专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08625706B2 Signal processing apparatus, information processing apparatus, multilevel coding method, and data transmission method 失效
标题翻译：信号处理装置，信息处理装置，多级编码方法和数据传输方法
公开(公告)号：US08625706B2
公开(公告)日：2014-01-07
申请号：US12784026
申请日：2010-05-20
申请人： Tatsuo Shimizu , Takehiro Sugita
发明人： Tatsuo Shimizu , Takehiro Sugita
IPC分类号： H04L25/49
CPC分类号： H04L7/0008 , H04L7/06
摘要： Provided is a signal processing apparatus including an encoder for encoding, according to respective specific coding schemes, a first bit string formed from bit values at odd-numbered positions and a second bit string formed from bit values at even-numbered positions that are obtained by alternately extracting bit values from a bit string that is expressed by mutually different first and second bit values, and generating first and second encoded signals that do not include a DC component, and a signal generation unit for generating a multilevel signal by respectively adding, to a clock signal having larger amplitude than the first and second encoded signals that are generated by the encoder, the first encoded signal in synchronization with a timing of the clock signal being at a positive amplitude value and the second encoded signal in synchronization with a timing of the clock signal being at a negative amplitude value.
摘要翻译：提供了一种信号处理装置，包括编码器，根据各自的特定编码方案，编码由奇数位置的比特值形成的第一比特串，以及由偶数位置的比特值形成的第二比特串，交替地从由相互不同的第一和第二比特值表示的比特串中提取比特值，以及生成不包括DC分量的第一和第二编码信号;以及信号生成单元，用于通过分别将具有比由编码器产生的第一和第二编码信号大的振幅的时钟信号，与时钟信号的定时同步的第一编码信号处于正振幅值，并且第二编码信号与时钟信号处于负振幅值。

2. 发明申请

US20100329381A1 SIGNAL PROCESSING APPARATUS, INFORMATION PROCESSING APPARATUS, MULTILEVEL CODING METHOD, AND DATA TRANSMISSION METHOD 失效
标题翻译：信号处理装置，信息处理装置，多编码方法和数据传输方法
公开(公告)号：US20100329381A1
公开(公告)日：2010-12-30
申请号：US12784026
申请日：2010-05-20
申请人： Tatsuo Shimizu , Takehiro Sugita
发明人： Tatsuo Shimizu , Takehiro Sugita
IPC分类号： H04L25/49
CPC分类号： H04L7/0008 , H04L7/06
摘要： Provided is a signal processing apparatus including an encoder for encoding, according to respective specific coding schemes, a first bit string formed from bit values at odd-numbered positions and a second bit string formed from bit values at even-numbered positions that are obtained by alternately extracting bit values from a bit string that is expressed by mutually different first and second bit values, and generating first and second encoded signals that do not include a DC component, and a signal generation unit for generating a multilevel signal by respectively adding, to a clock signal having larger amplitude than the first and second encoded signals that are generated by the encoder, the first encoded signal in synchronization with a timing of the clock signal being at a positive amplitude value and the second encoded signal in synchronization with a timing of the clock signal being at a negative amplitude value.
摘要翻译：提供了一种信号处理装置，包括编码器，根据各自的特定编码方案，编码由奇数位置的比特值形成的第一比特串，以及由偶数位置的比特值形成的第二比特串，交替地从由相互不同的第一和第二比特值表示的比特串中提取比特值，以及生成不包括DC分量的第一和第二编码信号;以及信号生成单元，用于通过分别将具有比由编码器产生的第一和第二编码信号大的振幅的时钟信号，与时钟信号的定时同步的第一编码信号处于正振幅值，并且第二编码信号与时钟信号处于负振幅值。

3. 发明授权

US08406316B2 Information processing apparatus and mode switching method 失效
标题翻译：信息处理装置和模式切换方法
公开(公告)号：US08406316B2
公开(公告)日：2013-03-26
申请号：US12795446
申请日：2010-06-07
申请人： Takehiro Sugita , Isao Hidaka , Tatsuo Shimizu
发明人： Takehiro Sugita , Isao Hidaka , Tatsuo Shimizu
IPC分类号： H04L27/00
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171 , Y02D50/20
摘要： Provided is an information processing apparatus which includes a first-module including a first narrow-band communicator for performing narrow band communication with a second-module, a first broadband-communicator for performing broadband communication with the second-module, and a first controller for controlling an operation state of the first broadband-communicator according to an operation mode, and a second-module including a second narrow-band communicator for performing narrow-band communication with the first-module, a second broadband-communicator for performing broadband communication with the first-module, and a second controller for controlling an operation state of the second broadband-communicator according to an operation mode. The first controller places the first broadband-communicator in an operation state in a first mode, and places the first broadband-communicator in a standby state in a second mode. The second controller places the second broadband-communicator in an operation state in the first mode, and places the second broadband-communicator in a standby state in the second mode.
摘要翻译：提供了一种信息处理装置，包括：第一模块，包括用于与第二模块进行窄带通信的第一窄带通信器，用于与第二模块进行宽带通信的第一宽带通信器;以及第一控制器，根据操作模式控制第一宽带通信器的操作状态，以及包括用于与第一模块进行窄带通信的第二窄带通信器的第二模块，用于执行与第一模块的宽带通信的第二宽带通信器第一模块和第二控制器，用于根据操作模式控制第二宽带通信器的操作状态。第一控制器将第一宽带通信器置于处于第一模式的操作状态，并将第一宽带通信器置于第二模式的待机状态。第二控制器将第二宽带通信器置于处于第一模式的操作状态，并将第二宽带通信器置于第二模式的待机状态。

4. 发明申请

US20100316099A1 INFORMATION PROCESSING APPARATUS AND MODE SWITCHING METHOD 失效
标题翻译：信息处理装置和模式切换方法
公开(公告)号：US20100316099A1
公开(公告)日：2010-12-16
申请号：US12795446
申请日：2010-06-07
申请人： Takehiro SUGITA , Isao Hidaka , Tatsuo Shimizu
发明人： Takehiro SUGITA , Isao Hidaka , Tatsuo Shimizu
IPC分类号： H04L5/16
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171 , Y02D50/20
摘要： Provided is an information processing apparatus which includes a first-module including a first narrow-band communicator for performing narrow band communication with a second-module, a first broadband-communicator for performing broadband communication with the second-module, and a first controller for controlling an operation state of the first broadband-communicator according to an operation mode, and a second-module including a second narrow-band communicator for performing narrow-band communication with the first-module, a second broadband-communicator for performing broadband communication with the first-module, and a second controller for controlling an operation state of the second broadband-communicator according to an operation mode. The first controller places the first broadband-communicator in an operation state in a first mode, and places the first broadband-communicator in a standby state in a second mode. The second controller places the second broadband-communicator in an operation state in the first mode, and places the second broadband-communicator in a standby state in the second mode.
摘要翻译：提供了一种信息处理装置，包括：第一模块，包括用于与第二模块进行窄带通信的第一窄带通信器，用于与第二模块进行宽带通信的第一宽带通信器;以及第一控制器，根据操作模式控制第一宽带通信器的操作状态，以及包括用于与第一模块进行窄带通信的第二窄带通信器的第二模块，用于执行与第一模块的宽带通信的第二宽带通信器第一模块和第二控制器，用于根据操作模式控制第二宽带通信器的操作状态。第一控制器将第一宽带通信器置于处于第一模式的操作状态，并将第一宽带通信器置于第二模式的待机状态。第二控制器将第二宽带通信器置于处于第一模式的操作状态，并将第二宽带通信器置于第二模式的待机状态。

5. 发明授权

US08927404B2 Insulating film and semiconductor device including the same 有权
标题翻译：绝缘膜和包括其的半导体器件
公开(公告)号：US08927404B2
公开(公告)日：2015-01-06
申请号：US13445328
申请日：2012-04-12
申请人： Tatsuo Shimizu , Masato Koyama
发明人： Tatsuo Shimizu , Masato Koyama
IPC分类号： H01L21/4763 , H01L29/51 , H01L21/318 , H01L49/02 , H01L21/28 , H01L21/316 , H01L21/3115 , H01L29/66
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/28273 , H01L21/28282 , H01L21/31155 , H01L21/316 , H01L21/318 , H01L28/40 , H01L29/518 , H01L29/66545 , H01L29/66553 , H01L29/788 , H01L29/792
摘要： It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]—[H]}/2≦1.0×1021 cm−3.
摘要翻译：可以提供能够减小漏电流的绝缘膜。绝缘膜包括：含有金属，氢和氮的非晶氧化物介电膜。氧化物电介质膜中的氮量[N]和氢量[H]满足以下关系：{[N] - [H]} / 2＆nlE; 1.0×1021cm-3。

6. 发明授权

US08817671B2 Full duplex transmission circuit and electronic apparatus 有权
标题翻译：全双工传输电路和电子设备
公开(公告)号：US08817671B2
公开(公告)日：2014-08-26
申请号：US13325489
申请日：2011-12-14
申请人： Tatsuo Shimizu , Uichiro Omae
发明人： Tatsuo Shimizu , Uichiro Omae
IPC分类号： H04B1/56 , H03F3/45
CPC分类号： H04L5/14 , H04L25/0272
摘要： Disclosed herein is a full duplex transmission circuit including: a first internal input terminal receiving a signal to be transmitted; a second internal input terminal receiving a signal having an amplitude equal to ½ times the amplitude of the signal to be transmitted and having the same phase as the phase of the signal to be transmitted; an external input/output terminal; an internal output terminal; a first metal oxide semiconductor transistor; and the second metal oxide semiconductor transistor. A current generated by the current source as well as the sizes of the first and second metal oxide semiconductor transistors are set so that the transconductances of the first and second metal oxide semiconductor transistors become equal to 1/Z.
摘要翻译：这里公开了一种全双工传输电路，包括：第一内部输入端子，接收待传输的信号; 第二内部输入端子接收具有等于要发送的信号的振幅的1/2倍的信号的信号，并且具有与要发送的信号的相位相同的相位; 外部输入/输出端子; 内部输出端子; 一第一金属氧化物半导体晶体管; 和第二金属氧化物半导体晶体管。设置由电流源产生的电流以及第一和第二金属氧化物半导体晶体管的尺寸，使得第一和第二金属氧化物半导体晶体管的跨导变为等于1 / Z。

7. 发明授权

US08436417B2 Oxide cluster semiconductor memory device 有权
标题翻译：氧化物簇半导体存储器件
公开(公告)号：US08436417B2
公开(公告)日：2013-05-07
申请号：US12880711
申请日：2010-09-13
申请人： Tatsuo Shimizu , Atsuhiro Kinoshita
发明人： Tatsuo Shimizu , Atsuhiro Kinoshita
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , B82Y10/00 , G11C16/0466 , H01L21/28282 , H01L27/11568 , H01L29/42348 , H01L29/66833
摘要： According to one embodiment, in a semiconductor memory device, a source region and a drain region are disposed away from each other in the semiconductor layer. A tunnel insulating film is formed between the source region and the drain region on the semiconductor layer. A charge accumulating film includes an oxide cluster and is formed on the tunnel insulating film. A block insulating film is formed on the charge accumulating film. A gate electrode is formed on the block insulating film. The oxide cluster includes either Zr or Hf, and further contains at least one element selected from Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au and Hg.
摘要翻译：根据一个实施例，在半导体存储器件中，源极区域和漏极区域在半导体层中彼此远离地设置。在半导体层上的源极区域和漏极区域之间形成隧道绝缘膜。电荷累积膜包括氧化物簇并形成在隧道绝缘膜上。在电荷累积膜上形成块绝缘膜。栅电极形成在块绝缘膜上。氧化物簇包括Zr或Hf，还含有选自Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Nb，Mo，Tc，Ru，Rh，Pd，Ag中的至少一种元素， Cd，Ta，W，Re，Os，Ir，Pt，Au和Hg。

8. 发明授权

US07960793B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07960793B2
公开(公告)日：2011-06-14
申请号：US12370641
申请日：2009-02-13
申请人： Tatsuo Shimizu , Masato Koyama
发明人： Tatsuo Shimizu , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L21/823857 , H01L21/823821 , H01L21/823842 , H01L27/1203 , H01L29/785
摘要： According to one embodiment, it is possible to provide a semiconductor device provided with an MIS transistor which has an effective work function being, as much as possible, suitable for low threshold operation. A CMIS device provided with an electrode having an optimal effective work function and enabling low threshold operation to achieve by producing an in-gap level by the addition of a high valence metal in an Hf (or Zr) oxide and changing a position of the in-gap level by nitrogen or fluorine or the like has been realized.
摘要翻译：根据一个实施例，可以提供一种设置有MIS晶体管的半导体器件，该半导体器件具有尽可能多的适合于低阈值操作的有效功函数。具有电极的CMIS器件具有最佳的有效功函数，并且能够通过在Hf（或Zr）氧化物中添加高价金属而产生空隙间电平来实现低阈值操作，从而改变位于通过氮或氟等的差异水平已经实现。

9. 发明授权

US07859077B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07859077B2
公开(公告)日：2010-12-28
申请号：US11937730
申请日：2007-11-09
申请人： Kazushige Yamamoto , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Tatsuo Shimizu
IPC分类号： H01L31/06
CPC分类号： H01L27/1443 , H04B10/801
摘要： A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched.
摘要翻译：半导体器件包括：串联连接的n型MOS晶体管和p型MOS晶体管; 以及通过n型MOS晶体管的沟道上的绝缘膜和p型MOS晶体管的沟道延伸的第一栅极。通过向第一栅极提供光，产生电子和空穴，电子和空穴中的至少一个通过n型MOS晶体管的沟道上方，并且任一电子和空穴中的至少一个穿过在p型MOS晶体管的沟道之上，从而切换n型MOS晶体管和p型MOS晶体管。

10. 发明授权

US07809039B2 Light-emitting device and manufacturing method of the same 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US07809039B2
公开(公告)日：2010-10-05
申请号：US12409693
申请日：2009-03-24
申请人： Kazushige Yamamoto , Haruhiko Yoshida , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Haruhiko Yoshida , Tatsuo Shimizu
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , B82Y20/00 , H01S5/021 , H01S5/026 , H01S5/1032 , H01S5/1071 , H01S5/30 , H01S5/3224 , H01S5/34 , H01S5/3428
摘要： A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto.
摘要翻译：一种半导体发光装置，分别包括绝缘膜，形成在绝缘膜上的光谐振器，以及分别设置在光谐振器两侧的p电极和n电极。光谐振器包括：第一半导体布线和第二半导体布线，它们与其间隔开的空间平行设置，该空间比发射波长窄，设置在这些半导体布线两端的谐振镜，以及多个半导体超导体介于第一半导体布线和第二半导体布线之间并与这些半导体布线电连接的第一半导体布线与p电极电连接，第二半导体布线与n型电极电连接，电极，从而使得半导体超薄膜能够在注入电流时产生激光振荡。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式