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1. 发明申请

US20090256464A1 ELECTRON BEAM APPARATUS AND IMAGE DISPLAY APPARATUS USING THE SAME 失效
标题翻译：电子束装置和使用该装置的图像显示装置
公开(公告)号：US20090256464A1
公开(公告)日：2009-10-15
申请号：US12421794
申请日：2009-04-10
申请人： Takeo Tsukamoto , Takuto Moriguchi , Eiji Takeuchi
发明人： Takeo Tsukamoto , Takuto Moriguchi , Eiji Takeuchi
IPC分类号： H01J9/02
CPC分类号： H01J9/025 , H01J29/467 , H01J31/127
摘要： The present invention provides an electron beam apparatus provided with an electron-emitting device which has a simple structure, shows high electron-emitting efficiency and stably works. This electron beam apparatus has an insulating member and a gate formed on a substrate, a recess portion formed in the insulating member, a protruding portion that protrudes from an edge of the recess portion toward the gate and is provided on an end part of a cathode opposing to the gate, which is arranged on the side face of the insulating member; and makes an electric field converge on an end part in the width direction of the protruding portion to make an electron emitted therefrom.
摘要翻译：本发明提供一种具有电子发射器件的电子束装置，其结构简单，电子发射效率高，稳定工作。该电子束装置具有绝缘构件和形成在基板上的栅极，形成在绝缘构件中的凹部，从凹部的边缘朝向栅极突出并设置在阴极的端部的突出部与所述绝缘构件的侧面上配置的所述门相对; 并且使电场在突出部的宽度方向上的端部收敛，从而发出电子。

2. 发明授权

US08154184B2 Electron beam apparatus and image display apparatus using the same 失效
标题翻译：电子束装置及使用其的图像显示装置
公开(公告)号：US08154184B2
公开(公告)日：2012-04-10
申请号：US12946561
申请日：2010-11-15
申请人： Takeo Tsukamoto , Takuto Moriguchi , Eiji Takeuchi
发明人： Takeo Tsukamoto , Takuto Moriguchi , Eiji Takeuchi
IPC分类号： H01J1/304 , H01J19/02 , H01J1/30 , H01J19/34 , H01J19/38
CPC分类号： H01J9/025 , H01J29/467 , H01J31/127
摘要： The present invention provides an electron beam apparatus provided with an electron-emitting device which has a simple structure, shows high electron-emitting efficiency and stably works. This electron beam apparatus has an insulating member and a gate formed on a substrate, a recess portion formed in the insulating member, a protruding portion that protrudes from an edge of the recess portion toward the gate and is provided on an end part of a cathode opposing to the gate, which is arranged on the side face of the insulating member; and makes an electric field converge on an end part in the width direction of the protruding portion to make an electron emitted therefrom.
摘要翻译：本发明提供一种具有电子发射器件的电子束装置，其结构简单，电子发射效率高，稳定工作。该电子束装置具有绝缘构件和形成在基板上的栅极，形成在绝缘构件中的凹部，从凹部的边缘朝向栅极突出并设置在阴极的端部的突出部与所述绝缘构件的侧面上配置的所述门相对; 并且使电场在突出部的宽度方向上的端部收敛，从而发出电子。

3. 发明申请

US20110062852A1 ELECTRON BEAM APPARATUS AND IMAGE DISPLAY APPARATUS USING THE SAME 失效
标题翻译：电子束装置和使用该装置的图像显示装置
公开(公告)号：US20110062852A1
公开(公告)日：2011-03-17
申请号：US12946561
申请日：2010-11-15
申请人： Takeo Tsukamoto , Takuto Moriguchi , Eiji Takeuchi
发明人： Takeo Tsukamoto , Takuto Moriguchi , Eiji Takeuchi
IPC分类号： H01J1/304 , H01J1/02
CPC分类号： H01J9/025 , H01J29/467 , H01J31/127
摘要： The present invention provides an electron beam apparatus provided with an electron-emitting device which has a simple structure, shows high electron-emitting efficiency and stably works. This electron beam apparatus has an insulating member and a gate formed on a substrate, a recess portion formed in the insulating member, a protruding portion that protrudes from an edge of the recess portion toward the gate and is provided on an end part of a cathode opposing to the gate, which is arranged on the side face of the insulating member; and makes an electric field converge on an end part in the width direction of the protruding portion to make an electron emitted therefrom.
摘要翻译：本发明提供一种具有电子发射器件的电子束装置，其结构简单，电子发射效率高，稳定工作。该电子束装置具有绝缘构件和形成在基板上的栅极，形成在绝缘构件中的凹部，从凹部的边缘朝向栅极突出并设置在阴极的端部的突出部与所述绝缘构件的侧面上配置的所述门相对; 并且使电场在突出部的宽度方向上的端部收敛，从而发出电子。

4. 发明授权

US07884533B2 Electron beam apparatus and image display apparatus using the same 失效
标题翻译：电子束装置及使用其的图像显示装置
公开(公告)号：US07884533B2
公开(公告)日：2011-02-08
申请号：US12421794
申请日：2009-04-10
申请人： Takeo Tsukamoto , Takuto Moriguchi , Eiji Takeuchi
发明人： Takeo Tsukamoto , Takuto Moriguchi , Eiji Takeuchi
IPC分类号： H01J1/304 , H01J19/02 , H01J1/30 , H01J19/34 , H01J19/38
CPC分类号： H01J9/025 , H01J29/467 , H01J31/127
摘要： The present invention provides an electron beam apparatus provided with an electron-emitting device which has a simple structure, shows high electron-emitting efficiency and stably works. This electron beam apparatus has an insulating member and a gate formed on a substrate, a recess portion formed in the insulating member, a protruding portion that protrudes from an edge of the recess portion toward the gate and is provided on an end part of a cathode opposing to the gate, which is arranged on the side face of the insulating member; and makes an electric field converge on an end part in the width direction of the protruding portion to make an electron emitted therefrom.
摘要翻译：本发明提供一种具有电子发射器件的电子束装置，其结构简单，电子发射效率高，工作稳定。该电子束装置具有绝缘构件和形成在基板上的栅极，形成在绝缘构件中的凹部，从凹部的边缘朝向栅极突出并设置在阴极的端部的突出部与所述绝缘构件的侧面上配置的所述门相对; 并且使电场在突出部的宽度方向上的端部收敛，从而发出电子。

5. 发明授权

US07850502B2 Method of manufacturing electron-emitting device and method of manufacturing image display apparatus 失效
标题翻译：制造电子发射器件的方法和制造图象显示装置的方法
公开(公告)号：US07850502B2
公开(公告)日：2010-12-14
申请号：US12421780
申请日：2009-04-10
申请人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
发明人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
IPC分类号： H01J9/00
CPC分类号： H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.
摘要翻译：一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

6. 发明申请

US20100159790A1 METHOD OF MANUFACTURING ELECTRON-EMITTING DEVICE AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS USING THE SAME 审中-公开
标题翻译：制造电子发射装置的方法和使用其制造图像显示装置的方法
公开(公告)号：US20100159790A1
公开(公告)日：2010-06-24
申请号：US12421758
申请日：2009-04-10
申请人： Kenichi Iwata , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Shin Kitamura
发明人： Kenichi Iwata , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Shin Kitamura
IPC分类号： H01J9/04
CPC分类号： H01J31/127 , H01J1/3046 , H01J29/04 , H01J2201/30423 , H01J2329/0423
摘要： A method of manufacturing an electron-emitting device includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film. At the first step, the conductive film is formed so that film density of a portion on the side surface of the insulating layer becomes lower than film density of a portion on the corner portion of the insulating layer.
摘要翻译：制造电子发射器件的方法包括：第一步骤，在具有上表面和侧表面的绝缘层上形成导电膜，所述绝缘层经由拐角部分从所述侧表面延伸到所述上表面表面并覆盖角部的至少一部分，以及蚀刻导电膜的第二步骤。在第一步骤中，形成导电膜，使得绝缘层的侧表面上的部分的膜密度变得低于绝缘层的角部上的部分的膜密度。

7. 发明申请

US20100159781A1 METHOD OF MANUFACTURING ELECTRON-EMITTING DEVICE AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS 失效
标题翻译：制造电子发射装置的方法和制造图像显示装置的方法
公开(公告)号：US20100159781A1
公开(公告)日：2010-06-24
申请号：US12421780
申请日：2009-04-10
申请人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
发明人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
IPC分类号： H01J9/00 , H01J9/12
CPC分类号： H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.
摘要翻译：一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

8. 发明申请

US20090284120A1 ELECTRON EMITTER AND IMAGE DISPLAY APPARATUS 审中-公开
标题翻译：电子发射器和图像显示装置
公开(公告)号：US20090284120A1
公开(公告)日：2009-11-19
申请号：US12430580
申请日：2009-04-27
申请人： Koki Nukanobu , Takahiro Sato , Takuto Moriguchi , Eiji Takeuchi
发明人： Koki Nukanobu , Takahiro Sato , Takuto Moriguchi , Eiji Takeuchi
IPC分类号： H01J1/02
CPC分类号： H01J1/316 , H01J9/027 , H01J2201/3165 , H01J2329/0481 , H01J2329/0489
摘要： An electron emitter retaining a stable electron emission property with minimized fluctuation over a long period of time is provided. Also, a long-life image display apparatus that exhibits little fluctuation over a long period of time, by using electron emitters that retain a stable electron emission property with minimized fluctuation over long period of time is provided.
摘要翻译：提供了保持稳定的电子发射特性的电子发射器，其长时间波动最小化。另外，通过使用长时间保持稳定的电子发射特性和最小化的波动的电子发射体，提供长时间显示很小波动的长寿命图像显示装置。

9. 发明申请

US20090284127A1 ELECTRON-EMITTING DEVICE AND IMAGE DISPLAY APPARATUS 失效
标题翻译：电子发射装置和图像显示装置
公开(公告)号：US20090284127A1
公开(公告)日：2009-11-19
申请号：US12463715
申请日：2009-05-11
申请人： Eiji Takeuchi , Takeo Tsukamoto
发明人： Eiji Takeuchi , Takeo Tsukamoto
IPC分类号： H01J1/62 , H01J9/02
CPC分类号： H01J1/316 , H01J31/127 , H01J2201/3165 , H01J2329/0489
摘要： An electron-emitting device has a pair of device electrodes formed on a substrate and an electroconductive film connected to the device electrodes. The electroconductive film has a first gap between the device electrodes and has a carbon film having a second gap at least in the first gap. The substrate is formed by stacking a nitrogen-contained activation suppressing layer and an activation accelerating layer having a nitrogen containing ratio smaller than that of the activation suppressing layer onto a base and has nitrogen containing ratio distribution in the activation suppressing layer in a film thickness direction. The nitrogen containing ratio of the activation suppressing layer at the activation accelerating layer side is smaller than that at the base side.
摘要翻译：电子发射器件具有形成在衬底上的一对器件电极和连接到器件电极的导电膜。导电膜在器件电极之间具有第一间隙，并且具有至少在第一间隙中具有第二间隙的碳膜。基板是通过将含氮活化抑制层和活性促进层与活化抑制层的比例小于活化抑制层的活化促进层而形成的，并且在活化抑制层中具有膜厚度方向上的含氮比分布。活化促进层侧的活化抑制层的氮含量比基体侧的氮含有率小。

10. 发明授权

US08013511B2 Highly-efficient electron-emitting device and image display apparatus having a substrate with a distribution of nitrogen containing ratio 失效
标题翻译：具有含氮比例分布的基板的高效电子发射器件和图像显示装置
公开(公告)号：US08013511B2
公开(公告)日：2011-09-06
申请号：US12463715
申请日：2009-05-11
申请人： Eiji Takeuchi , Takeo Tsukamoto
发明人： Eiji Takeuchi , Takeo Tsukamoto
IPC分类号： H01J1/30 , H01L29/02
CPC分类号： H01J1/316 , H01J31/127 , H01J2201/3165 , H01J2329/0489
摘要： An electron-emitting device has a pair of device electrodes formed on a substrate and an electroconductive film connected to the device electrodes. The electroconductive film has a first gap between the device electrodes and has a carbon film having a second gap at least in the first gap. The substrate is formed by stacking a nitrogen-contained activation suppressing layer and an activation accelerating layer having a nitrogen containing ratio smaller than that of the activation suppressing layer onto a base and has nitrogen containing ratio distribution in the activation suppressing layer in a film thickness direction. The nitrogen containing ratio of the activation suppressing layer at the activation accelerating layer side is smaller than that at the base side.
摘要翻译：电子发射器件具有形成在衬底上的一对器件电极和连接到器件电极的导电膜。导电膜在器件电极之间具有第一间隙，并且具有至少在第一间隙中具有第二间隙的碳膜。基板是通过将含氮活化抑制层和活性促进层与活化抑制层的比例小于活化抑制层的活化促进层而形成的，并且在活化抑制层中具有膜厚度方向上的含氮比分布。活化促进层侧的活化抑制层的氮含量比基体侧的氮含有率小。

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