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1. 发明授权

US11602889B2 Stereolithography apparatus and light emission control method 有权
公开(公告)号：US11602889B2
公开(公告)日：2023-03-14
申请号：US16639247
申请日：2018-08-08
申请人： SONY CORPORATION
发明人： Jugo Mitomo , Kei Satou
IPC分类号： B29C64/135 , G03F7/20 , B29C64/386 , B33Y30/00 , B29C64/277 , B29C64/393 , B33Y10/00
摘要： A stereolithography apparatus according to an embodiment of the present technology includes a light source unit, a photo-detector, and a control unit. The light source unit includes a plurality of light-emitting elements that emits light for curing a photo-curing resin. The photo-detector detects the light emitted from the light source unit. The control unit generates an amount-of-light profile indicating an amount-of-light distribution of the light on the basis of the light detected by the photo-detector and controls light emission of the plurality of light-emitting elements on the basis of the amount-of-light profile.

2. 发明授权

US11411372B2 Light emitting element and manufacturing method therefor 有权
公开(公告)号：US11411372B2
公开(公告)日：2022-08-09
申请号：US16627174
申请日：2018-04-27
申请人： Sony Corporation
发明人： Tatsushi Hamaguchi , Jugo Mitomo , Susumu Sato , Hiroshi Nakajima , Masamichi Ito , Hidekazu Kawanishi
IPC分类号： H01S5/183 , H01S5/02 , H01S5/343 , H01S5/323
摘要： A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.

3. 发明授权

US11309686B2 Surface emitting laser and method of manufacturing the same 有权
公开(公告)号：US11309686B2
公开(公告)日：2022-04-19
申请号：US16621807
申请日：2018-04-17
申请人： SONY CORPORATION
发明人： Hiroshi Nakajima , Tatsushi Hamaguchi , Jugo Mitomo , Susumu Sato , Masamichi Ito , Hidekazu Kawanishi
IPC分类号： H01S5/042 , H01S5/02 , H01S5/183 , H01S5/30 , H01S5/343
摘要： A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.

4. 发明授权

US11489314B2 Light-emitting element and method of manufacturing the same 有权
公开(公告)号：US11489314B2
公开(公告)日：2022-11-01
申请号：US17127383
申请日：2020-12-18
申请人： Sony Corporation
发明人： Susumu Sato , Tatsushi Hamaguchi , Shoichiro Izumi , Noriyuki Futagawa , Masamichi Ito , Jugo Mitomo , Hiroshi Nakajima
IPC分类号： H01S5/00 , H01S5/183 , H01S5/343 , H01S5/042
摘要： A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

5. 发明授权

US11374384B2 Light-emitting device and method of manufacturing light-emitting device 有权
公开(公告)号：US11374384B2
公开(公告)日：2022-06-28
申请号：US16617922
申请日：2018-04-16
申请人： Sony Corporation
发明人： Susumu Sato , Tatsushi Hamaguchi , Jugo Mitomo , Hiroshi Nakajima , Masamichi Ito , Hidekazu Kawanishi
IPC分类号： H01S5/183
摘要： A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.

6. 发明申请

US20140151836A1 OPTICAL SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：光学半导体设备
公开(公告)号：US20140151836A1
公开(公告)日：2014-06-05
申请号：US14173590
申请日：2014-02-05
申请人： Sony Corporation
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： H01L31/16
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.
摘要翻译：光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

7. 发明授权

US11611196B2 Light emitting element 有权
公开(公告)号：US11611196B2
公开(公告)日：2023-03-21
申请号：US16471428
申请日：2017-10-13
申请人： Sony Corporation
发明人： Tatsushi Hamaguchi , Jugo Mitomo , Hiroshi Nakajima , Masamichi Ito , Susumu Sato
IPC分类号： H01S5/183 , H01S5/02 , H01S5/343 , H01S5/042
摘要： A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

8. 发明授权

US11594859B2 Light emitting element and light emitting element array 有权
公开(公告)号：US11594859B2
公开(公告)日：2023-02-28
申请号：US16631709
申请日：2018-05-09
申请人： Sony Corporation
发明人： Jugo Mitomo , Tatsushi Hamaguchi , Hiroshi Nakajima , Masamichi Ito , Susumu Sato
IPC分类号： H01S5/183 , H01S5/042 , H01S5/02
摘要： A light emitting element includes: a laminated structure 20 obtained by laminating a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a first light reflecting layer 41 disposed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 disposed on a second surface side of the second compound semiconductor layer 22; and light convergence/divergence changing means 50. The first light reflecting layer 41 is formed on a concave mirror portion 43. The second light reflecting layer 42 has a flat shape. When light generated in the active layer 23 is emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing means 50 is different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means 50.

9. 发明授权

US11571851B2 Stereolithography apparatus and light emission control method 有权
公开(公告)号：US11571851B2
公开(公告)日：2023-02-07
申请号：US16639247
申请日：2018-08-08
申请人： SONY CORPORATION
发明人： Jugo Mitomo , Kei Satou
IPC分类号： B29C64/135 , G03F7/20 , B29C64/386 , B33Y30/00 , B29C64/277 , B29C64/393 , B33Y10/00
摘要： A stereolithography apparatus according to an embodiment of the present technology includes a light source unit, a photo-detector, and a control unit. The light source unit includes a plurality of light-emitting elements that emits light for curing a photo-curing resin. The photo-detector detects the light emitted from the light source unit. The control unit generates an amount-of-light profile indicating an amount-of-light distribution of the light on the basis of the light detected by the photo-detector and controls light emission of the plurality of light-emitting elements on the basis of the amount-of-light profile.

10. 发明授权

US11031752B2 Surface-emitting laser and electronic apparatus 有权
公开(公告)号：US11031752B2
公开(公告)日：2021-06-08
申请号：US16463309
申请日：2017-10-19
申请人： Sony Corporation
发明人： Tatsushi Hamaguchi , Jugo Mitomo , Hiroshi Nakajima , Masamichi Ito , Susumu Sato , Noriyuki Futagawa
IPC分类号： H01S5/183 , H01S5/187 , H01S5/125
摘要： A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.

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