization arrangement for improved bondability of two substrates 有权
标题翻译：具有金属化布置的功能器件封装，用于改善两个衬底的粘合性
公开(公告)号：US07939938B2
公开(公告)日：2011-05-10
申请号：US12028108
申请日：2008-02-08
申请人： Shohei Hata , Naoki Matsushima , Eiji Sakamoto , Ryoji Okada , Takanori Aono , Atsushi Kazama , Toshiki Kida
发明人： Shohei Hata , Naoki Matsushima , Eiji Sakamoto , Ryoji Okada , Takanori Aono , Atsushi Kazama , Toshiki Kida
IPC分类号： H01L23/04
CPC分类号： B81C1/00269 , B81C2203/019 , H01L2924/0002 , H01L2924/00
摘要： A packaging structure for hermetically sealing a functional device by solder connection at a wafer level in which a first Si substrate having a concave portion metallized on its internal surface and a second Si substrate metallized at a position opposed to said concave portion are used, the metallization applied to the internal surface of the concave portion of the first Si substrate and the metallization applied to the second Si substrate at the position opposed to the concave portion are connected by molten solder to hermetically seal the functional device between the first Si substrate and the second Si substrate, whereby the wettability of the solder for the two Si substrates is improved, the bondability between the Si substrates is enhanced, and the yield at which the package is manufactured is improved.
摘要翻译：一种封装结构，用于通过在晶片级焊接连接来密封功能器件，其中使用在其内表面上具有金属化的凹部的第一Si衬底和在与所述凹部相对的位置上金属化的第二Si衬底，所述金属化施加到第一Si衬底的凹部的内表面，并且在与凹部相对的位置处施加到第二Si衬底的金属化通过熔融焊料连接，以将功能器件密封在第一Si衬底和第二Si衬底之间 Si衬底，由此提高了用于两个Si衬底的焊料的润湿性，提高了Si衬底之间的粘合性，并提高了制造封装的成品率。

3. 发明申请

US20100218607A1 ACCELERATION SENSOR 失效
标题翻译：加速传感器
公开(公告)号：US20100218607A1
公开(公告)日：2010-09-02
申请号：US12670964
申请日：2008-06-25
申请人： Atsushi Kazama , Masakatsu Saitoh , Ryoji Okada , Takanori Aono
发明人： Atsushi Kazama , Masakatsu Saitoh , Ryoji Okada , Takanori Aono
IPC分类号： G01P15/12
CPC分类号： G01P15/18 , G01P15/123 , G01P2015/0842 , H01L24/45 , H01L2224/32145 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/73265 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/00012
摘要： An acceleration sensor whose characteristics including sensitivity are less likely to change relative to disturbance force applied to a sensor chip. The acceleration sensor has a support frame, a weight supported within the support frame via flexible beams, semiconductor piezoresistance elements provided on the beams, and wiring interconnecting the piezoresistance elements. The acceleration sensor detects acceleration from changes in resistance of the piezoresistance elements. Stress damping sections are provided on those portions of the beams which exclude the portions where the piezoresistance elements are provided. Each stress damping section is symmetrical with respect to the point of intersection between the length center line of the beam and the width center line of the beam. When disturbance force is applied to a sensor element in the direction in which the entire each of the beams extends, the stress damping sections absorbs the disturbance force. Because stress imposed in the direction in which the entire each of the beams extends becomes minimally changeable, and the deformability of the beam also becomes difficult to change, and this reduces the change in the sensitivity of the acceleration sensor caused by disturbance force.
摘要翻译：包括灵敏度的特性的加速度传感器相对于施加到传感器芯片的干扰力不太可能改变。加速度传感器具有支撑框架，通过柔性梁支撑在支撑框架内的重物，设置在梁上的半导体压阻元件和互连压阻元件的布线。加速度传感器根据压阻元件的电阻变化来检测加速度。应力阻尼部分设置在梁的那些部分上，排除了设置压电元件的部分。每个应力阻尼部分相对于梁的长度中心线和梁的宽度中心线之间的交点相对称。当扰动力沿着每个梁的整个方向延伸的方向施加到传感器元件时，应力阻尼部分吸收扰动力。由于施加在整个梁的整个延伸方向上的应力最小可变化，并且梁的变形性也变得难以改变，并且这减小了由扰动力引起的加速度传感器的灵敏度的变化。

4. 发明申请

US20090050990A1 SEMICONDUCTOR SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体传感器装置及其制造方法
公开(公告)号：US20090050990A1
公开(公告)日：2009-02-26
申请号：US12282986
申请日：2007-08-27
申请人： Takanori Aono , Ryoji Okada , Atsushi Kazama , Yoshiaki Takada
发明人： Takanori Aono , Ryoji Okada , Atsushi Kazama , Yoshiaki Takada
IPC分类号： H01L29/84 , H01L21/58
CPC分类号： G01P15/125 , B81C1/00873 , G01C19/5719 , G01P1/023 , G01P15/0802 , G01P15/123 , G01P15/18 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2924/1461 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Provided is a semiconductor sensor device which is manufactured by an MEMS technology wherein machining technology and/or material technology is combined with semiconductor technology for detecting and measuring various physical quantities. In the semiconductor sensor device, cracks which generate in a cap chip and a molding resin are eliminated and air-tightness between a semiconductor sensor chip and the cap chip is ensured. The cracks due to vibration applied when being cut can be eliminated by having the circumference side surface of the cap chip as a wet-etched surface. Furthermore, insulation is ensured by coating the cap chip side surface with an insulating protection film.
摘要翻译：提供了一种通过MEMS技术制造的半导体传感器装置，其中加工技术和/或材料技术与用于检测和测量各种物理量的半导体技术相结合。在半导体传感器装置中，消除了在帽芯片和模塑树脂中产生的裂纹，并且确保了半导体传感器芯片和盖芯片之间的气密性。通过使盖片的圆周侧表面作为湿蚀刻表面，可以消除由于切割时施加的振动引起的裂纹。此外，通过用绝缘保护膜涂覆盖芯片侧表面来确保绝缘。

5. 发明授权

US08474318B2 Acceleration sensor 失效
标题翻译：加速度传感器
公开(公告)号：US08474318B2
公开(公告)日：2013-07-02
申请号：US12670964
申请日：2008-06-25
申请人： Atsushi Kazama , Masakatsu Saitoh , Ryoji Okada , Takanori Aono
发明人： Atsushi Kazama , Masakatsu Saitoh , Ryoji Okada , Takanori Aono
IPC分类号： G01P15/12
CPC分类号： G01P15/18 , G01P15/123 , G01P2015/0842 , H01L24/45 , H01L2224/32145 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/73265 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/00012
摘要： An acceleration sensor having a support frame, a weight supported within the support frame via flexible beams, semiconductor piezoresistance elements provided on the beams, and wiring interconnecting the piezoresistance elements. The acceleration sensor detects acceleration from changes in resistance of the piezoresistance elements. Stress damping sections are provided on those portions of the beams which exclude the portions where the piezoresistance elements are provided. Each stress damping section is symmetrical with respect to the point of intersection between the length center line of the beam and the width center line of the beam.
摘要翻译：一种加速度传感器，其具有支撑框架，通过柔性梁支撑在支撑框架内的重物，设置在梁上的半导体压阻元件和互连压阻元件的布线。加速度传感器根据压阻元件的电阻变化来检测加速度。应力阻尼部分设置在梁的那些部分上，排除了设置压电元件的部分。每个应力阻尼部分相对于梁的长度中心线和梁的宽度中心线之间的交点相对称。

6. 发明授权

US08022433B2 Semiconductor sensor device and method for manufacturing same 有权
标题翻译：半导体传感器装置及其制造方法
公开(公告)号：US08022433B2
公开(公告)日：2011-09-20
申请号：US12282986
申请日：2007-08-27
申请人： Takanori Aono , Ryoji Okada , Atsushi Kazama , Yoshiaki Takada
发明人： Takanori Aono , Ryoji Okada , Atsushi Kazama , Yoshiaki Takada
IPC分类号： H01L33/00 , H01L29/84 , H01L21/00
CPC分类号： G01P15/125 , B81C1/00873 , G01C19/5719 , G01P1/023 , G01P15/0802 , G01P15/123 , G01P15/18 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2924/1461 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Provided is a semiconductor sensor device which is manufactured by an MEMS technology wherein machining technology and/or material technology is combined with semiconductor technology for detecting and measuring various physical quantities. In the semiconductor sensor device, cracks which generate in a cap chip and a molding resin are eliminated and air-tightness between a semiconductor sensor chip and the cap chip is ensured. The cracks due to vibration applied when being cut can be eliminated by having the circumference side surface of the cap chip as a wet-etched surface. Furthermore, insulation is ensured by coating the cap chip side surface with an insulating protection film.
摘要翻译：提供了一种通过MEMS技术制造的半导体传感器装置，其中加工技术和/或材料技术与用于检测和测量各种物理量的半导体技术相结合。在半导体传感器装置中，消除了在帽芯片和模塑树脂中产生的裂纹，并且确保了半导体传感器芯片和盖芯片之间的气密性。通过使盖片的圆周侧表面作为湿蚀刻表面，可以消除由于切割时施加的振动引起的裂纹。此外，通过用绝缘保护膜涂覆盖芯片侧表面来确保绝缘。

7. 发明授权

US08438931B2 Semiconductor strain sensor 有权
标题翻译：半导体应变传感器
公开(公告)号：US08438931B2
公开(公告)日：2013-05-14
申请号：US12674419
申请日：2008-07-25
申请人： Atsushi Kazama , Ryoji Okada , Tetsurou Kawai
发明人： Atsushi Kazama , Ryoji Okada , Tetsurou Kawai
IPC分类号： G01L1/22
CPC分类号： G01L1/18 , G01B7/16 , G01L1/2293
摘要： A semiconductor strain sensor having a strain sensor chip composed of a semiconductor substrate having a piezoresistive element as a strain detection section. The semiconductor strain sensor has a stable characteristic for a long period of time and a stable conversion factor of a strain generated in the strain sensor chip corresponding to a strain of an object to be measured, within a strain range of a size to be measured. The strain sensor chip is bonded to a metal base plate with a metal bonding material. The metal base plate has two or four extending members, which protrude from a side of the strain sensor chip for attaching the strain senor chip to the object to be measured. Preferably, a groove is arranged between a metal base plate undersurface area, which corresponds to the bonding area where the strain sensor chip is bonded to the metal base plate, and the undersurfaces of the extending members, and a protruding section sandwiched by the grooves is arranged on the undersurface of the metal base plate.
摘要翻译：一种半导体应变传感器，具有由具有压阻元件的半导体基板构成的应变传感器芯片作为应变检测部。半导体应变传感器在待测尺寸的应变范围内长时间地具有稳定的特性，并且在应变传感器芯片中产生的应变对应于被测量物体的应变的稳定的转换系数。应变传感器芯片用金属接合材料接合到金属基板上。金属基板具有从应变传感器芯片的一侧突出的两个或四个延伸部件，用于将应变传感器芯片附接到待测量对象。优选地，在对应于应变传感器芯片与金属基板接合的接合区域的金属底板下表面区域和延伸构件的下表面之间布置有凹槽，以及由凹槽夹持的突出部分布置在金属底板的下表面上。

8. 发明申请

US20110227178A1 SEMICONDUCTOR STRAIN SENSOR 有权
标题翻译：半导体应变传感器
公开(公告)号：US20110227178A1
公开(公告)日：2011-09-22
申请号：US12674419
申请日：2008-07-25
申请人： Atsushi Kazama , Ryoji Okada , Tetsurou Kawai
发明人： Atsushi Kazama , Ryoji Okada , Tetsurou Kawai
IPC分类号： H01L29/84
CPC分类号： G01L1/18 , G01B7/16 , G01L1/2293
摘要： A semiconductor strain sensor having a strain sensor chip composed of a semiconductor substrate having a piezoresistive element as a strain detection section. The semiconductor strain sensor has a stable characteristic for a long period of time and a stable conversion factor of a strain generated in the strain sensor chip corresponding to a strain of an object to be measured, within a strain range of a size to be measured. The strain sensor chip is bonded to a metal base plate with a metal bonding material. The metal base plate has two or four extending members, which protrude from a side of the strain sensor chip for attaching the strain senor chip to the object to be measured. Preferably, a groove is arranged between a metal base plate undersurface area, which corresponds to the bonding area where the strain sensor chip is bonded to the metal base plate, and the undersurfaces of the extending members, and a protruding section sandwiched by the grooves is arranged on the undersurface of the metal base plate.
摘要翻译：一种半导体应变传感器，具有由具有压阻元件的半导体基板构成的应变传感器芯片作为应变检测部。半导体应变传感器在待测尺寸的应变范围内长时间地具有稳定的特性，并且在应变传感器芯片中产生的应变对应于被测量物体的应变的稳定的转换系数。应变传感器芯片用金属接合材料接合到金属基板上。金属基板具有从应变传感器芯片的一侧突出的两个或四个延伸部件，用于将应变传感器芯片附接到待测量对象。优选地，在对应于应变传感器芯片与金属基板接合的接合区域的金属底板下表面区域和延伸构件的下表面之间布置有凹槽，以及由凹槽夹持的突出部分布置在金属底板的下表面上。

9. 发明授权

US08418558B2 Acceleration sensor element and acceleration sensor having same 失效
标题翻译：加速传感器元件和加速度传感器
公开(公告)号：US08418558B2
公开(公告)日：2013-04-16
申请号：US12790136
申请日：2010-05-28
申请人： Atsushi Kazama , Masakatsu Saitoh , Ryoji Okada , Yasuhiro Hamaguchi
发明人： Atsushi Kazama , Masakatsu Saitoh , Ryoji Okada , Yasuhiro Hamaguchi
IPC分类号： G01P15/12 , G01P15/00
CPC分类号： G01P15/0802 , G01P1/023 , G01P15/123 , G01P15/18
摘要： A covered acceleration sensor element includes a support frame portion surrounding a weight portion, a plurality of flexible beam portions for connecting the weight portion to the support frame portion, and piezoresistance elements provided on the beam portions. An upper cover and a lower cover enclosing the periphery of the weight portion together with the support frame portion are joined to the face and back of the support frame portion. The support frame portion is separated by separation grooves into an inner frame and an outer frame. The plurality of inner frame support portions has flexibility. The beam portions are connected to both sides of the weight portion along the second axis and the third axis. The inner frame support portions are connected to both sides of the inner frame in a direction in which they are rotated nearly 45 degrees from the second axis and the third axis.
摘要翻译：覆盖的加速度传感器元件包括围绕重物部分的支撑框架部分，用于将重物部分连接到支撑框架部分的多个柔性梁部分和设置在梁部分上的压阻元件。与支撑框架部分一起包围重物部分的周边的上盖和下盖接合到支撑框架部分的表面和背面。支撑框架部分由分隔槽分隔成内框架和外框架。多个内框架支撑部分具有柔性。梁部分沿着第二轴线和第三轴线连接到配重部分的两侧。内框架支撑部分沿着与第二轴线和第三轴线旋转大约45度的方向连接到内框架的两侧。

10. 发明申请

US20050258735A1 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US20050258735A1
公开(公告)日：2005-11-24
申请号：US11132295
申请日：2005-05-19
申请人： Takeshi Terasaki , Atsushi Kazama , Makoto Kitano , Tatsuya Nagata , Takashi Fujimura
发明人： Takeshi Terasaki , Atsushi Kazama , Makoto Kitano , Tatsuya Nagata , Takashi Fujimura
IPC分类号： H01J29/86 , H01J29/87 , H01J31/12
CPC分类号： H01J31/123 , H01J29/87
摘要： An object of the present invention is to achieve high resolution, lightening, and thinning of a display apparatus. The display apparatus includes an anode substrate, a planar cathode substrate forming an electron emitting chamber vacuously sealed between the cathode substrate and the anode substrate, electron sources formed on the cathode substrate, phosphors formed on the anode substrate, and a vacuum seal member forming a pressure balancing chamber on the back of the electron emitting chamber side of the cathode substrate. The vacuum seal member is placed covering the back of the electron emitting chamber side, and has a shell structure for receiving the atmospheric pressure.
摘要翻译：本发明的目的是实现显示装置的高分辨率，减轻和减薄。显示装置包括阳极基板，形成在阴极基板和阳极基板之间真空密封的电子发射室的平面阴极基板，形成在阴极基板上的电子源，形成在阳极基板上的荧光体和形成在阳极基板上的真空密封部件阴极基板的电子发射室侧背面的压力平衡室。真空密封构件被覆盖在电子发射室侧的背面，并且具有用于接收大气压的壳结构。

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