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    • 3. 发明授权
    • Device for cleaning surrounding air fed to passenger compartment of
motor vehicle
    • 用于清洁供应到机动车辆客舱的周围空气的装置
    • US5454859A
    • 1995-10-03
    • US325519
    • 1994-10-19
    • Takatoshi ChibaShigeru Kobayashi
    • Takatoshi ChibaShigeru Kobayashi
    • B60H3/06B62D25/08B03C3/36
    • B62D25/081B03C3/363B60H3/0078B60H3/06B60H3/0641
    • Various types of air cleaning devices for cleaning air fed to a passenger compartment of a motor vehicle are described. These air cleaning devices are arranged to incorporate with a cowl top structure of the vehicle. In one type, an air filter is disposed in an external air introduction passage led to the passenger compartment, and when the air filter is blocked with arrested dusts, a bypass passage is established to keep the feeding of atmospheric air to the passenger compartment. In a modified type, the bypass passage is instantly blocked and an internal air circulation mode is established. In one type, an electrostatic air collecting unit is used for arresting very fine particles in the atmospheric air fed to the passenger compartment. In order to achieve a smoothed air flow in the electrostatic air collecting unit, smoothly curved air guide passages are defined between positive and negative electrode plates. In one type, two hood ridge reinforcing hollowed structures are used for feeding the air box and thus the passenger compartment with a satisfied amount of atmospheric air. In order to facilitate the maintenance of the air filter in the air box, an inspection aperture is provided in the cowl top. Usually, the inspection aperture is covered by a lid.
    • 描述了用于清洁供给到机动车辆的乘客室的空气的各种类型的空气净化装置。 这些空气净化装置被布置成与车辆的整流罩顶部结构相结合。 在一种类型中,空气过滤器设置在引导到乘客室的外部空气引入通道中,并且当空气过滤器被阻塞的灰尘堵塞时,建立旁路通道以保持向乘客室供应大气。 在改型中,旁路通道立即被阻塞并建立内部空气循环模式。 在一种类型中,静电空气收集单元用于阻止供给到乘客舱的大气中的非常细小的颗粒。 为了在静电收集单元中实现平滑的气流,在正极板和负极板之间限定平滑弯曲的空气引导通道。 在一种类型中,使用两个罩脊加强中空结构来供给空气箱,从而使乘客室具有满足的大气空气量。 为了便于维护空气过滤器,在整流罩顶部设有检查孔。 通常,检查孔被盖子覆盖。
    • 7. 发明授权
    • Apparatus for heat processing a substrate
    • 用于热处理衬底的装置
    • US5405446A
    • 1995-04-11
    • US272486
    • 1994-07-11
    • Toshihiro NakajimaTakatoshi ChibaKiyofumi NishiiToru Sato
    • Toshihiro NakajimaTakatoshi ChibaKiyofumi NishiiToru Sato
    • H01L21/26C23C16/44C23C16/455C30B25/14C30B31/16H01L21/00H01L21/205H01L21/22H01L21/31H01L21/324C23C16/00
    • C23C16/45504C23C16/45512C23C16/4558C30B25/14C30B31/16H01L21/67109
    • An apparatus for heat processing a substrate includes a heat processing furnace, which has a flat inner space for accommodating the substrate, and a gas introduction unit which introduces gas supplied via a piping into the inner space of the heat processing furnace via a gas supply inlet of the heat processing furnace. The apparatus effects the heat processing on the substrate placed within a gas flow formed in the inner space. The gas introduction unit includes a first gas introduction chamber, which receives the gas supplied via the piping for reducing a flow velocity of the gas, and a second gas introduction chamber, which is in communication with the first gas introduction chamber, is formed over at least one of outer surfaces of the top furnace wall and the bottom furnace wall at the one end of the heat processing furnace, and extends in a belt-like form through an entire width of the heat processing furnace. A portion of the top furnace wall and/or bottom furnace wall, over which the second gas introduction chamber is formed, has a nozzle opening, which covers the entire width of the heat processing furnace for flowing the gas from the second gas introduction chamber into the inner space in a direction perpendicular to the top furnace wall and/or bottom furnace wall. The gas supply port and the first gas introduction chamber are preferably separated from each other by a partition which forms a portion of a cylindrical or spherical surface and has a plurality of through-holes.
    • 一种用于加热基板的设备包括:热处理炉,其具有用于容纳基板的平坦内部空间;以及气体引入单元,其经由管道供给的气体经由气体供给入口引入到热处理炉的内部空间 的热处理炉。 该装置对放置在内部空间中形成的气流内的基板进行热处理。 气体引入单元包括:第一气体导入室,其接收经由管道供给的气体,用于降低气体的流速;以及与第一气体导入室连通的第二气体导入室,形成在 在热处理炉的一端的顶炉壁和底炉壁的至少一个外表面,并且以带状形式延伸通过热处理炉的整个宽度。 顶部炉壁和/或底部炉壁的形成有第二气体导入室的部分具有喷嘴开口,该喷嘴开口覆盖用于使气体从第二气体导入室流出的热处理炉的整个宽度进入 在垂直于顶部炉壁和/或底部炉壁的方向上的内部空间。 气体供给口和第一气体导入室优选通过形成圆筒状或球面的一部分并具有多个通孔的隔壁相互分离。
    • 8. 发明授权
    • Method of controlling heat treatment apparatus for substrate
    • 控制基板热处理装置的方法
    • US4924073A
    • 1990-05-08
    • US308094
    • 1989-02-08
    • Takatoshi Chiba
    • Takatoshi Chiba
    • H01L21/26C30B31/12C30B31/18F27B17/00G05D23/00G05D23/19H01L21/205H01L21/22H01L21/31
    • C30B31/18C30B31/12F27B17/0025
    • A semiconductor wafer (1) is thermally treated in a prescribed heating cycle while it is introduced into a furnace casing (4) of a furnace (4) and discharged therefrom. A temperature of a monitor chip (11) is measured by a radiation thermometer (16) immediately before introduction of the semiconductor wafer and memorized as an idling temperature. Then, while the furnace is heated up in order to make a measured temperature of the monitor chip agree with the idling temperature without the semiconductor wafer introduced, a temperature of the furnace casing is measured by a radiation thermometer (8) and memorized as a warm-up temperature. The furnace is controlled on the basis of the warm-up temperature or the idling temperature prior to sequential heat treatment of a number of semiconductor wafers.
    • 半导体晶片(1)在被引入炉(4)的炉壳(4)中并在其中排出时,在规定的加热循环中进行热处理。 监测芯片(11)的温度是在半导体晶片引入之前立即由辐射温度计(16)测量的,并作为怠速温度存储。 然后,为了使监测芯片的测量温度与引入半导体晶片的空转温度一致,炉子被加热,炉壳的温度通过辐射温度计(8)测量并记忆为温度 升温 在多个半导体晶片的连续热处理之前,基于预热温度或空转温度来控制炉。