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1. 发明授权

US09917507B2 Dynamic clock period modulation scheme for variable charge pump load currents 有权
公开(公告)号：US09917507B2
公开(公告)日：2018-03-13
申请号：US14724067
申请日：2015-05-28
申请人： SanDisk Technologies LLC
发明人： Gooty Sukumar Reddy , Potnuru Venkata Pradeep Kumar , Sridhar Yadala
IPC分类号： H03K3/03 , H02M3/07 , H03K3/354 , H02M1/44 , H02M1/08 , H03K17/687 , H02M3/00 , H03L7/18 , H03K3/0231 , H02M1/00
CPC分类号： H02M3/07 , H02M1/08 , H02M1/44 , H02M3/00 , H02M2001/0003 , H03K3/0231 , H03K3/354 , H03K17/687 , H03L7/18
摘要： A charge pump is connected to receive a supply voltage and a clock signal and generate an output voltage. The charge pump is connected to the supply voltage through a transistor whose gate voltage is set by a regulation voltage determined by feedback from the output voltage. The current supplied to the charge pump through this transistor is mirrored in a section that generates the clock signal, where the mirrored current is used by a current controller oscillator. This allows the pump's clock frequency to linearly track the load current, improving the pump's efficiency.

2. 发明申请

US20180040608A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
公开(公告)号：US20180040608A1
公开(公告)日：2018-02-08
申请号：US15722901
申请日：2017-10-02
申请人： SOCIONEXT INC.
发明人： Koichi TANIGUCHI , Masato MAEDE
IPC分类号： H01L27/02 , H01L27/092 , H01L23/50 , H01L23/528 , H01L29/06
CPC分类号： H01L27/0292 , H01L23/50 , H01L23/528 , H01L23/544 , H01L27/0207 , H01L27/0928 , H01L29/0619 , H01L29/0623 , H01L2924/0002 , H03K3/354 , H01L2924/00
摘要： A semiconductor chip including an internal circuit, a plurality of electrode pads and a plurality of I/O cells. The plurality of electrode pads are arranged on a first line, a second line and a third line. Each of the plurality of electrode pads arranged at least on the first and second lines overlaps corresponding one of the plurality of I/O cells in a plan view. The plurality of I/O cells are provided on a peripheral region of the semiconductor chip. Each of the plurality of I/O cells includes a protective circuit, and is connected to corresponding one of the plurality of electrode pads. The protective circuit includes a power source-side protective circuit provided between the corresponding one of the plurality of electrode pads and a power source wiring; and a ground-side protective circuit provided between the corresponding one of the plurality of electrode pads and a ground wiring.

3. 发明授权

US09853629B2 Oscillator circuit 有权
公开(公告)号：US09853629B2
公开(公告)日：2017-12-26
申请号：US14831862
申请日：2015-08-20
申请人： Infineon Technologies Austria AG
发明人： Mario Motz
IPC分类号： H03K3/282 , H03K3/354 , H03K3/0231 , H03K3/012
CPC分类号： H03K3/354 , H03K3/012 , H03K3/0231 , H03K3/2823
摘要： An oscillator circuit may include a multivibrator for generating an oscillator signal, a supply circuit having a first, second and third current path, and a current mirror for mirroring a current through the second current path into the first current path, the third current path and a current path of the multivibrator. A first transistor in the first current path is operated in weak inversion and saturation on the basis of a first gate voltage. A second transistor in the second current path may be operated in weak inversion and saturation on the basis of the first gate voltage. A third transistor in the second current path may be operated in strong inversion and in the linear region on the basis of a second gate voltage. A fourth transistor in the third current path may be operated in strong inversion and in saturation on the basis of the second gate voltage.

4. 发明授权

US09576947B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US09576947B2
公开(公告)日：2017-02-21
申请号：US15147555
申请日：2016-05-05
申请人： Socionext Inc.
发明人： Koichi Taniguchi , Masato Maede
IPC分类号： H01L27/02 , H01L23/50 , H01L23/528 , H01L29/06 , H03K3/354 , H01L27/092 , H01L23/544
CPC分类号： H01L27/0292 , H01L23/50 , H01L23/528 , H01L23/544 , H01L27/0207 , H01L27/0928 , H01L29/0619 , H01L29/0623 , H01L2924/0002 , H03K3/354 , H01L2924/00
摘要： In a semiconductor integrated circuit device, a plurality of electrode pads for external connection are arranged in a zigzag pattern. Some electrode pads of the electrode pads of the plurality of I/O cells which are closer to a side of the semiconductor chip, each have an end portion closer to the side of the semiconductor chip, the end portion being set at the same position as that of an end portion of the corresponding I/O cell. A power source-side protective circuit and a ground-side protective circuit against discharge of static electricity are provided with the power source-side protective circuit being closer to the scribe region. A distance between a center position of one of the electrode pads and the ground-side protective circuit of the corresponding I/O cell and a distance between a center position of the other one electrode pad and the ground-side protective circuit of the corresponding I/O cell are both short and are substantially equal between each I/O cell.
摘要翻译：在半导体集成电路器件中，用于外部连接的多个电极焊盘被布置成Z字形图案。多个I / O单元的靠近半导体芯片的一侧的电极焊盘的一些电极焊盘各自具有靠近半导体芯片侧的端部，其端部设置在与半导体芯片的相同位置对应的I / O单元的端部。电源侧保护电路靠近刻划区域设置有电源侧保护电路和防止静电放电的接地侧保护电路。一个电极焊盘的中心位置与相应的I / O单元的接地侧保护电路之间的距离以及另一个电极焊盘的中心位置与相应的I电极的接地侧保护电路之间的距离 / O单元都是短的，并且在每个I / O单元之间基本相等。

5. 发明申请

US20160352217A1 Dynamic Clock Period Modulation Scheme for Variable Charge Pump Load Currents 有权
标题翻译：可变电荷泵负载电流的动态时钟周期调制方案
公开(公告)号：US20160352217A1
公开(公告)日：2016-12-01
申请号：US14724067
申请日：2015-05-28
申请人： SanDisk Technologies Inc.
发明人： Gooty Sukumar Reddy , Potnuru Venkata Pradeep Kumar , Sridhar Yadala
IPC分类号： H02M3/07 , H03K3/354
CPC分类号： H02M3/07 , H02M1/08 , H02M1/44 , H02M3/00 , H02M2001/0003 , H03K3/0231 , H03K3/354 , H03K17/687 , H03L7/18
摘要： A charge pump is connected to receive a supply voltage and a clock signal and generate an output voltage. The charge pump is connected to the supply voltage through a transistor whose gate voltage is set by a regulation voltage determined by feedback from the output voltage. The current supplied to the charge pump through this transistor is mirrored in a section that generates the dock signal, where the mirrored current is used by a current controller oscillator. This allows the pump's clock frequency to linearly track the load current, improving the pump's efficiency.
摘要翻译：电荷泵被连接以接收电源电压和时钟信号并产生输出电压。电荷泵通过晶体管连接到电源电压，晶体管的栅极电压由通过输出电压的反馈确定的调节电压设置。通过该晶体管提供给电荷泵的电流反映在产生停靠信号的部分中，其中镜像电流由电流控制器振荡器使用。这允许泵的时钟频率线性跟踪负载电流，提高泵的效率。

6. 发明申请

US20150214215A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：半导体集成电路设备
公开(公告)号：US20150214215A1
公开(公告)日：2015-07-30
申请号：US14684323
申请日：2015-04-10
申请人： SOCIONEXT INC.
发明人： Koichi TANIGUCHI , Masato MAEDE
IPC分类号： H01L27/02
CPC分类号： H01L27/0292 , H01L23/50 , H01L23/528 , H01L23/544 , H01L27/0207 , H01L27/0928 , H01L29/0619 , H01L29/0623 , H01L2924/0002 , H03K3/354 , H01L2924/00
摘要： In a semiconductor integrated circuit device, a plurality of electrode pads for external connection are arranged in a zigzag pattern. Some electrode pads of the electrode pads of the plurality of I/O cells which are closer to a side of the semiconductor chip, each have an end portion closer to the side of the semiconductor chip, the end portion being set at the same position as that of an end portion of the corresponding I/O cell. A power source-side protective circuit and a ground-side protective circuit against discharge of static electricity are provided with the power source-side protective circuit being closer to the scribe region. A distance between a center position of one of the electrode pads and the ground-side protective circuit of the corresponding I/O cell and a distance between a center position of the other one electrode pad and the ground-side protective circuit of the corresponding I/O cell are both short and are substantially equal between each I/O cell.
摘要翻译：在半导体集成电路器件中，多个用于外部连接的电极焊盘以锯齿形图案布置。多个I / O单元的靠近半导体芯片的一侧的电极焊盘的一些电极焊盘各自具有靠近半导体芯片侧的端部，其端部设置在与半导体芯片的相同位置对应的I / O单元的端部。电源侧保护电路靠近刻划区域设置有电源侧保护电路和防止静电放电的接地侧保护电路。一个电极焊盘的中心位置与相应的I / O单元的接地侧保护电路之间的距离以及另一个电极焊盘的中心位置与相应I电极的接地侧保护电路之间的距离 / O单元都是短的，并且在每个I / O单元之间基本相等。

7. 发明申请

US20150035611A1 VCO WITH LINEAR GAIN OVER A VERY WIDE TUNING RANGE 有权
标题翻译：具有线性增益的VCO在非常宽的调谐范围内
公开(公告)号：US20150035611A1
公开(公告)日：2015-02-05
申请号：US13954277
申请日：2013-07-30
申请人： QUALCOMM Incorporated
发明人： Ashok Swaminathan , Ian Galton
IPC分类号： H03K3/354
CPC分类号： H03K3/354 , H03B5/24
摘要： An oscillating circuit with linear gain is presented. The oscillating circuit may include a relaxation oscillator and a current compensation block. The relaxation oscillator includes a capacitor, a pair of resistors operative to deliver a first current to the capacitor, and a first current source adapted to generate the first current having a first predefined level. The current compensation block includes a second current source, and a pair of cross-coupled transistors coupled to the second current source and adapted to steer a current exceeding the first predefined level in the relaxation oscillator away from the capacitor and to the second current source. The proposed oscillating circuit generates an output signal which has a linear gain over a wide tuning range.
摘要翻译：提出了一种具有线性增益的振荡电路。振荡电路可以包括张弛振荡器和电流补偿模块。张弛振荡器包括电容器，一对电阻器，用于向电容器传送第一电流;以及第一电流源，适于产生具有第一预定电平的第一电流。电流补偿块包括第二电流源和耦合到第二电流源的一对交叉耦合晶体管，并且适于将稳定在振荡器中的第一预定电平的电流从电容器转移到第二电流源。所提出的振荡电路产生在宽的调谐范围内具有线性增益的输出信号。

8. 发明申请

US20140327486A1 RC Oscillator 有权
标题翻译： RC振荡器
公开(公告)号：US20140327486A1
公开(公告)日：2014-11-06
申请号：US13887434
申请日：2013-05-06
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Per Torstein Roine , Danielle L. Griffith , Ryan A. Smith
IPC分类号： H03B5/12
CPC分类号： H03B5/24 , H03K3/03 , H03K3/0315 , H03K3/354 , H03L7/099
摘要： In an electronic device, an RC oscillator generally includes a resistor, a capacitor and at least one inverter. The resistor and capacitor generate a time-varying voltage. The time-varying voltage is provided to the at least one inverter to cause a clock signal to propagate therethrough. The clock signal propagates with a time delay that is at least partially dependent on a supply voltage. The supply voltage is adjusted to maintain the time delay at almost a constant value.
摘要翻译：在电子设备中，RC振荡器通常包括电阻器，电容器和至少一个逆变器。电阻和电容产生时变电压。时变电压被提供给至少一个逆变器以使时钟信号传播通过。时钟信号以至少部分取决于电源电压的时间延迟传播。调整电源电压以将时间延迟保持在几乎恒定的值。

9. 发明申请

US20140246703A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20140246703A1
公开(公告)日：2014-09-04
申请号：US14276940
申请日：2014-05-13
申请人： PANASONIC CORPORATION
发明人： Koichi TANIGUCHI , Masato MAEDE
IPC分类号： H01L27/02 , H01L23/544
CPC分类号： H01L27/0292 , H01L23/50 , H01L23/528 , H01L23/544 , H01L27/0207 , H01L27/0928 , H01L29/0619 , H01L29/0623 , H01L2924/0002 , H03K3/354 , H01L2924/00
摘要： In a semiconductor integrated circuit device, a plurality of electrode pads for external connection are arranged in a zigzag pattern. Some electrode pads of the electrode pads of the plurality of I/O cells which are closer to a side of the semiconductor chip, each have an end portion closer to the side of the semiconductor chip, the end portion being set at the same position as that of an end portion of the corresponding I/O cell. A power source-side protective circuit and a ground-side protective circuit against discharge of static electricity are provided with the power source-side protective circuit being closer to the scribe region. A distance between a center position of one of the electrode pads and the ground-side protective circuit of the corresponding I/O cell and a distance between a center position of the other one electrode pad and the ground-side protective circuit of the corresponding I/O cell are both short and are substantially equal between each I/O cell.
摘要翻译：在半导体集成电路器件中，多个用于外部连接的电极焊盘以锯齿形图案布置。多个I / O单元的靠近半导体芯片的一侧的电极焊盘的一些电极焊盘各自具有靠近半导体芯片侧的端部，其端部设置在与半导体芯片的相同位置对应的I / O单元的端部。电源侧保护电路靠近刻划区域设置有电源侧保护电路和防止静电放电的接地侧保护电路。一个电极焊盘的中心位置与相应的I / O单元的接地侧保护电路之间的距离以及另一个电极焊盘的中心位置与相应的I电极的接地侧保护电路之间的距离 / O单元都是短的，并且在每个I / O单元之间基本相等。

10. 发明授权

US08759883B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US08759883B2
公开(公告)日：2014-06-24
申请号：US12786090
申请日：2010-05-24
申请人： Koichi Taniguchi , Masato Maede
发明人： Koichi Taniguchi , Masato Maede
IPC分类号： H01L23/52
CPC分类号： H01L27/0292 , H01L23/50 , H01L23/528 , H01L23/544 , H01L27/0207 , H01L27/0928 , H01L29/0619 , H01L29/0623 , H01L2924/0002 , H03K3/354 , H01L2924/00
摘要： In a semiconductor integrated circuit device, a plurality of electrode pads for external connection are arranged in a zigzag pattern. Some electrode pads of the electrode pads of the plurality of I/O cells which are closer to a side of the semiconductor chip, each have an end portion closer to the side of the semiconductor chip, the end portion being set at the same position as that of an end portion of the corresponding I/O cell. A power source-side protective circuit and a ground-side protective circuit against discharge of static electricity are provided with the power source-side protective circuit being closer to the scribe region. A distance between a center position of one of the electrode pads and the ground-side protective circuit of the corresponding I/O cell and a distance between a center position of the other one electrode pad and the ground-side protective circuit of the corresponding I/O cell are both short and are substantially equal between each I/O cell.
摘要翻译：在半导体集成电路器件中，多个用于外部连接的电极焊盘以锯齿形图案布置。多个I / O单元的靠近半导体芯片的一侧的电极焊盘的一些电极焊盘各自具有靠近半导体芯片侧的端部，其端部设置在与半导体芯片的相同位置对应的I / O单元的端部。电源侧保护电路靠近刻划区域设置有电源侧保护电路和防止静电放电的接地侧保护电路。一个电极焊盘的中心位置与相应的I / O单元的接地侧保护电路之间的距离以及另一个电极焊盘的中心位置与相应的I电极的接地侧保护电路之间的距离 / O单元都是短的，并且在每个I / O单元之间基本相等。

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