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    • 6. 发明申请
    • CIRCUITS AND METHODS FOR PERFORMANCE OPTIMIZATION OF SRAM MEMORY
    • SRAM存储器性能优化的电路和方法
    • US20160163379A1
    • 2016-06-09
    • US14562056
    • 2014-12-05
    • Texas Instruments Incorporated
    • Per Torstein RoineVinod MenezesMahesh MehendaleVamsi GullapalliPremkumar Seetharaman
    • G11C11/419G11C11/418
    • G11C11/419G11C7/1018G11C7/1039G11C7/12G11C11/4094G11C11/412
    • In aspects of the present application, circuitry for storing data is provided including a static random access memory (SRAM) circuit operable to store data in an array of SRAM cell circuits arranged in rows and columns, each SRAM cell coupled to a pair of complementary bit lines disposed along the columns of SRAM cells circuits, and one or more precharge circuits in the SRAM memory circuit coupled to one or more pairs of the complementary bit lines and operable to charge the pairs of complementary bit lines to a precharge voltage, responsive to a precharge control signal. The precharge control signal within the SRAM circuit is operable to cause coupling transistors within the SRAM circuit to couple a pair of complementary bit lines to the precharge voltage responsive to mode signals output from a memory controller circuit external to the SRAM circuit, indicating a bitline precharge is to be performed.
    • 在本申请的各方面中,提供了用于存储数据的电路,其中包括静态随机存取存储器(SRAM)电路,其可操作以将数据存储在以行和列布置的SRAM单元电路阵列中,每个SRAM单元耦合到一对互补位 沿着SRAM单元电路的列布置的线以及SRAM存储器电路中的一个或多个预充电电路,其耦合到一对或多对互补位线,并且可操作用于对互补位线对充电至预充电电压, 预充电控制信号。 SRAM电路内的预充电控制信号可操作以使SRAM电路内的耦合晶体管响应于从SRAM电路外部的存储器控​​制器电路输出的模式信号将一对互补位线耦合到预充电电压,指示位线预充电 将被执行。