专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070241766A1 Semiconductor integrated circuit 审中-公开
标题翻译：半导体集成电路
公开(公告)号：US20070241766A1
公开(公告)日：2007-10-18
申请号：US11783128
申请日：2007-04-06
申请人： Tsunetomo Kamitai , Katsuya Fujimura , Daiju Kitamoto , Hirofumi Taguchi , Kasumi Hamaguchi , Takahisa Tokushige
发明人： Tsunetomo Kamitai , Katsuya Fujimura , Daiju Kitamoto , Hirofumi Taguchi , Kasumi Hamaguchi , Takahisa Tokushige
IPC分类号： G01R31/02
CPC分类号： G01R31/2884 , H01L22/32
摘要： A semiconductor integrated circuit includes a wiring capable of connecting a plurality of chips on a wafer and has a configuration which is capable of cutting the wiring electrically and which allows all the chips to be tested at one time. Specifically, an exclusive test circuit region capable of being shared for testing the plurality of chips is formed on the wafer, and a test circuit is removed from each chip. Terminals of the chips and a terminal of the test circuit are connected through a wiring on the wafer or a device outside the wafer to enable a general test to be performed in burn-in.
摘要翻译：半导体集成电路包括能够连接晶片上的多个芯片的布线，并且具有能够电气切断布线的结构，并且允许一次测试所有的芯片。具体地，在晶片上形成能够共享用于测试多个芯片的专用测试电路区域，并且从每个芯片去除测试电路。芯片的端子和测试电路的端子通过晶片上的布线或晶片外部的器件连接，使得能够进行老化的一般测试。

2. 发明申请

US20080309378A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080309378A1
公开(公告)日：2008-12-18
申请号：US12042956
申请日：2008-03-05
申请人： Masaya Hirose , Kinya Daio , Hiroki Taniguchi , Kazunari Ikeda , Takahisa Tokushige
发明人： Masaya Hirose , Kinya Daio , Hiroki Taniguchi , Kazunari Ikeda , Takahisa Tokushige
IPC分类号： G01R31/26
CPC分类号： G01R31/2884 , G01R19/16552
摘要： A semiconductor device 10a includes a normal circuit 11 and a voltage fluctuation detection circuit 12a connected to a power supply 100 in common with the normal circuit 11. The voltage fluctuation detection circuit 12a includes an inverting amplifier 13a, a switching element 14, which is connected between input and output terminals of the inverting amplifier 13a, and a capacitance element 15 connected to the input terminal of the inverting amplifier 13a. After the normal circuit 11 and the switching element 14 are set to an operating state and ON state, respectively, when the switching element 14 is set to OFF state at an arbitrary time, charge corresponding to a power supply voltage Vc0 at that time accumulates in the capacitance element 15. After the normal circuit 11 is set to a suspended state, a potential VDD of the power supply 100 is set to an arbitrary value, and the inverting amplifier 13a compares the value of a power supply voltage Vc with the voltage value Vc0 corresponding to the charge held in the capacitance element 15.
摘要翻译：半导体器件10a包括正常电路11和与普通电路11相同的电源100连接的电压波动检测电路12a。电压波动检测电路12a包括反相放大器13a，开关元件14，其连接在反相放大器13a的输入和输出端之间，连接到反相放大器13a的输入端的电容元件15。在正常电路11和开关元件14分别设定为工作状态和接通状态之后，当在任意时刻将开关元件14设定为断开状态时，与此时的电源电压Vc0对应的电荷累积在电容元件15.在正常电路11被设置为暂停状态之后，电源100的电位VDD被设定为任意值，并且反相放大器13a将电源电压Vc的值与电压值 Vc0对应于保持在电容元件15中的电荷。

3. 发明授权

US07777512B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07777512B2
公开(公告)日：2010-08-17
申请号：US12042956
申请日：2008-03-05
申请人： Masaya Hirose , Kinya Daio , Hiroki Taniguchi , Kazunari Ikeda , Takahisa Tokushige
发明人： Masaya Hirose , Kinya Daio , Hiroki Taniguchi , Kazunari Ikeda , Takahisa Tokushige
IPC分类号： G01R31/317 , G06F11/273
CPC分类号： G01R31/2884 , G01R19/16552
摘要： A semiconductor device 10a includes a normal circuit 11 and a voltage fluctuation detection circuit 12a connected to a power supply 100 in common with the normal circuit 11. The voltage fluctuation detection circuit 12a includes an inverting amplifier 13a, a switching element 14, which is connected between input and output terminals of the inverting amplifier 13a, and a capacitance element 15 connected to the input terminal of the inverting amplifier 13a. After the normal circuit 11 and the switching element 14 are set to an operating state and ON state, respectively, when the switching element 14 is set to OFF state at an arbitrary time, charge corresponding to a power supply voltage Vc0 at that time accumulates in the capacitance element 15. After the normal circuit 11 is set to a suspended state, a potential VDD of the power supply 100 is set to an arbitrary value, and the inverting amplifier 13a compares the value of a power supply voltage Vc with the voltage value Vc0 corresponding to the charge held in the capacitance element 15.
摘要翻译：半导体器件10a包括正常电路11和与普通电路11相同的电源100连接的电压波动检测电路12a。电压波动检测电路12a包括反相放大器13a，开关元件14，其连接在反相放大器13a的输入和输出端之间，连接到反相放大器13a的输入端的电容元件15。在正常电路11和开关元件14分别设定为工作状态和接通状态之后，当在任意时刻将开关元件14设定为断开状态时，与此时的电源电压Vc0对应的电荷累积在电容元件15.在正常电路11被设置为暂停状态之后，电源100的电位VDD被设定为任意值，并且反相放大器13a将电源电压Vc的值与电压值 Vc0对应于保持在电容元件15中的电荷。

4. 发明授权

US5944491A Piston-type compressor with improved shock absorption during start up 失效
标题翻译：活塞式压缩机在起动时具有改善的减震能力
公开(公告)号：US5944491A
公开(公告)日：1999-08-31
申请号：US797594
申请日：1997-02-07
申请人： Naoya Yakomachi , Satoshi Umemura , Hayato Ikeda , Takahisa Tokushige
发明人： Naoya Yakomachi , Satoshi Umemura , Hayato Ikeda , Takahisa Tokushige
IPC分类号： F04B49/06 , F04B27/08 , F04B27/10 , F04B49/24 , F04B1/26
CPC分类号： F04B49/246 , F04B2205/03
摘要： An improved compressor that is designed to minimize shock and vibration during start-up includes a plurality of pistons, each of which is positioned for movement within a cylinder in order to compress a gas, and conventional motive structure for driving the pistons. Advantageously, the compressor includes a sensor for sensing, from a condition that exists within the compressor, when the compressor is in a start-up phase. The sensor is designed to be operative regardless of the position of the pistons during start-up. Pressure relief structure, responsive to said sensor, is provided for relieving pressure in at least one of the cylinders when the sensor indicates that the compressor is in the start-up phase. This minimizes shock and vibration during the start-up.
摘要翻译：设计成使启动期间的冲击和振动最小化的改进的压缩机包括多个活塞，每个活塞定位成在气缸内移动以便压缩气体，以及用于驱动活塞的常规动力结构。有利地，压缩机包括用于当压缩机处于启动阶段时从存在于压缩机内的状态感测的传感器。传感器设计为无论活塞在启动过程中的位置如何，均可运行。当传感器指示压缩机处于起动阶段时，提供响应于所述传感器的减压结构，用于在至少一个气缸中减轻压力。这样可以最大限度地减少启动过程中的冲击和振动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式