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1. 发明授权

US10734255B2 Substrate cleaning method, substrate cleaning system and memory medium 有权
公开(公告)号：US10734255B2
公开(公告)日：2020-08-04
申请号：US15599067
申请日：2017-05-18
申请人： TOKYO ELECTRON LIMITED
发明人： Kenji Sekiguchi , Itaru Kanno , Meitoku Aibara , Kouzou Tachibana
IPC分类号： H01L21/67 , H01L21/02 , B08B7/00 , B08B3/04
摘要： A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

2. 发明申请

US20190355574A1 SUBSTRATE PROCESSING METHOD, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190355574A1
公开(公告)日：2019-11-21
申请号：US16411404
申请日：2019-05-14
申请人： Tokyo Electron Limited
发明人： Itaru Kanno , Hiromi Kiyose , Gentaro Goshi , Naohiko Hamamura , Takuro Masuzumi , Kenji Sekiguchi , Satoru Tanaka , Teruomi Minami
IPC分类号： H01L21/02 , H01L21/67 , F26B3/28
摘要： A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

3. 发明授权

US10811283B2 Substrate cleaning method, substrate cleaning system, and memory medium 有权
公开(公告)号：US10811283B2
公开(公告)日：2020-10-20
申请号：US15904539
申请日：2018-02-26
申请人： TOKYO ELECTRON LIMITED
发明人： Miyako Kaneko , Keiji Tanouchi , Takehiko Orii , Itaru Kanno , Meitoku Aibara , Satoru Tanaka
IPC分类号： H01L21/02 , H01L21/67
摘要： A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

4. 发明授权

US10792711B2 Substrate processing system, substrate cleaning method, and recording medium 有权
公开(公告)号：US10792711B2
公开(公告)日：2020-10-06
申请号：US16215958
申请日：2018-12-11
申请人： Tokyo Electron Limited
发明人： Meitoku Aibara , Yuki Yoshida , Hisashi Kawano , Masami Yamashita , Itaru Kanno , Kenji Mochida , Motoyuki Shima
IPC分类号： B08B3/08 , H01L21/02 , H01L21/67
摘要： An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

5. 发明授权

US10272478B2 Substrate processing system, substrate cleaning method, and recording medium 有权
公开(公告)号：US10272478B2
公开(公告)日：2019-04-30
申请号：US14809387
申请日：2015-07-27
申请人： TOKYO ELECTRON LIMITED
发明人： Meitoku Aibara , Yuki Yoshida , Hisashi Kawano , Masami Yamashita , Itaru Kanno , Kenji Mochida , Motoyuki Shima
IPC分类号： B08B3/08 , H01L21/02 , H01L21/67
摘要： An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment includes a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, the treatment film includes an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

6. 发明授权

US10242889B2 Substrate liquid processing method and substrate liquid processing apparatus 有权
公开(公告)号：US10242889B2
公开(公告)日：2019-03-26
申请号：US14828579
申请日：2015-08-18
申请人： Tokyo Electron Limited
发明人： Jun Nonaka , Itaru Kanno
IPC分类号： H01L21/67 , H01L21/02
摘要： Disclosed is a substrate liquid processing method. The method includes producing a processing liquid including deionized water, carbon dioxide, and ammonia, which has a PH of a predetermined value in a range of pH 5 to 9; and processing a substrate having a metal exposed, using the processing liquid.

7. 发明授权

US09378940B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US09378940B2
公开(公告)日：2016-06-28
申请号：US13916826
申请日：2013-06-13
申请人： Tokyo Electron Limited
发明人： Hisashi Kawano , Norihiro Ito , Yosuke Hachiya , Jun Nogami , Kotaro Ooishi , Itaru Kanno
IPC分类号： H01L21/02 , H01L21/67 , H01L21/311
CPC分类号： H01L21/02057 , G03F7/423 , H01L21/31133 , H01L21/67051
摘要： The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.
摘要翻译：本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。

8. 发明授权

US11367630B2 Substrate cleaning method, substrate cleaning system, and memory medium 有权
公开(公告)号：US11367630B2
公开(公告)日：2022-06-21
申请号：US17007085
申请日：2020-08-31
申请人： TOKYO ELECTRON LIMITED
发明人： Miyako Kaneko , Keiji Tanouchi , Takehiko Orii , Itaru Kanno , Meitoku Aibara , Satoru Tanaka
IPC分类号： H01L21/02 , H01L21/67
摘要： A method for cleaning a substrate includes supplying to a substrate on which a resist layer is not formed a film-forming processing liquid which includes a volatile component and forms a film on the substrate, forming a processing film on the substrate by solidifying or curing the film-forming processing liquid supplied on the substrate, and supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate.

9. 发明授权

US10998183B2 Substrate cleaning apparatus, substrate cleaning system, substrate cleaning method and memory medium 有权
公开(公告)号：US10998183B2
公开(公告)日：2021-05-04
申请号：US15041273
申请日：2016-02-11
申请人： TOKYO ELECTRON LIMITED
发明人： Miyako Kaneko , Takehiko Orii , Satoru Shimura , Masami Yamashita , Itaru Kanno
IPC分类号： H01L21/02 , H01L21/67 , H01L21/687 , B08B3/08
摘要： A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

10. 发明授权

US10083845B2 Substrate processing apparatus, substrate processing method and storage medium 有权
公开(公告)号：US10083845B2
公开(公告)日：2018-09-25
申请号：US15005415
申请日：2016-01-25
申请人： Tokyo Electron Limited
发明人： Itaru Kanno
IPC分类号： H01L21/67 , H01L21/02 , H01L21/66
CPC分类号： H01L21/6708 , H01L21/02052 , H01L21/02057 , H01L21/67051 , H01L21/67115 , H01L21/67253 , H01L22/12
摘要： Provided is a substrate processing apparatus, in which a processing liquid is supplied to a substrate W held horizontally by a substrate holding unit. A processing liquid passing portion includes a passing surface that is provided between the substrate W and a recovery cup provided around the substrate W such that the processing liquid flows on the passing surface. Light for concentration detection is projected from a light projection unit to the passing surface, and a concentration detection unit detects a concentration of the processing liquid based on a result of receiving the reflected light of the light by a light receiving unit.

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