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1. 发明授权

US09176353B2 Liquid crystal display device 有权
公开(公告)号：US09176353B2
公开(公告)日：2015-11-03
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
CPC分类号： G02F1/1368 , G02F1/133345 , H01L21/67207 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

2. 发明授权

US09057924B2 Liquid crystal display device 有权
公开(公告)号：US09057924B2
公开(公告)日：2015-06-16
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

3. 发明申请

US20090002591A1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20090002591A1
公开(公告)日：2009-01-01
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabrara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabrara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02F1/133345 , H01L21/67207 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
摘要翻译：本发明的目的是提出具有高质量生产率的液晶显示装置的制造方法，其具有具有高可靠电特性的薄膜晶体管。在具有反交错薄膜晶体管的液晶显示装置中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源区和漏区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。

4. 发明授权

US07812348B2 Thin-film transistor and display device 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US07812348B2
公开(公告)日：2010-10-12
申请号：US12390954
申请日：2009-02-23
申请人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
发明人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
IPC分类号： H01L27/14
CPC分类号： H01L29/78609 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78618 , H01L29/78669
摘要： A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.
摘要翻译：解决了导通状态电流和截止电流的问题的薄膜晶体管，以及能够进行高速运转的薄膜晶体管。薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极和漏极区域，其间具有间隔，以便与具有栅极绝缘层的栅电极重叠插入在栅电极和杂质半导体层之间; 添加作为受体的杂质元素的一对半导体层，与栅极电极和杂质半导体层重叠在栅极绝缘层上，并且在沟道长度方向上间隔设置; 以及与所述栅绝缘层和所述一对半导体层接触并在所述一对半导体层之间延伸的非晶半导体层。

5. 发明授权

US07786485B2 Thin-film transistor and display device 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US07786485B2
公开(公告)日：2010-08-31
申请号：US12390144
申请日：2009-02-20
申请人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
发明人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers.
摘要翻译：薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极区和漏极区，以至少部分地与栅电极重叠，栅极绝缘层介于栅电极和杂质半导体层; 一对导电层，其至少部分地与所述栅电极和所述杂质半导体层重叠在所述栅极绝缘层上方，并且在沟道长度方向上设置有间隔; 以及与所述栅极绝缘层和所述一对导电层接触并在所述一对导电层之间延伸的非晶半导体层。

6. 发明授权

US08618544B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08618544B2
公开(公告)日：2013-12-31
申请号：US13167762
申请日：2011-06-24
申请人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
发明人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

7. 发明授权

US07968880B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US07968880B2
公开(公告)日：2011-06-28
申请号：US12391398
申请日：2009-02-24
申请人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
发明人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

8. 发明授权

US08120030B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08120030B2
公开(公告)日：2012-02-21
申请号：US12633067
申请日：2009-12-08
申请人： Hiromichi Godo , Satoshi Kobayashi , Hidekazu Miyairi , Toshiyuki Isa , Shunpei Yamazaki
发明人： Hiromichi Godo , Satoshi Kobayashi , Hidekazu Miyairi , Toshiyuki Isa , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L27/12 , H01L29/04
摘要： Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more.
摘要翻译：其中半导体层被栅极电极遮挡光的底栅薄膜晶体管的截止电流减小。薄膜晶体管包括栅电极层; 第一半导体层; 第二半导体层，设置在第一半导体层上并与第一半导体层接触; 在栅极电极层和第一半导体层之间并与之接触的栅极绝缘层; 与第二半导体层接触的杂质半导体层; 以及与杂质半导体层和第一和第二半导体层部分接触的源极和漏极电极层。栅极电极层侧的第一半导体层的整个表面被栅电极层覆盖; 并且在第一半导体层与源极或漏极电极层接触的部分处的势垒为0.5eV以上。

9. 发明授权

US08633485B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08633485B2
公开(公告)日：2014-01-21
申请号：US13075436
申请日：2011-03-30
申请人： Satoshi Kobayashi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Daisuke Kawae
发明人： Satoshi Kobayashi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Daisuke Kawae
IPC分类号： H01L31/00 , H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112 , H01L21/02
CPC分类号： H01L29/41733 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided over the gate insulating film and having a microcrystalline semiconductor, a second semiconductor layer provided over the first semiconductor layer and having an amorphous semiconductor, and a source region and a drain region provided over the second semiconductor layer are provided. The first semiconductor layer has high crystallinity than the second semiconductor layer. The second semiconductor layer includes an impurity region having a conductivity type different from a conductivity type of the source region and the drain region between the source region and the drain region.
摘要翻译：提供具有高电特性和优异可靠性的薄膜晶体管的显示装置及其制造方法。栅电极，设置在栅电极上的栅极绝缘膜，设置在栅绝缘膜上并具有微晶半导体的第一半导体层，设置在第一半导体层上并具有非晶半导体的第二半导体层，以及源极区并且设置在第二半导体层上的漏极区。第一半导体层具有比第二半导体层高的结晶度。第二半导体层包括具有不同于源极区域的导电类型和源极区域与漏极区域之间的漏极区域的导电类型的杂质区域。

10. 发明授权

US08294155B2 Thin film transistor, display device having thin film transistor, and method for manufacturing the same 有权
标题翻译：薄膜晶体管，具有薄膜晶体管的显示装置及其制造方法
公开(公告)号：US08294155B2
公开(公告)日：2012-10-23
申请号：US13187584
申请日：2011-07-21
申请人： Shunpei Yamazaki , Yoshiyuki Kurokawa , Yasuhiro Jinbo , Satoshi Kobayashi , Daisuke Kawae
发明人： Shunpei Yamazaki , Yoshiyuki Kurokawa , Yasuhiro Jinbo , Satoshi Kobayashi , Daisuke Kawae
IPC分类号： H01L29/10
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.
摘要翻译：提出了具有优异电特性的薄膜晶体管，具有薄膜晶体管的显示装置，以及制造薄膜晶体管和显示装置的方法。薄膜晶体管包括形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体膜，形成在微晶半导体膜上的缓冲层，一对半导体膜，赋予一种导电型的杂质元素并且形成在缓冲层之上，并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。栅极绝缘膜或整个栅极绝缘膜的一部分和/或微晶半导体的一部分或整个微晶半导体包括用作供体的杂质元素。

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