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    • 9. 发明授权
    • Reducing programming time of a memory cell
    • 减少存储单元的编程时间
    • US08441849B2
    • 2013-05-14
    • US13403454
    • 2012-02-23
    • Tyler J. ThorpRoy E. Scheuerlein
    • Tyler J. ThorpRoy E. Scheuerlein
    • G11C7/06G11C11/00
    • G11C7/12G11C7/065G11C8/08G11C13/0004G11C13/0023G11C13/0061G11C13/0069
    • The present invention provides methods and apparatus for adjusting voltages of bit and word lines to program a two terminal memory cell. The invention may include setting a first line connected to a memory cell to a first voltage from a first line standby voltage, charging a second line connected to the memory cell to a predetermined voltage from a second line standby voltage, and switching the first line from the first voltage to a second voltage. The voltage difference between the first voltage and the predetermined voltage is such that a safe voltage results that does not program the memory cell. A voltage difference between the second voltage and the predetermined voltage is such that a programming voltage operative to program the memory cell results.
    • 本发明提供了调节位和字线的电压以编程两个终端存储单元的方法和装置。 本发明可以包括将连接到存储器单元的第一线路从第一线路待机电压设置为第一电压,将连接到存储器单元的第二线路从第二线路待机电压充电到预定电压,以及将第一线路从 第一电压到第二电压。 第一电压和预定电压之间的电压差使得不对存储单元进行编程的安全电压。 第二电压和预定电压之间的电压差使得可操作以编程存储器单元的编程电压结果。