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    • 2. 发明授权
    • Emitting device and manufacturing method therefor
    • 发光装置及其制造方法
    • US08653501B2
    • 2014-02-18
    • US13273165
    • 2011-10-13
    • Tetsuya TakeuchiTatsuro UchidaMitsuhiro Ikuta
    • Tetsuya TakeuchiTatsuro UchidaMitsuhiro Ikuta
    • H01L33/04
    • H01L33/34H01L33/06H01L33/16
    • Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.
    • 提供一种能够提高使用IV族半导体材料形成的发光层的发光效率并获得具有窄带的发射光谱的发光装置及其制造方法。 发光器件包括:具有电位限制结构的发射层,包括:包含IV族半导体材料的阱区; 以及与所述阱区相邻的阻挡区域,并且包括不同于所述阱区域中的IV族半导体材料的IV族半导体材料,其中:所述阱区域和所述势垒之间的界面上的所述阱区域的连续区域 区域到屏障区域的一部分包括细晶体; 并且除了包含微细晶体的连续区域之外的阻挡区域中的区域是无定形或多晶区域。
    • 7. 发明申请
    • PROCESS FOR PRODUCING SURFACE-EMITTING LASER AND PROCESS FOR PRODUCING SURFACE-EMITTING LASER ARRAY
    • 生产表面发射激光的工艺和生产表面发射激光阵列的方法
    • US20110165712A1
    • 2011-07-07
    • US12983536
    • 2011-01-03
    • Tatsuro Uchida
    • Tatsuro Uchida
    • H01L21/302
    • H01S5/18344H01S5/2081
    • Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a surface damage during the producing. The producing of the laser having the relief provided on a laminated semiconductor layer and a mesa structure, the process comprising the steps of: forming, on the layer, one of a first dielectric film and a first resist film having a first pattern for defining the mesa and a second pattern for defining the relief and then forming the other one of the films; forming a second resist film to cover the second pattern and expose the first pattern; and forming the mesa by removing the layer under the first pattern using the second resist film.
    • 提供了能够以高精度将表面起伏结构的中心轴与电流限制结构的中心轴对准的表面发射激光器的制造,以减少在制造期间的表面损伤。 具有提供在层叠半导体层和台面结构上的凸起的激光器的制造,该方法包括以下步骤:在该层上形成具有第一图案的第一电介质膜和第一抗蚀剂膜之一,用于限定 台面和用于限定浮雕然后形成另一个膜的第二图案; 形成第二抗蚀剂膜以覆盖第二图案并暴露第一图案; 以及通过使用第二抗蚀剂膜去除第一图案下的层来形成台面。
    • 8. 发明授权
    • Print layout and apparatus and method
    • 打印布局及设备及方法
    • US07916339B2
    • 2011-03-29
    • US11733121
    • 2007-04-09
    • Tatsuro Uchida
    • Tatsuro Uchida
    • G06K15/00
    • G06K15/02G06K15/021G06K15/181
    • This invention relates to a technique that prevents an image from falling outside a given range when a printer is controlled to form an image on an arbitrary medium while assuring a margin of a predetermined amount. A host computer shifts an image by only a partial amount of a target margin amount in a predetermined direction within an effective print range of a medium. Furthermore, the host computer controls a printer to form the image by further shifting the image by nearly the remaining amount of the target margin amount so as to form an image within the effective print range. In this way, since the host computer and printer add a margin in two steps, print data can be prevented from falling outside a given range upon processing a binding margin on the printer side.
    • 本发明涉及一种防止图像在给定范围内跌倒的技术,当打印机被控制以在任意介质上形成图像同时确保预定量的余量时。 主计算机仅在介质的有效打印范围内的预定方向上仅移动目标边缘量的部分量的图像。 此外,主机通过将图像进一步移动几乎剩余量的目标边距量来控制打印机以形成图像,以便在有效打印范围内形成图像。 以这种方式,由于主机和打印机在两个步骤中增加了一个余量,所以在处理打印机侧的装订边缘时,可以防止打印数据落在给定范围之外。
    • 10. 发明授权
    • Method for manufacturing optical element
    • 光学元件制造方法
    • US07795058B2
    • 2010-09-14
    • US12426425
    • 2009-04-20
    • Tatsuro Uchida
    • Tatsuro Uchida
    • H01L21/00
    • H01S5/18311B82Y20/00G02B6/1225H01S5/0655H01S5/105H01S5/2081H01S5/3211H01S5/34326H01S5/3436H01S2301/166
    • The present invention provides an optical element which can reliably acquire a difference of refractive indices between a member under a photonic crystal layer and the crystal layer without using such a stacking technique as in conventional processes; a method for manufacturing the optical element; and a semiconductor laser device with the use of the optical element. The optical element has the first layer 500 and the second layer 400 formed on a substrate 100, wherein the second layer includes pores and has a refractive-index periodically changing structure in which a refractive index periodically changes in an in-plane direction; and the first layer has an oxidized region with a lower refractive index than the refractive index of the second layer, in a lower side of the pores of the second layer.
    • 本发明提供一种能够可靠地获得光子晶体层下的构件与晶体层之间的折射率差而不使用如常规方法的堆叠技术的光学元件; 光学元件的制造方法; 以及使用该光学元件的半导体激光装置。 光学元件具有形成在基板100上的第一层500和第二层400,其中第二层包括孔,并且具有其中折射率在面内方向上周期性变化的折射率周期性变化的结构; 并且第一层的第二层的孔的下侧具有折射率低于第二层的折射率的氧化区域。