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1. 发明申请

US20130004727A1 METHOD FOR PRODUCING HEAT INSULATING LAMINATE STRUCTURE, HEAT INSULATING LAMINATE STRUCTURE, AND TRANSPARENT LAMINATE FILM FOR THE SAME 有权
标题翻译：用于生产热绝缘层压结构，热绝缘层压结构和透明层压膜的方法
公开(公告)号：US20130004727A1
公开(公告)日：2013-01-03
申请号：US13598036
申请日：2012-08-29
申请人： Hiroki INAGAKI , Tetsuya TAKEUCHI , Tetsuji NARASAKI , Masataka INUZUKA , Osamu GOTO
发明人： Hiroki INAGAKI , Tetsuya TAKEUCHI , Tetsuji NARASAKI , Masataka INUZUKA , Osamu GOTO
IPC分类号： B32B37/14 , B32B15/08 , B32B3/10 , B32B38/04 , B32B38/12
CPC分类号： B32B17/10036 , B32B17/10229 , B32B17/10761 , G02B5/282 , G02B2207/109 , Y10T156/10 , Y10T156/1082 , Y10T428/24479 , Y10T428/24612 , Y10T428/31678 , B32B17/10 , B32B2367/00
摘要： Disclosed is a method for producing a heat insulating laminate structure having an excellent solar radiation shielding capability as well as an excellent radio wave transparency. The method includes placing a transparent laminate film between two transparent substrates, the transparent laminate film having on at least one side of a transparent polymer film a laminated layer structure in which a metal oxide layer containing an organic component and a metal layer are laminated and grooves having widths of 30 μm or less are formed with dividing the metal layer; bonding the two substrates to each other through the transparent laminate film under application of a pressure; and promoting division of the metal layer in the transparent laminate film by the applied pressure to increase an overall surface resistance.
摘要翻译：公开了一种具有优异的太阳辐射屏蔽能力以及优异的无线电波透明度的隔热叠层结构体的制造方法。该方法包括将透明层压膜放置在两个透明基板之间，所述透明层压膜在透明聚合物膜的至少一侧具有层压层结构，其中层压包含有机成分和金属层的金属氧化物层，通过分割金属层形成宽度为30μm以下的宽度; 在施加压力下通过透明层压膜将两个基板彼此粘合; 并且通过施加的压力促进透明层压膜中的金属层的分离，以增加整个表面电阻。

2. 发明授权

US08116344B2 Red surface emitting laser element, image forming device, and image display apparatus 有权
标题翻译：红色表面发射激光元件，图像形成装置和图像显示装置
公开(公告)号：US08116344B2
公开(公告)日：2012-02-14
申请号：US12487619
申请日：2009-06-18
申请人： Tetsuya Takeuchi , Mamoru Uchida , Tomoyuki Miyamoto , Fumio Koyama
发明人： Tetsuya Takeuchi , Mamoru Uchida , Tomoyuki Miyamoto , Fumio Koyama
IPC分类号： H01S5/183
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/021 , H01S5/1039 , H01S5/18313 , H01S5/18358 , H01S5/2009 , H01S5/2013 , H01S5/2201 , H01S5/3072 , H01S5/3213 , H01S5/3436
摘要： A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
摘要翻译：红色表面发射激光元件包括第一反射器，包括p型半导体多层膜的第二反射器，第一反射器和第二反射器之间的有源层，以及在有源层和第二反射器之间的p型半导体间隔层反射器，p型半导体间隔层的厚度为100nm以上且350nm以下。

3. 发明授权

US07924900B2 Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array 有权
标题翻译：表面发射激光器，表面发射激光器的制造方法，表面发射激光器阵列，表面发射激光器阵列的制造方法和包括表面发射激光器阵列的光学装置
公开(公告)号：US07924900B2
公开(公告)日：2011-04-12
申请号：US12509632
申请日：2009-07-27
申请人： Tetsuya Takeuchi
发明人： Tetsuya Takeuchi
IPC分类号： H01L21/00 , H01S5/00 , H01S3/097
CPC分类号： H01S5/18391 , B82Y20/00 , H01S5/0421 , H01S5/18311 , H01S5/18358 , H01S5/18372 , H01S5/2022 , H01S5/34326
摘要： A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.
摘要翻译：一种表面发射激光器，其通过在基板上层叠下反射镜，有源层和上反射镜而构成，其包括在上反射镜的发光部中，用于控制由低反射率区域和凹入的高反射率区域，形成在低反射率区域的中心部分，并且以波长λ振荡，其中上反射镜由多层膜反射镜构成，基于由层叠多个层，多层膜反射镜包括在多层膜反射镜的发光周边部分中具有λ/ 8〜3λ/ 8范围内的光学厚度的相位调整层，以及吸收层在相位调整层中提供带 - 带吸收。

4. 发明申请

US20100252809A1 LIGHT EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS 有权
标题翻译：发光元件阵列和图像形成装置
公开(公告)号：US20100252809A1
公开(公告)日：2010-10-07
申请号：US12820460
申请日：2010-06-22
申请人： Tetsuya Takeuchi
发明人： Tetsuya Takeuchi
IPC分类号： H01L31/12 , H01L33/04
CPC分类号： H01L27/153 , B41J2/45 , H01L33/145 , H01L2924/0002 , Y10S257/918 , H01L2924/00
摘要： A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.
摘要翻译：包括通常用于发光元件区域的有源层的发光元件阵列，彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。并且设置在有源层和载流子注入层之间。

5. 发明授权

US07807485B2 Process for producing surface emitting laser, process for producing surface emitting laser array, and optical apparatus including surface emitting laser array produced by the process 有权
标题翻译：用于制造表面发射激光的方法，用于制造表面发射激光器阵列的方法以及包括由该方法制造的表面发射激光器阵列的光学装置
公开(公告)号：US07807485B2
公开(公告)日：2010-10-05
申请号：US12509551
申请日：2009-07-27
申请人： Tatsuro Uchida , Mitsuhiro Ikuta , Tetsuya Takeuchi
发明人： Tatsuro Uchida , Mitsuhiro Ikuta , Tetsuya Takeuchi
IPC分类号： H01L21/00 , H01S5/00
CPC分类号： H01S5/423 , H01S5/18311 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/209 , H01S5/34326 , H01S2301/166
摘要： Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
摘要翻译：提供一种制造表面发射激光器的方法，该表面发射激光器包括设置在层叠半导体层上的表面浮雕结构，包括以下步骤：向第一电介质膜转移用于限定台面结构的第一图案和用于限定表面浮雕的第二图案结构在同一过程中; 以及在所述第一电介质膜上形成第二电介质膜和在所述第一图案和所述第二图案转印到所述层叠半导体层的表面上。因此，表面浮雕结构的中心位置可以高精度地与电流限制结构的中心位置对准。

6. 发明授权

US07768021B2 Light emitting element array and image forming apparatus 有权
标题翻译：发光元件阵列和成像装置
公开(公告)号：US07768021B2
公开(公告)日：2010-08-03
申请号：US11609595
申请日：2006-12-12
申请人： Tetsuya Takeuchi
发明人： Tetsuya Takeuchi
IPC分类号： H01L29/207
CPC分类号： H01L27/153 , B41J2/45 , H01L33/145 , H01L2924/0002 , Y10S257/918 , H01L2924/00
摘要： A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.
摘要翻译：包括通常用于发光元件区域的有源层的发光元件阵列，彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。并且设置在有源层和载流子注入层之间。

7. 发明申请

US20080049329A1 OPTICAL DEVICE INCLUDING MULTILAYER REFLECTOR AND VERTICAL CAVITY SURFACE EMITTING LASER 失效
标题翻译：包括多层反射器和垂直孔表面发射激光的光学器件
公开(公告)号：US20080049329A1
公开(公告)日：2008-02-28
申请号：US11782221
申请日：2007-07-24
申请人： Tetsuya TAKEUCHI
发明人： Tetsuya TAKEUCHI
IPC分类号： G02B5/28
CPC分类号： H01S5/18369 , B82Y20/00 , H01L33/105 , H01S5/10 , H01S5/18358 , H01S5/3201 , H01S5/34306 , H01S5/34333 , H01S5/3436
摘要： Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not λ/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a deviation from an optical thickness of λ/4 can be suppressed to improve characteristics and yield. The optical device for generating light of a wavelength λ includes a reflector and an active layer. The reflector is a semiconductor multilayer reflector including a first layer and a second layer which are alternatively laminated and have different refractive indices. The first layer has an optical thickness smaller than λ/4. The second layer has an optical thickness larger than λ/4. The interface between the first layer and the second layer is located at neither a node nor an antinode of an optical intensity distribution within the reflector.
摘要翻译：提供了包括具有光学厚度不是λ/ 4的层的多层反射器的光学器件和使用该光学器件的垂直腔表面发射激光器。可以抑制由与λ/ 4的光学厚度的偏差引起的共振频率偏移或反射率的降低，从而改善特性和产率。用于产生波长λ的光的光学装置包括反射器和有源层。反射器是包括交替层叠并具有不同折射率的第一层和第二层的半导体多层反射器。第一层的光学厚度小于λ/ 4。第二层的光学厚度大于λ/ 4。第一层和第二层之间的界面不在反射器内的光强度分布的节点和波腹处。

8. 发明授权

US07311429B2 Vehicle lamp 有权
标题翻译：车灯
公开(公告)号：US07311429B2
公开(公告)日：2007-12-25
申请号：US11016944
申请日：2004-12-21
申请人： Tetsuya Takeuchi , Kunihiko Kurisu , Atsushi Yoshida , Hiroyuki Oshita
发明人： Tetsuya Takeuchi , Kunihiko Kurisu , Atsushi Yoshida , Hiroyuki Oshita
IPC分类号： B60Q1/04
CPC分类号： B60Q1/0052 , F21S41/337
摘要： A vehicle lamp can include a sidelight source that is provided in a headlight reflector and which is close to the front end and close to the outer circumference. A position reflector can be provided that is almost in the form of a ring in an integral or split state at the front end, and close to the outer circumference of the headlight reflector to reflect light from the sidelight source toward the front in a certain direction.
摘要翻译：车灯可以包括设置在大灯反射器中并且靠近前端并且靠近外圆周的侧光源。可以提供位置反射器，它几乎是在前端处于整体或分裂状态的环的形式，并且靠近头灯反射器的外周，以将来自侧光源的光沿着一定方向向前方反射。

9. 发明授权

US06955933B2 Light emitting diodes with graded composition active regions 失效
标题翻译：具有分级组成活性区的发光二极管
公开(公告)号：US06955933B2
公开(公告)日：2005-10-18
申请号：US09912589
申请日：2001-07-24
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
IPC分类号： H01L33/06 , H01L33/32 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译：根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。有源区包括作为量子阱层或阻挡层的第二半导体层。第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

10. 发明授权

US06690700B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US06690700B2
公开(公告)日：2004-02-10
申请号：US09833243
申请日：2001-04-10
申请人： Tetsuya Takeuchi , Yawara Kaneko , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
发明人： Tetsuya Takeuchi , Yawara Kaneko , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01S500
CPC分类号： H01S5/20 , H01L33/007 , H01L33/0075 , H01S5/2004 , H01S5/32341 , H01S2301/18
摘要： A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AlN and has a thickness greater than the thickness at which cracks would form if the second layer were grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.
摘要翻译：一种氮化物半导体器件，包括夹在第一层和第二层之间的第一层，第二层和缓冲层。第二层是包括AlN的单晶氮化物半导体材料的层，并且其厚度大于如果第二层直接在第一层上生长则形成裂纹的厚度。缓冲层是包含AlN的低温沉积氮化物半导体材料的层。将氮化物半导体器件并入半导体激光二极管使得激光二极管能够产生具有单峰的远场图案的相干光。

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