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    • 10. 发明申请
    • METHOD OF PLASMA ETCHING WITH PATTERN MASK
    • 等离子体蚀刻与图案掩模的方法
    • US20080268647A1
    • 2008-10-30
    • US12134249
    • 2008-06-06
    • Wen-Kun YangJui-Hsien ChangWen-Bin Sun
    • Wen-Kun YangJui-Hsien ChangWen-Bin Sun
    • H01L21/302
    • H01L21/321H01L21/31144
    • The present invention provides a method of plasma etching with pattern mask. There are two different devices in the two section of a wafer, comprising silicon and Gallium Arsenide (GaAs). The Silicon section is for general semiconductor. And the GaAs section is for RF device. The material of pad in the silicon is usually metal, and metal oxide is usually formed on the pads. The metal oxide is unwanted for further process; therefore it should be removed by plasma etching process. A film is attached to the surface of the substrate exposing the area need for etching. Then a mask is attached and aligned onto the film therefore exposing the area need for etching. Then plasma dry etching is applied on the substrate for removing the metal oxide.
    • 本发明提供了一种使用图案掩模进行等离子体蚀刻的方法。 在晶片的两个部分中有两种不同的器件,包括硅和砷化镓(GaAs)。 硅部分用于一般半导体。 而GaAs部分用于RF器件。 硅中的焊盘材料通常是金属,金属氧化物通常形成在焊盘上。 金属氧化物对于进一步的处理是不需要的; 因此应该通过等离子体蚀刻工艺去除。 将膜附着到衬底的表面,暴露出需要蚀刻的区域。 然后将掩模附着并对准到膜上,从而暴露该区域对蚀刻的需要。 然后在衬底上施加等离子体干蚀刻以去除金属氧化物。