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1. 发明申请

US20120182051A1 DRIVING CIRCUIT FOR TRANSISTOR 有权
标题翻译：驱动电路用于晶体管
公开(公告)号：US20120182051A1
公开(公告)日：2012-07-19
申请号：US13433624
申请日：2012-03-29
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译：开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。第一电极是漏极或集电极。

2. 发明授权

US07671636B2 Switching circuit and driving circuit for transistor 有权
公开(公告)号：US07671636B2
公开(公告)日：2010-03-02
申请号：US11723967
申请日：2007-03-22
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

3. 发明申请

US20080012610A1 Switching circuit and driving circuit for transistor 有权
标题翻译：晶体管开关电路和驱动电路
公开(公告)号：US20080012610A1
公开(公告)日：2008-01-17
申请号：US11723967
申请日：2007-03-22
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00 , H03K17/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译：开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。第一电极是漏极或集电极。

4. 发明授权

US08519748B2 Driving circuit for driving transistor based on control current 有权
标题翻译：基于控制电流驱动晶体管的驱动电路
公开(公告)号：US08519748B2
公开(公告)日：2013-08-27
申请号：US13433624
申请日：2012-03-29
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译：开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。第一电极是漏极或集电极。

5. 发明授权

US08179169B2 Driving circuit with variable resistor for transistor 有权
标题翻译：具有晶体管可变电阻的驱动电路
公开(公告)号：US08179169B2
公开(公告)日：2012-05-15
申请号：US13105021
申请日：2011-05-11
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译：开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。第一电极是漏极或集电极。

6. 发明申请

US20100102857A1 Switching circuit and driving circuit for transistor 有权
标题翻译：晶体管开关电路和驱动电路
公开(公告)号：US20100102857A1
公开(公告)日：2010-04-29
申请号：US12654323
申请日：2009-12-17
申请人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H03K3/00 , H03K17/56
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译：开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。第一电极是漏极或集电极。

7. 发明授权

US07800195B2 Semiconductor apparatus having temperature sensing diode 有权
标题翻译：具有温度感测二极管的半导体装置
公开(公告)号：US07800195B2
公开(公告)日：2010-09-21
申请号：US12071719
申请日：2008-02-26
申请人： Shoji Ozoe , Shoji Mizuno , Takaaki Aoki , Tomofusa Shiga
发明人： Shoji Ozoe , Shoji Mizuno , Takaaki Aoki , Tomofusa Shiga
IPC分类号： H01L31/058
CPC分类号： H01L29/945 , G01K7/015 , H01L28/40 , H01L29/92
摘要： A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.
摘要翻译：提供一种半导体装置。半导体装置包括设置在半导体衬底的表面部分上的半导体衬底和温度感测二极管。流过温度感测二极管的正向电流和温度感测二极管两端的相应电压降之间的关系随着温度而变化。半导体装置还包括与温度感测二极管耦合的电容器，其被配置为降低作用在温度感测二极管上的噪声，并且被布置为使得电容器和温度感测二极管在半导体的厚度方向上具有层状结构基质。

8. 发明授权

US07982508B2 Switching circuit and driving circuit for transistor 有权
标题翻译：晶体管开关电路和驱动电路
公开(公告)号：US07982508B2
公开(公告)日：2011-07-19
申请号：US12654323
申请日：2009-12-17
申请人： Takaaki Aoki , Shoji Mizuno
发明人： Takaaki Aoki , Shoji Mizuno
IPC分类号： H03K3/00
CPC分类号： H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译：开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。第一电极是漏极或集电极。

9. 发明申请

US20080203389A1 Semiconductor apparatus having temperature sensing diode 有权
标题翻译：具有温度感测二极管的半导体装置
公开(公告)号：US20080203389A1
公开(公告)日：2008-08-28
申请号：US12071719
申请日：2008-02-26
申请人： Shoji Ozoe , Shoji Mizuno , Takaaki Aoki , Tomofusa Shiga
发明人： Shoji Ozoe , Shoji Mizuno , Takaaki Aoki , Tomofusa Shiga
IPC分类号： H01L29/861 , H01L21/329
CPC分类号： H01L29/945 , G01K7/015 , H01L28/40 , H01L29/92
摘要： A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.
摘要翻译：提供一种半导体装置。半导体装置包括设置在半导体衬底的表面部分上的半导体衬底和温度感测二极管。流过温度感测二极管的正向电流和温度感测二极管两端的相应电压降之间的关系随着温度而变化。半导体装置还包括与温度感测二极管耦合的电容器，其被配置为降低作用在温度感测二极管上的噪声，并且被布置为使得电容器和温度感测二极管在半导体的厚度方向上具有层状结构基质。

10. 发明授权

US08154073B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08154073B2
公开(公告)日：2012-04-10
申请号：US11826206
申请日：2007-07-12
申请人： Takaaki Aoki , Tetsuo Fujii , Tomofusa Shiga
发明人： Takaaki Aoki , Tetsuo Fujii , Tomofusa Shiga
IPC分类号： H01L29/80
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66734 , H01L29/7803 , H01L29/7806 , H01L29/7811 , H01L29/7828 , H01L29/8083
摘要： A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.
摘要翻译：半导体器件包括：半导体衬底; 垂直型沟槽栅极MOS晶体管; 肖特基势垒二极管; 多个沟槽具有条纹图案以将内部区域分成第一和第二分离区域; 和每个沟槽中的多晶硅膜。第一分离区域包括用于提供源极的第一导电类型区域和用于提供沟道区域的第二导电类型层。第一导电类型区域与第一沟槽相邻。第一沟槽中的多晶硅膜与栅极布线耦合。第二沟槽不与第一导电类型区域相邻。第二沟槽中的多晶硅膜与源极或栅极布线耦合。第二分离区域中的衬底与用于提供肖特基势垒的源极配线耦合。

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