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1. 发明授权

US10263157B2 Light-emitting diode with transparent conductive electrodes for improvement in light extraction efficiency 有权
公开(公告)号：US10263157B2
公开(公告)日：2019-04-16
申请号：US15629106
申请日：2017-06-21
申请人： Tae Yeon Seong , Dae-Hyun Kim , Byoungjun Choi
发明人： Tae Yeon Seong , Dae-Hyun Kim , Byoungjun Choi
IPC分类号： H01L33/42 , H01L33/06 , H01L33/40 , H01L33/22 , H01L33/30 , H01L33/14 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/44
摘要： A light-emitting diode device may include a conductive substrate, a metal reflection layer provided on the conductive substrate, a transparent insulating layer provided on the metal reflection layer, an n ohmic contact plug provided in a lower portion of each of through holes formed in the transparent insulating layer, an n-type gallium arsenide (GaAs) plug provided in an upper portion of the through hole, an n cladding layer provided on the transparent insulating layer, an active layer provided on the n cladding layer, a p cladding layer provided on the active layer, a p-type GaP window layer provided on the p cladding layer, a p ohmic contact pattern provided on the p-type GaP window layer, a transparent conductive metal oxide pattern provided on the p ohmic contact layer, and a p electrode pad provided on the transparent conductive metal oxide.

2. 发明授权

US10181550B2 Method for fabricating high-efficiency light emitting diode having light emitting window electrode structure 有权
公开(公告)号：US10181550B2
公开(公告)日：2019-01-15
申请号：US15628195
申请日：2017-06-20
申请人： Tae Yeon Seong , Ki Seok Kim , Hwan Kyo Kim , Dae-Hyun Kim
发明人： Tae Yeon Seong , Ki Seok Kim , Hwan Kyo Kim , Dae-Hyun Kim
IPC分类号： H01L33/32 , H01L33/36 , H01L33/38 , H01L33/00 , H01L33/20
摘要： A lateral light emitting diode device includes: a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a MESA region formed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer; a transparent window layer disposed on the n-type GaN layer in the entire or part of the MESA region; a plurality of contact plugs which is in contact with the n-type GaN layer through the transparent window layer; and an n-electrode disposed on the transparent window layer to connect the plurality of contact plugs to each other.

3. 发明授权

US09978911B2 Light-emitting diode device for enhancing light extraction efficiency and current injection efficiency 有权
公开(公告)号：US09978911B2
公开(公告)日：2018-05-22
申请号：US15608626
申请日：2017-05-30
申请人： Tae Yeon Seong , Jee-Yun Lee , Dae-Hyun Kim , Ki Seok Kim
发明人： Tae Yeon Seong , Jee-Yun Lee , Dae-Hyun Kim , Ki Seok Kim
IPC分类号： H01L33/06 , H01L33/42 , H01L33/14 , H01L33/32
CPC分类号： H01L33/42 , H01L33/06 , H01L33/145 , H01L33/32
摘要： Provided is a GaN light-emitting diode (LED) device. The LED device may include a substrate, an n-type GaN layer on the substrate, an active layer on the n-type GaN layer, a p-type GaN layer on the active layer, a current spreading layer including a transparent conductive metal oxide material on the p-type GaN layer, a plurality of upper current injection electrodes provided on the current spreading layer to be spaced apart from each other, an upper electrode pattern extending to cover the upper current injection electrodes, and an upper electrode pad electrically connected to the upper electrode pattern. The upper electrode pattern may include first and second upper electrode patterns, which are sequentially stacked and are a silver or silver alloy thin layer and a transparent conductive metal oxide thin layer, respectively.

4. 发明申请

US20110291140A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 审中-公开
标题翻译：发光装置和发光装置包装
公开(公告)号：US20110291140A1
公开(公告)日：2011-12-01
申请号：US13116192
申请日：2011-05-26
申请人： Kwang Ki Choi , Ji hyung Moon , June O Song , Sang Youl Lee , Tae Yeon Seong , Se Yeon Jung , Joon Woo Jeon , Seong Han Park
发明人： Kwang Ki Choi , Ji hyung Moon , June O Song , Sang Youl Lee , Tae Yeon Seong , Se Yeon Jung , Joon Woo Jeon , Seong Han Park
IPC分类号： H01L33/10 , H01L33/26
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/405 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the gallium barrier layer.
摘要翻译：提供了一种发光装置。发光器件包括发光结构层，该发光结构层包括第一导电类型半导体层，有源层和第二导电类型半导体层，发光结构层上的镓阻挡层，以及镓势垒上的金属电极层层。

5. 发明申请

US20110114984A1 SUPPORTING SUBSTRATE FOR MANUFACTURING VERTICALLY-STRUCTURED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE SUPPORTING SUBSTRATE 有权
标题翻译：用于制造垂直结构的半导体发光器件的支撑衬底和使用支撑衬底的半导体发光器件
公开(公告)号：US20110114984A1
公开(公告)日：2011-05-19
申请号：US13054472
申请日：2009-07-15
申请人： Tae Yeon Seong
发明人： Tae Yeon Seong
IPC分类号： H01L33/10 , H01L29/30 , H01L33/62
CPC分类号： H01L33/0079 , H01L21/76254 , H01L33/007 , H01L33/40 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention is related to a supporting substrate for manufacturing vertically-structured semiconductor light emitting device and a vertically-structured semiconductor light emitting device using the same, which minimize damage and breaking of a multi-layered light-emitting structure thin film separated from a sapphire substrate during the manufacturing process, thereby improving the whole performance of the semiconductor light emitting device.The supporting substrate for manufacturing the vertically-structured semiconductor light emitting device of the present invention comprises: a selected supporting substrate formed of a material having a difference of thermal expansion coefficient of 5 ppm or less from a sapphire substrate on which a multi-layered light-emitting structure thin film comprising a Group III-V nitride-based semiconductor is laminated; a sacrificial layer formed on the selected supporting substrate; a thick metal film formed on an upper part of the sacrificial layer; and a bonding layer formed on an upper part of the thick metal layer and formed of a soldering or brazing alloy material.
摘要翻译：本发明涉及用于制造垂直构造的半导体发光器件的支撑衬底和使用该支撑衬底的垂直构造的半导体发光器件，其使从与之相隔离的多层发光结构薄膜的损伤和断裂最小化蓝宝石衬底，从而提高半导体发光器件的整体性能。用于制造本发明的垂直构造的半导体发光器件的支撑衬底包括：由蓝宝石衬底的热膨胀系数为5ppm以下的材料形成的选择的支撑衬底，其中多层光层叠由III-V族氮化物类半导体构成的发光结构薄膜; 形成在所选择的支撑衬底上的牺牲层; 形成在牺牲层的上部的厚金属膜; 以及形成在厚金属层的上部并由焊接或钎焊合金材料形成的接合层。

6. 发明授权

US10403791B2 Vertical light-emitting diode device and method of fabricating the same 有权
公开(公告)号：US10403791B2
公开(公告)日：2019-09-03
申请号：US15629051
申请日：2017-06-21
申请人： Tae Yeon Seong , Ki Seok Kim , Sung-joo Song
发明人： Tae Yeon Seong , Ki Seok Kim , Sung-joo Song
IPC分类号： H01L21/02 , H01L29/20 , H01L29/02 , H01L33/24 , H01L33/00 , H01L33/32 , H01L33/20 , H01L33/30 , H01L33/40 , H01L33/42 , H01L33/38
摘要： A vertical light-emitting diode device and a method of fabricating the same are provided. The device may include a conductive substrate serving as a p electrode, a p-type GaN layer provided on the conductive substrate, an active layer provided on the p-type GaN layer, an n-type GaN layer provided on the active layer, an n electrode pattern provided on the n-type GaN layer, a metal oxide structure filling a plurality of holes formed in the n-type GaN layer, and a seed layer provided on bottom surfaces of the holes and used to as a seed in a crystal growth process of the metal oxide structure.

7. 发明授权

US10177279B2 Light-emitting diode with multiple N contact structure 有权
公开(公告)号：US10177279B2
公开(公告)日：2019-01-08
申请号：US15608141
申请日：2017-05-30
申请人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
发明人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
IPC分类号： H01L33/10 , H01L33/38 , H01L33/24
摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

8. 发明授权

US08932890B2 Vertical-structure semiconductor light emitting element and a production method therefor 有权
标题翻译：垂直结构半导体发光元件及其制造方法
公开(公告)号：US08932890B2
公开(公告)日：2015-01-13
申请号：US13505618
申请日：2010-11-23
申请人： Tae Yeon Seong
发明人： Tae Yeon Seong
IPC分类号： H01L21/00 , H01L33/64 , H01L33/00
CPC分类号： H01L33/647 , H01L33/0079
摘要： The present invention relates to a vertical-structure semiconductor light emitting device and a production method thereof, more specifically, to a vertical-structure semiconductor light emitting device having a high-performance heat sink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high performance heatsink support and so suffers not fine micro-cracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film.
摘要翻译：垂直结构半导体发光器件及其制造方法技术领域本发明涉及垂直结构半导体发光器件及其制造方法，更具体地说，涉及具有厚金属膜或金属箔的高性能散热器支撑体的垂直结构半导体发光器件。根据本发明制造的垂直结构半导体发光元件构成了高度可靠的发光元件，绝对没有热或机械损伤，因为它具有高性能的散热器支撑，因此不会发生微细微裂纹并且可以自由地受到影响进行热处理和后处理，包括侧表面钝化薄膜。

9. 发明申请

US20110127567A1 SUPPORTING SUBSTRATE FOR PREPARING SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUPPORTING SUBSTRATES 审中-公开
标题翻译：用于制备半导体发光器件的支撑衬底和使用支撑衬底的半导体发光器件
公开(公告)号：US20110127567A1
公开(公告)日：2011-06-02
申请号：US12995998
申请日：2009-06-02
申请人： Tae Yeon Seong
发明人： Tae Yeon Seong
IPC分类号： H01L33/02
CPC分类号： H01L33/0075 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/64 , H01L33/641 , H01L33/642
摘要： The present invention is related to a supporting substrate for preparing a semiconductor light-emitting device employing a multi-layered light-emitting structure thin-film and a method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device. The supporting substrate for preparing a semiconductor light-emitting device is formed by successively laminating a sacrificial layer, a heat-sink layer and a bonding layer on a selected supporting substrate. A method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device includes: preparing a first wafer in which a semiconductor multi-layered light-emitting structure is laminated/grown on an upper part of an initial substrate; preparing a second wafer which is a supporting substrate for preparing a semiconductor light-emitting device; bonding the second wafer on an upper part of the first wafer; separating the initial substrate of the first wafer from a result of the bonding; performing passivation after forming a first ohmic contact electrode on an upper part of the first wafer from which the initial substrate is separated; and preparing a single-chip by severing a result of the passivation.
摘要翻译：本发明涉及一种用于制备采用多层发光结构薄膜的半导体发光器件的支撑衬底和一种制备半导体发光器件的方法，所述半导体发光器件采用该支撑衬底来制备半导体发光器件，发光装置。用于制备半导体发光器件的支撑衬底通过在所选择的支撑衬底上依次层叠牺牲层，散热层和结合层而形成。一种制备半导体发光装置的半导体发光装置的制备方法，其特征在于，包括：准备半导体多层发光结构体的第一晶片，所述第一晶片在初始基质; 制备作为用于制备半导体发光器件的支撑衬底的第二晶片; 将第二晶片接合在第一晶片的上部; 从第一晶片的初始衬底与接合的结果分离; 在从其分离初始衬底的第一晶片的上部形成第一欧姆接触电极之后进行钝化; 并通过切断钝化的结果来制备单芯片。

10. 发明授权

US06326294B1 Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices 有权
标题翻译：制造用于氮化物化合物半导体器件的欧姆金属电极的方法
公开(公告)号：US06326294B1
公开(公告)日：2001-12-04
申请号：US09840171
申请日：2001-04-24
申请人： Ja Soon Jang , Tae Yeon Seong , Seong Ju Park
发明人： Ja Soon Jang , Tae Yeon Seong , Seong Ju Park
IPC分类号： H01L2128
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01S5/0425 , H01S5/32341
摘要： A method of fabricating on ohmic metal electrode. The p-type ohmic metal electrode according to the present invention employs Ru and RuOx as the cover layer in lieu of conventional Au, in order to effectively prevent penetration by contaminants in the air, such as oxygen, carbon, and H2O, and to form a stable metal-Ga intermetallic phase at the junction between the contact layer and the nitride compound semiconductor. The n-type ohmic metal electrode according to the present invention employs Ru as the diffusion barrier in lieu of conventional Ni or Pt, in order to effectively form a metal-nitride phase such as titanium nitride that contributes to superior ohmic characteristics during the heating process, without destruction of the junction. According to the present invention, it is possible to fabricate devices having superior electrical, optical, and thermal characteristics compared with conventional devices.
摘要翻译：一种在欧姆金属电极上制造的方法。根据本发明的p型欧姆金属电极使用Ru和RuOx作为覆盖层代替常规Au，以便有效地防止空气中的污染物如氧，碳和H 2 O的渗透，并形成在接触层和氮化物半导体之间的接合处的稳定的金属-Ga金属间相。根据本发明的n型欧姆金属电极，为了有效地形成在加热过程中有助于优异的欧姆特性的诸如氮化钛的金属氮化物相，使用Ru作为常规的Ni或Pt的扩散阻挡层，不破坏交界处。根据本发明，与常规装置相比，可以制造具有优异的电，光和热特性的装置。

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