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1. 发明授权

US5153693A Circuit including bistable, bipolar transistor 失效
标题翻译：电路包括双稳态双极晶体管
公开(公告)号：US5153693A
公开(公告)日：1992-10-06
申请号：US559530
申请日：1990-07-19
申请人： Won-Tien Tsang , Ming-Chiang Wu
发明人： Won-Tien Tsang , Ming-Chiang Wu
IPC分类号： H01L29/737
CPC分类号： B82Y10/00 , H01L29/7376
摘要： A bipolar transistor which is inherently bistable, is disclosed. This bipolar transistor has a structure such that the corresponding band diagram includes a first potential barrier within the collector, at or adjacent the base-collector interface. In addition, the band diagram also includes at least a second potential barrier within the collector.
摘要翻译：公开了一种固有双稳态的双极晶体管。该双极晶体管具有这样的结构，使得相应的带图包括收集器内的第一势垒，位于或邻近基极 - 集电极界面。此外，带图还包括收集器内的至少第二势垒。

2. 发明授权

US4785454A Stabilized cleaved-coupled cavity laser 失效
标题翻译：稳定的切割耦合腔激光器
公开(公告)号：US4785454A
公开(公告)日：1988-11-15
申请号：US494275
申请日：1983-05-13
申请人： Nils A. Olsson , Won-Tien Tsang
发明人： Nils A. Olsson , Won-Tien Tsang
IPC分类号： H01S3/082 , H01S5/026 , H01S5/10 , H01S5/14 , H01S5/40 , H01S3/10
CPC分类号： H01S5/14 , H01S3/0826 , H01S5/1021 , H01S5/026 , H01S5/4025
摘要： A light transmitter comprising a cleaved-coupled cavity laser and stabilization means to maintain the laser in single longitudinal mode operation is described. '
摘要翻译：描述了一种包括切割耦合的腔体激光器和将激光器维持在单一纵向模式操作中的稳定装置的光发射器。

3. 发明授权

US4780748A Field-effect transistor having a delta-doped ohmic contact 失效
标题翻译：具有δ掺杂欧姆接触的场效应晶体管
公开(公告)号：US4780748A
公开(公告)日：1988-10-25
申请号：US871249
申请日：1986-06-06
申请人： John E. Cunningham , Erdmann F. Schubert , Won-Tien Tsang
发明人： John E. Cunningham , Erdmann F. Schubert , Won-Tien Tsang
IPC分类号： H01L29/43 , H01L21/203 , H01L21/28 , H01L21/338 , H01L29/08 , H01L29/45 , H01L29/778 , H01L29/812 , H01L27/12 , H01L23/48 , H01L29/80
CPC分类号： H01L29/452 , H01L21/02395 , H01L21/0245 , H01L21/02463 , H01L21/02499 , H01L21/02507 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L29/0891
摘要： A field-effect transistor is created on a GaAs semi-insulating substrate using molecular beam epitaxy by fabricating a delta-doped monolayer with a silicon dopant between two undoped GaAs layers grown over the semi-insulating substrate. A plurality of delta-doped monolayers are grown over the surface of the upper undoped layer interleaved with layers of GaAs having a thickness equal to or less than the tunneling width of electrons in GaAs. A channel is etched through the plurality of delta-doped monolayers to permit a gate electrode to contact the upper undoped GaAs layer. Source and drain electrodes are deposited over the delta-doped monolayers on each side of the channel.

4. 发明授权

US4734380A Multicavity optical device held together by metallic film 失效
标题翻译：多腔光学器件由金属膜保持在一起
公开(公告)号：US4734380A
公开(公告)日：1988-03-29
申请号：US866941
申请日：1986-05-27
申请人： Won-Tien Tsang
发明人： Won-Tien Tsang
IPC分类号： H01S3/082 , H01S5/026 , H01S5/10 , H01S5/14 , H01S5/40 , H01L21/304
CPC分类号： H01S3/0826 , H01S5/1021 , H01S5/14 , H01S5/026 , H01S5/4025
摘要： Semiconductor lasers having cleaved optically coupled cavities operating electrically isolated produce output of a single longitudinal mode. Wavelength tuning of the single longitudinal mode is possible.
摘要翻译：具有电隔离工作的切割的光学耦合腔的半导体激光器产生单个纵向模式的输出。单一纵向模式的波长调谐是可能的。

5. 发明授权

US4622093A Method of selective area epitaxial growth using ion beams 失效
标题翻译：使用离子束的选择性区域外延生长方法
公开(公告)号：US4622093A
公开(公告)日：1986-11-11
申请号：US817785
申请日：1986-01-08
申请人： Won-Tien Tsang
发明人： Won-Tien Tsang
IPC分类号： C30B23/04 , C30B23/08 , G02B6/12 , H01L29/12 , H01L29/775 , C30B25/04
CPC分类号： B82Y10/00 , C30B23/04 , C30B23/08 , H01L29/125 , H01L29/775 , G02B2006/12178
摘要： A method of selective area epitaxial growth using a scanning ion beam is described.
摘要翻译：描述了使用扫描离子束的选择性区域外延生长的方法。

6. 发明授权

US4291327A MOS Devices 失效
标题翻译： MOS器件
公开(公告)号：US4291327A
公开(公告)日：1981-09-22
申请号：US114683
申请日：1980-01-23
申请人： Won-Tien Tsang
发明人： Won-Tien Tsang
IPC分类号： H01L21/28 , H01L21/316 , H01L29/34
CPC分类号： H01L21/02178 , H01L21/02241 , H01L21/02255 , H01L21/28264 , H01L21/31666 , H01L21/31683
摘要： An oxide layer (16') is formed on a GaAs body (14) by epitaxially growing a layer (12) of Al.sub.x Ga.sub.1-x As layer on a major surface (18) of the body and then thermally oxidizing the Al.sub.x Ga.sub.1-x As layer for a time period effective to convert it to an oxide. The oxidizing process is essentially self-terminating at the major surface 18. The application of this process to the fabrication of MOS capacitors and IGFETs is described.
摘要翻译：通过在主体的主表面（18）上外延生长Al x Ga 1-x As层的层（12），然后将Al x Ga 1-x As层热氧化，从而在GaAs体（14）上形成氧化物层（16'）有效地将其转化为氧化物的时间段。氧化过程在主表面18基本上自终止。描述了将该方法应用于MOS电容器和IGFET的制造。

7. 发明授权

US4194933A Method for fabricating junction lasers having lateral current confinement 失效
标题翻译：具有横向电流限制的结型激光器的制造方法
公开(公告)号：US4194933A
公开(公告)日：1980-03-25
申请号：US39862
申请日：1979-05-17
申请人： Ralph A. Logan , Won-Tien Tsang
发明人： Ralph A. Logan , Won-Tien Tsang
IPC分类号： H01L21/208 , H01L21/306 , H01L33/04 , H01S5/22 , H01S5/223
CPC分类号： H01S5/223 , H01L21/02395 , H01L21/02546 , H01L21/02625 , H01L21/02628 , H01L21/30612 , H01L33/04 , H01S5/2205 , H01S5/2231 , H01S5/2235
摘要： Described is a method for fabricating a stripe geometry double heterostructure (DH) junction laser in which lateral current confinement is acheived by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for example, and a layer of p-AlGaAs is then grown by LPE so that nucleation does not occur on the top of the mesa. Laterally spaced zones of p-AlGaAs are thus formed on either side of the mesa. An n-p-p or n-n-p DH is then grown so that the interface between the p-AlGaAs layers and the first n-layer of the DH forms a pair of laterally spaced p-n junctions separated by the mesa. When the light-emitting p-n junction in the DH active region is forward biased, the air of spaced junctions are reverse biased so that pumping current is constrained to flow through the active region in a narrow channel to the mesa. Further lateral current confinement is achieved by forming on the upper DH surface a second air of reverse biased p-n junctions separated by a window in alignment with the mesa.
摘要翻译：描述了一种用于制造条纹几何形状双异质结（DH）结激光器的方法，其中横向间隔的，反向偏置的p-n结对被横向电流限制所吸收。例如，在n-GaAs衬底上形成台面，然后通过LPE生长p-AlGaAs层，使得在台面的顶部不发生成核。因此，在台面的任一侧上形成间隔开的p-AlGaAs区域。然后生长n-p-p或n-n-p DH，使得p-AlGaAs层和DH的第一n层之间的界面形成由台面分开的一对横向间隔开的p-n结。当DH有源区域中的发光p-n结正向偏置时，间隔的结的空气被反向偏置，使得泵浦电流被限制在窄通道中的有源区域流到台面。通过在上DH表面上形成由与台面对准的窗口隔开的反向偏置p-n结的第二空气来实现进一步的横向电流限制。

8. 发明授权

US5606573A Method and apparatus for control of lasing wavelength in distributed feedback lasers 失效
标题翻译：用于控制分布反馈激光器中激光波长的方法和装置
公开(公告)号：US5606573A
公开(公告)日：1997-02-25
申请号：US608984
申请日：1996-02-29
申请人： Won-Tien Tsang
发明人： Won-Tien Tsang
IPC分类号： H01S3/1055 , H01S5/00 , H01S5/026 , H01S5/06 , H01S5/12 , H01S5/40 , H01S3/08 , G02B6/12 , H01L21/20 , H04J14/02
CPC分类号： H01S5/12 , H01S5/026 , H01S5/1206 , H01S5/1212 , H01S5/1215 , H01S5/1228 , H01S5/1243 , H01S5/4025 , H01S5/4056 , H01S5/4087
摘要： A method and apparatus for control of lasing wavelength in distributed feedback lasers using an improved waveguide. The waveguide comprises a periodic structure or grating and an active stripe which is oriented at a nonzero angle .THETA. with respect to a line perpendicular to the lines of the grating. Incremental changes in the operating wavelength of a plurality of lasers can be achieved by forming the active stripe of each waveguide of each laser at a different angle .THETA.. This method and apparatus provides a fine degree of control over the operating wavelength of distributed feedback lasers and is particularly useful in high capacity optical communications networks.
摘要翻译：使用改进波导控制分布反馈激光器中的激光波长的方法和装置。波导包括周期性结构或光栅以及相对于垂直于光栅线的线以非零角度THETA取向的有源条纹。可以通过以不同的角度THETA形成每个激光器的每个波导的有源条来实现多个激光器的工作波长的增量变化。该方法和装置对分布式反馈激光器的工作波长提供了很好的控制，并且在高容量光通信网络中特别有用。

9. 发明授权

US5346581A Method of making a compound semiconductor device 失效
标题翻译：制备化合物半导体器件的方法
公开(公告)号：US5346581A
公开(公告)日：1994-09-13
申请号：US42385
申请日：1993-04-01
申请人： Won-Tien Tsang
发明人： Won-Tien Tsang
IPC分类号： H01L21/28 , H01L21/203 , H01L21/302 , H01L21/306 , H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , C30B25/20 , C30B25/04
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/30621 , Y10S438/913 , Y10S438/944
摘要： In a preferred embodiment, the disclosed method of making a compound semiconductor (e.g., InP, GaAs) device comprises etching of a semiconductor body by exposure of the body to a chemical beam or beams that comprise an etching medium (e.g., PCl.sub.3, AsCl.sub.3) and a precursor chemical (e.g., trimethylindium, trimethylgallium), followed by chemical beam epitaxy (CBE) growth of semiconductor material on the etched surface without exposure of the semiconductor body to the ambient atmosphere. Presence of the precursor chemical in the etching beam can result in significantly improved surface morphology, with attendant high quality re-growth. Multiple etching/growth sequences are facilitated by the almost instantaneous (e.g., about 1s) switching between the etching and growth modes that is possible in a reactor according to the invention.
摘要翻译：在优选实施例中，所公开的制备化合物半导体（例如，InP，GaAs）器件的方法包括通过将本体暴露于化学束或包含蚀刻介质（例如，PCl3，AsCl3）的光束来蚀刻半导体主体，和前体化学品（例如，三甲基铟，三甲基镓），然后在蚀刻表面上化学束外延（CBE）生长半导体材料，而不将半导体主体暴露于环境大气。蚀刻光束中前体化学物质的存在可以显着改善表面形态，伴随着高质量的再生长。通过在根据本发明的反应器中可能的蚀刻和生长模式之间几乎瞬时（例如，约1s）的切换来促进多个蚀刻/生长序列。

10. 发明授权

US4737960A Rare earth doped semiconductor laser 失效
标题翻译：稀土掺杂半导体激光器
公开(公告)号：US4737960A
公开(公告)日：1988-04-12
申请号：US911976
申请日：1986-09-26
申请人： Won-Tien Tsang
发明人： Won-Tien Tsang
IPC分类号： H01S5/00 , H01S3/16 , H01S5/22 , H01S5/30 , H01S3/19
CPC分类号： H01S5/22 , H01S5/30 , H01S5/305 , H01S3/1608 , H01S3/1628 , H01S5/3068 , Y10S372/704
摘要： A solid state laser is disclosed wherein a semiconductor active layer is arranged in a Fabry-Perot cavity and the active layer is doped with a rare earth ion having a dominant emission wavelength. The proportion of elements for the compound active layer is chosen such that the bandgap corresponds to a wavelength which is longer than the emission wavelength of the rare earth ion. In the specific embodiment disclosed, the quarternary semiconductor compound is gallium indium arsenide phosphide and the rare earth ion is erbium.
摘要翻译：公开了一种固态激光器，其中半导体有源层布置在法布里 - 珀罗腔中，并且有源层掺杂有具有主要发射波长的稀土离子。选择化合物活性层的元素的比例使得带隙对应于比稀土离子的发射波长长的波长。在所公开的具体实施方案中，第四半导体化合物是砷化镓铟磷化物，稀土离子是铒。

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