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1. 发明授权

US09089846B2 Media-agitation type pulverizer 有权
标题翻译：介质搅拌式粉碎机
公开(公告)号：US09089846B2
公开(公告)日：2015-07-28
申请号：US14122711
申请日：2012-07-23
申请人： Tsuyoshi Ishikawa , Shogo Iwasawa , Takahiro Tamura
发明人： Tsuyoshi Ishikawa , Shogo Iwasawa , Takahiro Tamura
IPC分类号： B02C17/16 , B02C17/18
CPC分类号： B02C17/1815 , B02C17/16 , B02C17/161 , B02C17/168 , B02C17/18 , B02C17/184
摘要： A media-agitation pulverizer is capable of creating a uniformized, stable helicoidal flow in a mixture of pulverizing media and a raw material slurry, thereby performing pulverization/dispersion uniformly with satisfactory energy efficiency. The media-agitation pulverizer includes a guide ring installed to radially divide a lower region of a pulverization chamber into an inner section and an annular outer section, whereby a flow of a mixture of a raw material slurry and pulverizing media is formed as a helicoidal flow including a secondary flow flowing through a circulation flow path with respect to the guide ring; and rotational-flow suppressing device is provided within the pulverization chamber and adapted to strengthen the secondary flow of the helicoidal flow, thereby stabilizing the helicoidal flow.
摘要翻译：介质搅拌粉碎机能够在粉碎介质和原料浆料的混合物中产生均匀稳定的螺旋流，从而以令人满意的能量效率均匀地进行粉碎/分散。介质搅拌式粉碎机包括导向环，其安装成将粉碎室的下部区域径向分割成内部区段和环形外部区段，由此将原料浆料和粉碎介质的混合物的流动形成为螺旋形流动包括流过相对于所述导向环的循环流动路径的二次流; 并且旋转流动抑制装置设置在粉碎室内并且适于加强螺旋流的二次流动，从而稳定螺旋流。

2. 发明授权

US08839130B2 Electronic apparatus, program, and control method 有权
标题翻译：电子仪器，程序和控制方法
公开(公告)号：US08839130B2
公开(公告)日：2014-09-16
申请号：US13469703
申请日：2012-05-11
申请人： Tomohisa Tanaka , Tsuyoshi Ishikawa , Qihong Wang , Akihiro Komori
发明人： Tomohisa Tanaka , Tsuyoshi Ishikawa , Qihong Wang , Akihiro Komori
IPC分类号： G06F3/048 , G06F3/041
CPC分类号： G06F3/041 , G06F3/048 , G06F3/04817 , G06F3/0486 , G06F3/0488
摘要： An electronic apparatus includes a display unit, a sensor, and a controller. The display unit includes a screen. The sensor is configured to detect a user operation with respect to the screen and output a signal corresponding to the user operation. The controller is configured to cause a data icon to be displayed on the screen, judge a drag operation with respect to the data icon based on the signal from the sensor, judge, based on the signal from the sensor, a user operation different from the drag operation for one of copying and moving data related to the data icon based on the drag operation, and execute processing for one of copying and moving the data according to the user operation.
摘要翻译：电子设备包括显示单元，传感器和控制器。显示单元包括一个屏幕。传感器被配置为检测用户对屏幕的操作并输出与用户操作相对应的信号。控制器被配置为使得数据图标被显示在屏幕上，基于来自传感器的信号判断相对于数据图标的拖动操作，基于来自传感器的信号判断与基于拖动操作来复制和移动与数据图标有关的数据之一的拖动操作，以及根据用户操作执行复制和移动数据之一的处理。

3. 发明授权

US08609055B2 Method of producing fluoroapatite, fluoroapatite, and adsorption apparatus 有权
标题翻译：产生氟磷灰石，氟磷灰石和吸附装置的方法
公开(公告)号：US08609055B2
公开(公告)日：2013-12-17
申请号：US12199112
申请日：2008-08-27
申请人： Tsuyoshi Ishikawa , Yoshiyuki Ogawara , Tomohiko Yoshitake , Yukiki Murakami
发明人： Tsuyoshi Ishikawa , Yoshiyuki Ogawara , Tomohiko Yoshitake , Yukiki Murakami
IPC分类号： C01B25/00 , C01F1/00
CPC分类号： B01J20/048 , C01B25/455
摘要： A method of producing fluoroapatite by using a calcium-based compound containing calcium, hydrogen fluoride and phosphoric acid is provided. The method can be produced fluoroapatite having improved acid resistance by reducing an amount of an impurity derived from a raw material to a low or very low level, and ability capable of separating a large amount of a protein due to a large specific surface area thereof. Further, fluoroapatite having high acid resistance and a large specific surface area is also provided. Furthermore, an adsorption apparatus using such fluoroapatite is also provided.
摘要翻译：提供了通过使用含有钙，氟化氢和磷酸的钙基化合物制备氟磷灰石的方法。该方法可以通过将从原料衍生的杂质的量减少至低或非常低的水平，以及由于其大的比表面积而能够分离大量蛋白质的能力，可以制备具有改善的耐酸性的氟磷灰石。此外，还提供了具有高耐酸性和大比表面积的氟磷灰石。此外，还提供了使用这种氟磷灰石的吸附装置。

4. 发明申请

US20130330896A1 MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：碳化硅半导体器件的制造方法
公开(公告)号：US20130330896A1
公开(公告)日：2013-12-12
申请号：US14000901
申请日：2012-09-04
申请人： Shinichiro Miyahara , Toshimasa Yamamoto , Hidefumi Takaya , Masahiro Sugimoto , Yukihiko Watanabe , Narumasa Soejima , Tsuyoshi Ishikawa
发明人： Shinichiro Miyahara , Toshimasa Yamamoto , Hidefumi Takaya , Masahiro Sugimoto , Yukihiko Watanabe , Narumasa Soejima , Tsuyoshi Ishikawa
IPC分类号： H01L29/66
CPC分类号： H01L29/66666 , H01L21/3065 , H01L29/1608 , H01L29/34 , H01L29/4236 , H01L29/66068 , H01L29/7813
摘要： A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.
摘要翻译：碳化硅半导体器件的制造方法包括：在碳化硅衬底上形成漂移层; 在漂移层的表面部分上或其中形成基底层; 在所述基底层的表面部分中形成源区; 形成沟槽以穿透基层并到达漂移层; 在沟槽中的栅极绝缘膜上形成栅电极; 形成与源极区域和基极层电连接的源电极; 以及在所述基板的背面上形成漏电极。沟槽的形成包括：使基底表面变平; 并进行蚀刻以在平坦化之后形成沟槽。

5. 发明申请

US20120181551A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：硅碳化硅半导体器件
公开(公告)号：US20120181551A1
公开(公告)日：2012-07-19
申请号：US13348781
申请日：2012-01-12
申请人： Shinichiro Miyahara , Hidefumi Takaya , Masahiro Sugimoto , Yukihiko Watanabe , Narumasa Soejima , Tsuyoshi Ishikawa
发明人： Shinichiro Miyahara , Hidefumi Takaya , Masahiro Sugimoto , Yukihiko Watanabe , Narumasa Soejima , Tsuyoshi Ishikawa
IPC分类号： H01L29/24
CPC分类号： H01L21/0475 , H01L29/045 , H01L29/24 , H01L29/42356 , H01L29/66068
摘要： A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a (0001) plane or a (000-1) plane and has an offset direction in a direction. The trench is provided from a surface of the silicon carbide semiconductor substrate. The trench extends in a direction whose interior angle with respect to the offset direction is 30 degrees or −30 degrees.
摘要翻译：碳化硅半导体器件包括碳化硅半导体衬底和沟槽。碳化硅半导体衬底相对于（0001）面或（000-1）面具有偏移角，并且在<11-20>方向上具有偏移方向。从碳化硅半导体衬底的表面提供沟槽。沟槽沿相对于偏移方向的内角为30度或-30度的方向延伸。

6. 发明申请

US20110309464A1 SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HAVING HIGH BREAKDOWN VOLTAGE STRUCTURE 有权
标题翻译：包含高电压电压结构的电池区域和外围区域的半导体器件
公开(公告)号：US20110309464A1
公开(公告)日：2011-12-22
申请号：US13164246
申请日：2011-06-20
申请人： Kensaku YAMAMOTO , Naohiro Suzuki , Hidefumi Takaya , Masahiro Sugimoto , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
发明人： Kensaku YAMAMOTO , Naohiro Suzuki , Hidefumi Takaya , Masahiro Sugimoto , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
IPC分类号： H01L29/06
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0661 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/407 , H01L29/66068 , H01L29/7397 , H01L29/7811 , H01L29/8613
摘要： A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.
摘要翻译：半导体器件包括半导体衬底和电场端子部分。半导体衬底包括衬底，设置在衬底的表面上的漂移层和设置在漂移层的表面上的基底层。半导体衬底被分成其中设置半导体元件的单元区域和围绕单元区域的外围区域。基底区域具有位于整个电池区域和外围区域的同一平面上的底面，并且提供位于周边区域中的电场弛豫层。电场端子部围绕电池区域和电场缓和层的一部分，从电场缓和层的表面向漂移层贯通电场缓和层。

7. 再颁专利

USRE41995E1 Tapered light guide plate for surface light source device and method of making by injection molding via supplementary cavity 有权
标题翻译：用于表面光源装置的锥形导光板和通过辅助腔注射成型的方法
公开(公告)号：USRE41995E1
公开(公告)日：2010-12-14
申请号：US11165241
申请日：2005-06-24
申请人： Tsuyoshi Ishikawa , Hiroshi Yamazaki
发明人： Tsuyoshi Ishikawa , Hiroshi Yamazaki
IPC分类号： F21V7/10 , B29D11/00
CPC分类号： G02B6/0046 , B29C45/0025 , B29C2045/0027 , B29C2045/2695 , B29D11/00663 , B29K2995/0026 , B29L2011/0075 , G02B6/0001 , G02B6/0065 , Y10S385/901
摘要： There is provided a very thin light guide plate for a surface light source device and a method of manufacturing it without the use of high-precision molding machine. A surface light source device using this light guide plate generates outgoing light having high uniformity. According to the manufacturing method, a light guide plate free from a weld line or warp can be manufactured with good transferring characteristics. The light guide plate is thick on an incident surface 1 side and thin on a lower surface 4 side. At the central portion of an incident surface 1 in a longitudinal direction, a projecting portion obtained by cutting an overhang portion 7 at a position a distance D apart from the incident surface 1 is formed. The cut surface of the projecting portion is not made specular and is kept rough. In molding of the light guide plate, a molten material is supplied from the position of a gate mark 9. After molding, the overhang portion 7 is cut off by an ordinary cutter, thereby obtaining a light guide plate.
摘要翻译：提供了一种用于表面光源装置的非常薄的导光板及其制造方法，而不需要使用高精度成型机。使用该导光板的面光源装置产生高均匀性的出射光。根据制造方法，可以制造没有焊接线或翘曲的导光板，具有良好的转印特性。导光板在入射面1侧较厚，在下表面4侧较薄。在入射面1的长度方向的中央部形成有通过在与入射面1分开的距离D的位置处切断突出部7而得到的突出部。突出部分的切割表面不是镜面的并且保持粗糙。在导光板的成型中，从浇口标记9的位置供给熔融材料。在模制之后，通过普通切割器切断突出部分7，从而获得导光板。

8. 发明授权

US07740820B2 Method of producing fluoroapatite, fluoroapatite, and adsorption apparatus 有权
标题翻译：产生氟磷灰石，氟磷灰石和吸附装置的方法
公开(公告)号：US07740820B2
公开(公告)日：2010-06-22
申请号：US12184459
申请日：2008-08-01
申请人： Tsuyoshi Ishikawa , Yoshiyuki Ogawara , Tomohiko Yoshitake , Yukiko Murakami
发明人： Tsuyoshi Ishikawa , Yoshiyuki Ogawara , Tomohiko Yoshitake , Yukiko Murakami
IPC分类号： C01B25/10 , C01B25/12
CPC分类号： C01B25/455 , B01J20/048 , B01J20/281 , B01J20/3028 , B01J20/3078
摘要： A method of producing a fluoroapatite is provided. The method comprises preparing a slurry containing a hydroxyapatite which has at least one hydroxyl group, preparing a hydrogen fluoride-containing solution containing a hydrogen fluoride, mixing the hydrogen fluoride-containing solution with the slurry to obtain a mixture to thereby adjust a pH of the mixture in the range of 2.5 to 5, and reacting the hydroxyapatite with the hydrogen fluoride in the mixture in a state that the pH of the mixture is adjusted within the above range to thereby obtain the fluoroapatite by substituting the at least one hydroxyl group of the hydroxyapatite with fluorine atom of the hydrogen fluoride. The method can produce the fluoroapatite having improved acid resistance by reducing an impurity, such as ammonia, derived from a raw material to a low or very low level. Further, a fluoroapatite having high acid resistance is also provided. Furthermore, an adsorption apparatus using such a fluoroapatite is provided.
摘要翻译：提供一种制备氟磷灰石的方法。该方法包括制备含有至少一个羟基的羟基磷灰石的浆料，制备含氟化氢的含氟化氢溶液，将含氟化氢的溶液与浆料混合，得到混合物，从而调节混合物在2.5至5的范围内，并且使混合物中的羟基磷灰石与氟化氢在调节到上述范围内的状态下反应，从而通过将该磷灰石的至少一个羟基取代羟基磷灰石与氟化氢的氟原子。该方法可以通过将源自原料的诸如氨的杂质还原到低或非常低的水平来产生具有改善的耐酸性的氟磷灰石。此外，还提供了具有高耐酸性的氟磷灰石。此外，提供了使用这种氟磷灰石的吸附装置。

9. 发明申请

US20090242673A1 Media mixing mill 有权
标题翻译：媒体搅拌机
公开(公告)号：US20090242673A1
公开(公告)日：2009-10-01
申请号：US12384025
申请日：2009-03-31
申请人： Tsuyoshi Ishikawa
发明人： Tsuyoshi Ishikawa
IPC分类号： B02C17/18 , B02C23/08 , B02C23/18
CPC分类号： B02C17/161 , B02C17/163 , B02C17/168 , B02C17/1815
摘要： Disclosed is a media mixing mill, which is capable of obtaining a high-quality product while ensuring adequate pulverization/dispersion functions. The media mixing mill of the present invention comprises a grinding container having a material inlet and a spherical-shaped grinding chamber, an agitating member rotatably installed inside the grinding chamber and in adjacent relation to an inner wall of the grinding container, grinding media contained in the grinding chamber, and a centrifugal-type media-separating member rotatably disposed inside the grinding chamber and in opposed relation to the agitating member.
摘要翻译：公开了一种能够在确保足够的粉碎/分散功能的同时获得高质量产品的介质混合机。本发明的介质混合机包括具有材料入口和球形研磨室的研磨容器，可旋转地安装在研磨室内并且与研磨容器的内壁相邻的搅拌构件，包含在研磨室中的研磨介质研磨室和可旋转地设置在研磨室内并与搅拌构件相对的离心式介质分离构件。

10. 发明授权

US06815384B2 Method for manufacturing sintered piece 失效
标题翻译：烧结片的制造方法
公开(公告)号：US06815384B2
公开(公告)日：2004-11-09
申请号：US10290160
申请日：2002-11-08
申请人： Tsuyoshi Ishikawa
发明人： Tsuyoshi Ishikawa
IPC分类号： C04B35057
CPC分类号： C04B35/62655 , A61K6/0044 , A61K6/033 , A61K6/0643 , A61L27/12 , C04B33/14 , C04B33/30 , C04B33/32 , C04B35/447 , C04B35/6365 , C04B2235/3212 , C04B2235/5436 , C04B2235/6585 , C04B2235/77 , C04B2235/96 , C04B2235/9653
摘要： The method for manufacturing a sintered piece comprises preparing a molded piece of a composite including calcium phosphate compound such as hydroxyapatite, and baking the molded piece in an oxygen atmosphere to obtain the sintered piece. The oxygen concentration of the oxygen atmosphere is controlled to be not less than 25 vol %, and the relative humidity of the oxygen atmosphere is controlled to be below 30% RH. The baking is performed for 30 minutes to 8 hours at a temperature not less than 1000° C. and below a temperature at which thermal decomposition of the calcium phosphate occurs.
摘要翻译：制造烧结体的方法包括制备包括磷酸钙化合物如羟基磷灰石的复合材料的模制件，并在氧气氛中烘烤该模制件以获得烧结块。将氧气氛的氧浓度控制在25体积％以上，将氧气氛的相对湿度控制在30％RH以下。在不低于1000℃的温度下并在低于发生磷酸钙热分解的温度下进行烘烤30分钟至8小时。

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